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    CGH40010 Search Results

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    CGH40010 Price and Stock

    MACOM CGH40010F-AMP

    CGH40010F DEV BOARD WITH HEMT
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey CGH40010F-AMP Box 2 1
    • 1 $974.18
    • 10 $974.18
    • 100 $974.18
    • 1000 $974.18
    • 10000 $974.18
    		Buy Now
    Richardson RFPD CGH40010F-AMP 1
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
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    MACOM CGH40010P

    RF MOSFET HEMT 28V 440196
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey CGH40010P Tray 250
    • 1 -
    • 10 -
    • 100 -
    • 1000 $65.225
    • 10000 $65.225
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    Mouser Electronics CGH40010P 174
    • 1 $91.61
    • 10 $83.63
    • 100 $75.52
    • 1000 $75.52
    • 10000 $75.52
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    Richardson RFPD CGH40010P 1
    • 1 $125.41
    • 10 $125.41
    • 100 $125.41
    • 1000 $125.41
    • 10000 $125.41
    		Buy Now

    MACOM CGH40010F

    RF MOSFET HEMT 28V 440166
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey CGH40010F Tray 1
    • 1 $97.57
    • 10 $78.427
    • 100 $97.57
    • 1000 $97.57
    • 10000 $97.57
    		Buy Now
    Mouser Electronics CGH40010F
    • 1 $87.63
    • 10 $76.79
    • 100 $70.08
    • 1000 $70.08
    • 10000 $70.08
    		Get Quote
    Richardson RFPD CGH40010F 1
    • 1 $125.41
    • 10 $125.41
    • 100 $125.41
    • 1000 $125.41
    • 10000 $125.41
    		Buy Now

    CGH40010 Datasheets (5)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    CGH40010 Cree 10 W, RF Power GaN HEMT Original PDF
    CGH40010F Cree RF FETs, Discrete Semiconductor Products, TRANS 10W RF GAN HEMT 440166 PKG Original PDF
    CGH40010F-AMP Wolfspeed CGH40010F DEV BOARD WITH HEMT Original PDF
    CGH40010F-TB Cree RF Evaluation and Development Kits, Boards, RF/IF and RFID, BOARD DEMO AMP CIRCUIT CGH40010 Original PDF
    CGH40010P Cree RF FETs, Discrete Semiconductor Products, TRANS 10W RF GAN HEMT 440196 Original PDF

    CGH40010 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    str w 6554 a

    Abstract: STR 6554 a
    Text: CGH40010 10 W, RF Power GaN HEMT Cree’s CGH40010 is an unmatched, gallium nitride GaN high electron mobility transistor (HEMT). The CGH40010, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer


    Original     		PDF CGH40010 CGH40010 CGH40010, CGH40 40010P str w 6554 a STR 6554 a

    Cree Microwave

    Abstract: No abstract text available
    Text: PRELIMINARY CGH40010 10 W, RF Power GaN HEMT Cree’s CGH40010 is an unmatched, gallium nitride GaN high electron mobility transistor (HEMT). The CGH40010, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer


    Original     		PDF CGH40010 CGH40010 CGH40010, CGH40 40010P Cree Microwave

    STR W 5753 a

    Abstract: CGH40010 str 5753 str w 5753 8891 8952 Cree Microwave 10UF 470PF CGH40010F
    Text: CGH40010 10 W, RF Power GaN HEMT Cree’s CGH40010 is an unmatched, gallium nitride GaN high electron mobility transistor (HEMT). The CGH40010, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer


    Original     		PDF CGH40010 CGH40010 CGH40010, CGH40 40010P STR W 5753 a str 5753 str w 5753 8891 8952 Cree Microwave 10UF 470PF CGH40010F

    str w 6554 a

    Abstract: CGH40010 Large Signal Model CGH40010F str w 6554 CGH40015 CGH40015F STR 6554 a CGH40010P str f 6554 str 6808
    Text: CGH40010 10 W, RF Power GaN HEMT Cree’s CGH40010 is an unmatched, gallium nitride GaN high electron mobility transistor (HEMT). The CGH40010, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer


    Original     		PDF CGH40010 CGH40010 CGH40010, CGH40 40010P str w 6554 a CGH40010 Large Signal Model CGH40010F str w 6554 CGH40015 CGH40015F STR 6554 a CGH40010P str f 6554 str 6808

    CGH40010

    Abstract: CGH40010F 10UF 470PF CGH40010-TB
    Text: PRELIMINARY CGH40010 10 W, RF Power GaN HEMT Cree’s CGH40010 is an unmatched, gallium nitride GaN high electron mobility transistor (HEMT). The CGH40010, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer


    Original     		PDF CGH40010 CGH40010 CGH40010, CGH40 40010P CGH40010F 10UF 470PF CGH40010-TB

    str 8656

    Abstract: str g 8656 str 6353 CGH40010 str 6308 8627 8656 STR A 6169 10UF 470PF
    Text: PRELIMINARY CGH40010 10 W, RF Power GaN HEMT Cree’s CGH40010 is an unmatched, gallium nitride GaN high electron mobility transistor (HEMT). The CGH40010, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer


    Original     		PDF CGH40010 CGH40010 CGH40010, CGH40 40010P str 8656 str g 8656 str 6353 str 6308 8627 8656 STR A 6169 10UF 470PF

    CGH40010F

    Abstract: str w 6554 a CGH40015F CGH40010 Large Signal Model transistor s2p str w 6554 CGH40015 str 6554 CGH40010 JESD22
    Text: CGH40010 10 W, RF Power GaN HEMT Cree’s CGH40010 is an unmatched, gallium nitride GaN high electron mobility transistor (HEMT). The CGH40010, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer


    Original     		PDF CGH40010 CGH40010 CGH40010, CGH40 40010P CGH40010F str w 6554 a CGH40015F CGH40010 Large Signal Model transistor s2p str w 6554 CGH40015 str 6554 JESD22

    CGH40010F

    Abstract: str w 6554 CGH40010 CGH40010 Large Signal Model CGH40010-TB str w 6554 a transistor RF S-parameters str f 6554 STR 6554 a CGH40010P
    Text: CGH40010 10 W, RF Power GaN HEMT Cree’s CGH40010 is an unmatched, gallium nitride GaN high electron mobility transistor (HEMT). The CGH40010, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer


    Original     		PDF CGH40010 CGH40010 CGH40010, CGH40 40010P CGH40010F str w 6554 CGH40010 Large Signal Model CGH40010-TB str w 6554 a transistor RF S-parameters str f 6554 STR 6554 a CGH40010P

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY CGH40010 10 W, RF Power GaN HEMT Cree’s CGH40010 is an unmatched, gallium nitride GaN high electron mobility transistor (HEMT). The CGH40010, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer


    Original     		PDF CGH40010 CGH40010 CGH40010, CGH40 40010P

    schematic diagram atx Power supply 500w

    Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
    Text: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455


    Original     		PDF P462-ND P463-ND LNG295LFCP2U LNG395MFTP5U US2011) schematic diagram atx Power supply 500w pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS

    CGH27015

    Abstract: CGH27015F CGH27015-TB CGH40010F JESD22 cgh40010 18pF
    Text: CGH27015 15 W, 28V, GaN HEMT for Linear Communications ranging from VHF to 3 GHz Cree’s CGH27015 is a gallium nitride GaN high electron mobility transistor designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH27015 ideal for VHF, Comms, 3G, 4G, LTE,


    Original     		PDF CGH27015 CGH27015 CGH2701 27015P CGH27015F CGH27015-TB CGH40010F JESD22 cgh40010 18pF

    CGH40010

    Abstract: No abstract text available
    Text: Microwave Office Success Story Michael Boers, Ph.D. Student, Wins IEEE MTT-S Power Amplifier Competition, 85% PAE Achieved with Microwave Office Customer Background Michael Boers received his Bachelor of Electrical Engineering degree from the University of Sydney in 2005. Since 2006, he has been working towards


    Original     		PDF

    GaN ADS

    Abstract: CGH40010 Large Signal Model CGH40010 AlGaN/GaN HEMTs CGH40010 ads Class E amplifier class E power amplifier GaN amplifier class d amplifier theory transistor 40361
    Text: A High Power, High Efficiency Amplifier using GaN HEMT Bumjin Kim, D. Derickson, and C. Sun California Polytechnic State University –Electrical Engineering Department San Luis Obispo, CA 93407 csun@calpoly.edu, 805-756-2004 Abstract—A class B and a class F power amplifier are


    Original     		PDF

    CGH55015F2

    Abstract: CGH5501 smd transistor s2p CGH55015P2 CGH55015-TB cgh55 hemt .s2p RO4350B max torque CGH55015 CGH55015F
    Text: CGH55015F2 / CGH55015P2 10 W, C-band, Unmatched, GaN HEMT Cree’s CGH55015F2/CGH55015P2 is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH55015F2/


    Original     		PDF CGH55015F2 CGH55015P2 CGH55015F2/CGH55015P2 CGH55015F2/ CGH55015P2 CGH5501 CGH55 015F2 CGH5501 smd transistor s2p CGH55015-TB cgh55 hemt .s2p RO4350B max torque CGH55015 CGH55015F

    STR W 5456 A

    Abstract: CGH40010 Large Signal Model TDA7000 CGH40010 TDA7000 equivalent IMS2005 IMS2008 IMS2009 LMV552 TEA5768HL
    Text: TC-Sponsored Contests Message from the MTT-S Technical Coordinating Committee Chair • Richard V. Snyder T he High-Power Microwave Components Committee MTT5 has held a student-based highefficiency power amplifier (PA) design contest since 2005. This allows students


    Original     		PDF permission2009the STR W 5456 A CGH40010 Large Signal Model TDA7000 CGH40010 TDA7000 equivalent IMS2005 IMS2008 IMS2009 LMV552 TEA5768HL

    CGH40010 Large Signal Model

    Abstract: CGH40010 microwave office Cree Microwave
    Text: PIERS ONLINE, VOL. 6, NO. 2, 2010 141 Design of a Class F Power Amplifier Tian He1 and Uma Balaji2 1 California State University Chico, Chico, CA 95926, USA Farmingdale State College, Farmingdale, NY 11735, USA 2 Abstract— A Class F power amplifier PA at 2.5 GHz has been designed and fabricated. Test


    Original     		PDF

    CGH27015-TB

    Abstract: CGH27015
    Text: CGH27015 15 W, 28V, GaN HEMT for Linear Communications ranging from VHF to 3 GHz Cree’s CGH27015 is a gallium nitride GaN high electron mobility transistor designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH27015 ideal for VHF, Comms, 3G, 4G, LTE,


    Original     		PDF CGH27015 CGH27015 CGH2701 27015P CGH27015-TB

    transistor 15478

    Abstract: TRANSISTOR SMD 9014 transistor 9014 smd CGH55015F2 data sheet transistor 9014
    Text: CGH55015F2 / CGH55015P2 10 W, C-band, Unmatched, GaN HEMT Cree’s CGH55015F2/CGH55015P2 is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH55015F2/


    Original     		PDF CGH55015F2 CGH55015P2 CGH55015F2/CGH55015P2 CGH55015F2/ CGH55015P2 CGH5501 CGH55 015F2 transistor 15478 TRANSISTOR SMD 9014 transistor 9014 smd data sheet transistor 9014

    220v AC voltage stabilizer schematic diagram

    Abstract: LG color tv Circuit Diagram tda 9370 1000w inverter PURE SINE WAVE schematic diagram schematic diagram atx Power supply 500w TV SHARP IC TDA 9381 PS circuit diagram wireless spy camera 9744 mini mainboard v1.2 sony 279-87 transistor E 13005-2 superpro lx
    Text: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 AD9272 Analog Front End, iMEMS Accelerometers & Gyroscopes . . . . . . 782, 2583 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-528 Acceleration and Pressure Sensors . . . . . . . . . . . . . . . . . . . . . . . . . . Page 2585


    Original     		PDF AD9272 P462-ND LNG295LFCP2U P463-ND LNG395MFTP5U 220v AC voltage stabilizer schematic diagram LG color tv Circuit Diagram tda 9370 1000w inverter PURE SINE WAVE schematic diagram schematic diagram atx Power supply 500w TV SHARP IC TDA 9381 PS circuit diagram wireless spy camera 9744 mini mainboard v1.2 sony 279-87 transistor E 13005-2 superpro lx

    Untitled

    Abstract: No abstract text available
    Text: CGH27015 15 W, 28V, GaN HEMT for Linear Communications ranging from VHF to 3 GHz Cree’s CGH27015 is a gallium nitride GaN high electron mobility transistor designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH27015 ideal for VHF, Comms, 3G, 4G, LTE,


    Original     		PDF CGH27015 CGH27015 CGH2701 27015P

    ofdm transmitter

    Abstract: CGH40010 CGH40010 ads GaN limiter GaN PA microwave transmitter circuit diagram GaN ADS Cree Microwave digital Pre-distortion nielsen
    Text: A GaN HEMT Power Amplifier with Variable Gate Bias for Envelope and Phase Signals Ellie Cijvat1 , Kevin Tom2 , Mike Faulkner2 and Henrik Sjöland1 1 2 Dept. of Electrical and Information Technology, Lund University, Sweden P.O. Box 118, SE-221 00 Lund, Sweden


    Original     		PDF SE-221 CGH40010 com/products/pdf/CGH40010-Rev1 ofdm transmitter CGH40010 ads GaN limiter GaN PA microwave transmitter circuit diagram GaN ADS Cree Microwave digital Pre-distortion nielsen

    transistor C1096

    Abstract: transistor C2271 c2271 transistor TRANSISTOR C1555 GaN ADS Gan hemt transistor x band c1096 CGH40010F CuMoCu GaAs HEMTs X band
    Text: WMC: Challenges in Model-Based HPA Design Application of Non-Linear Models in a range of challenging GaN HEMT Power Amplifier Designs Ray Pengelly, Brad Millon, Don Farrell, Bill Pribble and Simon Wood Cree Inc., Research Triangle Park, NC 27709 Outline • Attributes of GaN HEMTs


    Original     		PDF

    TRANSISTOR SMD 9014

    Abstract: CGH40010F transistor 9014 smd 9014 transistor smd CGH55015F2 CGH5501 CGH55015 CGH55015F CGH55015P2 CGH55015-TB
    Text: CGH55015F2 / CGH55015P2 10 W, C-band, Unmatched, GaN HEMT Cree’s CGH55015F2/CGH55015P2 is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH55015F2/


    Original     		PDF CGH55015F2 CGH55015P2 CGH55015F2/CGH55015P2 CGH55015F2/ CGH55015P2 CGH5501 CGH55 015F2 TRANSISTOR SMD 9014 CGH40010F transistor 9014 smd 9014 transistor smd CGH5501 CGH55015 CGH55015F CGH55015-TB

    CGH40025P

    Abstract: CGH40010P cgh60015 GaN ADS Gan hemt transistor x band cgh40120F cgh40045f CGH60015D CGH60060D CGH60030D cgh60120D
    Text: General Purpose Wide Bandgap Transistors Gallium Nitride GaN HEMTs for Broadband Applications Broadband performance - Enables high power, multi-octave bandwidth amplifiers This “general purpose” discrete device series features Cree’s GaN HEMTs. These unmatched packaged transistors


    Original     		PDF