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    1 GATE TOSHIBA LOGIC Search Results

    1 GATE TOSHIBA LOGIC Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TB67H481FTG Toshiba Electronic Devices & Storage Corporation Stepping and Brushed Motor Driver /Bipolar Type / Vout(V)=50 / Iout(A)=3.0 / IN input type / VQFN32 Visit Toshiba Electronic Devices & Storage Corporation
    DCL541A01 Toshiba Electronic Devices & Storage Corporation Digital Isolator / VDD=2.25~5.5V / 150Mbps / 4 channel(F:R=3:1) / Default Output Logic: Low / Input disable Visit Toshiba Electronic Devices & Storage Corporation
    DCL542H01 Toshiba Electronic Devices & Storage Corporation Digital Isolator / VDD=2.25~5.5V / 150Mbps / 4 channel(F:R=2:2) / Default Output Logic: High / Output enable Visit Toshiba Electronic Devices & Storage Corporation
    DCL541B01 Toshiba Electronic Devices & Storage Corporation Digital Isolator / VDD=2.25~5.5V / 150Mbps / 4 channel(F:R=3:1) / Default Output Logic: High / Input disable Visit Toshiba Electronic Devices & Storage Corporation
    DCL542L01 Toshiba Electronic Devices & Storage Corporation Digital Isolator / VDD=2.25~5.5V / 150Mbps / 4 channel(F:R=2:2) / Default Output Logic: Low / Output enable Visit Toshiba Electronic Devices & Storage Corporation

    1 GATE TOSHIBA LOGIC Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    40 t 1202 igbt

    Abstract: JTS 4PIN 1042a1
    Text: TOSHIBA TF1205 TOSHIBA SOLID STATE IGBT GATE DRIVER MODULE T F 1 1 f l ^ Unit in mm ÏÏTOT- TOSHIBA TF1205 is the IGBT gate driver designed fo r use w ith TOSHIBA Insulated Gate Bipolar Transistor M odule and it includes the optical isolator and IGBT gate driver


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    TF1205 TF1205 40 t 1202 igbt JTS 4PIN 1042a1 PDF

    IGBT K 40 T 1202

    Abstract: 40 t 1202 igbt
    Text: TOSHIBA TF1206 TOSHIBA SOLID STATE IGBT GATE DRIVER MODULE T F 1 ? fl f i TOSHIBA TF1206 is the IGBT gate driver designed for use U nit in mm ÏÏTOT- with TOSHIBA Insulated Gate Bipolar Transistor Module and it includes the optical isolator and IGBT gate driver


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    TF1206 TF1206 10-42A1A IGBT K 40 T 1202 40 t 1202 igbt PDF

    Untitled

    Abstract: No abstract text available
    Text: TO SH IBA TF1206 TOSHIBA SOLID STATE IGBT GATE DRIVER MODULE T F 1 206 Unit in mm TOSHIBA TF1206 is the IGBT gate driver designed for use with TOSHIBA Insulated Gate Bipolar Transistor Module and it includes the optical isolator and IGBT gate driver circuit. Using this driver, you can design high reliability


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    TF1206 TF1206 ----15V PDF

    Untitled

    Abstract: No abstract text available
    Text: INTEGRATED TOSHIBA CIRCUIT TECHNICAL TOSHIBA CM O S DIGITAL INTEGRATED CIRCUIT T C 7 4 A C 1 1 P/F/FN DATA SILICON MONOLITHIC TRIPLE 3 -INPUT AND GATE The TC74AC11 is an advanced high speed CMOS 3-INPUT AND GATE fabricated with silicon gate and double - layer


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    TC74AC11 14PIN 14PIN 200mil 150mil TCH754fl PDF

    TC7SL02

    Abstract: TC7SL02F TC7SL02FU
    Text: TOSHIBA TC7SL02F/FU TOSHIBA CMOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC TC7SL02F, TC7SL02FU 2-INPUT NOR GATE The TC7SL02 is a low voltage operative C2MOS 2-INPUT NOR GATE fabricated with silicon gate C2MOS technology. Operating voltage Vcc (opr 's 1~3V equivalent to 1pc


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    TC7SL02F/FU TC7SL02F, TC7SL02FU TC7SL02 TC7SL02F TC7SL02F TC7SL02FU PDF

    16PIN

    Abstract: 74LS133 TC74HC133AF TC74HC133AP
    Text: TOSHIBA TC74HC133AP/AF TOSHIBA CMOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC TC74HC133AP, TC74HC133AF 1 3 -IN PU T NAND GATE The TC74HC133A is a high speed CMOS 13-INPUT NAND GATE fabricated with silicon gate C2MOS technology. It achieves the high speed operation similar to equivalent


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    TC74HC133AP/AF TC74HC133AP, TC74HC133AF 13-INPUT TC74HC133A 16PIN DIP16-P-300-2 75MAX 74LS133 TC74HC133AF TC74HC133AP PDF

    TC7SL00

    Abstract: TC7SL00F TC7SL00FU
    Text: TOSHIBA TC7SL00F/FU TOSHIBA CMOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC TC7SL00F, TC7SL00FU 2-INPUT NAND GATE The TC7SL00 is a low voltage operative C2MOS 2-INPUT NAND GATE fabricated with silicon gate C2MOS technology. Operating voltage Vcc (opr 's 1~3V equivalent to 1pc


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    TC7SL00F/FU TC7SL00F, TC7SL00FU TC7SL00 TC7SL00F TC7SL00F TC7SL00FU PDF

    TC7SL02F

    Abstract: TC7SL02FU TC7SL32 TC7SL32F TC7SL32FU
    Text: TOSHIBA TC7SL32F/FU TOSHIBA CMOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC TC7SL32F, TC7SL32FU 2-INPUT OR GATE The TC7SL32 is a low voltage operative C2MOS 2-INPUT OR GATE fabricated with silicon gate C2MOS technology. Operating voltage V ( x (o p r ) 's 1~3V equivalent to 1pc


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    TC7SL32F/FU TC7SL32F, TC7SL32FU TC7SL32 TC7SL02F TC7SL02FU TC7SL32F TC7SL32FU PDF

    TC7SL02F

    Abstract: TC7SL02FU TC7SL32 TC7SL32F TC7SL32FU
    Text: TOSHIBA TC7SL32F/FU TOSHIBA CMOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC TC7SL32F, TC7SL32FU 2-INPUT OR GATE The TC7SL32 is a low voltage operative C2MOS 2-INPUT OR GATE fabricated with silicon gate C2MOS technology. Operating voltage V ( x (o p r ) 's 1~3V equivalent to 1pc


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    TC7SL32F/FU TC7SL32F, TC7SL32FU TC7SL32 TC7SL02F TC7SL02FU TC7SL32F PDF

    Untitled

    Abstract: No abstract text available
    Text: INTEGRATED TOSHIBA TRIPLE 3 -INPUT CIRCUIT TECHNICAL NAND TOSHIBA CM O S DIGITAL INTEGRATED CIRCUIT DATA T C 7 4 A C 1 OP/F/FN SILICON MONOLITHIC GATE The TC74AC10 is an advanced high speed CMOS 3-INPUT NAND GATE fabricated with silicon gate and double - layer


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    TC74AC10 14PIN 200mil D02T37Ã PDF

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA TC7SL00F/FU TOSHIBA CMOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC TC7SL00F, TC7SL00FU 2-INPUT NAND GATE The TC7SL00 is a low voltage operative C2MOS 2-INPUT NAND GATE fabricated with silicon gate C2MOS technology. Operating voltage V c c (o p r 's 1~3V equivalent to 1pc


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    TC7SL00F/FU TC7SL00F, TC7SL00FU TC7SL00 PDF

    TC7SL02

    Abstract: TC7SL02F TC7SL02FU
    Text: TOSHIBA TC7SL02F/FU TOSHIBA CMOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC TC7SL02F, TC7SL02FU 2-INPUT NOR GATE The TC7SL02 is a low voltage operative C2MOS 2-INPUT NOR GATE fabricated with silicon gate C2MOS technology. Operating voltage V c c (o p r 's 1~3V equivalent to 1pc


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    TC7SL02F/FU TC7SL02F, TC7SL02FU TC7SL02 TC7SL02F PDF

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA TC7SL00F/FU TOSHIBA CMOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC TC7SL00F, TC7SL00FU 2-INPUT NAND GATE The TC7SL00 is a low voltage operative C2MOS 2-INPUT NAND GATE fabricated with silicon gate C2MOS technology. Operating voltage V c c (o p r 's 1~3V equivalent to 1pc


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    TC7SL00F/FU TC7SL00F, TC7SL00FU TC7SL00 PDF

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA TC7SL08F/FU TOSHIBA CMOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC TC7SL08F, TC7SL08FU 2-INPUT AND GATE The TC7SL08 is a low voltage operative C2MOS 2-INPUT AND GATE fabricated with silicon gate C2MOS technology. Operating voltage V c c (o p r 's 1~3V equivalent to 1pc


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    TC7SL08F/FU TC7SL08F, TC7SL08FU TC7SL08 PDF

    ITT 7

    Abstract: No abstract text available
    Text: TOSHIBA TC7SL08F/FU TOSHIBA CMOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC TC7SL08F, TC7SL08FU 2-INPUT AND GATE The TC7SL08 is a low voltage operative C2MOS 2-INPUT AND GATE fabricated with silicon gate C2MOS technology. Operating voltage V c c (o p r 's 1~3V equivalent to 1pc


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    TC7SL08F/FU TC7SL08F, TC7SL08FU TC7SL08 ITT 7 PDF

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA TC4S01F TOSHIBA CMOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC T• r j ■<WÊÊF; nW 1■ ■f 2 INPUT NOR GATE The TC4S01F is 2-input positive logic NOR gates. Gate output with inverter buffer improve the inputoutput characteristics and even if the load capacitance


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    TC4S01F TC4S01F PDF

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA T6L12 TENTATIVE TOSHIBA CMOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC T fi I 1 ? • m GATE DRIVER FOR TFT LCD PANELS The T6L12 is a 256-channel output gate driver for TFT LCD panels. Since this device accepts external input of


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    T6L12 T6L12 256-channel 300pF PDF

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA TC4S71F TOSHIBA CMOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC T r a<;7 1 F • ■ wê ê f m m m 2 INPUT OR GATE The TC4S71F is 2-input positive logic OR gates. Gate output with inverter buffer improve the inputoutput characteristics and even if the load capacitance


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    TC4S71F TC4S71F 200CTRICAL PDF

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA TC55V2161 FT-85,-10.-85L.-1 OL TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 131,072-WORD BY 16-BIT STATIC RAM DESCRIPTION The TC55V2161FT is a 2,097,152-bit static random access memory SRAM organized as 131,072 words by 16 bits. Fabricated using Toshiba’s CMOS Silicon gate process technology, this device operates from a single 2.7


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    TC55V2161 FT-85 072-WORD 16-BIT TC55V2161FT 152-bit -85L-1 44-P-400-0 PDF

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA TC554161 FTI-85L,-1 OL TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 262,144-WORD BY 16-BIT STATIC RAM DESCRIPTION The TC554161FTI is a 4,194,304-bit static random access memory SRAM organized as 262,144 words by 16 bits. Fabricated using Toshiba’s CMOS Silicon gate process technology, this device operates from a single 5 V


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    TC554161 FTI-85L 144-WORD 16-BIT TC554161FTI 304-bit 54-P-400-0 62MAX PDF

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA TC4SU11F TOSHIBA CMOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC Tfd<;iii 1 F • ■ ■ W ÊF ■ ■ 2 INPUT NAND GATE TC4SU11F is 2 input NAND gate respectively. The internal circuit of only basic NAND circuit without the waveform shaping inverter.


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    TC4SU11F TC4SU11F PDF

    TC51V16160

    Abstract: No abstract text available
    Text: TOSHIBA TC51V 1 6160CJ/CFT-50,-60 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 1,048,576-WORD x 16-BIT FAST PAGE DYNAMIC RAM DESCRIPTION The TC51V16160CJ/CFT is a fast page dynamic RAM organized as 1,048,576 words by 16 bits. The TC51V16160CJ/CFT utilizes TOSHIBA’S CMOS silicon gate process technology as well as advanced


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    TC51V 6160CJ/CFT-50 576-WORD 16-BIT TC51V16160CJ/CFT 42-pin 50-pin TC51V16160 PDF

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA TC554161 FTL-70L,-85L,-1 OL TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 262,144-WORD BY 16-BIT STATIC RAM DESCRIPTION The TC554161FTL is a 4,194,304-bit static random access memory SRAM organized as 262,144 words by 16 bits. Fabricated using Toshiba’s CMOS Silicon gate process technology, this device operates from a single 5 V


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    144-WORD 16-BIT TC554161 FTL-70L TC554161FTL 304-bit 54-P-400-0 62MAX PDF

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA TC55V1001 F/FT/TR/ST/SR-85L,-1 OL TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 131,072-WORD BY 8-BIT STATIC RAM DESCRIPTION The TC55V1001F/FT/TR/ST/SR is a 1,048,576-bit static random access memory SRAM organized as 131,072 words by 8 bits. Fabricated using Toshiba’s CMOS Silicon gate process technology, this device operates from a


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    072-WORD TC55V1001 F/FT/TR/ST/SR-85L TC55V1001F/FT/TR/ST/SR 576-bit 32-P-0820-0 32-P-0 PDF