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    Untitled

    Abstract: No abstract text available
    Text: •HYUNDAI SEMICONDUCTOR HY5116400 Series 4M X 4-bit CMOS DRAM DESCRIPTION The HY5116400 is the new generation and fast dynamic RAM organized 4,194,304 x 4-bit. The HY5116400 utilizes Hyundai’s C M O S silicon gate process technology as well as advanced circuit techniques to provide wide operating


    OCR Scan     		PDF HY5116400 1AD02-10-APR93 HY5116400JC HY5116400LJC HY5116400TC HY5116400LTC

    Untitled

    Abstract: No abstract text available
    Text: HY638100AS/HY6381OOAL HYUNDAI 128 X 8 Bit FAST SRAM PRELIMINARY DESCRIPTION The HY638100 is a 1,048,576 -bit high-speed Static Random Access Memory organized as 131,072 words by 8 bits. The HY638100 uses eight common input and output liness and has an output enable pin which operates


    OCR Scan     		PDF HY638100AS/HY6381OOAL HY638100 15/17/20/25ns HY638100AS 150mA HY638100AL 150all 1DG02-22-MAY95 HY638100A

    mr 6710

    Abstract: HY514400A HY514400ALJ HY514400ALR HY514400ALT F 421
    Text: » « H Y U N D A I H Y 5 1 4 4 0 0 A Vi • 1M X 4-bit S e r ie s CMOS DRAM DESCRIPTION The HY51440QA is the 2nd generation and fast dynamic RAM organized 1,048,576 x 4-bit. The HY514400A utilizes Hyundai’s CMOS silicon gate process technology as weH as advanced circuit techniques to provide wide


    OCR Scan     		PDF HY514400A HY51440GA 014Q3 1AC07-30-MAY95 4L750Ã HY514400AJ HY514400ALJ mr 6710 HY514400ALR HY514400ALT F 421

    Untitled

    Abstract: No abstract text available
    Text: u v H u n i a 8Mx8 bit Synchronous DRAM Series m /3 Y U N U A I HY57V648010/ HY57V648020/ HY57V658010/ HY57V658020 HY57V648011/ HY57V648021/ HY57V6S8011/ HY57V658021 PRELIMINARY DESCRIPTION HY57V648010 description and pinout, offering fully synchronous operation. All address, data and control inputs are


    OCR Scan     		PDF HY57V648010/ HY57V648020/ HY57V658010/ HY57V658020 HY57V648011/ HY57V648021/ HY57V658011/ HY57V658021 HY57V648010 HY57V648020

    Untitled

    Abstract: No abstract text available
    Text: “H Y U N D A I HY29F080 Series 1M x 8-bit CMOS 5.0 volt-only, Sector Erase Flash Memory KEY FEATURES 5.0 V ± 10% Read, Program, and Erase - Minimizes system-level power requirements High performance - 55 ns access time Internal Programming Algorithms - Automatically programs and verifies data at a


    OCR Scan     		PDF HY29F080 G-70I, T-70I, R-70I G-70E, T-70E, R-70E G-90I, T-90I,

    Untitled

    Abstract: No abstract text available
    Text: -HYUNDAI H Y 5 1 4 4 0 0 A Series 1M X 4-bit CMOS DRAM DESCRIPTION The HY514400A is the 2nd generation and fast dynam ic RAM organized 1,048,576 x 4-bit. The HY514400A utilizes Hyundai’s CM O S silicon gate process technology as well as advanced circuit techniques to provide wide


    OCR Scan     		PDF HY514400A HY514400A 047fl 4L750Ã 1AC07-30-MAY95 HY514400AJ HY514400ALJ HY514400AT

    Untitled

    Abstract: No abstract text available
    Text: “HYUNDAI HY51V4810B Series 5 1 2 K x 8 -b tt CM O S DRAM w it h W r it e - P e r - B it PRELIMINARY DESCRIPTION The HY51V4810B is the new generation and fast dynamic RAM organized 524,288 x 8-bits. The HY51V4810B utilizes Hyundai’s CMOS silicon gate process technology as well as advanced circuit techniques to provide wide


    OCR Scan     		PDF HY51V4810B HY51V4810B 1AC20-00-MAY94 HY51V4810BJC HY51V4810BSUC HY51V4810BTC

    Untitled

    Abstract: No abstract text available
    Text: HY5216256 Series -HYUNDAI 256Kx 16-bit Video RAM with 2CAS Introduction Overview The 4megabit Video RAM is an application specific memory device designed for graphics applications. It comprises a 256k x16 DRAM memory array interfaced to a 256 x16 Serial Access Memory SAM , or register.


    OCR Scan     		PDF HY5216256 256Kx 16-bit 16bits 4b750Ã 1VC01-00-MAY95 525mil 64pin 4b750flÃ

    Untitled

    Abstract: No abstract text available
    Text: HY62256A Series •HYUNDAI 32K X 8-blt CMOS SRAM DESCRIPTION The HY62256A is a high-speed, low power and 32,768 x 8-bits CMOS static RAM fabricated using Hyundai’s high performance twin tub CMOS process technology. This high reliability process coupled with innovative circuit


    OCR Scan     		PDF HY62256A speed-55/70/85/100ns 1DC01-11-MAY94 HY62256AP HY62256ALP HY62256ALLP

    Untitled

    Abstract: No abstract text available
    Text: HYUNDAI H Y 5 3 10 0 0 A SEMICONDUCTOR 1M X S e rie s 1-bit CMOS DRAM DESCRIPTION The HY531000A is the new generation and fast dynamic RAM organized 1,048,576 x 1-bit. The HY531000A utilizes Hyundai’s CMOS silicon gate process technology as well as advanced circuit techniques to provide wide operating


    OCR Scan     		PDF HY531000A 300mil 1AB05-10-APR93 HY531000AS HY531000ALS HY531000AJ HY531000AU

    Untitled

    Abstract: No abstract text available
    Text: HY5116800 Series • H Y UN D A I 2M x 8-bit CMOS DRAM DESCRIPTION The HY5116800 is the new generation and fast dynamic RAM organized 2,097,152 x 8-bit. The HY5116800 utilizes Hyundai's CMOS silicon gate process technology as well as advanced circuit techniques to provide wide


    OCR Scan     		PDF HY5116800 HY5116800 1AD07-10-MAV94 0Q0313& HY5116800JC HY5116800SLJC HY5116800TC

    Untitled

    Abstract: No abstract text available
    Text: H Y 5 1 V 1 6 1 O O A “H Y U N D A I S e r ie s 16MX 1-bit CMOS DRAM PRELIMINARY DESCRIPTION TTie HY51V16100A is the new generation and fast dynamic RAM organized 16,777,216x 1-bit. The HY51V16100A utilizes Hyundai's CMOS silicon gate process technology as well as advanced circuit techniques to provide wide


    OCR Scan     		PDF HY51V16100A HY51V16100A V16100Ato 1AD21-0O-MAY94 HY51V16100AJ HY51V16100ASU HY51V16100AT HY51V161OOASLT HY51V16100AR

    m4512

    Abstract: HYM59256AM
    Text: HYUNDAI 3TE ELECTRONI CS » m 4b750flö Ü0 0 Q3 7 Ô T •HYNK 256KX 9-Bit CMOS DRAM MODULE M451201A-APR9T DESCRIPTION FEATURES The HYM59256A is a 256K words by 9bits dynamic RAM m odule and consists o f Fast Page mode CM OS DRAMs of two HY534256J in 20/26 pin SOJ and one HY53C256LF in 18


    OCR Scan     		PDF 4b750flö 256KX M451201A-APR9T HYM59256A HY534256J HY53C256LF 22\sF HYM59256AM HYM59256AP HYM59256A-70 m4512

    F0016

    Abstract: No abstract text available
    Text: “H Y U N D A I H Y 6 2 8 1 0 0 A S e r ie s 128K X 8-bit CMOS SRAM PRELIMINARY DESCRIPTION The HY628100A is a high-speed, low power and 131,072 x 8-bits CMOS static RAM fabricated using Hyundai’s high performance twin tub CMOS process technology. This high reliability process coupled with innovative circuit


    OCR Scan     		PDF HY628100A HY628100AP HY628100ALP HY628100ALLP HY628100AG HY628100ALG HY628100ALLG HY628100AT1 F0016

    Untitled

    Abstract: No abstract text available
    Text: HYUNDAI H Y 5 1 V 1 7 4 0 0 A S e r ie s 4M X 4-bit CMOS DRAM PRELIMINARY DESCRIPTION The HY51V17400A is the new generation and fast dynamic RAM organized 4,194,304 x 4-bit. The HY51V17400A utilizes Hyundai's CMOS silicon gate process technology as well as advanced circuit techniques to provide wide


    OCR Scan     		PDF HY51V17400A HY51V17400A 1AD35-00-MA 4b750flà HY51V17400AJ HY51V17400ASU HY51V17400AT HY51V17400ASLT

    HY53C256LS

    Abstract: HY53C256S-70 HY53C256 HY53C256LF HY53C256LS70
    Text: HYUNDAI HY53C256 Series 256KX 1-bit CMOS DRAM DESCRIPTION The HY53C256 is fast dynamic RAM organized 262,144 x 1-bit. The HY53C256 utilizes Hyundai’s CMOS silicon gate process technology as well as advanced circuit techniques to provide wide operating margins to the users.


    OCR Scan     		PDF HY53C256 300mil 16pin 330mil 18pin 300BSC 1AA01-20-MAY94 HY53C256LS HY53C256S-70 HY53C256LF HY53C256LS70

    10EZ15

    Abstract: 85550 HY514400A HY514400ALJ HY514400ALR HY514400ALT WH33 D03n c 7150M
    Text: •HYUNDAI H Y 5 1 4 4 0 0 A S e r i e s 1 M x 4-bit CMOS DRAM DESCRIPTION The HY514400A is the 2nd generation and fast dynamic RAM organized 1,048,576 x 4-bit. The HY514400A utilizes Hyundai’s CM O S silicon gate process technology as well as advanced circuit techniques to provide wide


    OCR Scan     		PDF HY514400A 1AC07-30-MAY95 4L750Ã DDD4171 HY514400AJ HY514400ALJ 10EZ15 85550 HY514400ALR HY514400ALT WH33 D03n c 7150M

    HY531000S

    Abstract: No abstract text available
    Text: H Y 5 3 1 0 0 0 S e r ie s IM X 1-bit CMOS DRAM "H Y U N D A I DESCRIPTION The HY531000 is the new generation and fast dynamic RAM organized 1,048,576 x 1-bit. The HY531000 utilizes Hyundai’s CMOS silicon gate process technology as well as advanced circuit techniques to provide wide operating


    OCR Scan     		PDF HY531000 300mil 1AB04-30-MAY94 4b750flà HY531000S HY531000J 1AB04-30-MAŠHY531000S

    Untitled

    Abstract: No abstract text available
    Text: HY67V16100/101 »HYUNDAI 64K x 16 Bit SYNCHRONOUS CMOS SRAM PRELIMINARY DESCRIPTION This device integrates high-speed 64Kx16 SRAM core, address registers, data input registers, a 2-bit burst address counter and pipelined output. All synchronous inputs pass through registers controlled by a positive-edge


    OCR Scan     		PDF HY67V16100/101 64Kx16 486/Pentium 7ns/12ns/17ns 67MHz 486/Pentium 1DH06-11-MAY9S HY67V16100/101 1DH06-11-MAY95