Untitled
Abstract: No abstract text available
Text: THIS DRAWING IS A CONTROLLED DOCUMENT. LOC REVISIONS DIST HJ - P LTR DESCRIPTION B3 B4 B5 C DWN DATE Printing New HF3 46E ECR-12-003906, New HF3 43I S REVISED PER ECO-13-009645 HD BK AK AK UKo UKo UKo UKo 09JUL2010 12JAN2012 29FEB2012 18JUN2013 APVD Mark 1)
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ECR-12-003906,
ECO-13-009645
09JUL2010
12JAN2012
29FEB2012
18JUN2013
04APR2007
04APR2007
COPYRIGHT2007
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Untitled
Abstract: No abstract text available
Text: THIS DRAWING IS A CONTROLLED DOCUMENT. LOC REVISIONS DIST HJ - P LTR B1 B2 B3 C DESCRIPTION DWN DATE New HF3 51S, HF3 56S, HF3 91S Printing , new HF3 53RS New HF3 91R, HF3 93R, HF3 96R REVISED PER ECO-13-009645 HD HD BK AK UKo UKo UKo UKo 06APR2010 09JUL2010
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ECO-13-009645
06APR2010
09JUL2010
12JAN2012
18JUN2013
COPYRIGHT2007
04APR2007
04APR2007
7168-m
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Untitled
Abstract: No abstract text available
Text: RF Signal Relays AXICOM HF3 Relay n Y-Design n Frequency range DC to 3GHz n Impedance 50Ω or 75Ω n Small dimensions 14.6x7.2x10mm n 1 form C contact (1 changeover contact) n Immersion cleanable n Low power consumption (≤140mW) Typical applications Cable modems and linecards/ CATV, Tabs, measurement and test
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2x10mm)
140mW)
12VDC
24VDC
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Untitled
Abstract: No abstract text available
Text: SM1060DS1 VOLTAGE 60 V 10Amp. Schottky Barrier Rectifiers Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free TO-252 D-PACK FEATURES z z z z z Low forward voltage drop High current capability High reliability
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SM1060DS1
10Amp.
O-252
UL94V-0
MIL-STD-202
09-Jul-2010
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Untitled
Abstract: No abstract text available
Text: THIS DRAWING IS A CONTROLLED DOCUMENT. REVISIONS DIST HJ - P LTR DESCRIPTION E F F1 F2 New Coplanarity, Solder Pad Layout Printing REVISED PER ECO-11-005150 REVISED PER ECO-11-017072 ECR-13-009645 14JUN2013 A 0.9+0.3 3 3 2006 4° 4° 4.9 Coplanarity<=0.10mm
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ECO-11-005150
ECO-11-017072
ECR-13-009645)
14JUN2013
25MAR2011
COPYRIGHT2006
26JAN2007
15JAN2010
09JUL2010
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520100204
Abstract: No abstract text available
Text: 2N2222AHR Hi-Rel 40 V, 0.8 A NPN transistor Datasheet - production data Features Parameter ESCC JANS BVCEO min 40 V 50 V 1 2 3 TO-18 3 IC max 0.8 A hFE at 10 V - 150 mA 100 3 4 1 1 2 • Hermetic packages 2 LCC-3 UB • ESCC and JANS qualified Pin 4 in LCC-3UB is connected to the metallic lid.
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2N2222AHR
2N2222AHR
MIL-PRF19500
DocID16558
520100204
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tda7851
Abstract: TDA7851A TDA-7851 AC00024 TDA785 4X72 D05AU1613 Complementary Audio Power Amplifier Flexiwatt AC00034
Text: TDA7851A 4 x 45 W MOSFET quad bridge power amplifier Features • Multipower BCD technology ■ High output power capability: – 4 x 45 W/4 Ω Max. – 4 x 28 W/4 Ω @ 14.4 V, 1 kHz, 10 % – 4 x 72 W/2 Ω Max. ■ MOSFET output power stage ■ Excellent 2 Ω driving capability
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TDA7851A
TDA7851A
tda7851
TDA-7851
AC00024
TDA785
4X72
D05AU1613
Complementary Audio Power Amplifier
Flexiwatt
AC00034
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FERRITE lcc
Abstract: SOC2484
Text: 2N2484HR Hi-Rel NPN bipolar transistor 60 V, 50 mA Datasheet - production data Features 1 Parameter Value BVCEO 60 V IC max 50 mA hFE at 10 V - 150 mA > 250 Operating temperature range - 65 °C to + 200 °C 2 3 TO-18 3 3 4 1 1 2 2 • Linear gain characteristics
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2N2484HR
2N2484HR
DocID17734
FERRITE lcc
SOC2484
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Untitled
Abstract: No abstract text available
Text: SMAJ Transil Features • Peak pulse power: – 400 W 10/1000 µs – 2.3 kW (8/20 s) A ■ Stand off voltage range: from 5 V to 188 V ■ Unidirectional and bidirectional types K ■ Low leakage current: – 0.2 A at 25 °C – 1 A at 85 °C Unidirectional
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DO-214AC)
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J2N2222
Abstract: 520100204
Text: 2N2222AHR Hi-Rel 40 V - 0.8 A NPN transistor Datasheet — production data Features Parameter BVCEO min ESCC 1 JANS 40 V 2 3 50 V IC max 0.8 A hFE at 10 V - 150 mA 100 TO-18 3 3 4 1 1 2 2 • Linear gain characteristics ■ Hermetic packages ■ ESCC and JANS qualified
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2N2222AHR
2N2222AHR
MIL-PRF19500
J2N2222
520100204
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520100204
Abstract: 2N2222A* LCC SOC2222ASW
Text: 2N2222AHR Hi-Rel 40 V - 0.8 A NPN bipolar transistor Features Parameter Value BVCEO 40 V IC max 0.8 A hFE at 10 V - 150 mA > 100 Operating temperature range - 65 °C to + 200 °C 1 2 3 TO-18 3 3 4 1 1 2 • Linear gain characteristics ■ Hermetic packages
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2N2222AHR
2N2222AHR
520100204
2N2222A* LCC
SOC2222ASW
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SM1150B
Abstract: No abstract text available
Text: SM1150B VOLTAGE 150 V 1.0 A Schottky Barrier Rectifiers Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES High Current Capability Extremely Low Thermal Resistance For Surface Mount Application
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SM1150B
DO-214AA)
MIL-STD-202
09-Jul-2010
SM1150B
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Untitled
Abstract: No abstract text available
Text: 2N2222AHR Hi-Rel 40 V - 0.8 A NPN transistor Datasheet — production data Features Parameter BVCEO min ESCC 1 JANS 40 V 2 3 50 V IC max 0.8 A hFE at 10 V - 150 mA 100 TO-18 3 3 4 1 1 2 2 • Linear gain characteristics ■ Hermetic packages ■ ESCC and JANS qualified
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2N2222AHR
2N2222AHR
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Untitled
Abstract: No abstract text available
Text: TDA7851F 4 x 48 W MOSFET quad bridge power amplifier Datasheet − production data Features • Multipower BCD technology ■ High output power capability: – 4 x 48 W/4 Ω max. – 4 x 28 W/4 Ω @ 14.4 V, 1 kHz, 10 % – 4 x 72 W/2 Ω max. ■ MOSFET output power stage
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TDA7851F
Flexiwatt25
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SOC2222ASW
Abstract: SOC2222A 2N2222AUB1 5201-002-05 ESCC 5201-002 SOC2222A smd smd marking codes list 2N2222AUB add 5201 520100204
Text: 2N2222AHR Hi-Rel NPN bipolar transistor 40 V - 0.8 A Features BVCEO 40 V IC max 0.8 A hFE at 10 V - 150 mA > 100 Operating temperature range - 65 °C to + 200 °C 1 2 3 TO-18 3 3 4 • Linear gain characteristics 1 1 2 ■ Hermetic packages ■ ESCC qualified
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2N2222AHR
2N2222AHR
SOC2222ASW
SOC2222A
2N2222AUB1
5201-002-05
ESCC 5201-002
SOC2222A smd
smd marking codes list
2N2222AUB
add 5201
520100204
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FLEXIWATT25
Abstract: tda785 TDA7850LVH SMD L5 TDA7850LV
Text: TDA7850LV 4 x 50 W quad bridge amplifier suitable for low voltage car radio systems Data brief Features • High output power capability: – 4 x 50 W/4 Ω max. – 4 x 30 W/4 Ω @ 14.4 V, 1 kHz, 10 % – 4 x 80 W/2 Ω max. – 4 x 53 W/2 Ω @ 14.4V, 1 kHz, 10 %
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TDA7850LV
Flexiwatt25
FLEXIWATT25
tda785
TDA7850LVH
SMD L5
TDA7850LV
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TDA7851A
Abstract: No abstract text available
Text: TDA7851A 4 x 48 W MOSFET quad bridge power amplifier Datasheet production data Features • Multipower BCD technology ■ High output power capability: – 4 x 48 W/4 Max. – 4 x 28 W/4 @ 14.4 V, 1 kHz, 10 % – 4 x 72 W/2 Max. ■ MOSFET output power stage
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TDA7851A
TDA7851A
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TDA7851F
Abstract: No abstract text available
Text: TDA7851F 4 x 48 W MOSFET quad bridge power amplifier Datasheet production data Features • Multipower BCD technology ■ High output power capability: – 4 x 48 W/4 max. – 4 x 28 W/4 @ 14.4 V, 1 kHz, 10 % – 4 x 72 W/2 max. ■ MOSFET output power stage
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TDA7851F
Flexiwatt25
TDA7851F
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SOC2222AHR
Abstract: No abstract text available
Text: 2N2222AHR Hi-Rel 40 V, 0.8 A NPN transistor Datasheet - production data Features Parameter ESCC JANS BVCEO min 40 V 50 V 1 2 3 IC max 0.8 A hFE at 10 V - 150 mA 100 TO-18 3 3 4 1 1 2 • Hermetic packages 2 LCC-3 UB • ESCC and JANS qualified Pin 4 in UB is connected to the metallic lid.
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PDF
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2N2222AHR
2N2222AHR
MIL-PRF19500
DocID16558
SOC2222AHR
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Untitled
Abstract: No abstract text available
Text: 2N2484HR Hi-Rel NPN bipolar transistor 60 V, 50 mA Datasheet - production data Features 1 Parameter Value BVCEO 60 V IC max 50 mA hFE at 10 V - 150 mA > 250 Operating temperature range - 65 °C to + 200 °C 2 3 TO-18 3 3 4 1 1 2 2 • Linear gain characteristics
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2N2484HR
2N2484HR
DocID17734
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Untitled
Abstract: No abstract text available
Text: THIS DRAWING IS A CONTROLLED DOCUMENT. REVISIONS DIST HJ - P LTR DESCRIPTION E F F1 F2 New Coplanarity, Solder Pad Layout Printing REVISED PER ECO-11-005150 REVISED PER ECO-13-009645 18JUN2013 3 4° 0.9+0.3 A 2006 4° 3 4.9 Coplanarity<=0.10mm 6.7 16+0.5 -0.5
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ECO-11-005150
ECO-13-009645
18JUN2013
25MAR2011
COPYRIGHT2006
15JAN2010
09JUL2010
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Untitled
Abstract: No abstract text available
Text: RF Signal Relays AXICOM Telecom-, Signal and RF Relays Sep. 07, Rev. B HF6 HF6 Relay Relay Terminal assignment n Y-Design Relay top viewDC n Frequency range n Impedance to 6GHz 50Ω n Small dimensionstype, 16x7.6x10mm Non-latching n 1 form C contact (1condition
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6x10mm)
140mW)
Rat50ohm
12VDC
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SOC2222A
Abstract: 520100204 15mAIB 520100205R SOC2222ARHRT JANS2N2222AUB 2N2222A marking code 2N2222A* LCC SOC2222ARHRG 2N2222A st marking
Text: 2N2222AHR Hi-Rel 40 V, 0.8 A NPN transistor Datasheet - production data Features Parameter ESCC JANS BVCEO min 40 V 50 V 1 2 3 IC max 0.8 A hFE at 10 V - 150 mA 100 TO-18 3 3 4 1 1 2 • Hermetic packages 2 LCC-3 LCC-3UB • ESCC and JANS qualified Pin 4 in LCC-3UB is connected to the metallic lid.
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2N2222AHR
2N2222AHR
MIL-PRF19500
DocID16558
SOC2222A
520100204
15mAIB
520100205R
SOC2222ARHRT
JANS2N2222AUB
2N2222A marking code
2N2222A* LCC
SOC2222ARHRG
2N2222A st marking
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AXICOM Relay
Abstract: 9121
Text: T H IS IT A C O N T R O L L E D D O C UM E N T FOR T Y C O E L E C T R O N I C S C O R P O R A T I O N T O C H A N G E A ND T H E C O N T R O L L I N G E N G I N E E R I N G O R G A N I Z A T I O N S H O U L D BE C O N T A C T E D F OR T H E L A T E S T R E V I S I O N .
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OCR Scan
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PDF
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21JUL2009
23SEP2009
15JAN2010
09JUL2010
06Nov2006
CH-8804
30JUL2007
AXICOM Relay
9121
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