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    1.5A POWER TRANSISTOR Search Results

    1.5A POWER TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    BLF Rochester Electronics BLF278 - VHF Push-Pull Power VDMOS Transistor Visit Rochester Electronics Buy
    RX1214B300YI Rochester Electronics LLC RX1214B300Y - Microwave Power Transistor (Ampleon Die) Visit Rochester Electronics LLC Buy
    BLF1043 Rochester Electronics LLC BLF1043 - UHF10W Power LDMOS Transistor (Ampleon Die) Visit Rochester Electronics LLC Buy
    ON5040 Rochester Electronics LLC ON5040 - RF Power Transistor (Ampleon Die) Visit Rochester Electronics LLC Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation

    1.5A POWER TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    tl494 inverter circuit

    Abstract: TC427CPA DS0026 power mosfet driver tl494 inverter tl494 dc to ac inverters tl494 dc to ac tl494 dc to ac inverter TC426 tl494 inverter converter data sheet tl494
    Text: 1.5A DUAL HIGH-SPEED POWER MOSFET DRIVERS TC426 TC426 TC427 TC427 TC428 TC428 1.5A DUAL HIGH-SPEED POWER MOSFET DRIVERS FEATURES GENERAL DESCRIPTION • High-Speed Switching CL = 1000pF . 30nsec ■ High Peak Output Current . 1.5A


    Original     		PDF TC426 TC427 TC428 1000pF) 30nsec tl494 inverter circuit TC427CPA DS0026 power mosfet driver tl494 inverter tl494 dc to ac inverters tl494 dc to ac tl494 dc to ac inverter TC426 tl494 inverter converter data sheet tl494

    GM66015

    Abstract: LT1086
    Text: GM66015 1.5A PRECISION LINEAR REGULATORS Power Management Features Description Adjustable or Fixed Output The GM66015 series of positive adjustable and fixed regu- Output Current of 1.5A lators are designed to provide 1.5A output with low dropout Dropout Voltage max. 1.1V @ 1.5A


    Original     		PDF GM66015 GM66015 LT1086 GM660TO-252 O-263 O-220 O-252

    Untitled

    Abstract: No abstract text available
    Text: 2SAR554P Datasheet PNP -1.5A -80V Middle Power Transistor lOutline Parameter Value VCEO IC -80V -1.5A MPT3 Base Collector Emitter 2SAR554P SC-62 <SOT-89> lFeatures 1) Suitable for Middle Power Driver 2) Complementary NPN Types : 2SCR554P 3) Low VCE(sat)


    Original     		PDF 2SAR554P SC-62) OT-89> 2SCR554P -500mA/ -25mA) R1102A

    D1918

    Abstract: No abstract text available
    Text: 2SD1918 Datasheet NPN 1.5A 160V Middle Power Transistor lOutline Parameter Value VCEO IC 160V 1.5A CPT3 Collector Base Emitter 2SD1918 SC-63 <SOT-428> lFeatures 1) Suitable for Middle Power Driver 2) Complementary PNP Types : 2SB1275 3) High voltage : VCEO=160V


    Original     		PDF 2SD1918 SC-63) OT-428> 2SB1275 D1918 R1102A D1918

    B1275

    Abstract: No abstract text available
    Text: 2SB1275 Datasheet PNP -1.5A -160V Middle Power Transistor lOutline Parameter Value VCEO IC -160V -1.5A CPT3 Collector Base Emitter 2SB1275 SC-63 <SOT-428> lFeatures 1) Suitable for Middle Power Driver 2) Complementary NPN Types : 2SD1918 3) High voltage : VCEO= -160V


    Original     		PDF 2SB1275 -160V -160V SC-63) OT-428> 2SD1918 B1275 B1275

    Untitled

    Abstract: No abstract text available
    Text: 2SD2702 / 2SD2674 Datasheet NPN 1.5A 12V Middle Power Transistor lOutline Parameter Value VCEO IC TUMT3 TSMT3 Collector Collector 12V 1.5A Base Base Emitter Emitter 2SD2674 SC-96 2SD2702 lFeatures 1) Suitable for Middle Power Driver 2) Complementary PNP Types : 2SB1732, 2SB1709


    Original     		PDF 2SD2702 2SD2674 SC-96) 2SD2702 2SB1732, 2SB1709 500mA/25mA)

    Untitled

    Abstract: No abstract text available
    Text: 2SB1732 / 2SB1709 Datasheet PNP -1.5A -12V Middle Power Transistor lOutline Parameter Value TUMT3 -12V -1.5A VCEO IC TSMT3 Collector Collector Base Base Emitter Emitter 2SB1709 SC-96 2SB1732 lFeatures 1) Suitable for Middle Power Driver 2) Complementary PNP Types : 2SD2702, 2SD2674


    Original     		PDF 2SB1732 2SB1709 SC-96) 2SB1732 2SD2702, 2SD2674 -500mA/ -25mA)

    Untitled

    Abstract: No abstract text available
    Text: 2SAR554P 2SAR554PFRA Datasheet PNP -1.5A -80V Middle Power Transistor AEC-Q101 Qualified lOutline Parameter Value VCEO IC -80V -1.5A MPT3 Base Collector Emitter 2SAR554PFRA 2SAR554P SC-62 <SOT-89> lFeatures 1) Suitable for Middle Power Driver 2) Complementary NPN Types : 2SCR554PFRA


    Original     		PDF 2SAR554P 2SAR554PFRA AEC-Q101 SC-62) OT-89> 2SCR554PFRA 2SCR554P -500mA/

    Untitled

    Abstract: No abstract text available
    Text: Advanced Power Electronics Corp. APE8970/A 1.5A HIGH OUTPUT CURRENT LDO REGULATOR FEATURES DESCRIPTIOON Input Voltage 2.6V to 5.5V Dropout Voltage is 450mV at 1.5A Output Current @ VOUT = 3.30V Guaranteed 1.5A Output Current Low Quiescent Current is 50µA Typ.


    Original     		PDF APE8970/A 450mV OT-223, O-263, O-252, OT-89 APE8970/A OT-89

    Untitled

    Abstract: No abstract text available
    Text: Advanced Power Electronics Corp. APE8970/A 1.5A HIGH OUTPUT CURRENT LDO REGULATOR FEATURES DESCRIPTIOON Input Voltage：2.6V to 5.5V Dropout Voltage is 450mV at 1.5A Output Current @ VOUT = 3.30V Guaranteed 1.5A Output Current Low Quiescent Current is 50µA Typ.


    Original     		PDF 450mV OT-223, O-263, O-252, OT-89 APE8970/A APE8970/A 8970XH-& OT-223 8970XK-&

    Untitled

    Abstract: No abstract text available
    Text: 2SCR554P 2SCR554PFRA Datasheet NPN 1.5A 80V Middle Power Transistor AEC-Q101 Qualified lOutline Parameter Value VCEO IC 80V 1.5A MPT3 Base Collector Emitter 2SCR554PFRA 2SCR554P SC-62 <SOT-89> lFeatures 1) Suitable for Middle Power Driver 2) Complementary PNP Types : 2SAR554PFRA


    Original     		PDF 2SCR554P 2SCR554PFRA AEC-Q101 SC-62) OT-89> 2SAR554PFRA 2SAR554P 500mA/25mA)

    APE8970

    Abstract: sot-223 code marking
    Text: Advanced Power Electronics Corp. APE8970/A 1.5A HIGH OUTPUT CURRENT LDO REGULATOR FEATURES DESCRIPTIOON Input Voltage：2.6V to 5.5V Dropout Voltage is 450mV at 1.5A Output Current @ VOUT = 3.30V Guaranteed 1.5A Output Current Low Quiescent Current is 50µA Typ.


    Original     		PDF 450mV OT-223, O-263, O-252, OT-89 APE8970/A APE8970/A 8970XH-& OT-223 8970XK-& APE8970 sot-223 code marking

    2scr375

    Abstract: No abstract text available
    Text: 2SCR375P Datasheet NPN 1.5A 120V Middle Power Transistor lOutline Parameter Value VCEO IC 120V 1.5A MPT3 Base Collector Emitter 2SCR375P SC-62 <SOT-89> lFeatures 1) Suitable for Middle Power Driver 2) Low VCE(sat) VCE(sat)=0.30V(Max.) (IC/IB=800mA/80mA)


    Original     		PDF 2SCR375P SC-62) OT-89> 800mA/80mA) R1102A 2scr375

    Untitled

    Abstract: No abstract text available
    Text: 2SCR554R Datasheet NPN 1.5A 80V Middle Power Transistor lOutline Parameter Value VCEO IC 80V 1.5A TSMT3 Collector Base Emitter 2SCR554R SC-96 lFeatures 1) Suitable for Middle Power Driver 2) Complementary PNP Types : 2SAR554R 3) Low VCE(sat) VCE(sat)=0.30V(Max.)


    Original     		PDF 2SCR554R SC-96) 2SAR554R 500mA/25mA) R1102A

    NPN transistor 8050

    Abstract: transistor 8050 transistor b 8050 npn 8050 8050 transistor D 8050
    Text: NPN TRANSISTOR 8050 1.5A Power Dissipation Pcm : 1.0W Collector Current Icm : 1.5A Collector-Base Voltage Vcbo: 45V MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS（Ta=25℃） PARAMETERS Collector-Emitter Breakdown Voltage Collector-Base Breakdown Voltage


    Original     		PDF 100uA 100urrent 1500mA, 500mA NPN transistor 8050 transistor 8050 transistor b 8050 npn 8050 8050 transistor D 8050

    Untitled

    Abstract: No abstract text available
    Text: 2SAR554R Datasheet PNP -1.5A -80V Middle Power Transistor lOutline Parameter Value VCEO IC -80V -1.5A TSMT3 Collector Base Emitter lFeatures 1 Suitable for Middle Power Driver 2) Complementary NPN Types : 2SCR554R 3) Low VCE sat) VCE(sat)= -0.4V(Max.) (IC/IB= -500ｍA/ -25mA)


    Original     		PDF 2SAR554R 2SCR554R -25mA) SC-96) R1102A

    Untitled

    Abstract: No abstract text available
    Text: 2SD2662 Datasheet NPN 1.5A 30V Middle Power Transistor lOutline Parameter Value VCEO IC 30V 1.5A MPT3 Base Collector Emitter 2SD2662 SC-62 <SOT-89> lFeatures 1) Suitable for Middle Power Driver 2) Complementary PNP Types : 2SB1698 3) Low VCE(sat) VCE(sat)=0.35V(Max.)


    Original     		PDF 2SD2662 SC-62) OT-89> 2SB1698 A/50mA) R1102A

    Untitled

    Abstract: No abstract text available
    Text: 2SCR554P Datasheet NPN 1.5A 80V Middle Power Transistor lOutline Parameter Value VCEO IC 80V 1.5A MPT3 Base Collector Emitter 2SCR554P SC-62 <SOT-89> lFeatures 1) Suitable for Middle Power Driver 2) Complementary PNP Types : 2SAR554P 3) Low VCE(sat) VCE(sat)=0.30V(Max.)


    Original     		PDF 2SCR554P SC-62) OT-89> 2SAR554P 500mA/25mA) R1102A

    Untitled

    Abstract: No abstract text available
    Text: 2SB1698 Datasheet PNP -1.5A -30V Middle Power Transistor lOutline Parameter Value VCEO IC -30V -1.5A MPT3 Base Collector Emitter 2SB1698 SC-62 <SOT-89> lFeatures 1) Suitable for Middle Power Driver 2) Complementary NPN Types : 2SD2662 3) Low VCE(sat) VCE(sat)= -0.37V(Max.)


    Original     		PDF 2SB1698 SC-62) OT-89> 2SD2662 -50mA) R1102A

    PNP transistor 8550

    Abstract: transistor 8550 8550 pnp transistor PNP 8550 8550 pnp he 8550 pnp transistor c 8550 transistor 8550 transistor
    Text: PNP TRANSISTOR 8550 -1.5A Power Dissipation: 1.0W Collector Current: -1.5A Collector-Base Voltage: -45V TO-92 MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS（Ta=25℃） PARAMETERS SYMBOL MIN TYP MAX UNIT CONDITION Collector-Emitter Breakdown Voltage BVceo


    Original     		PDF -100uA -100A -1500mA, -50mA PNP transistor 8550 transistor 8550 8550 pnp transistor PNP 8550 8550 pnp he 8550 pnp transistor c 8550 transistor 8550 transistor

    2SB884

    Abstract: 2SD1194
    Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Darlington Power Transistor DESCRIPTION •High DC Current Gain: hFE = 1500 Min @ IC= -1.5A ·Wide Area of Safe Operation ·Low Collector-Emitter Saturation Voltage: VCE(sat) = -1.5V(Max)@ IC= -1.5A


    Original     		PDF 2SD1194 2SB884 2SD1194

    IFR-410

    Abstract: IFU410 IFR410 irfu410
    Text: IRFR410, IRFU410 S E M I C O N D U C T O R 1.5A, 500V, 7.0 Ohm, N-Channel Power MOSFETs January 1998 Features Description • 1.5A, 500V These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a


    Original     		PDF IRFR410, IRFU410 TA17445. IFR-410 IFU410 IFR410 irfu410

    d03314

    Abstract: LT3570
    Text: LT3570 1.5A Buck Converter, 1.5A Boost Converter and LDO Controller DESCRIPTION FEATURES n n n n n n n n The LT 3570 is a buck and boost converter with internal power switches and LDO controller. Each converter is designed with a 1.5A current limit and an input range


    Original     		PDF LT3570 10-Pin DFN10 OT-23 QFN38 3570f d03314

    2SD864

    Abstract: 2SB765
    Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Darlington Power Transistor DESCRIPTION •High DC Current Gain: hFE = 1000 Min @ IC= -1.5A ·Collector-Emitter Breakdown Voltage: V(BR)CEO = -120V(Min) ·Low Collector-Emitter Saturation Voltage: VCE(sat) = -1.5V(Max)@ IC= -1.5A


    Original     		PDF -120V 2SD864 -30mA -120V, -100V, 2SD864 2SB765