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    m4512

    Abstract: HYM59256AM
    Text: HYUNDAI 3TE ELECTRONI CS » m 4b750flö Ü0 0 Q3 7 Ô T •HYNK 256KX 9-Bit CMOS DRAM MODULE M451201A-APR9T DESCRIPTION FEATURES The HYM59256A is a 256K words by 9bits dynamic RAM m odule and consists o f Fast Page mode CM OS DRAMs of two HY534256J in 20/26 pin SOJ and one HY53C256LF in 18


    OCR Scan     		PDF 4b750flö 256KX M451201A-APR9T HYM59256A HY534256J HY53C256LF 22\sF HYM59256AM HYM59256AP HYM59256A-70 m4512

    M2312

    Abstract: M231202B-MAY92 hyundai HY62C256
    Text: H Y U N D A I E L E C T R O N I C S S I E » • 4b750flfl □ □ □ 1 1 3 ci 3 7 4 ■ H Y N K HY62C256 •Hyundai SEMICONDUCTOR 32KX8-Bit CM O S SRAM M 231202B -M A Y 92 T 4 t> -Z V \3 DESCRIPTION FEATURES The HY62C256 is a high speed low power, 32,768 words by 8-bit CMOS static RAM fabri­


    OCR Scan     		PDF HY62C256 4b750flfl 113ci 32KX8-Bit M231202B-MAY92 PACKAGE-600Ã M2312 hyundai HY62C256

    Untitled

    Abstract: No abstract text available
    Text: HY UND AI E L E C T R O N I C S SIE D 4b750flfl 0 Q 0 1 1 Ö 2 S4S » H Y N K PRELIMINARY •HYUNDAI HY234001 SEMICONDUCTOR 512KX 8-Bit C M O S MASK ROM M631200A-MAY92 DESCRIPTION FEATURES The HY234001 is mask-programmable ROM organized as 524,288 words by 8 bits. It


    OCR Scan     		PDF 4b750flfl HY234001 512KX M631200A-MAY92 HY234001 Speed-150/200/250 220mW 32-pin

    HY531000

    Abstract: ci 7483 ic 7483 block diagram DIN 748-3 INTERNAL DIAGRAM OF IC 7483
    Text: HYUNDAI ELECTRONICS SIE D •HYUNDAI • 4b750flfl OOOObll ^02 ■ HYNK H SEMICONDUCTOR Y 5 3 _ I M 1 I- H ii M ( s I IIK V M B M 171202B-JAN92 DESCRIPTION FEATURES The HY531000 is a high speed, low power 1,048,576X1 bit CM OS dynam ic random ac­


    OCR Scan     		PDF 750flfl HY531000 576X1 M171202B-JAN92 0j516 ci 7483 ic 7483 block diagram DIN 748-3 INTERNAL DIAGRAM OF IC 7483

    bPA20

    Abstract: No abstract text available
    Text: •HYUNDAI H Y 5 1 V 1 7 1 0 0 A S e r ie s 16M x 1-bit CMOS DRAM PRELIMINARY DESCRIPTION The HY51V17100Ais the new generation and fast dynamic RAM organized 16,777,216 x 1-bit. The HY51V17100A utilizes Hyundai's CMOS silicon gate process technology as well as advanced circuit techniques to provide wide


    OCR Scan     		PDF HY51V17100Ais HY51V17100A HY51V17100A 1AD22-00-MAY94 4b750flfl HY51V17100AJ HY51V17100ASLJ HY51V17100AT HY51V17100ASLT bPA20

    Untitled

    Abstract: No abstract text available
    Text: •HYUNDAI SEMICONDUCTOR H Y M 5 8 1 O O O A S e rie s 1M x 8-bit CMOS DRAM MODULE DESCRIPTION The HYM581000A is a 1M x 8-bit Fast page mode CMOS DRAM module consisting of two HY514400 in 20/26 pin SOJ on a 30 pin glass-epoxy printed circuit board. 0.2^uF decoupling capacitor Is mounted for each DRAM.


    OCR Scan     		PDF HYM581000A HY514400 HYM581000AM 50nYCLE 1BB03-20-MAY93 061MAX.

    Untitled

    Abstract: No abstract text available
    Text: •HYUNDAI HYM532124A W-Series 1M x 32-bit CMOS DRAM MODULE with EXTENDED DATA OUT DESCRIPTION The HYM532124A is a 1M x 32-bit EDO mode CMOS DRAM module consisting of two HY5118164B in 42/42 pin S O J or 44/50 pin TSOPII on a 72 pin glass-epoxy printed circuit board. Two 0.01 nF decoupling capacitors are


    OCR Scan     		PDF HYM532124A 32-bit HY5118164B HYM532124AW/ASLW HYM532124AWG/ASLWG HYM532124A HYM532124AT A0005

    Untitled

    Abstract: No abstract text available
    Text: «HYUNDAI H Y 5 1 1 7 1 O O A S e r ie s 1 6 M x 1 - b it CM O S DRAM DESCRIPTION The HY5117100A is the new generation and fast dynamic RAM organized 16,777,216 x 1-bit. The HY5117100A utilizes Hyundai's CMOS silicon gate process technology as well as advanced circuit techniques to provide wide


    OCR Scan     		PDF HY5117100A HY5117100A HY5117100Ato tRASI13) 1RP02) 1AD20-10-MAY94 HY51171OOA HY5117100AJ

    Untitled

    Abstract: No abstract text available
    Text: HYUNDAI HY5117410 Series SEMICONDUCTOR 4M X 4-bit CMOS DRAM with Write-Per-Bit DESCRIPTION The HY5117410 is the new generation and fast dynamic RAM organized 4,194,304 x 4-bit with function of Write-Per-Bit. The HY5117410 utilizes Hyundai’s CMOS silicon gate process technology as well as advanced


    OCR Scan     		PDF HY5117410 1AD06-10-APR93 HY5117410JC HY5117410UC HY5117410TC HY5117410LTC

    HYM53

    Abstract: No abstract text available
    Text: • HYUNDAI HYM536A810A M-Series 8M X 36-bit CMOS DRAM MODULE DESCRIPTION The HYM536A81OA is a 8M x 36-bit Fast page mode CMOS DRAM module consisting of eighteen HY5117400A in 24/26 pin TSOPII on a 72 pin glass-epoxy printed circuit board. 0.22^F decoupling capacitor is mounted for each


    OCR Scan     		PDF HYM536A810A 36-bit HYM536A81OA HY5117400A HYM536A81OAM/ASLM HYM536A810AMG/ASLMG HYM536A800A/ASL 1CF16-10-AUG95 HYM53

    HY5116100B

    Abstract: No abstract text available
    Text: HY5116100B Series -HYUNDAI 16Mx 1-bit CMOS DRAM DESCRIPTION The HY5116100B is the new generation and fast dynamic RAM organized 16,777,216 x 1-bit. TheHY5116100B utilizes Hyundai’s C M O S silicon gate process technology as well as advanced circuit techniques to provide wide


    OCR Scan     		PDF HY5116100B TheHY5116100B 1AD41-00-MAY9S 4b750Ã 0GG435b HY5116100BJ HY5116100BSLJ

    Untitled

    Abstract: No abstract text available
    Text: HYM581600 M-Series •H Y U N D A I 16M X 8-bit CMOS ORAM MODULE DESCRIPTION The HYM581600 is a 16M x 8-bit Fast page mode CMOS DRAM module consisting of eight HY5116100 in 24/28 pin SOJ or TSOP-II on a 30 pin glass-epoxy printed circuit board. 0.22/xF decoupling capacitor Is mounted for


    OCR Scan     		PDF HYM581600 HY5116100 22/xF HYM581600M/LM/TM/LTM 891MAX HYM581600TM/LTM 25IMAX. 1BD01-01-FEB94

    HYM536410MG

    Abstract: No abstract text available
    Text: HYM536410 M -Series •HYUN DAI 4M X 36-blt CMOS DRAM MODULE DESCRIPTION The HYM536410 is a 4M x 36-bit Fast page mode CMOS DRAM module consisting of eight HY5117400 in 24/28 pin SOJ and four HY514100A in 20/26 pin SOJ on a 72 pin glass-epoxy printed circuit board. 0.22pF decoupling


    OCR Scan     		PDF HYM536410 36-blt 36-bit HY5117400 HY514100A HYM53641OM/LM HYM536410MG/LMG 1CE06-20-MAV94 HYM536410MG

    Untitled

    Abstract: No abstract text available
    Text: •HYUNDAI SEMICONDUCTOR HY531000 Series 1Mx 1-bit CMOS DRAM DESCRIPTION The HY531000 is the new generation and fast dynamic RAM organized 1,048,576 x 1-bit. The HY531000 utilizes Hyundai’s CMOS silicon gate process technology as well as advanced circuit techniques to provide wide operating


    OCR Scan     		PDF HY531000 300mil 1AB04-30-APR93 HY531000S HY531000J

    Untitled

    Abstract: No abstract text available
    Text: •HYUNDAI SEMICONDUCTOR HY5116400 Series 4M X 4-bit CMOS DRAM DESCRIPTION The HY5116400 is the new generation and fast dynamic RAM organized 4,194,304 x 4-bit. The HY5116400 utilizes Hyundai’s C M O S silicon gate process technology as well as advanced circuit techniques to provide wide operating


    OCR Scan     		PDF HY5116400 1AD02-10-APR93 HY5116400JC HY5116400LJC HY5116400TC HY5116400LTC

    Untitled

    Abstract: No abstract text available
    Text: • HYUNDAI HYM532224A E-Series 2M x 32-bit CMOS DRAM MODULE with EXTENDED DATA OUT DESCRIPTION The HYM532224A is a 2M x 32-bit EDO m ode CMOS DRAM m odule consisting of four HY5117804B in 28/28 pin SOJ or TSOPII and an AND gate in 16 pin SOP on a 72 pin glass-epoxy printed circuit board. 0.22nF decoupling


    OCR Scan     		PDF HYM532224A 32-bit HY5117804B HYM532224AE/ASLE/ATE/ASLTE HYM532224AEG/ASLEG/ATEG/ASLTEG 171M1N DD054M 1CE13-10-0EC94

    Untitled

    Abstract: No abstract text available
    Text: H Y 5 1 V 4 4 0 3 B • • H Y U N D A I S e r ie s IM x 4-bit CMOS DRAM with4CAS PRELIMINARY DESCRIPTION The HY51V4403B is the new generation and fast dynamic RAM organized 1,048,576 x 4-bit. The HY51V4403B has four CASs CAS0-3 which control corresponding data I/O port in conjunction with OE(eg. CASO controls DQO,


    OCR Scan     		PDF HY51V4403B 050f1 1AC1S-00-MAY94 HY51V4403BJ HY51V4403BU HYS1V4403BSU

    Untitled

    Abstract: No abstract text available
    Text: HY5117400A Series ••HYUNDAI 4M x 4-bit CMOS DRAM DESCRIPTION me HY5117400A is the new generation and fast dynamic RAM organized 4,194,304 x 4-bit. "Hie HY5117400A utilizes Hyundai's CMOS silicon gate process technology as well as advanced circuit techniques to provide wide


    OCR Scan     		PDF HY5117400A HY5117400A 1AD27-10-MAY94 HY5117400AJ HY5117400ASLJ HY5117400AT HY5117400ASLT

    HY514460

    Abstract: No abstract text available
    Text: •HYUNDAI HY514460 Series SEMICONDUCTOR 256 Kx164 R C MO S DRAM with 2 C A S & W P B PRELIMINARY DESCRIPTION The HY514460 is the new generation and fast dynamic RAM organized 262,144 x 16-bit configuration employing advanced submicron CMOS process technology and advanced circuit design technique to achieve fast access


    OCR Scan     		PDF HY514460 Kx164 16-bit 400mil 40pin 40/44pin 1AC12-00-APR93 DDQ1553

    Untitled

    Abstract: No abstract text available
    Text: HY5116400A Series •{HYUNDAI 4M X 4-bit CMOS DRAM DESCRIPTION The HY5116400A is the new generation and fast dynamic RAM organized 4,194,304 x 4-bit. The HY5116400A utilizes Hyundai’s CMOS silicon gate process technology as advanced circuit techniques to provide wide operating


    OCR Scan     		PDF HY5116400A HY5116400A 1AD23-10-MAY95 HY5116400AJ HY5116400ASLJ HY511 400AT

    Untitled

    Abstract: No abstract text available
    Text: •HYUNDAI SEMICONDUCTOR H Y 5 1 4 4 1 0 A S e r ie s 1M x 4-bit CMOS DRAM with Write-Per-Bit DESCRIPTION The HY514410A is the new generation and fast dynamic RAM organized 1,048,576 x 4-bit with function of Write-Per-Bit. The HY514410A utilizes Hyundai's CMOS silicon gate process technology as well as advanced


    OCR Scan     		PDF HY514410A 8-10-A 4b750fl 000147b HY514410AJ HY514410AU HY514410AT

    HYM536100M

    Abstract: No abstract text available
    Text: 'HYUNDAI SEMICONDUCTOR HYM536100 Series 1M x 36-bit CMOS DRAM MODULE DESCRIPTION The HYM536100 Is a 1M x 36-bit Fast page mode CMOS ORAM module consisting of eight HY514400 and four HY531000 in 20/26 pin SOJ on a 72 pin glass-epoxy printed circuit board. 0.22fiF decoupling capacitor is mounted


    OCR Scan     		PDF HYM536100 36-bit HY514400 HY531000 22fiF HYM536100M HYM536100MG 1CC02-10-MAY93

    Untitled

    Abstract: No abstract text available
    Text: •HY U ND A I HYM572A414A F-Series Unbuffered 4M x 72-bit CMOS DRAM MODULE _ with EXTENDED DATA OUT DESCRIPTION T ie HYM572A414A is a 4M x 72-bit EDO mode CMOS DRAM module consisting of eighteen HY5117804B in 28/28 SOJ or TSOP-II and one 2048 bit EEPROM on a 168 pin glass-epoxy printed circuit board. 0.1nF and 0.01 ^F


    OCR Scan     		PDF HYM572A414A 72-bit HY5117804B HYM572A414AFG/ATFG/ASLFG/ASLTFG -0004gOQ 4b750flfl D005fl51 1EC07-10-JAN96

    Untitled

    Abstract: No abstract text available
    Text: HYUNDAI HY62256B-I Series _ 32Kx 8-bit CMOS SRAM PRELIMINARY DESCRIPTION The HY62256B-I is a high-speed, low power and 32,768 x 8-bits CMOS static RAM fabricated using Hyundai’s high performance twin tub CMOS process technology. This high reliability process coupled with innovative circuit


    OCR Scan     		PDF HY62256B-I 1DC05-11-MAY94 HY62256BLP-I HY62256BLLP-I HY62256BU-I HY62256BLU-I