Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    CGH5501 Search Results

    SF Impression Pixel

    CGH5501 Price and Stock

    MACOM CGH55015F2

    RF MOSFET HEMT 28V 440166
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey CGH55015F2 Tray 61 1
    • 1 $130.29
    • 10 $106.46
    • 100 $130.29
    • 1000 $130.29
    • 10000 $130.29
    		Buy Now
    Mouser Electronics CGH55015F2 49
    • 1 $122.7
    • 10 $115.07
    • 100 $109.81
    • 1000 $109.81
    • 10000 $109.81
    		Buy Now
    Richardson RFPD CGH55015F2 10 1
    • 1 $154.26
    • 10 $154.26
    • 100 $154.26
    • 1000 $154.26
    • 10000 $154.26
    		Buy Now

    MACOM CGH55015F2-AMP

    CGH55015F2 DEV BOARD WITH HEMT
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey CGH55015F2-AMP Box 2 1
    • 1 $752.15
    • 10 $752.15
    • 100 $752.15
    • 1000 $752.15
    • 10000 $752.15
    		Buy Now
    Richardson RFPD CGH55015F2-AMP 1
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    		Get Quote

    TT Electronics Resistors CGH-5-50-1005-J

    RES,THICK FILM,10MOHMS,20KWV,5+/-% TOL,-50,50PPM-TC
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components CGH-5-50-1005-J 72
    • 1 $9
    • 10 $4.5
    • 100 $3.9
    • 1000 $3.9
    • 10000 $3.9
    		Buy Now

    CGH5501 Datasheets (5)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    CGH55015F1 Cree/Wolfspeed Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RF - RF MOSFET HEMT 28V 440196 Original PDF
    CGH55015F2 Cree RF FETs, Discrete Semiconductor Products, FET RF HEMT 5.65GHZ 84V 440166 Original PDF
    CGH55015F2-AMP Wolfspeed CGH55015F2 DEV BOARD WITH HEMT Original PDF
    CGH55015F2-AMP Wolfspeed CGH55015F2 DEV BOARD WITH HEMT Original PDF
    CGH55015F-TB Cree RF Evaluation and Development Kits, Boards, RF/IF and RFID, BOARD DEMO AMP CIRCUIT CGH55015F Original PDF

    CGH5501 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    RO4350

    Abstract: RO4350B transistor 0882 docsis V 8623 transistor 32QAM CGH55015F1 2J302 CGH5501 CGH55015
    Text: CGH55015F1 / CGH55015P1 15 W, 5500-5800 MHz, GaN HEMT for WiMAX Cree’s CGH55015F1/CGH55015P1 is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH55015F1/


    Original     		CGH55015F1 CGH55015P1 CGH55015F1/CGH55015P1 CGH55015F1/ CGH55015P1 CGH5501 CGH55 015F1 RO4350 RO4350B transistor 0882 docsis V 8623 transistor 32QAM 2J302 CGH5501 CGH55015 PDF

    CGH55015F2

    Abstract: CGH5501 smd transistor s2p CGH55015P2 CGH55015-TB cgh55 hemt .s2p RO4350B max torque CGH55015 CGH55015F
    Text: CGH55015F2 / CGH55015P2 10 W, C-band, Unmatched, GaN HEMT Cree’s CGH55015F2/CGH55015P2 is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH55015F2/


    Original     		CGH55015F2 CGH55015P2 CGH55015F2/CGH55015P2 CGH55015F2/ CGH55015P2 CGH5501 CGH55 015F2 CGH5501 smd transistor s2p CGH55015-TB cgh55 hemt .s2p RO4350B max torque CGH55015 CGH55015F PDF

    CGH55015F2

    Abstract: transistor 9014 smd 9014 SMD CGH40010 CGH5501 CGH55015 CGH55015F CGH55015P2 CGH55015-TB
    Text: CGH55015F2 / CGH55015P2 10 W, C-band, Unmatched, GaN HEMT Cree’s CGH55015F2/CGH55015P2 is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH55015F2/


    Original     		CGH55015F2 CGH55015P2 CGH55015F2/CGH55015P2 CGH55015F2/ CGH55015P2 CGH5501 CGH55 015F2 transistor 9014 smd 9014 SMD CGH40010 CGH5501 CGH55015 CGH55015F CGH55015-TB PDF

    CGH55015F1

    Abstract: No abstract text available
    Text: CGH55015F1 / CGH55015P1 15 W, 5500-5800 MHz, GaN HEMT for WiMAX Cree’s CGH55015F1/CGH55015P1 is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH55015F1/CGH55015P1


    Original     		CGH55015F1 CGH55015P1 CGH55015F1/CGH55015P1 CGH55015F1/ CGH55015P1 CGH5501 CGH55 015F1 PDF

    Untitled

    Abstract: No abstract text available
    Text: CGH55015F1 / CGH55015P1 15 W, 5500-5800 MHz, GaN HEMT for WiMAX Cree’s CGH55015F1/CGH55015P1 is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH55015F1/CGH55015P1


    Original     		CGH55015F1 CGH55015P1 CGH55015F1/CGH55015P1 CGH55015F1/ CGH55015P1 CGH5501 CGH55 015F1 PDF

    transistor 15478

    Abstract: TRANSISTOR SMD 9014 transistor 9014 smd CGH55015F2 data sheet transistor 9014
    Text: CGH55015F2 / CGH55015P2 10 W, C-band, Unmatched, GaN HEMT Cree’s CGH55015F2/CGH55015P2 is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH55015F2/


    Original     		CGH55015F2 CGH55015P2 CGH55015F2/CGH55015P2 CGH55015F2/ CGH55015P2 CGH5501 CGH55 015F2 transistor 15478 TRANSISTOR SMD 9014 transistor 9014 smd data sheet transistor 9014 PDF

    CGH55015F1

    Abstract: CGH55015P1 CGH5501 CGH55015 CGH55015-TB VCGH55015F
    Text: CGH55015F1 / CGH55015P1 15 W, 5500-5800 MHz, GaN HEMT for WiMAX Cree’s CGH55015F1/CGH55015P1 is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH55015F1/CGH55015P1


    Original     		CGH55015F1 CGH55015P1 CGH55015F1/CGH55015P1 CGH55015F1/CGH55015P1 CGH55015F1/ CGH55015P1 CGH5501 CGH55 015F1 CGH5501 CGH55015 CGH55015-TB VCGH55015F PDF

    Untitled

    Abstract: No abstract text available
    Text: CGH55015F1 / CGH55015P1 15 W, 5500-5800 MHz, GaN HEMT for WiMAX Cree’s CGH55015F1/CGH55015P1 is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH55015F1/CGH55015P1


    Original     		CGH55015F1 CGH55015P1 CGH55015F1/CGH55015P1 CGH55015F1/CGH55015P1 CGH55015F1/ CGH55015P1 CGH5501 CGH55 015F1 PDF

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY CGH55015 15 W, 5500-5800 MHz, GaN HEMT for WiMAX Cree’s CGH55015 is a gallium nitride GaN high electron mobility transistor designed specifically for 802.16-2004 WiMAX Fixed Access applications. GaN HEMTs offer high efficiency, high gain and wide bandwidth capabilities,


    Original     		CGH55015 CGH55015 CGH5501 CGH55015F PDF

    CGH55015F

    Abstract: transistor 0882 32QAM cgh55015 256QAM CGH5501 CGH55015F-TB CGH55015-TB VCGH55015F RO4350B
    Text: CGH55015F 15 W, 5500-5800 MHz, GaN HEMT for WiMAX Cree’s CGH55015F is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH55015F ideal for 5.5-5.8 GHz WiMAX and


    Original     		CGH55015F CGH55015F CGH5501 CGH55015 transistor 0882 32QAM 256QAM CGH5501 CGH55015F-TB CGH55015-TB VCGH55015F RO4350B PDF

    17975

    Abstract: CGH55015F1 cgh55015 CGH5501 CGH55015P1 CGH55015-TB VCGH55015F 2J302
    Text: CGH55015F1 / CGH55015P1 15 W, 5500-5800 MHz, GaN HEMT for WiMAX Cree’s CGH55015F1/CGH55015P1 is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH55015F1/


    Original     		CGH55015F1 CGH55015P1 CGH55015F1/CGH55015P1 CGH55015F1/ CGH55015P1 CGH5501 CGH55 015F1 17975 cgh55015 CGH5501 CGH55015-TB VCGH55015F 2J302 PDF

    TRANSISTOR SMD 9014

    Abstract: CGH40010F transistor 9014 smd 9014 transistor smd CGH55015F2 CGH5501 CGH55015 CGH55015F CGH55015P2 CGH55015-TB
    Text: CGH55015F2 / CGH55015P2 10 W, C-band, Unmatched, GaN HEMT Cree’s CGH55015F2/CGH55015P2 is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH55015F2/


    Original     		CGH55015F2 CGH55015P2 CGH55015F2/CGH55015P2 CGH55015F2/ CGH55015P2 CGH5501 CGH55 015F2 TRANSISTOR SMD 9014 CGH40010F transistor 9014 smd 9014 transistor smd CGH5501 CGH55015 CGH55015F CGH55015-TB PDF

    CGH09120F

    Abstract: CGH25120F CDPA21480 CGH27060F ofdm predistortion CGH55030F 440117 CGH21120F CGH21240F CGH27015F
    Text: Gallium Nitride GaN HEMT Transistors for BTS Applications Cree’s Doherty CDPA21480, performance. CGH21240F demonstration provides amplifier innovative The amplifier devices with uses digital two CDPA21480 Spectrum at 2.11, 2.14 & 2.17 GHz PAVE = 49 dBm, 2-Carrier WCDMA, PAR = 7.5 dB with CFR


    Original     		CDPA21480, CGH21240F CDPA21480 CGH09120F CGH25120F CGH27060F ofdm predistortion CGH55030F 440117 CGH21120F CGH21240F CGH27015F PDF

    EIA 549 Class 130B transformer

    Abstract: mcf 300.04 capacitor 225 35k 844 SMD av 1.40.00 mkt x2 .01uf NTC 20K honeywell 1000 rpm dc motor 12v 100watt BO 680Y clarostat POTENTIOMETER 73JA SMD MARKING CODE 503b 03028BR
    Text: ND3% BASE1 XXXX0118-0396-1-P 396 TSQ: 3001 CMS: CMS-USM TS host OP: NN COMP: 20-07-11 Hour: 11:09 TS:TS date TS time CAPACITORS Find Datasheets Online CERAMIC CAPACITORS MULTILAYER CERAMIC CAPACITORS - 0.5pF TO 82,000pF 2 MULTILAYER CERAMIC CAPACITORS - 0.5pF TO 82,000pF CONT.


    Original     		000pF 000pF 0201ZD103KAT2A 0201ZC103KAT2A 0201YC101KAT2A 0201YC271KAT2A 0201YC471KAT2A 02013A1R0CAT2A 02013A4R7CAT2A 02013A100JAT2A EIA 549 Class 130B transformer mcf 300.04 capacitor 225 35k 844 SMD av 1.40.00 mkt x2 .01uf NTC 20K honeywell 1000 rpm dc motor 12v 100watt BO 680Y clarostat POTENTIOMETER 73JA SMD MARKING CODE 503b 03028BR PDF