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    BUK426-50A

    Abstract: BUK426 BUK426-50B
    Text: N AMER P H I L IP S/ DI SC RE TE ESE D bbSBTBl 0G202M0 T BUK426-50A BUK426-50B PowerMOS transistor r ~ 3 * 7 -1 / GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full pack envelope. The device is intended for use in


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    PDF 0G202M0 BUK426-50A BUK426-50B BUK426 OT-199;