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    Untitled

    Abstract: No abstract text available
    Text: HYM5V72A400A N-Series 4Mx72-bit CMOS DRAM MODULE DESCRIPTION The HYM5V72A400A is a 4M x 72-bit Fast page mode CMOS DRAM module consisting of eighteen HY51V16400A in 24/28 pin SOJ or TSOPII and two 16-bit BiCMOS line driver in TSSOP on a 168 pin glass-epoxy printed circuit board. 0.22§ Þdecoupling are mounted for each DRAM. The


    Original     		HYM5V72A400A 4Mx72-bit 72-bit HY51V16400A 16-bit HYM5V72A400ATNG/SLTNG A0-A11 DQ0-DQ71) 1EE12-10-DEC94 PDF

    Untitled

    Abstract: No abstract text available
    Text: HY51V16400A Series HYUNDAI 4M X 4-bit CMOS DRAM DESCRIPTION The HY51V16400A is the new generation and fast dynamic RAM organized 4,194,304 x 4-bit. The HY51V16400A utilizes Hyundai's CMOS silicon gate process technology as well as advanced circuit techniques to provide wide


    OCR Scan     		HY51V16400A HY51V16400A HY51V16400Ato 4b75Dfifl 1AD31-00-MAY95 0QG441D HY51V16400AJ HY51V16400ASU PDF

    Untitled

    Abstract: No abstract text available
    Text: H Y 5 1 V 1 6 4 0 0 A S e r ie s 4M X 4-bit CMOS DRAM »HYUNDAI PRELIMINARY DESCRIPTION The HY51V16400A is the new generation and fast dynamic RAM organized 4,194,304 x 4-bit. The HY51V16400A utilizes Hyundai’s CMOS silicon gate process technology as well as advanced circuit techniques to provide wide


    OCR Scan     		HY51V16400A HY51V16400A HY51V16400Ato 1AD31-00-MAY94 4b750flfl HY51V16400AJ HY51V16400ASLJ HY51V16400AT HY51V16400ASLT PDF

    1DF16-10-JUL9S

    Abstract: No abstract text available
    Text: HY UNDAI HYM5V32400A N-Series 4M X 32-bit CMOS DRAM MODULE DESCRIPTION TTie HYM5V32400A is a 4M x 32-bit Fast page m ode CMOS DRAM m odule consisting of eight HY51V16400A in 24/26 pin SOJ o r TSOPII on a 72 pin glass-epoxy printed circuit board. 0.22nF decoupling capacitor is m ounted


    OCR Scan     		HYM5V32400A 32-bit HY51V16400A HYM5V32400ATN/ASLTN HYM5V32400ATNG/ASLTNG A0-A11) DQO-31) 1DF16-10-JUL95 1DF16-10-JUL9S PDF

    CDQ31

    Abstract: No abstract text available
    Text: HYUNDAI HYM5V64400A N-Series 4M X 64-bit CMOS DRAM MODULE DESCRIPTION The HYM5V64400A is a 4M x 64-bit Fast page mode CMOS DRAM module consisting of sixteen HY51V16400A in 24/28 pin SOJ or TSOP-II and two 16-bit BiCMOS line drivers in TSSOP on a 168 pin glass-epoxy printed circuit


    OCR Scan     		HYM5V64400A 64-bit HY51V16400A 16-bit 22\xF HYM5V64400ANG/ATNG/ASLNG/ASLTNG 1EF14-10-JUL95 CDQ31 PDF

    8500K25

    Abstract: No abstract text available
    Text: • H Y U N D A I HY51V16400A Series 4M X 4-bit CMOS DRAM PRELIMINARY DESCRIPTION The HY51V16400A is the new generation and fast dynamic RAM organized 4,194,304 x 4-bit. The HY51V16400A utilizes Hyundai’s CMOS silicon gate process technology as well as advanced circuit techniques to provide wide


    OCR Scan     		HY51V16400A HY51V16400Ato such300 1AD31-00-MAY94 HY51V16400AJ HY51V16400ASLJ HY51V16400AT 8500K25 PDF

    WC-340

    Abstract: No abstract text available
    Text: -HYUNDAI HY51V16400A Series 4M X 4-bit CMOS DRAM DESCRIPTION The H Y51V16400A is the new generation and fast dynam ic RAM organized 4,194,304 x 4-bit. The HY51V16400A utilizes Hyundai's CM O S silicon gate process technology as well as advanced circuit techniques to provide wide


    OCR Scan     		HY51V16400A Y51V16400A 1AD31-00-MAY95 HY51V16400AJ HY51V16400ASLJ HY51V16400AT HY51V16400ASLT WC-340 PDF

    Untitled

    Abstract: No abstract text available
    Text: «HYUNDAI HY51V17400A, HY51V16400A 4M x 4-bit CMOS DRAM DESCRIPTION ORDERING INFORMATION T his fa m ily is a 16M bit dyn a m ic RAM organized 4,194,304 x 4 -b it configuration w ith Fast Page m ode C M O S DRAM s. Fast Page m ode offers high speed random access o f m em ory cells within the sam e row.


    OCR Scan     		HY51V17400A, HY51V16400A HY51V17400AJ HY51V17400ASLJ HY51V17400AT HY51V17400ASLT HY51V16400AJ HY51V16400ASLJ HY51V16400AT HY51V16400ASLT PDF

    Untitled

    Abstract: No abstract text available
    Text: HYUNDAI HYM5V72A400A N-Series 4M X 72-bit CMOS DRAM MODULE DESCRIPTION The HYM5V72A400A is a 4M x 72-bit Fast page mode CMOS DRAM module consisting of eighteen HY51V16400A in 24/28 pin TSOP-II and two 16-bit BiCMOS line drivers in TSSOP on a 168 pin glass-epoxy printed circuit board


    OCR Scan     		HYM5V72A400A 72-bit HY51V16400A 16-bit HVM5V72A400ATNG/SLTNG A0-A11 DQ0-DQ71) 1EE12-10-DEC94 PDF

    RQW 130

    Abstract: A10q
    Text: HY51V16400A Series •HYUNDAI 4M X 4-bit CM OS DRAM DESCRIPTION The HY51V16400A is the new generation and fast dynam ic RAM organized 4,194,304 x 4-bit. The HY51V16400A utilizes Hyundai's CM O S silicon gate process technology as well as advanced circuit techniques to provide wide


    OCR Scan     		HY51V16400A V16400Ato 4b75D6fi 0QD441Q 1AD31-00-MAY95 HY51V16400AJ HY51V16400ASU RQW 130 A10q PDF

    153 SP-J

    Abstract: No abstract text available
    Text: « « Y U IID A I HYM5V72A400A N-Series 4Mx72-bìt CMOS DRAM MODULE DESCRIPTION The HYM5V72A400A is a 4M x 72-bit Fast page mode CMOS DRAM module consisting of eighteen HY51V16400A in 24/28 pin SOJ or TSOPII and two 16-bit BiCMOS line driver in TSSOP on a 166 pin


    OCR Scan     		HYM5V72A400A 4Mx72-b 72-bit HY51V16400A 16-bit 22nFdecoupling HYM5V72A400ATNG/SLTNG DQQ-DQ71) 0-DEC94 153 SP-J PDF

    Untitled

    Abstract: No abstract text available
    Text: H Y 5 1 V 16 4 1 O A S e r ie s “HYUNDAI 4M X 4-bit CMOS DRAM with WPB PRELIMINARY DESCRIPTION The HY51V16410A is the new generation and fast dynamic RAM organized 4,194,304 x 4-bit. The HY51V16410A utilizes Hyundai’s CMOS silicon gate process technology as well as advanced circuit techniques to provide wide


    OCR Scan     		HY51V16410A HY51V1641 D32-00-MAY94 4b75Dflfl HY51V16410AJC HY51V16410ASLJC HY51V16410ATC HY51V16410ASLTC PDF

    BEDO RAM

    Abstract: hy5118160b HY512264 HY5117404 HY5118164B
    Text: TABLE OF CONTENTS •H Y U N D A I 1. TABLE OF CONTENTS Index . 1 2. PRODUCT QUICK REFERENCE GUIDE


    OCR Scan     		HY531000A. HY534256A. 16-bit. HY5216257. x16-bit. DB101-20-MAY95 BEDO RAM hy5118160b HY512264 HY5117404 HY5118164B PDF

    HYM5V64414

    Abstract: No abstract text available
    Text: As of ’96.3Q TYPE SIZE 8 -Byte 8M B DESCRIPTION. 1M x 64 EDO.SL D IM M PART HO. HYM5V64104AR/ATR SPEED REF. 60/70/80 4K H Y 51 V I6164BJ/BT x 4 IK HY51V18164BJ/BT x 4 IK HY51V18164BJ/BT x 4 HYM5V64124AR/ATR 1M x 72 Unbuffered EDO,SL,ECC HYM5V72A124AR/ATR


    OCR Scan     		HYM5V64104AR/ATR HYM5V64124AR/ATR HYM5V72A124AR/ATR HYM5V64204AR/ATR HYM5V64214AF/ATF HYM5V64224AR/ATR I6164BJ/BT HY51V18164BJ/BT HY51V4404BJ/BT HYM5V64414 PDF

    HY514260

    Abstract: HY5117404A 164-04A 4m 300mil
    Text: I' PRODUCT AVAILABILITY DRAM PRODUCT 1Mbit 2M bit 4Mbit DESCRIPTION PACKAGE OPTION ACCESS TIME ns - As of '96.3Q OPERATI!« CURRENT (mA,MAX) STA»IDBY CURI*ENT (rtiA, MAX) TTL CMOS AVAILABILITY 1M x 1 F a s t Pa ge HY531000A SOJ 60/7 0/80 85/7 5/65 2 1


    OCR Scan     		HY531000A HY534256A 256KX8 HY512800 HY512264 HY5120 6404A HY5116404B HY51V16404A HY51V16404B HY514260 HY5117404A 164-04A 4m 300mil PDF

    r4kf

    Abstract: HY53C464LS fr4k HY53C256LS HY531000J
    Text: «HYUNDAI QUICK REFERENCE DRAM ORGANIZATION PARTNUMBER SPEEDfiw FEATURES PACKAGE 256K bit 256Kx 1) HY53C256S HY53C256LS HY53C256F HY53C256LF HY53C464S HY53C464LS HY53C464F HY53C464LF HY531000S HY531000J HY531000AS HY531000ALS HY531000AJ HY531000AU HY534256S


    OCR Scan     		256Kx 64Kx4) HY53C256S HY53C256LS HY53C256F HY53C256LF HY53C464S HY53C464LS HY53C464F HY53C464LF r4kf fr4k HY531000J PDF

    AUO-PL321.60

    Abstract: HY51V18164B HY514264 HY514260
    Text: -HYUNDAI QUICK REFERENCE GUIDE DRAM ORDERING INFORMATION ORGANIZATION 1M bit 1Mx1 PART NUMBER HY531000AS HY531000ALS HY531000AJ HY531000ALJ SPEED(ns) 60/70/80 60/70/80 60/70/80 60/70/80 FEATURES F/P F/P, L-part F/P F/P, L-part PACKAGE 1Spin PDIP 18pin PDIP


    OCR Scan     		HY531000AS HY531000ALS HY531000AJ HY531000ALJ HY534256AS HY534256ALS HY534256AJ HY534256ALJ HY512260JC HY512260LJC AUO-PL321.60 HY51V18164B HY514264 HY514260 PDF

    HY5118160

    Abstract: 256K 4bit DRAM HY514260 HY51426 HY51V16100 HY531000 4K x 1 DRAM 256k 8bit 512k 4bit
    Text: “HYUNDAI 1. TABLE OF CONTENTS TABLE OF CONTENTS 2. PRODUCT QUICK REFERENCE GUIDE


    OCR Scan     		256K-bits HY53C256. HY53C464 HY531000. DB101-20-MAY94 HY5118160 256K 4bit DRAM HY514260 HY51426 HY51V16100 HY531000 4K x 1 DRAM 256k 8bit 512k 4bit PDF

    HY51V18164

    Abstract: HY5118164 HY514260 HY51V65400 HY51V17804CJ
    Text: «HYUNDAI DRAM ORDERING INFORMATION ORGANIZATION 1M bit 256Kx4 2M bit (256x8) 2M bit (128Kx16) 4M bit (4Mx1) 4M bit (1 Mx4) Note : FP PART NUMBER HY534256AJ HY534256ALJ HY512800J HY512800LJ HY512800SLJ HY512264JC HY512264LJC HY512264SLJC HY512264TC HY512264LTC


    OCR Scan     		256Kx4) 256x8) 128Kx16) HY534256AJ HY534256ALJ HY512800J HY512800LJ HY512800SLJ HY512264JC HY512264LJC HY51V18164 HY5118164 HY514260 HY51V65400 HY51V17804CJ PDF

    d 100 d

    Abstract: Y514100A HYM532220
    Text: QUICK REFERENCE D R A M M O D U L E Q U IC K R E F E R E N C E 3.3V DIMM TYPE S IZ E 8-B yte 8MB D E S C R IP T IO N 1M X 64 P A R T NO. EDO, SL HYM5V64104AX/ATX FPM, SL HYM5V64100AN/ATN SPEED 60/70/80 1K HY51V18164BJ/BT X 4 D, 1.00" 1K HY51V4400BJ/BT D, 1.00"


    OCR Scan     		HYM5V64104AX/ATX HYM5V64124AX/ATX HYM5V64100AN/ATN HYM5V64100AX/ATX HYM5V64120AX/ATX HYMSV72103AN/ATN HYM5V72A100ATN HYM5V72A120ATX HY51V16164B HY51V18164BJ/BT d 100 d Y514100A HYM532220 PDF

    Untitled

    Abstract: No abstract text available
    Text: • H jjjH DRAM MODULE 5V SIMM TYPE SIZE 72 Pin 32MB As of '96.3Q DESCRIPTION. 8M X 32 SIM M 8M X 36 K PART NO. SPEED REF. DEVICE USED EDO.SL H Y M 532814A M /A T M 6 0 /7 0 /8 0 2K HY5117404AJ/AT x 16 FPM.SL H Y M 532810A M /A T M 5 0 /6 0 /7 0 2K HY5117400AJ/AT x 16


    OCR Scan     		32814A 32810A 536A804AM HYM536A814AM 36810A HY5117404AJ/AT HY5117400AJ/AT HY5116404AJ HY5117404AJ PDF