ATMG
Abstract: HYM5361600A HYM5361600AM HYM5361600AMG HYM5361600ATM HYM5361600ATMG
Text: HYM5361600A M-Series 16Mx36 bit FP DRAM MODULE based on 16Mx1 DRAM, with Parity, 5V, 4K-Refresh GENERAL DESCRIPTION The HYM5361600A M-Series is a 16Mx36-bit Fast Page mode CMOS DRAM module consisting of thirty-six HY5116100B in 24/26 pin SOJ or TSOP-II on a 72 pin glass-epoxy printed circuit board. 0.1µF and 0.01µF
|
Original
|
PDF
|
HYM5361600A
16Mx36
16Mx1
16Mx36-bit
HY5116100B
HYM5361600AM/ATM
HYM5361600AMG/ATMG
72-Pin
119mW
ATMG
HYM5361600AM
HYM5361600AMG
HYM5361600ATM
HYM5361600ATMG
|
HYM536100M
Abstract: No abstract text available
Text: 'HYUNDAI SEMICONDUCTOR HYM536100 Series 1M x 36-bit CMOS DRAM MODULE DESCRIPTION The HYM536100 Is a 1M x 36-bit Fast page mode CMOS ORAM module consisting of eight HY514400 and four HY531000 in 20/26 pin SOJ on a 72 pin glass-epoxy printed circuit board. 0.22fiF decoupling capacitor is mounted
|
OCR Scan
|
PDF
|
HYM536100
36-bit
HY514400
HY531000
22fiF
HYM536100M
HYM536100MG
1CC02-10-MAY93
|
Untitled
Abstract: No abstract text available
Text: »fl Y U ND ft I - • HYM5361600A M-Series 16Mx36 bit FP DRAM MODULE based on 16Mx1 DRAM, with Parity, 5V, 4K-Refresh GENERAL DESCRIPTION The HYM 5361600A M-Series is a 16Mx36-bit Fast Page mode CMOS DRAM module consisting of thirty-six HY5116100B in 24/26 pin SOJ or TSOP-II on a 72 pin glass-epoxy printed circuit board. 0.1 ¡iF and 0.01 (tF
|
OCR Scan
|
PDF
|
HYM5361600A
16Mx36
16Mx1
361600A
16Mx36-bit
HY5116100B
HYM5361600AM/ATM
HYM5361600AMG/ATMG
72-Pin
256ms
|
HYM5361
Abstract: HYM536100AMG hym536100
Text: " H Y U N D A I SEMICONDUCTOR H Y M 5 3 6 1 0 0 A S e r ie s 1M x 36-bit CMOS DRAM MODULE PRELIMINARY DESCRIPTION The HYM536100Ais a 1M x 36-bit Fast page mode CMOS DRAM module consisting of eight HY514400A in 20/26 pin SOJ and four HY531000A in 20/26 pin SOJ on a 72 pin glass-epoxy printed circuit board, 0.22 iFdecoupling
|
OCR Scan
|
PDF
|
36-bit
HYM536100Ais
HY514400A
HY531000A
HYM536100AM/ALM
HYM536100AMG/ALMG
1CC04-00-MAYW
HYM536100A
1CC04-00-MAY93
HYM5361
HYM536100AMG
hym536100
|
Untitled
Abstract: No abstract text available
Text: “H YU N D A I HYM536120A W-Series 1M x 36-bit CMOS DRAM MODULE DESCRIPTION The HYM536120A is a 1M x 36-bit Fast page m ode CMOS DRAM m odule consisting of two HY5118160B in 42/42 pin SOJ and four HY531000A in 20/26 pin SOJ on a 72 pin glass-epoxy printed circuit board. 0.22nFdecoupling
|
OCR Scan
|
PDF
|
HYM536120A
36-bit
HY5118160B
HY531000A
22nFdecoupling
HYM536120AW/ALW
HYM536120AWG/ALWG
DQ0-DQ35)
|
HYM536100A
Abstract: No abstract text available
Text: H Y U ND A I HYM536100A Series SEMICONDUCTOR 1M x 36-bit CMOS DRAM MODULE PRELIMINARY DESCRIPTION The HYM536100A is a 1M x 36-bit Fast page mode CMOS DRAM module consisting of eight HY514400A in 20/26 pin SOJ and four HY531000A in 20/26 pin SOJ on a 72 pin glass-epoxy printed circuit board. 0.22p.F decoupling
|
OCR Scan
|
PDF
|
HYM536100A
36-bit
HY514400A
HY531000A
HYM536100AM/ALM
HYM536100AMG/ALMG
132-OmW
DGG20b4
|
Untitled
Abstract: No abstract text available
Text: HYM536100A M-Series •HYUNDAI 1M X 36-bH CMOS DRAM MODULE DESCRIPTION The HYM536100A is a 1M x 36-bit Fast page mode CMOS DRAM module consisting of eight HY514400A in 20/26 pin SOJ and four HY531000A in 20/26 pin SOJ on a 72 pin glass-epoxy printed circuit board. 0.22^F decoupling
|
OCR Scan
|
PDF
|
HYM536100A
36-bH
36-bit
HY514400A
HY531000A
HYM536100AM/ALM
HYM536100AMG/ALMG
DQ0-DQ35)
|
HY5118160
Abstract: No abstract text available
Text: •HYUNDAI H Y M 536123 X-Series 1M x 36-bit CMOS DRAM MODULE DESCRIPTION The HYM536123 is a 1M x 36-bit Fast page mode CMOS DRAM module consisting of two HY5118160 in 42/42 pin SOJ or 44/50 pin TSOPII and one HY514403B in 24/26 pin SOJ or TSOPII on a 72 pin glass-epoxy printed circuit
|
OCR Scan
|
PDF
|
36-bit
HYM536123
HY5118160
HY514403B
HYM536123X/TX/SLX
HYM536123XG/TXG/SLXG/SLTXG
DQ0-DQ35)
1DC03-10-FEB95
|
HYM536100AM
Abstract: HYM536100AMG C 55GB HYM536100AM60 8ca3 hym536100am hyundai
Text: » H Y U N D A I H Y M 5 3 6 1 0 0 A 1M _ X M - S e r ie s 36-bit CMOS DRAM MODULE DESCRIPTION HyM5361 is a 1M x 36-bit Fast page mode CMOS DRAM module consisting of eight HY514400A in 20/26 pin SOJ and four HY531000A in 20/26 pin SOJ on a72 pin glass-epoxy printed circuit board. 0.22uFdecouDlina
|
OCR Scan
|
PDF
|
HYM536100A
36-bit
HY514400A
HY531000A
22uFdecouDlina
HYM536100AM/ALM
HYM536100AMG/ALMG
1CC04-01-FEB94
HYM536100AM
HYM536100AMG
C 55GB
HYM536100AM60
8ca3
hym536100am hyundai
|
Untitled
Abstract: No abstract text available
Text: -HYUNDAI H Y M 5 3 6 1 0 0 A M -S e r ie s I M l 36-blt CMOS DRAM MODULE DESCRIPTION The HYM536100A is a 1M x 36-bit Fast page mode CMOS DRAM module consisting of eight HY514400A in 20/26 pin SOJ and four HY531000A in 20/26 pin SOJ on a 72 pin glass-epoxy printed circuit board. 0.22fiF decoupling
|
OCR Scan
|
PDF
|
36-blt
HYM536100A
36-bit
HY514400A
HY531000A
22fiF
HYM536100AM/ALM
HYM536100AMG/ALMG
1CC04-01-FEB94
4b75DÃ
|
HYM536120
Abstract: No abstract text available
Text: -HYUNDAI HYM536120 W-Series 1M x 36-bit CMOS DRAM MODULE DESCraPTION The HYM536120 is a 1M x 36-bit Fast page mode CMOS DRAM module consisting of two HY5118160 in 42/42 pin SOJ and four HY531000A in 20/26 pin SOJ on a 72 pin glass-epoxy printed circuit board. 0.22j»F decoupling
|
OCR Scan
|
PDF
|
HYM536120
36-bit
HY5118160
HY531000A
HYM536120W/LW
HYM536120WG/LWG
DQ0-DQ35)
DDGSS34
|
HYM536100AM
Abstract: No abstract text available
Text: » H Y U N D A I H Y M 5 3 6 1 A M - S e r i e s 1M x 36-bit CMOS DRAM MODULE DESCRIPTION The HYM5361OOA is a 1M x 36-bit Fast page mode CMOS DRAM module consisting of eight HY514400A in 20/26 pin SOJ and four HY531OOOA in 20/26 pin SOJ on a 72 pin glass-epoxy printed circuit board. 0.22nFdecoupling
|
OCR Scan
|
PDF
|
36-bit
HYM5361OOA
HY514400A
HY531OOOA
22nFdecoupling
HYM536100AM/ALM
HYM5361OOAMG/ALMG
DQ0-DQ35)
1CC04-01-FEB94
HYM536100AM
|
HYM536100
Abstract: HYM536100M HYM536100MG HY531000 sIMM 72 module
Text: •HYUNDAI SEMICONDUCTOR HYM536100 Series 1M x 36-blt CMOS DRAM MODULE DESCRIPTION The HYM536100 Is a 1M x 36-bit Fast page mode CMOS DRAM module consisting of eight HY514400 and four HY531000 in 20/26 pin SOJ on a 72 pin glass-epoxy printed circuit board. 0 .22/ i F decoupling capacitor is mounted
|
OCR Scan
|
PDF
|
HYM536100
36-blt
36-bit
HY514400
HY531000
HYM536100M
HYM536100MG
1CC02-10-M
sIMM 72 module
|
HYM536120WG70
Abstract: HYM536120W70 HYM536120 HY5118160
Text: H Y M 5 3 6 1 2 0 W - S e r ie s IM I 36-bit CMOS DRAM MODULE - H Y U N D A I DESCRIPTION The HYM536120 is a 1M x 36-bit Fast page mode CMOS DRAM module consisting of two HY5118160 in 42/42 pin SOJ and four HY531000A in 20/26 pin SQJ on a 72 pin glass-epoxy printed circuit board. 0.22nF decoupling
|
OCR Scan
|
PDF
|
HYM536120
36-bit
HYM536120
HY5118160
HY531000A
HYM536120W/LW
HYM536120WG/LWG
004f1
17WIN.
HYM536120WG70
HYM536120W70
|
|
HY5118160
Abstract: HYM536120 HYM5361 oec94 HYM53
Text: •HYUNDAI HYM536120 W-Series 1M X 36-bit CMOS DRAM MODULE DESCRIPTION The HYM536120 is a 1M x 36-bit Fast page mode CMOS DRAM module consisting of two HY5118160 in 42/42 pin SOJ and four HY531000A in 20/26 pin SOJ on a 72 pin glass-epoxy printed circuit board. 0.22|iF decoupling
|
OCR Scan
|
PDF
|
HYM536120
36-bit
HY5118160
HY531000A
HYM536120W/LW
HYM536120WG/LWG
DQ0-DQ35)
1CC11-11-DEC94
HYM5361
oec94
HYM53
|
HY5118160
Abstract: hy5118160b 085016 HY531000
Text: “H Y U N D A I H Y M 53 612 0A W -S e r ie s _ 1M x 36-bit CMOS DRAM MODULE DESCRIPTION The HYM536120A is a lM x 36-bit Fast page mode CMOS DRAM module consisting of two HY5118160B in 42/42 pin SOJ and four HY531000A in 20/26 pin SOJ on a 72 pin glass-epoxy printed circuit board. 0.22 xF decoupling
|
OCR Scan
|
PDF
|
HYM536120A
36-bit
HY5118160B
HY531000A
HYM536120AW/ALW
HYM536120AWG/ALWG
250f6
3171MIN
HY5118160
085016
HY531000
|
HYM532814
Abstract: HY531000AJ HYM532224 hy5118160bjc HYM532214AE60 HY5118160 HYM536A814BM HYM536100AM HY51178048J HY5118160JC
Text: QUICK REFERENCE SIMM MODULE 5V SIMM TYPE SIZE 72 Pin 4MB DESCRIPTION 1M X 32 8 IM M 1Mx36 8M B 2M 2M 16MB 4M 4M 32M B 8M 8M NO TE : 4 X X X X X X 32 36 32 36 32 36 PART NO. SPEED REF. DEVICE USED HEIGHT EDO, S L HYM532124AW/ATW 60/70/80 IK HY5118164BUC/BTC x 2
|
OCR Scan
|
PDF
|
HYM532124AW/ATW
532100AM
HYM532120W/TW
HYMS32120AW/ATW
HY5118164BUC/BTC
HY514400AJ
HY5118160JC/TC
HY5118160BJC/BTC
HY531000AJ
HYM532814
HYM532224
hy5118160bjc
HYM532214AE60
HY5118160
HYM536A814BM
HYM536100AM
HY51178048J
HY5118160JC
|
HYM532814
Abstract: TRA8 L HYM536410 HYM532100AM HYM532100
Text: TIMING DIAGRAM INDEX E D O 4-Byte SIMM HYM532124AW HYM532224AW . . . . . . 1Mx32 EDO 2Mx32 EDO 2Mx32 EDO 1Mx 16 based . . . . . 1Mx 16 based . . . . . 2Mx8 based . . . . . EDO TIMING DIAGRAM -1 EDO TIMING DIAGRAM -1 . .
|
OCR Scan
|
PDF
|
HYM532124AW
HYM532224AW
HYM532224AE
HYM532214AE
HYM532414AM
HYM532414BM
1Mx32
2Mx32
HYM532814
TRA8 L
HYM536410
HYM532100AM
HYM532100
|
HYM536100AM
Abstract: HYM532814 4Mx4 dram simm HYM532100AM 1MX32 HYM532120W HYM532224 HYM536410 HYM536410AM HYM532200AM
Text: TABLE OF CONTENTS 1. INDEX 1 Table of C ontents. 2. PRODUCT QUICK GUIDE Ordering In fo rm atio n . Quick Reference . How and What to know as reading Part No.
|
OCR Scan
|
PDF
|
HYM532124AW
HYM532224AW
HYM532224AE
HYM532214AE
HYM532414AM
HYM532414BM
HYM536A414AM
HYM536A414BM
HYM532814AM
HYM532814BM
HYM536100AM
HYM532814
4Mx4 dram simm
HYM532100AM
1MX32
HYM532120W
HYM532224
HYM536410
HYM536410AM
HYM532200AM
|
st z7m
Abstract: SO DIMM 72-pin C5401 PI-33
Text: TIMING DIAGRAM INDEX DRAM MODULE 3.3V DIMM TYPE SIZE 8-Byta 8MB DESCRIPTION 1M X 64 EDO, SL DIMM 168 Pin FPM, SL 1M X 72 FPM, SL FPM, SL, ECC 16MB 2M X 64 EDO, SL FPM, SL 2M 32MB X 72 FPM, SL, ECC 4M X 64 EDO, SL FPM, SL 4M X 72 EDO, SL, ECC FPM, SL, ECC
|
OCR Scan
|
PDF
|
HYM5V64104AX/ATX
HYM5V64124AX/ATX
HYMSV64100AN/ATN
HYMSV641OOAX/ATX
1WCHQ11
1CWU351,
st z7m
SO DIMM 72-pin
C5401
PI-33
|
Hyundai 2MX32 EDO simm module
Abstract: HYM532814 HYM53681 HYM5V72A3204
Text: «HYUNDAI QUICK REFERENCE MODE ORGANIZATION 8M Bytes 2Mx32 BASE PART NO. SPEED R£F. 1Mx16 HYM532224AW/AWG 60/70/80 1K 5V HYM532224CW/CWG 6G/7Q/80 1K 5V HYM532214AE/AEG 60/70/80 2K 5V EDO 2Mx8 FP 4Mx32 EDO VOLT. AVAIL. HYM532214CE/CEG 60/70/80 2K 5V HYM53241OAM/AMG
|
OCR Scan
|
PDF
|
1Mx16
2Mx32
HYM532224AW/AWG
HYM532224CW/CWG
HYM532214AE/AEG
HYM532214CE/CEG
6G/7Q/80
HYM53241OAM/AMG
HYM53241OCM/CMG
4Mx32
Hyundai 2MX32 EDO simm module
HYM532814
HYM53681
HYM5V72A3204
|
HY5118160JC
Abstract: HY531000AJ HY-53 HYM591000B HYM536100AM HYM532120W
Text: As of ’96.3Q TYPE SIZE 30 Pin 1MB SIMM DESCRIPTION. PART NO. SPEEp- R EF. D EV ICE U S E D 1M <8 FPM ,L HYM581000BM 50/60/70 IK HY514400AJ x 2 1M <9 FPM ,L HYM591000BM 60/70 IK HY514400AJX2 4M <8 FPM ,L HYM584000AM 50/60/70 IK HY514100AJ x 8 FPM .SL HYM584000DM
|
OCR Scan
|
PDF
|
HYM581000BM
HYM591000BM
SPEEp50/60/70
HY514400AJ
HY514400AJX2
HY531000AJX1
HYM584000AM
HYM584000DM
HYM594000AM
HYM594000DM
HY5118160JC
HY531000AJ
HY-53
HYM591000B
HYM536100AM
HYM532120W
|
d 100 d
Abstract: Y514100A HYM532220
Text: QUICK REFERENCE D R A M M O D U L E Q U IC K R E F E R E N C E 3.3V DIMM TYPE S IZ E 8-B yte 8MB D E S C R IP T IO N 1M X 64 P A R T NO. EDO, SL HYM5V64104AX/ATX FPM, SL HYM5V64100AN/ATN SPEED 60/70/80 1K HY51V18164BJ/BT X 4 D, 1.00" 1K HY51V4400BJ/BT D, 1.00"
|
OCR Scan
|
PDF
|
HYM5V64104AX/ATX
HYM5V64124AX/ATX
HYM5V64100AN/ATN
HYM5V64100AX/ATX
HYM5V64120AX/ATX
HYMSV72103AN/ATN
HYM5V72A100ATN
HYM5V72A120ATX
HY51V16164B
HY51V18164BJ/BT
d 100 d
Y514100A
HYM532220
|