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    BUK555-60A

    Abstract: BUK555-60B T0220AB
    Text: PHILIPS INT ER NA TI O N AL bSE D • TllQAEb 0DbM241 Philips Semiconductors PowerMOS transistor Logic level FET GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope. The device is Intended for use in


    OCR Scan     		0DbM241 BUK555-60A/B T0220AB BUK555 -ID/100 BUK555-60A BUK555-60B PDF