Untitled
Abstract: No abstract text available
Text: EUPEC blE D • 3 40 32 e!? 0G011b3 5S1 H U P E C TT 60 F, TD 60 F, DT 60 F Elektrische Eigenschaften Electrical properties Höchstzulässige Werte Maximum rated values Periodische Vorwärts- und Rückwärts-Spitzensperrspannung repetitive peak forward off-state
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0G011b3
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KA 2261
Abstract: No abstract text available
Text: S-M 0 S SYSTEMS INC SbE D • 7^32^0^ 0G01b25 225 H S N O SED1681F 7 ^ r ^ - /J - o 7 CMOS LCD DRIVER • 80 LCD Segment Driver Outputs • Display Duty Cycles Ranging From 1/8 to 1/32 • Expansion Driver The SED1681 is a dot-matrix LCD segment driver for small, high-contrast display panels with duty cycles ranging
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0G01b25
SED1681F
SED1681
SED1278F,
SED1181F.
SED1681Doa)
100-pin
SED1681Foa)
KA 2261
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oms 450
Abstract: 606C
Text: 4bflfc>22b 0G01b3fl 30 ^ • IXY □IXYS DSEI 60 Fast Recovery Epitaxial Diode ^FAV t v ' km VRR* Type > ■ 800 1000 DSEI60-08A DSEI 60-10 A i \ * • H - 0 Maximum ratings Sym bol Test conditions 'm e TVJ = T vjm Tc = 606C; rectangular, 6 - 0.5 tp < 10 jis; rep. rating, puise width limited by TVJU
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4bflb22b
0-08A
O-247
60Aragf
oms 450
606C
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Untitled
Abstract: No abstract text available
Text: 2bE D LOGIC DEVICES INC • SSbSTQS 0G0127S 3 ■ T -9 B -Û 7 12-bit Cascadable Multiplier-Accumulator MM • LMS12 DESCRIPTION The LMS12 is a high speed 12 x 12-bit of the dock in the 12-bit A and B input combinatorial multiplier integrated register, respectively. These registers
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0G0127S
12-bit
LMS12
LMS12
26-bit
84-pin
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CI983
Abstract: 1S53 P33PCT374A P33PCT374B PCT374 1374B
Text: PERFORMANCE SEMICO NDUCTOR 20E & P33PCT374A/B OCTAL D FLIP-FLOPS WITH 3-STATE OUTPUTS Wt 70bSS*ì7 0G0127A 1 • ADVAMCE IMreSäMATOSM T ~ n - o ? - n xh FEATURES 3.3V + 0.2V Power Supply Center Power and Ground Pins 250 MHz Typical Toggle Rate Function, Speed and Drive Compatible with the
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70L2ST7
P33PCT374A/B
J374A
1374B
CI983
1S53
P33PCT374A
P33PCT374B
PCT374
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Untitled
Abstract: No abstract text available
Text: INDUSTRIAL DEVICES I NC bôE D 474133B 0G01E40 SUPER BRITE 5X5mm SQUARE OUTLINE DIMENSIONS .20 ± .007 sq. 5.0 ±0.2 • Square surface for modern appearance • Bright, even illumination • Can be side-stacked • Tinted diffused lens / ALL DIMENSIONS ARE IN INCHES (MM).
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474133B
0G01E40
4385B
4385B1
4385B3
4385B5
4385B7
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Untitled
Abstract: No abstract text available
Text: ÛUALITY SEMICONDUCTOR INC bSE J> • 74bfc.ñG3 0G013Ô3 bbD « Ú S I QS3251 Advanced Information High-Speed CMOS QuickSwitch 8:1 Mux / Demux Ô FEATURES/BENEFITS • • • • 5 0 switches connect inputs to outputs Pin compatible to the 74F251, 74FCT251, and
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74bfc.
0G013
QS3251
74F251,
74FCT251,
74FCT251T
16-pin
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1.2 volt RS-343
Abstract: HDAC97000 330 ohm resistor ALI 3101 C 6ca DIODE
Text: .SIGNAL PROCESSING 2SE D • SIGNAL PROCESSING TECHNOLOGIES 0 2 ^ 1 7 0G013b7 3 HDAC97000 8-BIT, HIGH SPEED RASTER D/A CONVERTER FEATURES: APPLICATIONS: • 125 M W PS Conversion Rate • PIn-Compatlble with AD9700 with Improved Performance • Color or Monochrome Displays
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QaQ13b7
HDAC97000
AD9700
RS-343-A
1.2 volt RS-343
330 ohm resistor
ALI 3101 C
6ca DIODE
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Untitled
Abstract: No abstract text available
Text: n/A-CON SEMICONDnBRLNGTON 11 D S b l4 2 S m 0G0134Û b • MIC / - O 7 ^ -6 7 /M W Zero Bias Detector Diodes Features ■ CAN BE USED WITHOUT EXTERNAL DC BIAS ■ EXHIBIT UNIFORM Rv CHARACTERISTICS ■ HIGH VOLTAGE SENSITIVITY ■ AVAILABLE IN PACKAGES, CHIPS
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0G0134Û
5b4EE14
DQG13S4
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J 24C02 SI
Abstract: L24C02 do ic 24C02 free
Text: ROHM C O R P / E X E L EXEL m MELECS ~ bbE • 702^014 0G01572 RQ7 _ XL24C02 Advance Information 2,048-Bit Serial Electrically Erasable PROM 3 Volt and 5 Volt Operation FEA TU R ES ■ D PIN CONFIGURATIONS Low Power CMOS — Active current le ss than 1mA
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0G01572
XL24C02
048-Bit
J 24C02 SI
L24C02
do ic 24C02 free
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20302
Abstract: EB 203 D 0G013M3
Text: 8 368602 SOLITRON DEVICES SOLITRON DEVICES INC D 61C 01343 INC t.1 SDM SDM SDM SDM 5 AMP FAST SWITCHING T-33-29 B E § a3tat,G2 0G013M3 4 M~~ miTiNpypsvicES SEMICONDUCTOR GROUP L>] r 20301 20302 20303 20304 N PN DARLBNGTON POWER TRANSISTORS Û % ñ p'.ä &
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T-33-29
0G013M3
20VIB1
DD0134S
20302
EB 203 D
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FF100R10KN
Abstract: Eupec fz 1200 r 12 fz 300 r 12 kf2 eupec module igbt FZ200
Text: EUPEC IGBT m odules b lE 34032^7 0G01345 3Efl D IUPEC Normal modules Type VcES IcRM lc A Outline tv] = 25 ”C, typ. t«i = 25 °C, typ. tyj = 25 °C, typ. tv¡ A V US US us °C/W °c 150 59 25 °C, typ. 0,5 0,3 25 50 3 0,4 0,6 0,3 0,5 150 59 50 100 3 0,45
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Untitled
Abstract: No abstract text available
Text: PUR] Y UH J)/ AND; A N » »IV LED Lamps 3flE D B 743275=] 0G01Ô33 T QAND STRIKING BRIGHT _ FEA TU R ES • • • • • • • Striking Bright High brightness for outdoor applications Low drive current Solid state reliability, long life
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AND185,
mm/10
AND190GCP
AND191GCP
7M327ST
AND180QRP/AND180PGP
AND135NR/AND135NGP
AND134MR
AND114KR
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PDF
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IC PRICE LIST
Abstract: QQQ1053 343AG
Text: F D K AMERICA INC 14E D • 343ÔGÔ4 0G0102E 2 THICK FILM HYBRID ICs T-MZ-S 1. Application 2. Circuit circuit diagram and materials & compo nents list), power consumption, frequency, and other specifications 3. Test conditions 4. Quality assurance conditions (for environmental
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343AGÃ
0G0102E
IC PRICE LIST
QQQ1053
343AG
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ESJA57-04
Abstract: ESJA82-10 ESJA82-12 ESJA82-14 ESJA83-16 ESJA83-18 ESJA83-20 ESJA86-24 ESJA88-06 ESJA88-08
Text: CÔLLMER SEM IC ONDUCTOR INC 25E D 52367TB 0G0133S 5 High Voltage Silicon Rectifiers & High Power Rectifier Assemblies Part Number VRRM lo KV (mA) ; VF (V) Trr (jusec) Pkg. L (in) Pkg. Dia. (in) Wire Dia. (in) .256 .256 .394 .394 .394 .472 .472 .472 .591
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0G0133S
ESJA88-06
ESJA88-08
ESJA82-10
ESJA82-12
ESJA82-14
ESJA83-16
ESJA83-18
ESJA83-20
ESJA86-24
ESJA57-04
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Untitled
Abstract: No abstract text available
Text: SANKEN ELECTRIC CO LTD SSE D 2SG4467 • 7^0741 0G01G04 2fl4 H S A K ü Silicon NPN Triple Diffused Planar ☆Com plem ent to type 2 S A 1 6 9 4 Application Example : • Outline Drawing 2 . M T-100ÍT03P Audio and General Purpose Ta=25°C) Electrical Characteristics
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2SG4467
0G01G04
T-100Ã
2SC4467
10max
120min
MT-25
T0220)
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VTT3323LA
Abstract: VTT3324LA VTT3325LA
Text: SbE D 3G3DbOT .025" NPN Phototransistors 0G01172 14T • VCT VTT3323LA , 4 LA, 5 LA Clear Long T-1 Plastic Package T-41-61 E G & G VACTEC PACKAGE DIMENSIONS inch mm .2 2 < 5.6) .0 6 ( 1 .5 ) .0 2 3 (0 - 5 8 ) .0 1 7 (0 .4 5 ) ■1 6 0 ( 4 .0 6 ) .1 4 0 ( 3 .5 6 )
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0G01172
VTT3323LA,
T-41-61
VTE33xxLA
400fc
VTT3323LA
VTT3324LA
VTT3325LA
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PDF
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32S00
Abstract: JE 33
Text: 3M032R7 blE D EUPEC 0G01252 bfl? • l U P E C DD 105 N Elektrische Eigenschaften Electrical properties M axim um rated values Periodische Spitzensperrspannung repetitive peak reverse voltage tv] = - 40',C . tv| m s* Stoßspitzenspannung non repetitive peak
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0G01S52
32S00
JE 33
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PDF
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manual modem QAM HALF DUPLEX
Abstract: RJ11C 20D5 CH1775 INS8250 V130LA10A Modem basic circuit diagram modem circuit echo S161A
Text: CERMETEK MIC ROELECTRONICS 3ÛE D • 20DSÔ03 0G01105 5 * C E R “ i'"p -7 S -3 CH1775 Modem Module INTRODUCTION FEATURES The Cermetek CH1775 Modem Module offers the design engi neer a quick and easy way of integrating a high performance modem into a product. Integration consists of mounting the
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0G01105
CH1775
RJ-11C
T-7S-33-9Ã
manual modem QAM HALF DUPLEX
RJ11C
20D5
INS8250
V130LA10A
Modem basic circuit diagram
modem circuit echo
S161A
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PDF
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0G015
Abstract: X2816BMB
Text: XICOR INC TS 99 41 74 3 X I C O R 1^1^41743 0G015D0 □ 95D INC T - ¥4 -/3 -27 DATA SHEET SUPPLEMENT Mil-Std-883C 16K 01500 D W i 2048 x 8 Bit X2816BMB Electrically Erasable PROM With the exception of Voe . a11device A.C. and D.C. pa rameters are the same as those for normal operation.
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0G015D0
Mil-Std-883C
X2816BMB
X2816BMB
MilStd-883C
0G015
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PDF
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1n5190
Abstract: No abstract text available
Text: SOLID STATE DEVICES INC 1BE D |ñ3bbDll 0G01fll3 7 | _ T - 0 1 - \ £ ' 1N5186 THRU SPD5192 3 AMP FAST RECOVERY RECTIFIER 1 0 0 -1 0 0 0 VOLTS CASE STYLE 14830 Valley View Avenue La Mirada, California 90638 213 921-9660 TWX 910-583-4807 FAX 213-921-2396
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0G01fll3
1N5186
SPD5192
1N5187
1N5188
1N5190
SPD5191
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PDF
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pj 899 diode
Abstract: pj 899 2sk mosfet DD01 it900
Text: 2 S K 1 5 1 2 MAE 1> • 52307=12 ÜDDlflES ISS C0LH1ER SEMICONDUCTOR INC Scope This specifies Fuji power MOSFET Outline I Construction Q ) Application IS ) Outview “ Ial*i£ > S 3 2 i«i "2O5 3 _j a 3 5 o 0: « ? “ &Ô “ a ORu is e t oi¿ £s § s S
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MK5C25623)
IC0LT-39
T0-228AA
SC-65
MK5C25624
pj 899 diode
pj 899
2sk mosfet
DD01
it900
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PDF
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Untitled
Abstract: No abstract text available
Text: Introduction This manual provides the information needed to configure the PSX Family devices using the JTAG interface. It is intended for users who plan to write their own code to configure the PSX devices. In addition, this manual explains how the boundary scan features implemented in the PSX devices can be used
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PSX160,
PSX128B
PSX96B.
has27
DDD11SG
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PDF
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Untitled
Abstract: No abstract text available
Text: •HYUNDAI SEMICONDUCTOR H Y 5 1 4 4 1 0 A S e r ie s 1M x 4-bit CMOS DRAM with Write-Per-Bit DESCRIPTION The HY514410A is the new generation and fast dynamic RAM organized 1,048,576 x 4-bit with function of Write-Per-Bit. The HY514410A utilizes Hyundai's CMOS silicon gate process technology as well as advanced
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HY514410A
8-10-A
4b750fl
000147b
HY514410AJ
HY514410AU
HY514410AT
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