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    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: A2T26H160-24S Rev. 0, 8/2014 RF Power LDMOS Transistor N-Channel Enhancement-Mode Lateral MOSFET This 28 W asymmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 2496 to


    Original     		PDF A2T26H160--24S A2T26H160-24SR3

    RO4350

    Abstract: RO4350B transistor 0882 docsis V 8623 transistor 32QAM CGH55015F1 2J302 CGH5501 CGH55015
    Text: CGH55015F1 / CGH55015P1 15 W, 5500-5800 MHz, GaN HEMT for WiMAX Cree’s CGH55015F1/CGH55015P1 is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH55015F1/


    Original     		PDF CGH55015F1 CGH55015P1 CGH55015F1/CGH55015P1 CGH55015F1/ CGH55015P1 CGH5501 CGH55 015F1 RO4350 RO4350B transistor 0882 docsis V 8623 transistor 32QAM 2J302 CGH5501 CGH55015

    CGH55015F

    Abstract: transistor 0882 32QAM cgh55015 256QAM CGH5501 CGH55015F-TB CGH55015-TB VCGH55015F RO4350B
    Text: CGH55015F 15 W, 5500-5800 MHz, GaN HEMT for WiMAX Cree’s CGH55015F is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH55015F ideal for 5.5-5.8 GHz WiMAX and


    Original     		PDF CGH55015F CGH55015F CGH5501 CGH55015 transistor 0882 32QAM 256QAM CGH5501 CGH55015F-TB CGH55015-TB VCGH55015F RO4350B

    Untitled

    Abstract: No abstract text available
    Text: Ultra High Dynamic Range Monolithic Amplifier 50Ω PHA-1+ 0.05 to 6 GHz The Big Deal FREE X-Parameters* • Ultra High IP3 • Broadband High Dynamic Range without external Matching Components • May be used as a replacement to WJ AH1a,b SOT-89 PACKAGE ☛ LTE Performance


    Original     		PDF OT-89

    Driver amplifier SOT-89

    Abstract: MARKING AH1A pha1
    Text: Ultra High Dynamic Range Monolithic Amplifier 50Ω PHA-1+ 0.05 to 6 GHz The Big Deal • Ultra High IP3 • Broadband High Dynamic Range without external Matching Components • May be used as a replacement to WJ AH1a,b SOT-89 PACKAGE ☛ LTE Performance


    Original     		PDF OT-89 Driver amplifier SOT-89 MARKING AH1A pha1

    Untitled

    Abstract: No abstract text available
    Text: Ultra High Dynamic Range Monolithic Ampli er 50 PHA-1+ 0.05 to 6 GHz The Big Deal FREE X-Parameters* •฀฀Ultra฀High฀IP3 •฀ Broadband฀High฀Dynamic฀Range฀without฀ ฀ external฀Matching฀Components •฀ May฀be฀used฀as฀a฀replacement฀to฀WJ฀AH1a,b


    Original     		PDF OT-89à

    PHA-1

    Abstract: wj ah1 AH1A TB313
    Text: Ultra High Dynamic Range Monolithic Amplifier 50Ω PHA-1+ 0.05 to 6 GHz The Big Deal • Ultra High IP3 • Broadband High Dynamic Range without external Matching Components • May be used as a replacement to WJ AH1a,b SOT-89 PACKAGE ☛ LTE Performance


    Original     		PDF OT-89 PHA-1 wj ah1 AH1A TB313

    Untitled

    Abstract: No abstract text available
    Text: Ultra High Dynamic Range Monolithic Amplifier 50Ω PHA-1+ 0.05 to 6 GHz The Big Deal FREE X-Parameters* • Ultra High IP3 • Broadband High Dynamic Range without external Matching Components • May be used as a replacement to WJ AH1a,b SOT-89 PACKAGE ☛ LTE Performance


    Original     		PDF OT-89

    CGH55015F1

    Abstract: No abstract text available
    Text: CGH55015F1 / CGH55015P1 15 W, 5500-5800 MHz, GaN HEMT for WiMAX Cree’s CGH55015F1/CGH55015P1 is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH55015F1/CGH55015P1


    Original     		PDF CGH55015F1 CGH55015P1 CGH55015F1/CGH55015P1 CGH55015F1/ CGH55015P1 CGH5501 CGH55 015F1

    CGH55015F1

    Abstract: CGH55015P1 CGH5501 CGH55015 CGH55015-TB VCGH55015F
    Text: CGH55015F1 / CGH55015P1 15 W, 5500-5800 MHz, GaN HEMT for WiMAX Cree’s CGH55015F1/CGH55015P1 is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH55015F1/CGH55015P1


    Original     		PDF CGH55015F1 CGH55015P1 CGH55015F1/CGH55015P1 CGH55015F1/CGH55015P1 CGH55015F1/ CGH55015P1 CGH5501 CGH55 015F1 CGH5501 CGH55015 CGH55015-TB VCGH55015F

    Untitled

    Abstract: No abstract text available
    Text: CGH55015F1 / CGH55015P1 15 W, 5500-5800 MHz, GaN HEMT for WiMAX Cree’s CGH55015F1/CGH55015P1 is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH55015F1/CGH55015P1


    Original     		PDF CGH55015F1 CGH55015P1 CGH55015F1/CGH55015P1 CGH55015F1/CGH55015P1 CGH55015F1/ CGH55015P1 CGH5501 CGH55 015F1

    17975

    Abstract: CGH55015F1 cgh55015 CGH5501 CGH55015P1 CGH55015-TB VCGH55015F 2J302
    Text: CGH55015F1 / CGH55015P1 15 W, 5500-5800 MHz, GaN HEMT for WiMAX Cree’s CGH55015F1/CGH55015P1 is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH55015F1/


    Original     		PDF CGH55015F1 CGH55015P1 CGH55015F1/CGH55015P1 CGH55015F1/ CGH55015P1 CGH5501 CGH55 015F1 17975 cgh55015 CGH5501 CGH55015-TB VCGH55015F 2J302

    Untitled

    Abstract: No abstract text available
    Text: CGH55015F1 / CGH55015P1 15 W, 5500-5800 MHz, GaN HEMT for WiMAX Cree’s CGH55015F1/CGH55015P1 is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH55015F1/CGH55015P1


    Original     		PDF CGH55015F1 CGH55015P1 CGH55015F1/CGH55015P1 CGH55015F1/ CGH55015P1 CGH5501 CGH55 015F1

    Transistor J550

    Abstract: j584 transistor
    Text: Document Number: AFT26H200W03S Rev. 0, 8/2013 Freescale Semiconductor Technical Data RF Power LDMOS Transistor N−Channel Enhancement−Mode Lateral MOSFET This 45 watt asymmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications requiring very wide instantaneous


    Original     		PDF AFT26H200W03S AFT26H200W03SR6 Transistor J550 j584 transistor

    PL-255

    Abstract: GVA-84 Amplifier 1W SOT-89
    Text: 5 Volt-Surface Mount Monolithic Amplifier DC-6 GHz Product Features • High Gain, 24 dB typ. at 100 MHz • High IP3, 37 dBm typ. at 100 MHz • High Pout, P1dB 20.5 dBm typ. at 100 MHz • Fixed 5V operation • Unconditionally stable • Transient protected


    Original     		PDF GVA-84+ DF782 2002/95/EC) C/85RH AS9100 PL-255 GVA-84 Amplifier 1W SOT-89

    Untitled

    Abstract: No abstract text available
    Text: 5 Volt-Surface Mount Monolithic Ampli er DC-7 GHz Product Features •฀High฀Gain,฀24฀dB฀typ.฀at฀100฀MHz •฀High฀Pout,฀P1dB฀20.5฀dBm฀typ.฀at฀100฀MHz •฀High฀IP3,฀37฀dBm฀typ.฀at฀100฀MHz •฀Ruggedized฀design


    Original     		PDF GVA-84+ DF782

    Untitled

    Abstract: No abstract text available
    Text: 5 Volt-Surface Mount Monolithic Amplifier DC-7 GHz Product Features • High Gain, 24 dB typ. at 100 MHz • High Pout, P1dB 20.5 dBm typ. at 100 MHz • High IP3, 37 dBm typ. at 100 MHz • Ruggedized design • Fixed 5V operation • Unconditionally stable


    Original     		PDF GVA-84+ DF782

    Untitled

    Abstract: No abstract text available
    Text: 5 Volt-Surface Mount Monolithic Amplifier DC-7 GHz Product Features • High Gain, 24 dB typ. at 100 MHz • High Pout, P1dB 20.5 dBm typ. at 100 MHz • High IP3, 37 dBm typ. at 100 MHz • Ruggedized design • Fixed 5V operation • Unconditionally stable


    Original     		PDF GVA-84+ DF782

    D260-4118-0000

    Abstract: MRFE6VS25L MRFE6VS25GNR1 transistor J128 2422D 21-201-J ATC100B2R7BT500XT crcw12065k60f avx c0805c103k5rac MRFE6VS25NR1
    Text: Freescale Semiconductor Technical Data Document Number: MRFE6VS25N Rev. 1, 12/2012 RF Power LDMOS Transistors High Ruggedness N-Channel Enhancement-Mode Lateral MOSFETs RF power transistors designed for both narrowband and broadband ISM, broadcast and aerospace applications operating at frequencies from 1.8 to


    Original     		PDF MRFE6VS25N MRFE6VS25NR1 MRFE6VS25GNR1 MRFE6VS25N D260-4118-0000 MRFE6VS25L MRFE6VS25GNR1 transistor J128 2422D 21-201-J ATC100B2R7BT500XT crcw12065k60f avx c0805c103k5rac

    MARKING V84

    Abstract: BLK-18 DF782 GVA-84 N5242A ZX85-12G-S marking 66 mmic sot-89 TB-410-84
    Text: 5 Volt-Surface Mount Monolithic Amplifier DC-7 GHz Product Features • High Gain, 24 dB typ. at 100 MHz • High Pout, P1dB 20.5 dBm typ. at 100 MHz • High IP3, 37 dBm typ. at 100 MHz • Ruggedized design • Fixed 5V operation • Unconditionally stable


    Original     		PDF GVA-84+ DF782 2002/95/EC) MARKING V84 BLK-18 DF782 GVA-84 N5242A ZX85-12G-S marking 66 mmic sot-89 TB-410-84

    Untitled

    Abstract: No abstract text available
    Text: 5 Volt-Surface Mount Monolithic Amplifier DC-7 GHz Product Features • High Gain, 24 dB typ. at 100 MHz • High Pout, P1dB 20.5 dBm typ. at 100 MHz • High IP3, 37 dBm typ. at 100 MHz • Ruggedized design • Fixed 5V operation • Unconditionally stable


    Original     		PDF GVA-84+ DF782 2002/95/EC)

    GVA-84

    Abstract: No abstract text available
    Text: 5 Volt-Surface Mount Monolithic Amplifier DC-7 GHz Product Features • High Gain, 24 dB typ. at 100 MHz • High Pout, P1dB 20.5 dBm typ. at 100 MHz • High IP3, 37 dBm typ. at 100 MHz • Ruggedized design • Fixed 5V operation • Unconditionally stable


    Original     		PDF GVA-84+ DF782 2002/95/EC) GVA-84

    Untitled

    Abstract: No abstract text available
    Text: 5 Volt-Surface Mount Monolithic Amplifier DC-7 GHz Product Features • High Gain, 24 dB typ. at 100 MHz • High Pout, P1dB 20.5 dBm typ. at 100 MHz • High IP3, 37 dBm typ. at 100 MHz • Ruggedized design • Fixed 5V operation • Unconditionally stable


    Original     		PDF GVA-84+ DF782 2002/95/EC)

    Untitled

    Abstract: No abstract text available
    Text: 5 Volt-Surface Mount Monolithic Amplifier DC-7 GHz Product Features • High Gain, 24 dB typ. at 100 MHz • High Pout, P1dB 20.5 dBm typ. at 100 MHz • High IP3, 37 dBm typ. at 100 MHz • Ruggedized design • Fixed 5V operation • Unconditionally stable


    Original     		PDF GVA-84+ DF782 2002/95/EC)