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    BUK455-600B

    Abstract: LG 631
    Text: PHILIPS bSE J> INTERNATIONAL m 711Gfl2b 0Db4101 Philips Semiconductors PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies SMPS , motor control, welding,


    OCR Scan     		PDF 711Gfl2b 0Db4101 BUK455-600B PINNING-T0220AB BUK455-600B LG 631

    BUK455-600B

    Abstract: transistor buk455 Philips 34D
    Text: PHILIPS INTERN ATI ONAL bSE D m 711GÛ2b 0Db4101 7T5 « P H I N Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in


    OCR Scan     		PDF 0Db4101 BUK455-600B -T0220AB 711Dfl2b BUK455-600B transistor buk455 Philips 34D