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    1.5 TON AC Search Results

    1.5 TON AC Result Highlights (2)

    Part ECAD Model Manufacturer Description Download Buy
    D1U74T-W-1600-12-HB4AC Murata Manufacturing Co Ltd AC/DC 1600W, Titanium Efficiency, 74 MM , 12V, 12VSB, Inlet C20, Airflow Back to Front, RoHs Visit Murata Manufacturing Co Ltd
    D1U54T-M-2500-12-HB4C Murata Manufacturing Co Ltd 2.5KW 54MM AC/DC 12V WITH 12VDC STBY BACK TO FRONT AIR Visit Murata Manufacturing Co Ltd

    1.5 TON AC Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    SD210DE

    Abstract: A 4042 B high speed Zener Diode SD5000 SD214DE SST210 SST214 SD214DE linear
    Text: SD-SST210/214 N-CHANNEL LATERAL DMOS SWITCH Linear Integrated Systems Product Summary Part Number V BR DS Min(V) VGS(th) Max (V) rDS(on) Max(Ω) Crss Max (pF) tON Max (ns) SD210DE 30 1.5 45 @ VGS = 10V 0.5 2 SD214DE 20 1.5 45 @ VGS = 10V 0.5 2 SST210 30 1.5


    Original     		PDF SD-SST210/214 SD210DE SD214DE SST210 SST214 1500C 1250C SD210DE A 4042 B high speed Zener Diode SD5000 SD214DE SST210 SST214 SD214DE linear

    N CHANNEL jfet Low Noise Audio Amplifier

    Abstract: diode ZENER A8 P-Channel Depletion Mosfets SST214 N CHANNEL jfet ultra Low Noise Audio Amplifier 2N4351 bare die zener sd214de ultra FAST DMOS FET Switches sst210 sot-143
    Text: SD-SST210/214 N-CHANNEL LATERAL DMOS SWITCH Linear Integrated Systems Product Summary Part Number V BR DS Min(V) VGS(th) Max (V) rDS(on) Max(Ω) Crss Max (pF) tON Max (ns) SD210DE 30 1.5 45 @ VGS = 10V 0.5 2 SD214DE 20 1.5 45 @ VGS = 10V 0.5 2 SST210 30 1.5


    Original     		PDF SD-SST210/214 SD210DE SD214DE SST210 SST214 N CHANNEL jfet Low Noise Audio Amplifier diode ZENER A8 P-Channel Depletion Mosfets N CHANNEL jfet ultra Low Noise Audio Amplifier 2N4351 bare die zener ultra FAST DMOS FET Switches sst210 sot-143

    zener diode 15 v

    Abstract: ultra low igss pA SD5400CY sst211 sot-143 5401 transistor datasheet SD5000 quad sd5000i SD5000N SD5001N SD5401CY
    Text: SD5000/5400 Series N-Channel Lateral DMOS FETs SD5000I SD5000N SD5001N SD5400CY SD5401CY Product Summary Part Number V BR DS Min (V) VGS(th) Max (V) rDS(on) Max (W) Crss Max (pF) tON Max (ns) SD5000I 20 1.5 70 @ VGS = 5 V 0.5 2 SD5000N 20 1.5 70 @ VGS = 5 V


    Original     		PDF SD5000/5400 SD5000I SD5000N SD5001N SD5400CY SD5401CY zener diode 15 v ultra low igss pA SD5400CY sst211 sot-143 5401 transistor datasheet SD5000 quad sd5000i SD5000N SD5001N SD5401CY

    Untitled

    Abstract: No abstract text available
    Text: SD5000/5001/5400/5401 QUAD N-CHANNEL LATERAL DMOS SWITCH ZENER PROTECTED Product Summary Part Number V BR DS Min (V) VGS(th) Max (V) rDS(on) Max ( ) Crss Max (pF) tON Max (ns) SD5000I 20 1.5 70 @ VGS = 5 V 0.5 2 SD5000N 20 1.5 70 @ VGS = 5 V 0.5 2 SD5001N


    Original     		PDF SD5000/5001/5400/5401 SD5000I SD5000N SD5001N SD5400CY SD5401CY 25-year-old,

    d312

    Abstract: SD5000I AN301 SD5000N SD5001N SD5400CY SD5401CY SD5000 SD5401
    Text: SD5000/5400 Series Siliconix NĆChannel Lateral DMOS FETs SD5000I SD5000N SD5001N Product Summary Part Number V BR DS Min (V) SD5400CY SD5401CY VGS(th) Max (V) rDS(on) Max (W) Crss Max (pF) tON Max (ns) SD5000I 20 1.5 70 @ VGS = 5 V 0.5 2 SD5000N 20 1.5 70 @ VGS = 5 V


    Original     		PDF SD5000/5400 SD5000I SD5000N SD5001N SD5400CY SD5401CY d312 SD5000I AN301 SD5000N SD5001N SD5400CY SD5401CY SD5000 SD5401

    sd5000

    Abstract: SD5000N SD5400CY SD5401 sst211 sot-143 SD5000I SD5001N SD5401CY SD5000 SILICONIX
    Text: SD5000/5400 Series N-Channel Lateral DMOS FETs SD5000I SD5000N SD5001N SD5400CY SD5401CY Product Summary Part Number V BR DS Min (V) VGS(th) Max (V) rDS(on) Max (W) Crss Max (pF) tON Max (ns) SD5000I 20 1.5 70 @ VGS = 5 V 0.5 2 SD5000N 20 1.5 70 @ VGS = 5 V


    Original     		PDF SD5000/5400 SD5000I SD5000N SD5001N SD5400CY SD5401CY sd5000 SD5000N SD5400CY SD5401 sst211 sot-143 SD5000I SD5001N SD5401CY SD5000 SILICONIX

    SD215DE

    Abstract: SD211 SD211DE SD213DE SD214 SST211 SST213 SST215 #70607
    Text: SD211DE/SST211 Series N-Channel Lateral DMOS FETs SD211DE SD213DE SD215DE SST211 SST213 SST215 Product Summary Part Number V BR DS Min (V) VGS(th) Max (V) rDS(on) Max (W) Crss Max (pF) tON Max (ns) SD211DE 30 1.5 45 @ VGS = 10 V 0.5 2 SD213DE 10 1.5 45 @ VGS = 10 V


    Original     		PDF SD211DE/SST211 SD211DE SD213DE SD215DE SST211 SST213 SST215 SD215DE SD211 SD211DE SD213DE SD214 SST211 SST213 SST215 #70607

    SD5000N

    Abstract: SD5000 SD5000I SD5001N SD5400CY SD5401CY #70607 SD5400
    Text: SD5000/5400 Series N-Channel Lateral DMOS FETs SD5000I SD5000N SD5001N SD5400CY SD5401CY Product Summary Part Number V BR DS Min (V) VGS(th) Max (V) rDS(on) Max (W) Crss Max (pF) tON Max (ns) SD5000I 20 1.5 70 @ VGS = 5 V 0.5 2 SD5000N 20 1.5 70 @ VGS = 5 V


    Original     		PDF SD5000/5400 SD5000I SD5000N SD5001N SD5400CY SD5401CY SD5000N SD5000 SD5000I SD5001N SD5400CY SD5401CY #70607 SD5400

    sst211 vishay

    Abstract: SD5400CY sd5400 High-Speed Analog N-Channel DMOS FETs -TO-72
    Text: SD5400CY/SD5401CY Vishay Siliconix N-Channel Lateral DMOS FETs PRODUCT SUMMARY Part Number V BR DS Min (V) VGS(th) Max (V) rDS(on) Max (W) Crss Max (pF) tON Max (ns) SD5400CY 20 1.5 75 @ VGS = 5 V 0.5 2 SD5401CY 10 1.5 75 @ VGS = 5 V 0.5 2 FEATURES BENEFITS


    Original     		PDF SD5400CY/SD5401CY SD5400CY SD5401CY S-00529--Rev. 03-Apr-00 sst211 vishay sd5400 High-Speed Analog N-Channel DMOS FETs -TO-72

    SST211

    Abstract: SST215 SD215DE SD211 SD211DE SD213DE SD214 SST213 D5 marking array-SD5000
    Text: SD211DE/SST211 Series N-Channel Lateral DMOS FETs SD211DE SD213DE SD215DE SST211 SST213 SST215 Product Summary Part Number V BR DS Min (V) VGS(th) Max (V) rDS(on) Max (W) Crss Max (pF) tON Max (ns) SD211DE 30 1.5 45 @ VGS = 10 V 0.5 2 SD213DE 10 1.5 45 @ VGS = 10 V


    Original     		PDF SD211DE/SST211 SD211DE SD213DE SD215DE SST211 SST213 SST215 SST211 SST215 SD215DE SD211 SD211DE SD213DE SD214 SST213 D5 marking array-SD5000

    2SK2037

    Abstract: No abstract text available
    Text: 2SK2037 TOSHIBA Field Effect Transistor Silicon N Channel Type 2SK2037 High Speed Switching Applications Analog Switching Applications • High input impedance. • Low gate threshold voltage: Vth = 0.5~1.5 V • Excellent switching times: ton = 0.28 s typ.


    Original     		PDF 2SK2037 2SK2037

    Untitled

    Abstract: No abstract text available
    Text: 2SK2037 TOSHIBA Field Effect Transistor Silicon N Channel Type 2SK2037 High Speed Switching Applications Analog Switching Applications • High input impedance. • Low gate threshold voltage: Vth = 0.5~1.5 V • Excellent switching times: ton = 0.28 s typ.


    Original     		PDF 2SK2037 SC-70

    sd211de

    Abstract: No abstract text available
    Text: SD5000/5001/5400/5401 QUAD N-CHANNEL LATERAL DMOS SWITCH ZENER PROTECTED Product Summary Part Number V BR DS Min (V) VGS(th) Max (V) rDS(on) Max (Ω) Crss Max (pF) tON Max (ns) SD5000I 20 1.5 70 @ VGS = 5 V 0.5 2 SD5000N 20 1.5 70 @ VGS = 5 V 0.5 2 SD5001N


    Original     		PDF SD5000/5001/5400/5401 SD5000I SD5000N SD5001N SD5400CY SD5401CY 25-year-old, sd211de

    Untitled

    Abstract: No abstract text available
    Text: 2SK2034 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK2034 High Speed Switching Applications Analog Switch Applications • High input impedance. • Low gate threshold voltage.: Vth = 0.5~1.5 V • Excellent switching times: ton = 0.16 s typ.


    Original     		PDF 2SK2034

    SD5001I

    Abstract: SD5400CY
    Text: SD5000/5001/5400/5401 QUAD N-CHANNEL LATERAL DMOS SWITCH ZENER PROTECTED Product Summary Part Number V BR DS Min (V) VGS(th) Max (V) rDS(on) Max (Ω) Crss Max (pF) tON Max (ns) SD5000I 20 1.5 70 @ VGS = 5 V 0.5 2 SD5000N 20 1.5 70 @ VGS = 5 V 0.5 2 SD5001N


    Original     		PDF SD5000/5001/5400/5401 SD5000I SD5000N SD5001N SD5400CY SD5401CY 25-year-old, SD5001I

    SD214DE

    Abstract: SD5000 quad ultra low igss pA SD210DE
    Text: SD210DE/214DE N-Channel Lateral DMOS FETs Product Summary Part Number V BR DS Min (V) VGS(th) Max (V) rDS(on) Max (W) Crss Max (pF) tON Max (ns) SD210DE 30 1.5 45 @ VGS = 10 V 0.5 2 SD214DE 20 1.5 45 @ VGS = 10 V 0.5 2 Features Benefits Applications D D D


    Original     		PDF SD210DE/214DE SD210DE SD214DE S-51850--Rev. 14-Apr-97 SD214DE SD5000 quad ultra low igss pA SD210DE

    Untitled

    Abstract: No abstract text available
    Text: 2SK2035 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK2035 High Speed Switching Applications Analog Switching Applications • High input impedance. • Low gate threshold voltage: Vth = 0.5~1.5 V • Excellent switching times: ton = 0.16 s typ.


    Original     		PDF 2SK2035

    SD210DE

    Abstract: SD210 SST211 SD214DE #70607
    Text: SD210DE/214DE N-Channel Lateral DMOS FETs Product Summary Part Number V BR DS Min (V) VGS(th) Max (V) rDS(on) Max (W) Crss Max (pF) tON Max (ns) SD210DE 30 1.5 45 @ VGS = 10 V 0.5 2 SD214DE 20 1.5 45 @ VGS = 10 V 0.5 2 Features Benefits Applications D D D


    Original     		PDF SD210DE/214DE SD210DE SD214DE S-51850--Rev. 14-Apr-97 SD210DE SD210 SST211 SD214DE #70607

    2SK2033

    Abstract: No abstract text available
    Text: 2SK2033 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK2033 High Speed Switching Applications Analog Switch Applications • High input impedance. • Low gate threshold voltage: Vth = 0.5~1.5 V • Excellent switching times: ton = 0.16 s typ.


    Original     		PDF 2SK2033 O-236MOD SC-59 2SK2033

    2SK2035

    Abstract: No abstract text available
    Text: 2SK2035 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK2035 High Speed Switching Applications Analog Switching Applications • High input impedance. • Low gate threshold voltage: Vth = 0.5~1.5 V • Excellent switching times: ton = 0.16 s typ.


    Original     		PDF 2SK2035 2SK2035

    2SK2034

    Abstract: No abstract text available
    Text: 2SK2034 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK2034 High Speed Switching Applications Analog Switch Applications • High input impedance. • Low gate threshold voltage.: Vth = 0.5~1.5 V • Excellent switching times: ton = 0.16 s typ.


    Original     		PDF 2SK2034 2SK2034

    2sk2036

    Abstract: No abstract text available
    Text: 2SK2036 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK2036 High Speed Switching Applications Analog Switching Applications • High input impedance. • Low gate threshold voltage: Vth = 0.5~1.5 V • Excellent switching times: ton = 0.28 s typ.


    Original     		PDF 2SK2036 SC-59 2sk2036

    2SK2009

    Abstract: No abstract text available
    Text: 2SK2009 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK2009 High Speed Switching Applications Analog Switch Applications • High input impedance. • Low gate threshold voltage: Vth = 0.5~1.5 V • Excellent switching times: ton = 0.06 s typ.


    Original     		PDF 2SK2009 O-236MOD 2SK2009

    Untitled

    Abstract: No abstract text available
    Text: 2SK2034 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK2034 High Speed Switching Applications Analog Switch Applications • High input impedance. • Low gate threshold voltage.: Vth = 0.5 to 1.5 V • Excellent switching times: ton = 0.16 s typ.


    Original     		PDF 2SK2034