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    Text: HY51V16400A Series HYUNDAI 4M X 4-bit CMOS DRAM DESCRIPTION The HY51V16400A is the new generation and fast dynamic RAM organized 4,194,304 x 4-bit. The HY51V16400A utilizes Hyundai's CMOS silicon gate process technology as well as advanced circuit techniques to provide wide


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    HY51V16400A HY51V16400A HY51V16400Ato 4b75Dfifl 1AD31-00-MAY95 0QG441D HY51V16400AJ HY51V16400ASU PDF