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    2SK2009 Search Results

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    2SK2009 Price and Stock

    Toshiba America Electronic Components 2SK2009TE85LF

    MOSFET N-CH 30V 200MA SC59-3
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    DigiKey 2SK2009TE85LF Cut Tape 5,705 1
    • 1 $0.79
    • 10 $0.492
    • 100 $0.79
    • 1000 $0.21914
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    2SK2009TE85LF Digi-Reel 5,705 1
    • 1 $0.79
    • 10 $0.492
    • 100 $0.79
    • 1000 $0.21914
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    2SK2009TE85LF Reel 3,000 3,000
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    Mouser Electronics 2SK2009TE85LF 35,685
    • 1 $0.6
    • 10 $0.404
    • 100 $0.276
    • 1000 $0.197
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    Win Source Electronics 2SK2009TE85LF 105,900
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    Toshiba America Electronic Components 2SK2009(TE85L,F)

    Trans MOSFET N-CH Si 30V 0.2A 3-Pin S-Mini T/R
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    Verical 2SK2009(TE85L,F) 2,975 40
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    Newark 2SK2009(TE85L,F) Cut Tape 2,078 1
    • 1 $0.137
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    Quest Components 2SK2009(TE85L,F) 3,716
    • 1 $2.916
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    • 100 $2.916
    • 1000 $1.0935
    • 10000 $1.0935
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    Avnet Asia 2SK2009(TE85L,F) 24 Weeks 3,000
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    Chip1Stop 2SK2009(TE85L,F) Cut Tape 2,975
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    • 10 $0.48
    • 100 $0.22
    • 1000 $0.17
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    EBV Elektronik 2SK2009(TE85L,F) 27 Weeks 3,000
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    Toshiba America Electronic Components 2SK2009(TE85L)

    200 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236
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    Quest Components 2SK2009(TE85L) 722
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    Others 2SK2009

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    Chip 1 Exchange 2SK2009 5,745
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    Toshiba America Electronic Components 2SK2009

    MOSFET N-CH 30V 0.2A SMINI
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    Win Source Electronics 2SK2009 107,700
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    • 1000 $0.227
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    Find more 2SK2009 price and stock on Findchips.com

    2SK2009 Datasheets (7)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SK2009 Toshiba N-Channel MOSFET Original PDF
    2SK2009 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SK2009 Toshiba FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE Scan PDF
    2SK2009 Toshiba Silicon N channel field effect transistor for high speed switching applications and analog switch applications Scan PDF
    2SK2009TE85L Toshiba 2SK2009 - TRANSISTOR 200 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236, FET General Purpose Small Signal Original PDF
    2SK2009TE85LF Toshiba FETs - Single, Discrete Semiconductor Products, MOSF N CH 30V 200MA SMINI Original PDF
    2SK2009TE85R Toshiba 2SK2009 - TRANSISTOR 200 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236, FET General Purpose Small Signal Original PDF

    2SK2009 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2SK2009

    Abstract: No abstract text available
    Text: 2SK2009 東芝電界効果トランジスタ シリコンNチャネルMOS形 2SK2009 ○ 高速スイッチング用 ○ アナログスイッチ用 単位: mm • 入力インピーダンスが高く, 駆動電流が小さい。 • Vth が低く, 低電圧での CMOS などからの直接駆動が可能。


    Original     		PDF 2SK2009 O-236MOD SC-59 2SK2009

    2SK2009

    Abstract: No abstract text available
    Text: 2SK2009 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK2009 High Speed Switching Applications Analog Switch Applications • High input impedance. • Low gate threshold voltage: Vth = 0.5~1.5 V • Excellent switching times: ton = 0.06 s typ.


    Original     		PDF 2SK2009 O-236MOD 2SK2009

    Untitled

    Abstract: No abstract text available
    Text: Reliability Tests Report Product Name: 2SK2009 Package Name: S-Mini 1. Thermal tests Test Item Heat resistance Reflow Heat resistance (Flow) Heat resistance (Iron) Temperature cycling Test Condition Peak : 260 deg.C(a moment) Reflow zone : 230 deg.C 30 to 50 s


    Original     		PDF 2SK2009

    Untitled

    Abstract: No abstract text available
    Text: 2SK2009 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK2009 High Speed Switching Applications Analog Switch Applications • High input impedance. • Low gate threshold voltage: Vth = 0.5 to 1.5 V • Excellent switching times: ton = 0.06 s typ.


    Original     		PDF 2SK2009 O-236MOD

    Untitled

    Abstract: No abstract text available
    Text: 2SK2009 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK2009 High Speed Switching Applications Analog Switch Applications • High input impedance. • Low gate threshold voltage: Vth = 0.5~1.5 V • Excellent switching times: ton = 0.06 s typ.


    Original     		PDF 2SK2009 O-236MOD SC-59

    2SK2009

    Abstract: No abstract text available
    Text: 2SK2009 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK2009 High Speed Switching Applications Analog Switch Applications • High input impedance. • Low gate threshold voltage: Vth = 0.5~1.5 V • Excellent switching times: ton = 0.06 s typ.


    Original     		PDF 2SK2009 O-236MOD 2SK2009

    2SK2009

    Abstract: TO-236Mod
    Text: 2SK2009 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK2009 High Speed Switching Applications Analog Switch Applications • High input impedance. • Low gate threshold voltage: Vth = 0.5~1.5 V • Excellent switching times: ton = 0.06 µs typ.


    Original     		PDF 2SK2009 O-236MOD 2SK2009 TO-236Mod

    Untitled

    Abstract: No abstract text available
    Text: 2SK2009 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK2009 High Speed Switching Applications Analog Switch Applications • High input impedance. • Low gate threshold voltage: Vth = 0.5~1.5 V • Excellent switching times: ton = 0.06 s typ.


    Original     		PDF 2SK2009 O-236MOD

    2SK2009

    Abstract: TO236
    Text: 2SK2009 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK2009 High Speed Switching Applications Analog Switch Applications • High input impedance. · Low gate threshold voltage: Vth = 0.5~1.5 V · Excellent switching times: ton = 0.06 µs typ.


    Original     		PDF 2SK2009 O-236MOD 2SK2009 TO236

    2SJ305A

    Abstract: 2sj305 2SK2009
    Text: 2SJ305 東芝電界効果トランジスタ シリコンPチャネルMOS形 2SJ305 ○ 高速スイッチング用 ○ アナログスイッチ用 単位: mm • 入力インピーダンスが高く, 駆動電流が小さい。 • Vth が低く, 低電圧での CMOS などからの直接駆動が可能。


    Original     		PDF 2SJ305 2SK2009 O-236MOD SC-59 2SJ305A 2sj305 2SK2009

    5252 F 1009 4-pin

    Abstract: TPC 8028 MARKING S3H SOT363 TK8A50D equivalent tk6a65d equivalent 2SK4112 TPCA8030-H toshiba laptop charging CIRCUIT diagram TK80A08K3 TPCA*8025
    Text: 2009-5 PRODUCT GUIDE MOSFETs SEMICONDUCTOR http://www.semicon.toshiba.co.jp/eng C O N T E N T S 1 Features and Structures . 3 2 Toshiba’s MOSFET Product Lines and Part Numbering Schemes . 4


    Original     		PDF

    lm2804

    Abstract: marking 513 SOD-323 land dpu 230 toshiba diode 1SS416 footprint 5252 F solar sot23 2fv TAH8N401K IC sj 4558 zener diode reference guide rn4983
    Text: 2008-3 PRODUCT GUIDE General-Purpose Small-Signal Surface-Mount Devices s e m i c o n d u c t o r h t tp://w w w.semico n .to shib a .co.jp /en g C O N T E N T S 1 Packaging Information.


    Original     		PDF BCE0030C S-167 BCE0030D lm2804 marking 513 SOD-323 land dpu 230 toshiba diode 1SS416 footprint 5252 F solar sot23 2fv TAH8N401K IC sj 4558 zener diode reference guide rn4983

    SSM3K7002

    Abstract: ESM 310 SSM3J16FU SSM3K03TE zener diode reference guide SSM5N03FE US6 KEC SSM5G01TU 6798 SSM3J13T
    Text: S-MOS Series Small-Signal MOSFETs for Switching PRODUCT GUIDE S -MOS Family S-MOS Family Toshiba presents a range of small-signal MOSFET S-MOS devices which have been developed for various switching, interface and DC/DC converter applications. These MOSFETs have been classified into families according to application,


    Original     		PDF 3402C-0209 SSM3K7002 ESM 310 SSM3J16FU SSM3K03TE zener diode reference guide SSM5N03FE US6 KEC SSM5G01TU 6798 SSM3J13T

    Untitled

    Abstract: No abstract text available
    Text: 2SJ305 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type 2SJ305 High Speed Switching Applications Analog Applications • High input impedance • Low gate threshold voltage.: Vth = −0.5~−1.5 V • Excellent switching times.: ton = 0.06 s typ.


    Original     		PDF 2SJ305 2SK2009 SC-59

    ESM 740

    Abstract: transistor SMD t04 51 D245A LM2804 transistor SMD t04 Solar Garden Light Controller 4 pin 2fu smd transistor transistor t04 smd pnp Octal Darlington Transistor Arrays DIP WB126
    Text: 2004-3 PRODUCT GUIDE General-Purpose Surface-Mount Devices semiconductor 2004 http://www.semicon.toshiba.co.jp/eng Greeting from Toshiba Toshiba Corporation has developed and provided key devices such as information equipment and information appliance, employing the most advanced technology.


    Original     		PDF SCE0003A ESM 740 transistor SMD t04 51 D245A LM2804 transistor SMD t04 Solar Garden Light Controller 4 pin 2fu smd transistor transistor t04 smd pnp Octal Darlington Transistor Arrays DIP WB126

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA 2SK2009 i ^ \c i TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE nnq Unit in mm HIGH SPEED SWITCHING APPLICATIONS. ANALOG SWITCH APPLICATIONS. • • • • • • + 0.5 25 -0 .3 + 0.25 High Input Impedance. Low Gate Threshold Voltage


    OCR Scan     		PDF 2SK2009

    2SK2009

    Abstract: No abstract text available
    Text: TO SH IBA 2SK2009 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 2SK2009 HIGH SPEED SWITCHING APPLICATIONS. ANALOG SWITCH APPLICATIONS. • High Input Impedance. • Low Gate Threshold Voltage Vth = 0.5~1.5V • Excellent Switching Times ton = 0.06yt/s Typ.


    OCR Scan     		PDF 2SK2009 06yt/s 2SK2009

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA 2SK2009 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 2SK2009 HIGH SPEED SWITCHING APPLICATIONS. ANALOG SWITCH APPLICATIONS. • High Input Impedance. • Low Gate Threshold Voltage Vth = 0.5~1.5V • Excellent Switching Times ton = 0.06,i/s Typ.


    OCR Scan     		PDF 2SK2009 01form

    Untitled

    Abstract: No abstract text available
    Text: SILICON P CHANNEL MOS TYPE 2SJ305 HIGH SPEED SWITCHING APPLICATIONS. ANALOG APPLICATIONS. • • • High Input Impedance Low Gate Threshold Voltage. Excellent Switching Times. • • • Low Drain-Source ON Resistance. Small Package. Complementary to 2SK2009.


    OCR Scan     		PDF 2SJ305 2SK2009.

    2SK2009

    Abstract: No abstract text available
    Text: TOSHIBA 2SK2009 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 2SK2009 HIGH SPEED SWITCHING APPLICATIONS. ANALOG SWITCH APPLICATIONS. • H ig h In p u t Impedance. • Low G ate Threshold Voltage V th = 0.5~1.5V • Ex cellen t Sw itch in g Tim es


    OCR Scan     		PDF 2SK2009 06yt/s O-236MOD 2SK2009

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA 2SJ305 TOSHIBA FIELD EFFECT TRANSISTOR i HIGH SPEED SWITCHING APPLICATIONS. ANALOG APPLICATIONS. • High Input Impedance • Low Gate Threshold Voltage. • Excellent Switching Times. • • • Low Drain-Source ON Resistance. Small Package. Complementary to 2SK2009.


    OCR Scan     		PDF 2SJ305 2SK2009.

    619 sc-59

    Abstract: No abstract text available
    Text: SILICON N CHANNEL MOS TYPE 2SK2009 U nit in mm HIGH SPEED SW ITCHING APPLICATIONS. A N A L O G SWITCH APPLICATIONS. • • • • • • High Input Impedance. Low Gate Threshold Viltage Excellent Switching Times : Vt,h = 0.5~1.5V : ton = 0.06,us Typ.


    OCR Scan     		PDF 2SK2009 O-236MOD SC-59 619 sc-59

    2N3904 331 transistor

    Abstract: C549 transistor 2SK1227 transistor 1201 1203 1205 transistor C549 transistor Hand book 2N5551 2SC1815 2SK246 2n4401 331 02CZ27 transistor 737
    Text: 1 • ALPHANUMERICAL INDEX • Transistors Type No. Page Type No. Page Type No. Page Type No. Page * 2N3903 — 2SA1213 163 *2SC1815(L) — * 2SC2995 — * 2N3904 — 2SA1245 167 *2SC1923 — 2SC2996 266 * 2N3905 — 2SA1255 170 *2SC1959 — 2SC3011 272


    OCR Scan     		PDF 2N3903 2N3904 2N3905 2N3906 2N4123 2N4124 2N4125 2N4126 2N4401 2N4402 2N3904 331 transistor C549 transistor 2SK1227 transistor 1201 1203 1205 transistor C549 transistor Hand book 2N5551 2SC1815 2SK246 2n4401 331 02CZ27 transistor 737

    2sj305

    Abstract: 2SK2009
    Text: TO SH IBA 2SJ305 T O SH IB A FIELD EFFECT TR A N SIST O R SILICON P C H A N N E L M O S TYPE 2SJ305 Unit in mm HIGH SPEED SW IT C H IN G A PP LIC A T IO N S A N A L O G A PP LIC A TIO N S • • • High Input Impedance Low Gate Threshold Voltage. Excellent Switching Times.


    OCR Scan     		PDF 2SJ305 2SK2009. 06yt/s 2sj305 2SK2009