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    A2757

    Abstract: pj 66 diode SSH70N10A 1633 MOSFET
    Text: A d van ced Power MOSFET S S H 7 0 N 1 0 A FEATURES = 100 V b v dss • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ^DS on = ■ Lower Input Capacitance lD = 70 A ■ Improved Gate Charge ■ Extended Safe Operating Area ■ 175°C Operating Temperature


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    SSH70N10A 0QMD315 O-220-F-4L DD3b33E 003b333 A2757 pj 66 diode SSH70N10A 1633 MOSFET PDF