FP-301
Abstract: E-157227
Text: PROTECTION • SPLICING • BUNDLING • CONNECTING • HARNESS 3 BREAKOUTS • FLEXIBLE COVERING • REPAIRS • FABRICATION • HYDRAULIC COUPLING COVERINGS • CABLE JACKETING • CUSTOMIZING • INSULATING • BONDING • ENVIRONMENTAL BARRIER • GROUNDING
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IC-8311A
Abstract: POB1 IC D17107 IC-2860A 17107L ic8311 BH SMD CODE skf control board
Text: DATA SHEET MOS INTEGRATED CIRCUIT µPD17107L, 17107L A 4 BIT SINGLE-CHIP MICROCONTROLLER The µPD17107L and µPD17107L(A) are tiny microcontrollers consisting of 1K-byte (512 x 16 bits) ROM, 16 × 4 bit RAM, and 11 input/output ports. Since these microcontrollers can operate at a low voltage of 1.5 V or more, they can be used for wide variety
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PD17107L,
17107L
PD17107L
IC-8311A
POB1 IC
D17107
IC-2860A
ic8311
BH SMD CODE
skf control board
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SKE mhz
Abstract: No abstract text available
Text: TARGET SPECIFICATION PI90LV14
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PI90LV14
TIA/EIA-644-1995
320MHz
350mV
20-Pin
PI90LV14L
PI90LV14Q
SKE mhz
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D17108
Abstract: IC-2863B
Text: DATA SHEET MOS INTEGRATED CIRCUIT µPD17108L 4 BIT SINGLE-CHIP MICROCONTROLLER The µPD17108L, tiny microcontroller, consists of 1K-byte 512 x 16 ROM, 16 × 4 bit RAM, and 16 input/output ports. The µPD17108L can operate at a low voltage of 1.5 V. It can be used for wide variety of products controlled
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PD17108L
PD17108L,
PD17108L
D17108
IC-2863B
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Untitled
Abstract: No abstract text available
Text: Amphenol D Subminiature Interconnects Filtered DSubs Series FCC17 Commercial Grade Electrical Materials Durability Temperature Shell Finish Insulator Contacts Finish Current – 5A DC max – 2A RF Filtered max Contact Resistance – 15mΩ Voltage – See Capacitance
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FCC17
UL94V-0
FCC17E09
FCC17A15
FCC17B25
FCC17C37
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SKE 2.5/12
Abstract: SKE2.5 SKE2.5/04 ske2.5/08 SKE 2,5/04 FRMS IOA2 ske 2,5/04 12 ske 2,5/08 SKE 2,5/12
Text: SKE 2,5 • SKE 2,5/02 frms” 1 0 ^» I fav SKE 2,5/04 SKE 2,5/08 SKE 2,5/12 SKE 2,5/16 r sm 200 V 400 V 800 V 1200 V 1600 V V rrm 200 V 400 V 800 V 1200 V 1600 V V If a v Tomb = 45 °C, sin. 180°el 2,5 A 10 A Ifr m s = 45 °C) 2,0 A 25 °C) 180 A (Tv¡ = 150 °C)
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1.SKE 350
Abstract: 5KE300 1-5KE33
Text: 1500 WATT TRANSIENT VOLTAGE SUPPRESSORS CASE TYPE: 1.SKE BREAKDOWN VOLTAGE 1 DEVICE TYPE (2) . - 6.8 7.5 9.1 10 11 12 13 15 16 18 20 22 24 27 30 33 36 39 43 47 51 56 62 68 75 82 91 100 110 120 130 150 160 170 180 200 250 300 350 400 440 REVERSE STAND-OFF
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5KE10
5KE11
5KE12
5KE13
5KE15
5KE16
5KE18
5KE20
5KE22
5KE24
1.SKE 350
5KE300
1-5KE33
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diode SKE 1/06
Abstract: diode SKE 39 CA diode SKE 1/12 diode SKE 39 diode SKE 1/16 1-SKE 200 CA diode SKE 1/08 diode SKE 300A STUK010 diode 1.5ke 39A
Text: Transient voltage suppressor diodes. The plastic material carries U/L recognition 94V-0. 1.5KE/STUK0 Series. 1S00W. Case: DO-201AD/SMC Outline: 4/8 TYPE Unidirectional Axial Lead I S.M.D. 1.5KE 6.8 1.5KE 6.8A 1.5KE7.5 1.5KE7.5A 1.SKE8.2 1.5KE8.2A 1.5KE 9.1
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1S00W.
DO-201AD/SMC
5KE51
5KE56
5KE56A
5KE68A
STUK06I
STUK56I
diode SKE 1/06
diode SKE 39 CA
diode SKE 1/12
diode SKE 39
diode SKE 1/16
1-SKE 200 CA
diode SKE 1/08
diode SKE 300A
STUK010
diode 1.5ke 39A
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Semikron ske
Abstract: SKE4F SKE 2.5/08 SKE4F2 semikron ske 4 f 2 SKE 2 F 2/02 SKE 4 F 2/04 SKE 2,5/17 SKE4G2/04 SKE 1/08
Text: 1SE D 2 SEMIKRON INC Ô l 3 t t 7 1 QQQ1Ö37 b | SE MIKRON - - T - 0 3 - IS Ifr m s V rsm V rrm Ifa v V trr Symbol sin. 180; Tamb = 45 °C 2A = 0,2 (IS trr — SKE4G2/02 SKE4G2/04 SKE 4 G 2/06 SKE 4 F 2/02 SKE 4 F 2/04 SKE 4 F 2/06 SKE 4 F 2/08
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SKE4G2/02
SKE4G2/04
fll3bb71
Q001fl40
Semikron ske
SKE4F
SKE 2.5/08
SKE4F2
semikron ske 4 f 2
SKE 2 F 2/02
SKE 4 F 2/04
SKE 2,5/17
SKE4G2/04
SKE 1/08
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SKE4F2/04
Abstract: SKE4F2/10 SKE4F2 SKE4F2/08 SKE4F2/02 SKE 4 F 2/08 ske4f2/06 SKE 4 F 2/04 SKE 4 F 2/06
Text: SKE4F2 I Frm s = I O A ; 1FAV SKE 4 F 2/01 SKE 4 F 2/02 SKE 4 F 2 /04 SKE 4 F 2 /06 SKE 4 F 2/08 SKE 4 F 2/10 V rsm 100V 200 V 400 V 600 V 800 V 1000 V V rrm 100V 200 V 400 V 600 V 800 V 1000 V Ifav Tamb = 4 5 °C ,s in . 180 °el 10 A I frm s I fsm i2t
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SEMIKRON SKE
Abstract: sk 4f1 semikron ske 4 f 2 SK 4F1/10 ske4f1 SKE4F ske 2.5 SKE4F1/08 SK+4F1/06 SKE4F1/01
Text: 156 0 | SEMIKRCN INC ai3bt.?l 000103 3 1 | sem ikrd n T - 0 3 - J S Fast Recovery Rectifier Diodes Ifrm s maximum values for continuous operation V rsm V rrm 7A Ifav (sin. 180; Tamb = 45 °C) SKE2F1 SKE4F1 SKE4G1 1,2 A V trr = 0,2 [is trr = 0,4 (is 100 SKE 2 F 1/01
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2F1/02
4F1/02
4F1/08
4F1/10
SEMIKRON SKE
sk 4f1
semikron ske 4 f 2
SK 4F1/10
ske4f1
SKE4F
ske 2.5
SKE4F1/08
SK+4F1/06
SKE4F1/01
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SKE 1/04
Abstract: SKE+1/04 SEMIKRON SKE SKE 2.5/16 SKE 2.5/12 SKE 2.5/08 SKS1/04 sks 1/16 SKE+2.5/16 ske 1/12
Text: 15E 0 I S E M I K R ON INC • o Û13t,b?l GQQ1771 2 | t ^ \ - I > 2,5 A 1,3 A Types HF V 1,4 A Cmax. Rmin. Types Cmax. Rmin n HF Types a 2,5 A Cmax. Rmin VF 0,5 SKS 1/01 5000 0,5 SKE 2,5/01 10000 0,2 400 SKE 1/04 1600 1,5 SKS 1/04 3500 3 SKS 1/08 1700 0,8 SKE 2,5/04 5000 0,5
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GQQ1771
fll3fcb71
fci71
SKE 1/04
SKE+1/04
SEMIKRON SKE
SKE 2.5/16
SKE 2.5/12
SKE 2.5/08
SKS1/04
sks 1/16
SKE+2.5/16
ske 1/12
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SKE 2,5/17
Abstract: SEMIKRON SKE semikron ske 4 f 2 SKE+2.5/17 SKE 2.5/16 SKE 2.5/17 SKE 2.5/08 HSK-E 5000 HSKE SKE+2.5/16
Text: se MIKROn Section 10: High Voltage Rectifiers V rrm V V BR VvRMS Types V I VF Ifav Ifav Ifn Toti Tamb (f=1A Tamb =45'C =75<C *4 5 'C V A A A V 6 000 7 500 2 500 HSKE 250011100-0,3 8 000 10 000 3 500 H SKE 3500/1550*0,3 12 000 15 000 5 0 0 0 H SKE 5000/2200-0,25
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SKR1M40
Abstract: diodos rectificadores SKN1M40 SKE4F SKN60F rectificadores 1.SKE 3500 retificador DO-205 SKE2F
Text: SENIKRON INC DtE I | filBbb?! 0001514 3 | 7 J - 2,^ t ^ r Fast Rectifier Diodes Schnelle Gleichrichterdioden Types V rsm V rrm Ifrms V A 7 1 SKE 4 F 1/01 102 /04 /06 /08 /10 SKE 4 G 10/02 /04 /OS SKE 2 F 2/01 /02 /04 /06 SKE 4 F 2/01 102 /04 m SKE4G2D/02
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SKN2F17/04*
SKN3F20/06*
SKN2FS0/04*
SKN60F12
SKR60F12
SKR135F08
SKR140F12
SKR2F17/04*
SKR3F20/06*
SKE4G2D/02
SKR1M40
diodos rectificadores
SKN1M40
SKE4F
SKN60F
rectificadores
1.SKE 3500
retificador
DO-205
SKE2F
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Untitled
Abstract: No abstract text available
Text: SEUIKRON INC GbE D | Ô13bb71 OGD1EDÛ Ô | T - Rectifier Diodes Types Gleichrichterdioden V rsm If r m s 57 1S V 1N4002 1N4004 1N4006 1N4007 1002 400 800 1000 S N 113 1600 SKE SKN /16 6/01 /04 /OS /10 100 400 800 1000 /12 SK mA mQ °C 302> 4,5 8,3 ms, 175°C)
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13bb71
1N4002
1N4004
1N4006
1N4007
DO-205AC
DO-30
DO-205
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P621
Abstract: PD7500 LED60 UPD75008 diode SKE 39 CA P621 capacitor pd6122 75P0016 IC-3647 diode 937 ke
Text: APPLICA T/ON NOTE P D 7 5 0 0 0 8 SUBSERIES 4 -B IT SINGLE-CHIP MICROCONTROLLER /¿PD750004 aPD75G006 ¿¿PD750008 /¿PD75P0G1 B NEC Corporation 1996 Document No. U10452EJ1VOANOO 1st edition Date Published February 1996 P Printed in Japan The export o f th is p ro d u ct from Japan is regulated by the Ja panese g o vernm ent. To export th is p roduct may be p rohibited
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uPD750004
PD75G006
PD750008
PD75P0G1
U10452EJ1VOANOO
P621
PD7500
LED60
UPD75008
diode SKE 39 CA
P621 capacitor
pd6122
75P0016
IC-3647
diode 937 ke
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Untitled
Abstract: No abstract text available
Text: w t GEC P LESS EY S I M I C O N I I I O K S P1480 LAN CAM 1KX64-BIT CMOS CONTENT-ADDRESSABLE MEMORY (SUPERSEDES SEPTEMBER 1993 EDITIO N The P1480 LAN CAM is a 1K X 64-bit fixed-width CMOS Content-addressable Memory (CAM) aimed at address filtering applications in Local-area Network (LAN) bridges
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P1480
1KX64-BIT
P1480
64-bit
37bflS22
37b6S22
28-LEAD
52-LEAD
37bfiS22
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Untitled
Abstract: No abstract text available
Text: jim 84 19*3 MU9C1480 LANCAM S E M I C O N D U C T O R S MUN; ic, ; H DISTINCTIVE CHARACTERISTICS 1 K X 64-bit C M O S Content-addressable M em ory CAM 64-bit internal data path multiplexed four w ays over a 16-bit I/O interface Sim ple four-w ire synchronous control directly usable
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MU9C1480
64-bit
16-bit
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Untitled
Abstract: No abstract text available
Text: IDT74FCT3807/A 3.3V CMOS I - T O - IO CL O C K DRIVER FEATURES: • • • • • • • • • • • • • Available in SOIC, SSOP, QSOP packages 0.5 MICRON CMOS Technology Guaranteed low skew < 350ps max. Very low duty cycle distortion < 350ps (max.)
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IDT74FCT3807/A
350ps
FCT3807/A
IDT74FCT3807/A
S020-2)
S020-7)
S020-8)
1-to-10
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Q60204-Y12-B
Abstract: BDV13 Q60204-Y13-D BDY12 BDY13 Q62901-B16-A 510Z5
Text: NPN-Transistoren für NF-Endstufen und Schalteranwendungen BDY12 BDY13 B D Y 1 2 und B D Y 1 3 sind epitaktische NPN-Silizium-Planar-Leistungstransistoren im Gehäuse 9 A 2 DIN 41 875 S O T -9 . Der Kollektor ist mit dem Gehäuse elektrisch ver bunden. Für die isolierte Befestigung der Transistoren auf einem Chassis sind je 1 Glimmer
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BDY12
BDY13
Q60204-Y12-B
Q60204â
Y13-C
Q60204-Y12â
Q60204-Y13-D
Q62901-B16-A
Q60204-Y13-B
BDV13
Q60204-Y13-D
Q62901-B16-A
510Z5
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Semikron sK1 04
Abstract: semikron sk1 SKE1/12
Text: SEHIKRON INC 3tE 1 • S13bb71 ODOabSS 5 M S E K £ S E M I K K llN I fr m s V rsm Rectifier Diodes maximum values for continuous operation 2,5 A V rrm | 3A | 5A SKE1]> SKS 11) SKE 2,51) lF A V ( s in . 180;Tamb = 45 °C) 1,4 A 1,3 A Types V 400 800 - S K E 1/08
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S13bb71
813hb
0002b5a
Semikron sK1 04
semikron sk1
SKE1/12
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Untitled
Abstract: No abstract text available
Text: s e m ik r d n Section 10: High Voltage Rectifiers V rrm V BR VvRMS Types (f a v If a v If n Toil Tamb =45V =75*0 =45cC A A A VF N Rthja Tamb V V V V °C/W HSKE S K V Vè B 6 000 7 500 2 500 H S K E 2500/1100-0,3 8 000 10 000 3 500 H S K E 3500/1550-0,3 12 000 15 000 5 000 H S K E 5000/2200-0,25
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1N62* bidirectional 6.2
Abstract: 1.5KE160
Text: FAGOR ^ T ran sita! voltage supp w io tt diodêf The p lastic m aterial c a rrie s U L recognition 94V -0. 1N62C/1.SKE C Series. 1.500 W./l ms. expo. Plastic Case: DO-20LAE. Outline: 4 M axim um R e v e rse L e a k a g e Current Type W ^ Bidirectional /¿A
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1N62C/1
DO-20LAE.
1N6271C
1N6272C
1N6273C
1N6274C
5KE10C
5KE11C
5KE12C
SKE13C
1N62* bidirectional 6.2
1.5KE160
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JL - 012C
Abstract: No abstract text available
Text: DISTINCTIVE CHARACTERISTICS 1024 X 64-bit Content-addressable Memory CAM Architecture similar to the industry standard MU9C1480 LANCAM for ease of use Patented Associated Data feature allows storage of related data with each CAM entry that is immediately
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64-bit
MU9C1480
16-bit
JL - 012C
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