MB811641642A
Abstract: No abstract text available
Text: To Top / Lineup / Index FUJITSU SEMICONDUCTOR DATA SHEET DS05-11029-2E MEMORY CMOS 4 x 1 M × 16 BIT SYNCHRONOUS DYNAMIC RAM MB811641642A-100/-84/-67/-100L/-84L/-67L CMOS 4-Bank × 1,048,576-Word × 16 Bit Synchronous Dynamic Random Access Memory • DESCRIPTION
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DS05-11029-2E
MB811641642A-100/-84/-67/-100L/-84L/-67L
576-Word
MB811641642A
16-bit
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Untitled
Abstract: No abstract text available
Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-11029-1E MEMORY CMOS 4 x 1 M × 16 BIT SYNCHRONOUS DYNAMIC RAM CMOS 4-Bank × 1,048,576-Word × 16 Bit Synchronous Dynamic Random Access Memory n DESCRIPTION The Fujitsu MB811641642A is a CMOS Synchronous Dynamic Random Access Memory SDRAM containing
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DS05-11029-1E
2A-125/-100/-84/-67/-125L/-100L/-84L/-67L
576-Word
MB811641642A
16-bit
F9707
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Untitled
Abstract: No abstract text available
Text: October 1996 Edition 1.0 ÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉ ÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉ – PRELIMINARY – ÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉ PRODUCT PROFILE SHEET MB811641642A-125/-100/-84/-67 CMOS 4 x 1M x 16 SYNCHRONOUS DRAM CMOS 4-BANK x 1,048,576-WORD x 16-BIT
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MB811641642A-125/-100/-84/-67
576-WORD
16-BIT
MB811641642A
16-bit
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MB8504S064AE
Abstract: MB8504S064AE-100 MDS-144P-P08
Text: To Top / Lineup / Index FUJITSU SEMICONDUCTOR DATA SHEET DS05-11123-1E MEMORY Un-buffered 4 M x 64 BIT SYNCHRONOUS DYNAMIC RAM SO-DIMM MB8504S064AE-100/-84/-67/-100L/-84L/-67L 144-pin, 2 Clock, 1-bank, based on 4 M × 16 Bit SDRAMs with SPD • DESCRIPTION
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DS05-11123-1E
MB8504S064AE-100/-84/-67/-100L/-84L/-67L
144-pin,
MB8504S064AE
MB811641642A
144-pin
MB8504S064AE-100
MDS-144P-P08
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Untitled
Abstract: No abstract text available
Text: May 1998 Revision 1.0 data sheet SDC4UV6414- 67/84/100 T-S 32MByte (4M x 64) CMOS Synchronous DRAM Module General Description The SDC4UV6414-(67/84/100)T-S is a high performance, 64-megabyte synchronous, dynamic RAM module organized as 4M words by 64 bits, in a 168-pin, dual-in-line memory module (DIMM) package.
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SDC4UV6414-
32MByte
64-megabyte
168-pin,
MB811641642A-
4Mx16
100MHz)
84MHz)
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"write only memory"
Abstract: 8MB SDRAM MPC603UM/AD SDRAM Controller SDRAM DIMM 1997 sdram pcb layout MPC106 MPC950 MPC972 MPC980
Text: AN1722/D Motorola Order Number 12/97 REV 1 Application Note AR Y SDRAM System Design using the MPC106 by Gary Milliorn RISC Applications 1.1 Overview PR EL IM There are numerous possibilities available in designing systems, although most will probably fall into the typical category shown in Figure 1. This document refers to
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AN1722/D
MPC106
"write only memory"
8MB SDRAM
MPC603UM/AD
SDRAM Controller
SDRAM DIMM 1997
sdram pcb layout
MPC106
MPC950
MPC972
MPC980
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MPC106
Abstract: mpc980 microstripline FR4 MPC740 MPC7400 MPC7410 MPC745 MPC750 MPC755 MPC972
Text: Freescale Semiconductor, Inc. AN1722/D Rev. 1.1, 6/2003 Freescale Semiconductor, Inc. SDRAM System Design Using the MPC106 by Gary Milliorn RISC Applications This document discusses the implementation of an SDRAM-based memory system using the MPC106. The MPC106 PCI Bridge/Memory Controller provides a bridge between the
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AN1722/D
MPC106
MPC106.
MPC106
MPC603e,
MPC740,
MPC750,
MPC745,
MPC755,
MPC7400
mpc980
microstripline FR4
MPC740
MPC7410
MPC745
MPC750
MPC755
MPC972
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mb87020
Abstract: tag 9335 MB87086 MB87086A FPF21C8060UA-92 2M X 32 Bits 72-Pin Flash SO-DIMM prescaler fujitsu mb506 MB3776A mb501l MB506 ULTRA HIGH FREQUENCY PRESCALER
Text: F U J I T S U Master Product Selector Guide FUJITSU MICROELECTRONICS, INC. Visit our web site for the latest information: http://www.fujitsumicro.com Customer Response Center: For semiconductor products, flat panel displays, and PC cards in the U.S., Canada and Mexico,
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SD-SG-20342-9/96
mb87020
tag 9335
MB87086
MB87086A
FPF21C8060UA-92
2M X 32 Bits 72-Pin Flash SO-DIMM
prescaler fujitsu mb506
MB3776A
mb501l
MB506 ULTRA HIGH FREQUENCY PRESCALER
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kbc 1070 nu
Abstract: toshiba c850 JRC 386 amp LYNXEM4 D5024 hosiden DC motor 12V DFWP0125WA R5C475 Matsua inverter MID manual B9017
Text: ORDER NO. CPD0102001C0 Notebook Computer CF-28 This is the Service Manual for the following areas. M .for U.S.A. and Canada E .for U.K. G .for Germany F .for France S .for Sweden When this product is repaired, the Access Key is necessary to release security of electrical and mechanical.
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CPD0102001C0
CF-28
CF-28
kbc 1070 nu
toshiba c850
JRC 386 amp
LYNXEM4
D5024
hosiden DC motor 12V
DFWP0125WA
R5C475
Matsua inverter MID manual
B9017
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Untitled
Abstract: No abstract text available
Text: December 1997 Revision 2.0 data sheet SDC8UV6414- 67/84/100/125 T-S 64MByte (8M x 64) CMOS Synchronous DRAM Module General Description The SDC8UV6414-(67/84/100/125)T-S is a high performance, 64-megabtye synchronous, dynamic RAM module organized as 8M words by 64 bits, in a 168-pin, dual-in-line memory module (DIMM) package.
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SDC8UV6414-
64MByte
64-megabtye
168-pin,
MB811641642A-
4Mx16
125MHz)
100MHrves
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DQ32-DQ47
Abstract: No abstract text available
Text: December 1997 Revision 2.0 data sheet SOB4UL6414- 67/84/100/125 T-S 32MByte (4M x 64) CMOS Synchronous DRAM Module General Description The SOB4UL6414-(67/84/100/125)T-S is a high performance, 32-megabyte synchronous, dynamic RAM module organized as 4M words by 64 bits, in a 144-pin, small outline dual-in-line memory module (SODIMM) package.
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SOB4UL6414-
32MByte
32-megabyte
144-pin,
MB811641642A-
4Mx16
MP-DRAMM-DS-20559-12/97
DQ32-DQ47
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4banks
Abstract: No abstract text available
Text: Fujitsu Microelectronics, Inc. offers a wide variety of Random Access Memory products. The Synchronous DRAM product line offers densities of 16 and 64 megabit with a choice of two I/O structures to meet your applications requirements. 16 Mbit Synchronous DRAM
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MB81117422A
MB81117822A
MB811171622A
MB81164442A
MB81164842A
MB811641642A
4banks
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3654P
Abstract: DRAM 4464 jeida dram 88 pin MB814260 4464 dram 1024M-bit 4464 64k dram MB81G83222-008 mb814400a-70 4464 ram
Text: To Top / Lineup / Index Product Line-up Memory Volatile memory 4M-bit DRAM 5.0V RAM 4M-bit DRAM (3.3V) 16M-bit DRAM (5.0V) 16M-bit DRAM (3.3V) 16M-bit SDRAM 64M-bit SDRAM SGRAM DRAM Modules (5.0V) DRAM Modules (3.3V) SDRAM Modules Non-Volatile memory Rewritable
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16M-bit
64M-bit
68-pin)
88-pin)
MB98C81013-10
MB98C81123-10
MB98C81233-10
MB98C81333-10
3654P
DRAM 4464
jeida dram 88 pin
MB814260
4464 dram
1024M-bit
4464 64k dram
MB81G83222-008
mb814400a-70
4464 ram
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MPC106
Abstract: MPC950 MPC972 MPC980 W42B972 delay balancing in wave pipeline sdram pcb layout guide
Text: AN1722/D Motorola Order Number 12/97 REV 1 Application Note AR Y SDRAM System Design using the MPC106 by Gary Milliorn RISC Applications 1.1 Overview PR EL IM There are numerous possibilities available in designing systems, although most will probably fall into the typical category shown in Figure 1. This document refers to
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AN1722/D
MPC106
MPC106
MPC950
MPC972
MPC980
W42B972
delay balancing in wave pipeline
sdram pcb layout guide
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MB8116
Abstract: No abstract text available
Text: Dec. 1997 Revision 2.0 data sheet SDC8UL6414- 67/84/100/125 T-S 64MByte (8M x 64) CMOS Synchronous DRAM Module General Description The SDC8UL6414-(67/84/100/125)T-S is a high performance, 64-megabyte synchronous, dynamic RAM module organized as 8M words by 64 bits, in a 168-pin, dual-in-line memory module (DIMM) package.
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SDC8UL6414-
64MByte
64-megabyte
168-pin,
MB811641642A-
4Mx16
125MHz)
100MHz)
MB8116
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Untitled
Abstract: No abstract text available
Text: - PRELIM IN ARY- October 1996 Edition 1.0 PRO DUCT PROFILE SHEET FUJITSU : M B 8 1 1 6 4 1 6 4 2 A-125/-100/-84/-67 CMOS 4 x 1 M x 16 SYNCHRONOUS DRAM CMOS 4-BANK x 1,048,576-WORD x 16-BIT SYNCHRONOUS DYNAMIC RANDOM ACCESS MEMORY The Fujitsu MB811641642A is a CMOS Synchronous Dynamic Random Access Memory
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576-WORD
16-BIT
MB811641642A
16-bit
B811641642A-125
B811641642A-100
B811641642A-84
B811641642A-67
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Untitled
Abstract: No abstract text available
Text: MEMORY 41/1x 64 BIT SYNCH RONOUS DYN M S Q^| M Ì/-S4/-67/-100L/-84L/-67L 144-pin, 2 Clock, 1-bank, based on 4 M x 16 Bit SDRAMs with SPD • DESCRIPTION The Fujitsu MB8504S064AE is atully decoded, CMOS Synchronous Dynamic Random Access Memory SDRAM Module consisting ot tour MB811641642A devices which organized as two banks ot 4 M x 16 bits and a 2K-bit
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41/1x
/-S4/-67/-100L/-84L/-67L
144-pin,
MB8504S064AE
MB811641642A
144-pin
F9709
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Untitled
Abstract: No abstract text available
Text: MEMORY CMOS 4 x 1 M x 16 BIT SYNCHRONOUS DYNAMIC RAM MB811641642A-1Û0/-84/-67/-100L/-84L/-67L CMOS 4-Bank x 1,048,576-Word x 16 Bit Synchronous Dynamic Random Access Memory • DESCRIPTION The Fujitsu MB811641642A is a CMOS Synchronous Dynamic RandomiiAccess Memory SDRAM containing
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MB811641642A-1
0/-84/-67/-100L/-84L/-67L
576-Word
MB811641642A
16-bit
B811641642A
D-63303
F9802
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Untitled
Abstract: No abstract text available
Text: MEMORY Un-buffered 4 M x 64 BIT SYNCHRONOUS DYNAMIC RAM SO-DIMM MB8504S064AE-100/-84/-67/-100L/-84L/-67L 144-pin, 2 Clock, 1-bank, based on 4 M x 16 Bit SDRAMs with SPD • DESCRIPTION The Fujitsu MB8504S064AE is afully decoded, CMOS Synchronous Dynamic Random Access Memory SDRAM
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OCR Scan
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MB8504S064AE-100/-84/-67/-100L/-84L/-67L
144-pin,
MB8504S064AE
MB811641642A
144-pin
D-63303
F9804
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2a67
Abstract: No abstract text available
Text: - PRELIMINARY - October 1996 Edition 1.0 FUJITSU PRODUCT PROFILE SHEET M B 8 1 1 6 4 1 6 4 2 A - 1 2 5 / - 1 0 0 / - 8 4 / - 6 7 CMOS 4 x 1 M x 16 SYNCHRONOUS DRAM CMOS 4-BANK x 1,048,576- W O RD x 16-BIT S Y N C H R O N O U S DY NA MI C RA ND OM AC CE SS M E M O R Y
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16-BIT
11641642A
2a67
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Untitled
Abstract: No abstract text available
Text: cP IITSU May 1998 Revision 1.0 data sheet SDC4UV6414- 67/84/100 T-S 32MByte (4M x 64) CMOS Synchronous DRAM Module General Description The SDC4UV6414-(67/84/100)T-S is a high performance, 64-megabyte synchronous, dynamic RAM module organized as 4M words by 64 bits, in a 168-pin, dual-in-line memory module (DIMM) package.
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SDC4UV6414-
32MByte
64-megabyte
168-pin,
MB811641642A-
4Mx16
32MByte
100MHz)
84MHz3)
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MB8508S064AE-100L
Abstract: MB8508S064AE
Text: SDRAM Modules 2 • Synchronous ORAM Modules Vcc= +3.3V±0.3V, Ta=0°C to +70°C Organization (Wx&) 2Mx72 Part Number Mounted Device Clock Access Access [Capacity) x Frequency CLK tank Time 1 Time 2 number max. max. (ns) max. (ns) «Package» (MHz) MB8502SQ72AG-1OQ
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MB81117822A
MB81117422A
2Mx72
MB8502SQ72AG-1OQ
MB8502S07217822A
2Mx64
144Pin
MB81116822C
4Mx64
MB8508S064AE-100L
MB8508S064AE
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Untitled
Abstract: No abstract text available
Text: FUJITSU SEMICONDUCTOR DATA SHEET D S 0 5 -1 1 0 2 9 -1 E MEMORY 4 x 1 Mx16BI T SYNCHRONOUS DYNAMIC RAM M B 8 1 1 6 4 1 6 4 2 A -1 2 5 /-1 0 0 /-8 4 /-6 7 /-1 2 5 L /-1 0 0 L /-8 4 L /-6 7 L CMOS 4-Bank x 1,048,576-Word x 16 Bit Synchronous Dynamic Random Access Memory
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Mx16BI
576-Word
MB811641642A
16-bit
2A-125/-100/-84/-67/-125L/-100L/-84L/-67L
54-pin
FPT-54P-M02)
002iM
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