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    1.5A NPN TRANSISTOR DATA Search Results

    1.5A NPN TRANSISTOR DATA Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    CA3046 Rochester Electronics LLC CA3046 - General Purpose NPN Transistor Array Visit Rochester Electronics LLC Buy
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation

    1.5A NPN TRANSISTOR DATA Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SAR554P Datasheet PNP -1.5A -80V Middle Power Transistor lOutline Parameter Value VCEO IC -80V -1.5A MPT3 Base Collector Emitter 2SAR554P SC-62 <SOT-89> lFeatures 1) Suitable for Middle Power Driver 2) Complementary NPN Types : 2SCR554P 3) Low VCE(sat)


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    2SAR554P SC-62) OT-89> 2SCR554P -500mA/ -25mA) R1102A PDF

    D1918

    Abstract: No abstract text available
    Text: 2SD1918 Datasheet NPN 1.5A 160V Middle Power Transistor lOutline Parameter Value VCEO IC 160V 1.5A CPT3 Collector Base Emitter 2SD1918 SC-63 <SOT-428> lFeatures 1) Suitable for Middle Power Driver 2) Complementary PNP Types : 2SB1275 3) High voltage : VCEO=160V


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    2SD1918 SC-63) OT-428> 2SB1275 D1918 R1102A D1918 PDF

    B1275

    Abstract: No abstract text available
    Text: 2SB1275 Datasheet PNP -1.5A -160V Middle Power Transistor lOutline Parameter Value VCEO IC -160V -1.5A CPT3 Collector Base Emitter 2SB1275 SC-63 <SOT-428> lFeatures 1) Suitable for Middle Power Driver 2) Complementary NPN Types : 2SD1918 3) High voltage : VCEO= -160V


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    2SB1275 -160V -160V SC-63) OT-428> 2SD1918 B1275 B1275 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SD2702 / 2SD2674 Datasheet NPN 1.5A 12V Middle Power Transistor lOutline Parameter Value VCEO IC TUMT3 TSMT3 Collector Collector 12V 1.5A Base Base Emitter Emitter 2SD2674 SC-96 2SD2702 lFeatures 1) Suitable for Middle Power Driver 2) Complementary PNP Types : 2SB1732, 2SB1709


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    2SD2702 2SD2674 SC-96) 2SD2702 2SB1732, 2SB1709 500mA/25mA) PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SAR554P 2SAR554PFRA Datasheet PNP -1.5A -80V Middle Power Transistor AEC-Q101 Qualified lOutline Parameter Value VCEO IC -80V -1.5A MPT3 Base Collector Emitter 2SAR554PFRA 2SAR554P SC-62 <SOT-89> lFeatures 1) Suitable for Middle Power Driver 2) Complementary NPN Types : 2SCR554PFRA


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    2SAR554P 2SAR554PFRA AEC-Q101 SC-62) OT-89> 2SCR554PFRA 2SCR554P -500mA/ PDF

    Untitled

    Abstract: No abstract text available
    Text: BCP 54 NPN SILICON TRANSISTOR QUICK REFERENCE DATA Medium power NPN sIllcon transistor tn a mtntature plastic envelope Intended for use In drwer stages of audio amplifier telephony and general mdustnal appllcatlon T VCBO = 45 V VCEO = 45 V VEBO=5V ICM = 1.5A


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    -100mA -10mA Mar-97 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SCR554P 2SCR554PFRA Datasheet NPN 1.5A 80V Middle Power Transistor AEC-Q101 Qualified lOutline Parameter Value VCEO IC 80V 1.5A MPT3 Base Collector Emitter 2SCR554PFRA 2SCR554P SC-62 <SOT-89> lFeatures 1) Suitable for Middle Power Driver 2) Complementary PNP Types : 2SAR554PFRA


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    2SCR554P 2SCR554PFRA AEC-Q101 SC-62) OT-89> 2SAR554PFRA 2SAR554P 500mA/25mA) PDF

    2scr375

    Abstract: No abstract text available
    Text: 2SCR375P Datasheet NPN 1.5A 120V Middle Power Transistor lOutline Parameter Value VCEO IC 120V 1.5A MPT3 Base Collector Emitter 2SCR375P SC-62 <SOT-89> lFeatures 1) Suitable for Middle Power Driver 2) Low VCE(sat) VCE(sat)=0.30V(Max.) (IC/IB=800mA/80mA)


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    2SCR375P SC-62) OT-89> 800mA/80mA) R1102A 2scr375 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SCR554R Datasheet NPN 1.5A 80V Middle Power Transistor lOutline Parameter Value VCEO IC 80V 1.5A TSMT3 Collector Base Emitter 2SCR554R SC-96 lFeatures 1) Suitable for Middle Power Driver 2) Complementary PNP Types : 2SAR554R 3) Low VCE(sat) VCE(sat)=0.30V(Max.)


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    2SCR554R SC-96) 2SAR554R 500mA/25mA) R1102A PDF

    Untitled

    Abstract: No abstract text available
    Text: Ordering number : ENA1756A CPH6539 Bipolar Transistor http://onsemi.com 30V, 1.5A, Low VCE sat NPN Dual CPH6 Features • Small-sized package with two NPN transistors (CPH3215 equivalency) contained in one package • VCEO=30V, IC=1.5A • Low Collector-to-Emitter Saturation Voltage VCE(sat)=0.16V(typ.)@IC=0.75A


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    ENA1756A CPH6539 CPH3215 A1756-6/6 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SAR554R Datasheet PNP -1.5A -80V Middle Power Transistor lOutline Parameter Value VCEO IC -80V -1.5A TSMT3 Collector Base Emitter lFeatures 1 Suitable for Middle Power Driver 2) Complementary NPN Types : 2SCR554R 3) Low VCE sat) VCE(sat)= -0.4V(Max.) (IC/IB= -500mA/ -25mA)


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    2SAR554R 2SCR554R -25mA) SC-96) R1102A PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SD2662 Datasheet NPN 1.5A 30V Middle Power Transistor lOutline Parameter Value VCEO IC 30V 1.5A MPT3 Base Collector Emitter 2SD2662 SC-62 <SOT-89> lFeatures 1) Suitable for Middle Power Driver 2) Complementary PNP Types : 2SB1698 3) Low VCE(sat) VCE(sat)=0.35V(Max.)


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    2SD2662 SC-62) OT-89> 2SB1698 A/50mA) R1102A PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SCR554P Datasheet NPN 1.5A 80V Middle Power Transistor lOutline Parameter Value VCEO IC 80V 1.5A MPT3 Base Collector Emitter 2SCR554P SC-62 <SOT-89> lFeatures 1) Suitable for Middle Power Driver 2) Complementary PNP Types : 2SAR554P 3) Low VCE(sat) VCE(sat)=0.30V(Max.)


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    2SCR554P SC-62) OT-89> 2SAR554P 500mA/25mA) R1102A PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SB1698 Datasheet PNP -1.5A -30V Middle Power Transistor lOutline Parameter Value VCEO IC -30V -1.5A MPT3 Base Collector Emitter 2SB1698 SC-62 <SOT-89> lFeatures 1) Suitable for Middle Power Driver 2) Complementary NPN Types : 2SD2662 3) Low VCE(sat) VCE(sat)= -0.37V(Max.)


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    2SB1698 SC-62) OT-89> 2SD2662 -50mA) R1102A PDF

    Untitled

    Abstract: No abstract text available
    Text: CPH6539 Ordering number : ENA1756A SANYO Semiconductors DATA SHEET CPH6539 NPN Epitaxial Planar Silicon Transistor DC / DC Converter Applications Features • Small-sized package with two NPN transistors CPH3215 equivalency contained in one package • VCEO=30V, IC=1.5A


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    CPH6539 ENA1756A CPH3215 A1756-6/6 PDF

    CPH6539

    Abstract: marking 62712
    Text: CPH6539 Ordering number : ENA1756A SANYO Semiconductors DATA SHEET CPH6539 NPN Epitaxial Planar Silicon Transistor DC / DC Converter Applications Features • Small-sized package with two NPN transistors CPH3215 equivalency contained in one package • VCEO=30V, IC=1.5A


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    ENA1756A CPH6539 CPH3215 A1756-6/6 CPH6539 marking 62712 PDF

    transistor Bd 699

    Abstract: HBD139 HBD140
    Text: HI-SINCERITY Spec. No. : Preliminary Data Issued Date : 2001.08.01 Revised Date : 2001.08.24 Page No. : 1/3 MICROELECTRONICS CORP. HBD139 NPN POWER TRANSISTORS Description PNP power transistor in a TO-126 plastic package. NPN complements: HBD140 Features • High Current max. 1.5A


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    HBD139 O-126 HBD140 transistor Bd 699 HBD139 HBD140 PDF

    Untitled

    Abstract: No abstract text available
    Text: A Product Line of Diodes Incorporated ZXTD6717E6 ADVANCE INFORMATION COMPLEMENTARY 15V NPN & 12V PNP LOW SATURATION TRANSISTORS IN SOT26 Features & Benefits Mechanical Data NPN Transistor • BVCEO > 15V • IC = 1.5A Continuous Collector Current • Low Saturation Voltage 100mV max @ 1A


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    ZXTD6717E6 100mV -140mV AEC-Q10knowledge DS33653 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SA1507/2SC3902 Ordering number : EN2101E SANYO Semiconductors DATA SHEET 2SA1507/2SC3902 PNP / NPN Epitaxial Planar Silicon Transistor 160V / 1.5A Switching Applications Applications • Color TV audio output, converters, inverters Features • • • Large current capacity


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    2SA1507/2SC3902 EN2101E 2SA1507 PDF

    2SC1502

    Abstract: a1507 2SC 143 SANYO C3902 2SA1507 2SC3902 TO126ML 2sa1507 Sanyo Semiconductor transistor 160v 1.5a pnp
    Text: 2SA1507/2SC3902 Ordering number : EN2101E SANYO Semiconductors DATA SHEET 2SA1507/2SC3902 PNP / NPN Epitaxial Planar Silicon Transistor 160V / 1.5A Switching Applications Applications • Color TV audio output, converters, inverters Features • • • Large current capacity


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    EN2101E 2SA1507/2SC3902 2SA1507 2SC1502 a1507 2SC 143 SANYO C3902 2SA1507 2SC3902 TO126ML 2sa1507 Sanyo Semiconductor transistor 160v 1.5a pnp PDF

    Untitled

    Abstract: No abstract text available
    Text: Ordering number : EN6592A CPH6501 Bipolar Transistor http://onsemi.com 30V, 1.5A, Low VCE sat NPN Dual CPH6 Applications • Relay drivers, lamp drivers, motor drivers Features • • • Composite type with two NPN transistors contained in one package, facilitating high-density mounting


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    EN6592A CPH6501 CPH6501 CPH3215. PDF

    Untitled

    Abstract: No abstract text available
    Text: SEMICONDUCTOR KTC4419 TECHNICAL DATA TRIPLE DIFFUSED NPN TRANSISTOR SWITCHING REGULATOR APPLICATION. HIGH VOLTAGE SWITCHING APPLICATION. HIGH SPEED DC-DC CONVERTER APPLICATION. FEATURES ・Excellent Switching Times. : ton=1.0 S Max. , tf=0.5μS(Max.) at IC=1.5A.


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    KTC4419 PDF

    Untitled

    Abstract: No abstract text available
    Text: Ordering number:ENN1068C NPN Triple Diffused Planar Silicon Transistor 2SC3149 800V/1.5A Switching Regulator Applications Features Package Dimensions • High breakdown voltage VCBO≥900V . · High-speed switching. · Wide ASO. unit:mm 2010C [2SC3149] 10.2


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    ENN1068C 2SC3149 00V/1 VCBO900V) 2010C 2SC3149] PW300 Cycle10% PDF

    2sc3151

    Abstract: No abstract text available
    Text: Ordering number:ENN1070C NPN Triple Diffused Planar Silicon Transistor 2SC3151 800V/1.5A Switching Regulator Applications Features Package Dimensions • High breakdown voltage VCBO≥900V . · High-speed switching. · Wide ASO. unit:mm 2022A [2SC3151] 15.6


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    ENN1070C 2SC3151 00V/1 VCBO900V) 2SC3151] PW300 Cycle10% 2sc3151 PDF