1 M x 4-Bit Dynamic RAM
Abstract: 514400BJ
Text: 1 M x 4-Bit Dynamic RAM Low Power 1 M x 4-Bit Dynamic RAM HYB 514400BJ/BJL -50/-60/-70 Advanced Information • • • • • • • • • • • • • 1 048 576 words by 4-bit organization 0 to 70 ˚C operating temperature Fast Page Mode Operation
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Original
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514400BJ/BJL
GPJ05627
P-SOJ-26/20-5
1 M x 4-Bit Dynamic RAM
514400BJ
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Untitled
Abstract: No abstract text available
Text: MEMORY CMOS 4 x 1 M x 16 BIT SYNCHRONOUS DYNAMIC RAM M B81F641642B-103E/-103/-10/-103L/-1OL CMOS 4-Bank x 1,048,576-Word x 16 Bit Synchronous Dynamic Random Access Memory • DESCRIPTION The Fujitsu MB81F641642B is a CMOS Synchronous Dynamic Random Access Memory SDRAM containing
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OCR Scan
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B81F641642B-103E/-103/-10/-103L/-1OL
576-Word
MB81F641642B
16-bit
F641642B
D-63303
F9801
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PDF
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application tca 780
Abstract: MH1M36EJ7
Text: MITSUBISHI LSIs M H 1 M 3 6 E J - 6 , - 7 , - 8 , - 1 37748736-BIT 1048576-WORD BY36-BIT DYNAMIC RAM DESCRIPTION The MH1M36EJ is 1048576word x 36bit dynamic RAM. This consists of four industry standard 1M x 1 dynamic RAMs in TSOP and eight industry standard 1M x 4 dynamic RAMs
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OCR Scan
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37748736-BIT
1048576-WORD
BY36-BIT
MH1M36EJ
1048576word
36bit
MH1M36EJ-
application tca 780
MH1M36EJ7
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Untitled
Abstract: No abstract text available
Text: M ITSU BISHI LSlS M H 1 M 3 2 E J -8 ,-1 0 33554432-BIT 1048576-WORD BY 32-BIT DYNAMIC RAM DESCRIPTION The M H 1M 32E J is 10 4 8 5 7 6 w o rd x 3 2 - bit dynamic RAM. This consists o f eight indu stry standard 1 M x 4 dynamic PIN CONFIGURATION (TOP VIEW)
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OCR Scan
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33554432-BIT
1048576-WORD
32-BIT
MH1M32EJ
1H1M32E
M32EJ-8
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Untitled
Abstract: No abstract text available
Text: MEMORY CMOS 4 x 1 M x 16 BIT SYNCHRONOUS DYNAMIC RAM MB811641642A-1Û0/-84/-67/-100L/-84L/-67L CMOS 4-Bank x 1,048,576-Word x 16 Bit Synchronous Dynamic Random Access Memory • DESCRIPTION The Fujitsu MB811641642A is a CMOS Synchronous Dynamic RandomiiAccess Memory SDRAM containing
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OCR Scan
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MB811641642A-1
0/-84/-67/-100L/-84L/-67L
576-Word
MB811641642A
16-bit
B811641642A
D-63303
F9802
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PDF
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F641642C
Abstract: f64164
Text: MEMORY CMOS 4 x 1 M x 16 BIT SYNCHRONOUS DYNAMIC RAM MB81F641642C-102/-103/-102L/-103L CMOS 4-Bank x 1,048,576-Word x 16 Bit Synchronous Dynamic Random Access Memory DESCRIPTION The Fujitsu MB81F641642C is a CMOS Synchronous Dynamic Random Access,Memory SDRAM containing
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OCR Scan
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MB81F641642C-102/-103/-102L/-103L
576-Word
MB81F641642C
16-bit
F641642C
f64164
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PDF
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M5M44100BJ
Abstract: No abstract text available
Text: MITSUBISHI LSIs MH4M09B0NJ-6,-7,-8/ MH4M09B0JA-6,-7,-8 FAST PAGE MODE 37748736-BIT 4194304-WORD BY 9-BIT DYNAMIC RAM DESCRIPTION The M H 4 M 0 9 B 0 N J /J A is 4 1 9 4 3 0 4 - w ord x 9 - bit dynamic RAM. This consists o f nine industry standard 4M x 1 dynamic
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OCR Scan
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MH4M09B0NJ-6
MH4M09B0JA-6
37748736-BIT
4194304-WORD
MH4M09B0NJ/AJ-6
MH4M09B0NJ/AJ-7
09B0NJ/AJ-8
4194304-WQRD
M5M44100BJ
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Untitled
Abstract: No abstract text available
Text: FUJITSU SEMICONDUCTOR DATA SHEET AE1E MEMORY CMOS 4 x 2 M x 16 BIT SYNCHRONOUS DYNAMIC RAM M B 8 1 F 1 21642-75/-102/-102L CMOS 4-Bank x 2,097,152-Word x 16 Bit Synchronous Dynamic Random Access Memory • DESCRIPTION The Fujitsu MB81F121642 is a CMOS Synchronous Dynamic Random Access Memory SDRAM containing
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OCR Scan
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21642-75/-102/-102L
152-Word
MB81F121642
16-bit
MB81F121642-75/-102/-102L
54-pin
FPT-54P-M02)
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI LSIs MH1M36EJ - 6, - 7, - 8, - 10 37748736-BIT 1048576-WORD BY 3 6 -BIT DYNAMIC RAM DESCRIPTION The MH1M 36EJ is 1048576w ord x 36bit dynamic RAM. This consists of four industry standard 1 M x 1 dynamic RAMs PIN CONF1GURATION(TOP VIEW ) O in TSOP and eight industry standard 1 M x 4 dynamic RAMs
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OCR Scan
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MH1M36EJ
37748736-BIT
1048576-WORD
1048576w
36bit
CX116
MH1M36EJ-
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PDF
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1N15
Abstract: No abstract text available
Text: MEMORY CMOS 4 x 1 M x 16 BIT SYNCHRONOUS DYNAMIC RAM MB81F641642C-102/-103/-102L/-103L CMOS 4-Bank x 1,048,576-Word x 16 Bit Synchronous Dynamic Random Access Memory • DESCRIPTION The Fujitsu MB81F641642C is a CMOS Synchronous Dynamic Random Access Memory SDRAM containing
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OCR Scan
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MB81F641642C-102/-103/-102L/-103L
576-Word
MB81F641642C
16-bit
F9802
1N15
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PDF
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Untitled
Abstract: No abstract text available
Text: MEMORY CMOS 4 x 1 M x 16 BIT SYNCHRONOUS DYNAMIC RAM MB81F641642C-102/-103/-102L/-103L CMOS 4-Bank x 1,048,576-Word x 16 Bit Synchronous Dynamic Random Access Memory • DESCRIPTION The Fujitsu MB81F641642C is a CMOS Synchronous Dynamic Random Access Memory SDRAM containing
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OCR Scan
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MB81F641642C-102/-103/-102L/-103L
576-Word
MB81F641642C
16-bit
54-pin
FPT-54P-M02)
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PDF
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Untitled
Abstract: No abstract text available
Text: MEMORY CMOS 4 x 1 M x 16 BIT SYNCHRONOUS DYNAMIC RAM MB81F641642B-103E/-103/-10/-103L/-1OL CMOS 4-Bank x 1,048,576-Word x 16 Bit Synchronous Dynamic Random Access Memory • DESCRIPTION The Fujitsu MB81F641642B is a CMOS Synchronous Dynamic Random Access Memory SDRAM containing
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OCR Scan
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MB81F641642B-103E/-103/-10/-103L/-1OL
576-Word
MB81F641642B
16-bit
MB81F641642B-103E/-103/-10/-103L/-1
54-pin
FPT-54P-M02)
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PDF
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M5M44100A
Abstract: M5M44100AJ
Text: MITSUBISHI LSIs M H 4 M 0 8 A 0 J - 6 ,-7 ,-8 ,- 1 0 / M H 4 M 0 8 A 0 J A - 6 ,-7 ,-8 , - 1 0 FAST PAGE MODE 4194304-WQRD BY 8-BIT DYNAMIC RAM DESCRIPTION The MH4M08A0J, JA is 4194304 word x 8 bit dynamic RAM and consists of eight industry standard 4M x 1 dynamic
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OCR Scan
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4194304-WQRD
MH4M08A0J,
MH4M08A0J
08A0JA
0J-10
4194304-WORD
MH4M08A0J-6
-10/MH4M08A0JA-6
M5M44100A
M5M44100AJ
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HYB514100
Abstract: No abstract text available
Text: SIEMENS 4 M X 1-Bit Dynamic RAMHYB 514100BJ/BT-60/-70/-80 Low Power 4 M x 1-Bit Dynamic RAM HYB 514100BJL/BTL-60/-70/-80 Advanced Information • 4 194 304 words by 1-bit organization • 0 to 70 'C operating temperature • Fast access and cycle time RAS access time:
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OCR Scan
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514100BJ/BT-60/-70/-80
514100BJL/BTL-60/-70/-80
14100BJ/BT/BJL/BTL-60/-70/-80
HYB514100BJ/BT/BJL/BTL
HYB514100
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1012a
Abstract: No abstract text available
Text: PRELIMINARY C M O S DRAM K M 4 4 C 1012A 1 M X 4 Bit CMOS Dynamic RAM with Static Column Mode Write Per Bit Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung K M 44C 1012A is a high speed CMOS 1 ,0 4 8 ,5 7 6 X 4 Dynamic Random Access Memory. Its
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OCR Scan
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KM44C1012A
KM44C1012AZ
1012a
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PDF
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Untitled
Abstract: No abstract text available
Text: MH1M40BJ-6,-7,-8 MH1 M40BNJ-6,-7,-8 FAST PAGE MODE 41943040-BIT 1048576-WQRD BY 40-BIT DYNAMIC RAM DESCRIPTION The M H 1 M 4 0 B J /B N J is 10 4 8576 -w ord x 4 0 -b it dynamic PIN CONFIGURATION (TOP VIEW) [Single side) ^A M . This consists o f ten industry standard 1 M x 4 dynamic
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OCR Scan
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MH1M40BJ-6
M40BNJ-6
41943040-BIT
1048576-WQRD
40-BIT)
238576-WORD
1048576-WORD
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PDF
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DYNAMIC RAM CROSS REFERENCE
Abstract: No abstract text available
Text: O «—1o * «o‘s MH4M08B0NJ-6,-7,-8/ MH4M08B0JA-6,-7,-8 FAST PAGE MODE 33554432-BIT 4194304-WORD BY 8-BIT DYNAMIC RAM DESCRIPTION PIN CONFIGURATION (TOP VIEW) [Single side] The M H 4 M 0 8 B 0 N J /J A is 4 1 9 4 3 0 4 word x 8 bit dynamic ^A M and consists o f eight industry standard 4M x 1 dynamic
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OCR Scan
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MH4M08B0NJ-6
MH4M08B0JA-6
33554432-BIT
4194304-WORD
DYNAMIC RAM CROSS REFERENCE
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PDF
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DZU 41
Abstract: MB8144
Text: June 1994 Edition 1.0 FUJITSU DATA SHEET M B 8 14400D-60U-70L CMOS 1 M X 4 BIT FAST PAGE MODE DYNAMIC RAM CMOS 1,048,576 x 4 bit Fast Page Mode Dynamic RAM The Fujitsu MB814400D is a fully decoded CMOS Dynamic RAM DRAM that contains 4,194,304 memory cells accessible in 4-bit increments. The MB814400D features a
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OCR Scan
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14400D-60U-70L
MB814400D
024-bits
can00D-70L
JV0037-946J1
DZU 41
MB8144
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PDF
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Untitled
Abstract: No abstract text available
Text: KM41C4000A CMOS DRAM 4 M X 1 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • The Samsung K M 4 1 C 4 0 0 0 A is a high speed CMOS 4 ,1 9 4 ,3 0 4 bit X 1 Dynamic Random A cce ss M em ory. Its design is optimized for high perform ance applications
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KM41C4000A
41C4000A-
130ns
150ns
100ns
18-LEAD
20-LEAD
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PDF
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Untitled
Abstract: No abstract text available
Text: September 1993 Edition 4.1 FUJITSU DATA SHEET M B 8 1 1 6 4 Ö O -6 0 /-7 0 /-8 0 CMOS 4M x 4 BIT FAST PAGE MODE DYNAMIC RAM CMOS 4,194,304 x 4 BIT Fast Page Mode Dynamic RAM The Fujitsu M B8116400 is a fully decoded CMOS Dynamic RAM DRAM that contains 16,777,216
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OCR Scan
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B8116400
MB8116400
10JREF
V32002S-5C
374T7Sb
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PDF
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Untitled
Abstract: No abstract text available
Text: CMOS DRAM KM41C4001A 4 M X 1 Bit CMOS Dynamic RAM with Nibble Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung K M 41C 4001A is a CMOS high speed 4 ,1 9 4 ,3 0 4 bit X 1 Dynamic Random Access Memory, Its design is optimized for high performance applications
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OCR Scan
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KM41C4001A
41C4001
KM41C4001A-1
180ns
18-LEAD
20-LEAD
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PDF
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY KM44C1012A CMOS DRAM 1 M X 4 Bit C M O S Dynamic RAM with Static Column M ode Write P er Bit M ode FEATURES GENERAL DESCRIPTION • Perform ance range: The Samsung K M 4 4 C 1 0 1 2 A is a high speed CMOS 1 ,0 4 8 ,5 7 6 X 4 Dynamic Random A cce ss Mem ory. Its
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OCR Scan
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KM44C1012A
130ns
150ns
100ns
180ns
44C10ead/
44C1012AP
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PDF
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Wo18
Abstract: No abstract text available
Text: SIEMENS 1 M x 4-Bit Dynamic RAM Low Power 1 M x 4-Bit Dynamic RAM HYB 514400BJ/BJL -50/-60/-70 A d va n c ed Info rm ation • 1 048 576 words by 4-bit organization • 0 to 70 'C operating temperature • Fast Page Mode Operation • Performance: -50 -60
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OCR Scan
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514400BJ/BJL
P-SOJ-26/20-5
I-5-10
Wo18
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PDF
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Untitled
Abstract: No abstract text available
Text: SIEMENS 4 M X 1-Bit Dynamic RAM Low Power 4 M x 1-Bit Dynamic RAM HYB 5141OOBJ/BT-60/-70/-80 HYB 514100BJL/BTL-60/-70/-80 Advanced Information • 4 194 304 words by 1-bit organization • 0 to 70 "C operating temperature • Fast access and cycle time RAS access time:
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OCR Scan
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5141OOBJ/BT-60/-70/-80
514100BJL/BTL-60/-70/-80
HYB514100BJ/BT/BJL/BTL
DG553Ã
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PDF
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