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SK Hynix Inc HY514400AJ-70
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Bristol Electronics	HY514400AJ-70		82			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Quest Components	HY514400AJ-70		235			1 $4.23 10 $2.115 100 $1.833 1000 $1.833 10000 $1.833	Buy Now
	HY514400AJ-70		167			1 $4.23 10 $4.23 100 $2.6085 1000 $2.6085 10000 $2.6085	Buy Now
	HY514400AJ-70		115			1 $4.23 10 $4.23 100 $2.6085 1000 $2.6085 10000 $2.6085	Buy Now
	HY514400AJ-70		26			1 $4.23 10 $2.115 100 $2.115 1000 $2.115 10000 $2.115	Buy Now
SK Hynix Inc HY514400ALJ-60 1M X 4 FAST PAGE DRAM, 60 NS, PDSO20
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Quest Components	HY514400ALJ-60		330			1 $8.82 10 $8.82 100 $3.822 1000 $3.528 10000 $3.528	Buy Now
	HY514400ALJ-60		30			1 $8.82 10 $4.41 100 $4.41 1000 $4.41 10000 $4.41	Buy Now
hyn HY514400AJ70 1M X 4, FAST PAGE MODE Fast Page DRAM, 1MX4, 70ns, CMOS, PDSO20
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
ComSIT USA	HY514400AJ70		120			1 - 10 - 100 - 1000 - 10000 -	Get Quote

HY514400 Datasheets (38)

Part	Manufacturer	Description	Datasheet Type	PDF
HY514400	Unknown	Historical semiconductor price guide (US$ - 1998). From our catalog scanning project.	Historical	PDF
HY514400	Unknown	1M x 4-bit CMOS DRAM	Scan	PDF
HY514400-10	Unknown	Static RAM, Dynamic RAM, Video RAM - Short Form Datasheets	Scan	PDF
HY514400-80	Unknown	Static RAM, Dynamic RAM, Video RAM - Short Form Datasheets	Scan	PDF
HY514400A	Hyundai	1m x 4-bit Cmos DRAM	Scan	PDF
HY514400AJ	Hynix Semiconductor	1Mx4, Fast Page mode	Original	PDF
HY514400AJ	Hyundai	1M x 4-bit CMOS DRAM	Scan	PDF
HY514400AJ50	Hyundai	1M x 4-Bit CMOS DRAM	Scan	PDF
HY514400AJ60	Hyundai	1M x 4-Bit CMOS DRAM	Scan	PDF
HY514400AJ70	Hyundai	1M x 4-Bit CMOS DRAM	Scan	PDF
HY514400ALJ	Hyundai	1M x 4-bit CMOS DRAM	Scan	PDF
HY514400ALJ50	Hyundai	1M x 4-Bit CMOS DRAM	Scan	PDF
HY514400ALJ60	Hyundai	1M x 4-Bit CMOS DRAM	Scan	PDF
HY514400ALJ70	Hyundai	1M x 4-Bit CMOS DRAM	Scan	PDF

HY514400ALR	Hyundai	1M x 4-bit CMOS DRAM	Scan	PDF
HY514400ALR50	Hyundai	1M x 4-Bit CMOS DRAM	Scan	PDF
HY514400ALR60	Hyundai	1M x 4-Bit CMOS DRAM	Scan	PDF
HY514400ALR70	Hyundai	1M x 4-Bit CMOS DRAM	Scan	PDF
HY514400ALT	Hyundai	1M x 4-bit CMOS DRAM	Scan	PDF
HY514400ALT50	Hyundai	1M x 4-Bit CMOS DRAM	Scan	PDF

HY514400 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
HY514400A Abstract: HY514400AJ HY514400ALJ HY514400ALT HY514400AT Text: HY514400A 1Mx4, Fast Page mode DESCRIPTION This family is a 4M bit dynamic RAM organized 1,048,576 x 4-bit configuration with Fast Page mode CMOS DRAMs. Fast Page mode offers high speed of random access memory within the same row. The circuit and process design	Original	HY514400A /RAS-on28ms 10/Jan HY514400A HY514400AJ HY514400ALJ HY514400ALT HY514400AT	PDF
HY514400B Abstract: No abstract text available Text: HY514400B FUNCTIONAL BLOCK DIAGRAM DQ0 ~ DQ3 4 8 Data Input Buffer WE CAS OE Data Output Buffer 4 4 CAS Clock Generator 4 A0 Cloumn Predecoder 10 A1 10 Column Decoder A3 A4 A5 A6 Address Buffer A2 Sense Amp I/O Gate Refresh Controller Refresh Counter (10)	Original	HY514400B HY514400B	PDF
Untitled Abstract: No abstract text available Text: •HYUNDAI SEMICONDUCTOR H Y M 5 8 1 O O O A S e rie s 1M x 8-bit CMOS DRAM MODULE DESCRIPTION The HYM581000A is a 1M x 8-bit Fast page mode CMOS DRAM module consisting of two HY514400 in 20/26 pin SOJ on a 30 pin glass-epoxy printed circuit board. 0.2^uF decoupling capacitor Is mounted for each DRAM.	OCR Scan	HYM581000A HY514400 HYM581000AM 50nYCLE 1BB03-20-MAY93 061MAX.	PDF
Untitled Abstract: No abstract text available Text: • « H Y U N D A I SEMICONDUCTOR H Y M 5 8 1 O O O B S e r ie s 1M X 8 - b it CMOS DRAM MODULE PRELIMINARY DESCRIPTION The HYM581000B is a 1M x 8-bit Fast page mode CMOS DRAM module consisting of two HY514400A in 20/26 pin SOJ on a 30 pin glass-epoxy printed circuit board. 0.22//F decoupling capacitor is mounted for each DRAM.	OCR Scan	HYM581000B HY514400A 22//F HYM581000BM/BLM 1BB05-00-MAY93 4b750fifi 4b75Dflfl	PDF
HYM536100M Abstract: No abstract text available Text: 'HYUNDAI SEMICONDUCTOR HYM536100 Series 1M x 36-bit CMOS DRAM MODULE DESCRIPTION The HYM536100 Is a 1M x 36-bit Fast page mode CMOS ORAM module consisting of eight HY514400 and four HY531000 in 20/26 pin SOJ on a 72 pin glass-epoxy printed circuit board. 0.22fiF decoupling capacitor is mounted	OCR Scan	HYM536100 36-bit HY514400 HY531000 22fiF HYM536100M HYM536100MG 1CC02-10-MAY93	PDF
Untitled Abstract: No abstract text available Text: •HYUNDAI HYM532100A Series SEMICONDUCTOR 1M x 32-bit CMOS DRAM MODULE PRELIMINARY DESCRIPTION The HYM532100A is a 1M x 32-bit Fast page mode CMOS DRAM module consisting of eight HY514400A in 20/26 pin SOJ on a 72 pin glass-epoxy printed circuit board. 0.22/iF decoupling capacitor Is mounted for each DRAM.	OCR Scan	HYM532100A 32-bit HY514400A 22/iF HYM5321OOAM/ALM HYM532100AMG/ALMG 1CC03-00-M	PDF
Untitled Abstract: No abstract text available Text: HYM •HYUNDAI 1M X 532100A M-Series 32-blt CMOS DRAM MODULE DESCRIPTION The HYM532100A is a 1M x 32-bit R e t page mode CMOS ORAM module consisting of eight HY514400A in 20/26 pin SOJ on a 72 pin glass-epoxy printed circuit board. 0.22nF decoupling capacitor is mounted lo r each DRAM.	OCR Scan	32100A 32-blt HYM532100A 32-bit HY514400A HYM532100AM/ALM HYM532100AMG/ALMG compatible004M 750M6 004t1	PDF
Untitled Abstract: No abstract text available Text: HYUNDAI HYM532100A M-Series 1M x 32-blt CM O S DRAM MODULE DESCRIPTION The HYM532100A is a 1M x 32-bit Fast page mode CMO S DRAM module consisting of eight HY514400A in 20/26 pin SOJ on a 72 pin glass-epoxy printed circuit board. 0.2^uF decoupling capacitor is mounted for each DRAM.	OCR Scan	HYM532100A 32-blt 32-bit HY514400A HYM532100AM/ALM HYM532100AMG/ALMG M532100A 1CC03-01-FEB94 4b75DBB	PDF
Untitled Abstract: No abstract text available Text: H Y 5 1 4 4 0 0 S e r ie s 1 M x 4-bit C M O S D R A M • • H Y U N D A I DESCRIPTION Hie HY514400 is the new generation and fast dynamic RAM organized 1,048,576 x 4 bits. The HY514400 utilizes Hyundai’s C M O S silicon gate process technology as well as advanced circuit techniques to provide wide operating	OCR Scan	HY514400 1AC02-30-MAY94 4b750flfl DG0244T 8700M 9060f7 1AC02-30-M	PDF
mr 6710 Abstract: HY514400A HY514400ALJ HY514400ALR HY514400ALT F 421 Text: » « H Y U N D A I H Y 5 1 4 4 0 0 A Vi • 1M X 4-bit S e r ie s CMOS DRAM DESCRIPTION The HY51440QA is the 2nd generation and fast dynamic RAM organized 1,048,576 x 4-bit. The HY514400A utilizes Hyundai’s CMOS silicon gate process technology as weH as advanced circuit techniques to provide wide	OCR Scan	HY514400A HY51440GA 014Q3 1AC07-30-MAY95 4L750Ã HY514400AJ HY514400ALJ mr 6710 HY514400ALR HY514400ALT F 421	PDF
Untitled Abstract: No abstract text available Text: »HYUNDAI HY514400B Series 1Mx 4-bit CMOS DRAM DESCRIPTION The HY514400B is the new generation and fast dynamic RAM organized 1,048,576 x 4-bit. The HY514400B utilizes Hyundai's CMOS silicon gate process technology as well as advanced circuit techniques to provide wide	OCR Scan	HY514400B FEATURE00 1AC11-10-MAY95 HY514400BJ HY514400BLJ HY514400BSU	PDF
HYM532200 Abstract: No abstract text available Text: •HYUNDAI HYM532200A M-Series 2M X 32-bit CMOS DRAM MODULE DESCRIPTION The HYM532200Ais a 2M x 32-bit Fast page m ode CMOS DRAM m odule consisting o f sixteen HY514400A in 20/26 pin SOJ on a 72 pin glass-epoxy printed circuit board. 0.22\|iFdecoupling capacitor is mounted for each ORAM.	OCR Scan	HYM532200A 32-bit HYM532200Ais HY514400A HYM532200AM/ALM HYM532200AMG/ALMG DQ0-DQ31) 1C003-01-FEB94 HYM532200	PDF
57210 Abstract: No abstract text available Text: •HYUNDAI HYM572103 N-Series 1M X 72-blt CMOS DRAM MODULE DESCRIPTION The HYM572103 is a 1M x 72-bit Fast page m ode CMOS DRAM m odule consisting of sixteen HY514400A in 20/26 pin SOJ o r TSOP-II tw o HY514403B in 24/26 pin SOJ or TSOP-II and two 16-bit BiCMOS line driver in TSSOP on	OCR Scan	HYM572103 72-blt 72-bit HY514400A HY514403B 16-bit HYM572103NG/TNG/LMG/LTMG 121mW 209mW 57210	PDF
HYM5361 Abstract: HYM536100AMG hym536100 Text: " H Y U N D A I SEMICONDUCTOR H Y M 5 3 6 1 0 0 A S e r ie s 1M x 36-bit CMOS DRAM MODULE PRELIMINARY DESCRIPTION The HYM536100Ais a 1M x 36-bit Fast page mode CMOS DRAM module consisting of eight HY514400A in 20/26 pin SOJ and four HY531000A in 20/26 pin SOJ on a 72 pin glass-epoxy printed circuit board, 0.22 iFdecoupling	OCR Scan	36-bit HYM536100Ais HY514400A HY531000A HYM536100AM/ALM HYM536100AMG/ALMG 1CC04-00-MAYW HYM536100A 1CC04-00-MAY93 HYM5361 HYM536100AMG hym536100	PDF

Untitled Abstract: No abstract text available Text: •HYUNDAI HYM581000B Series SEMICONDUCTOR 1M x 8-bit CMOS DRAM MODULE PRELIMINARY DESCRIPTION The HYM581000B is a 1M x 8-brt Fast page mode CMOS DRAM module consisting of two HY514400A in 20/26 pin SOJ on a 30 pin giass-epoxy printed circuit board. 0.2^/F decoupling capacitor is mounted for each DRAM.	OCR Scan	HYM581000B HY514400A HYM581000BM/BLM 1BB0fr40-M 1BB05-00-M 1BB05-00-MAY93	PDF
HYM532100 Abstract: hym532100m Text: HYUNDAI SEMICONDUCTOR HYM532100 Series 1M x 32-bit CMOS DRAM MODULE DESCRIPTION The HYM532100 Is a 1M x 32-blt Fast page mode CMOS DRAM module consisting of eight HY514400 in 20/26 pin SOJ on a 72 pin glass-epoxy printed circuit board. 0.2i>uF decoupling capacitor is mounted for each DRAM.	OCR Scan	32-bit HYM532100 32-blt HY514400 HYM532100M HYM532100MG CX5-BEFORE-K55 1CC01-10-MAY93	PDF
Untitled Abstract: No abstract text available Text: -HYUNDAI H Y 5 1 4 4 0 0 A Series 1M X 4-bit CMOS DRAM DESCRIPTION The HY514400A is the 2nd generation and fast dynam ic RAM organized 1,048,576 x 4-bit. The HY514400A utilizes Hyundai’s CM O S silicon gate process technology as well as advanced circuit techniques to provide wide	OCR Scan	HY514400A HY514400A 047fl 4L750Ã 1AC07-30-MAY95 HY514400AJ HY514400ALJ HY514400AT	PDF
HYM536100A Abstract: No abstract text available Text: H Y U ND A I HYM536100A Series SEMICONDUCTOR 1M x 36-bit CMOS DRAM MODULE PRELIMINARY DESCRIPTION The HYM536100A is a 1M x 36-bit Fast page mode CMOS DRAM module consisting of eight HY514400A in 20/26 pin SOJ and four HY531000A in 20/26 pin SOJ on a 72 pin glass-epoxy printed circuit board. 0.22p.F decoupling	OCR Scan	HYM536100A 36-bit HY514400A HY531000A HYM536100AM/ALM HYM536100AMG/ALMG 132-OmW DGG20b4	PDF
Untitled Abstract: No abstract text available Text: HYM532200A M-Series •HYUNDAI 2M X 32-bit CMOS DRAM MODULE DESCRIPTION The HYM532200A Is a 2M x 32-bit Fast page mode CMOS DRAM module consisting of sixteen HY514400A in 20/26 pin SOJ on a 72 pin glass-epoxy printed circuit board. Q.22fi? decoupling capacitor is mounted for each DRAM.	OCR Scan	HYM532200A 32-bit HY514400A HYM532200AM/ALM HYM532200AMG/ALMG 1CD03-01-FEBM DGD34SD	PDF
Untitled Abstract: No abstract text available Text: HYM536100A M-Series •HYUNDAI 1M X 36-bH CMOS DRAM MODULE DESCRIPTION The HYM536100A is a 1M x 36-bit Fast page mode CMOS DRAM module consisting of eight HY514400A in 20/26 pin SOJ and four HY531000A in 20/26 pin SOJ on a 72 pin glass-epoxy printed circuit board. 0.22^F decoupling	OCR Scan	HYM536100A 36-bH 36-bit HY514400A HY531000A HYM536100AM/ALM HYM536100AMG/ALMG DQ0-DQ35)	PDF
Untitled Abstract: No abstract text available Text: HY514400B Series - H Y U N D A I 1Mx4-bit CMOS DRAM DESCRIPTION The HY514400B is the new generation and fast dynamic RAM organized 1,048,576 x 4-bit. The HY514400B utilizes Hyundai’s C M O S silicon gate process technology as well as advanced circuit techniques to provide wide	OCR Scan	HY514400B HY514400B 4b750flfl 1AC11-10-MAY95 HY514400BJ HY514400BLJ HV514400BSLJ	PDF
Untitled Abstract: No abstract text available Text: •HYUNDAI HY514400 Series SEMICONDUCTOR 1Mx 4-bit CMOS DRAM DESCRIPTION The HY514400 is the new generation and fast dynamic RAM organized 1,048,576 x 4 bits. The HY514400 utilizes Hyundai’s C M O S silicon gate process technology a s well as advanced circuit techniques to provide wide operating	OCR Scan	HY514400 ai050 1AC02-30-APR93 HY514400J 00014M0	PDF
HYM540A200MG Abstract: No abstract text available Text: HYM540A200 M-Series HYUNDAI 2M X 40-bit CMOS DRAM MODULE DESCRIPTION The HYM540A200 is a 2M x 40-bit Fast page mode CMOS DRAM module consisting of twenty HY514400A in 20/26 pin SOJ on a 72 pin glass-epoxy printed circuit board. 0.2^«F decoupling capacitor is mounted for each DRAM.	OCR Scan	HYM540A200 40-bit HY514400A HYM540A200M/LM HYM540A200MG/LMG GG03477 0D0347A HYM540A200MG	PDF
HYM536200AM Abstract: HYM536200A HYM536200AM/ALM WE005 HYM536200Aibm pc 700M/ALM Text: •HYUNDAI SEMICONDUCTOR HYM536200A Series 2M X 36-blt CM O S DRAM MODULE PRELIMINARY DESCRIPTION The HYM536200A is a 2M x 36-bit Fast page mode C M O S DRAM module consisting of sixteen HY514400A in 20/26 pin SO J and eight HY531000A in 20/26 pin SO J on a 72 pin glass-epoxy printed circuit board, 0.2^uF decoupling	OCR Scan	HYM536200A 36-blt 36-bit HY514400A HY531000A HYM536200AM/ALM HYM536200AMG/ALMG 11CD04-00-MAY93 36200A HYM536200AM WE005 HYM536200Aibm pc 700M/ALM	PDF

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HY514400 Price and Stock

SK Hynix Inc HY514400AJ-70

SK Hynix Inc HY514400ALJ-60

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HY514400 Datasheets (38)

HY514400 Datasheets Context Search

HY514400A

HY514400B

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HYM536100M

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mr 6710

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HYM532200

57210

HYM5361

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HYM532100

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HYM536100A

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HYM540A200MG

HYM536200AM