Untitled
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Text: ∅3.1 1.1 1.5 max ∅3.8 2.5 ? 0.5±0.5 DISCRETE LEDs - Ø 3mm White • • High Intensity • • Solid state reliability 4.4 1.0 3.5 Also available as a 5mm device Can be supplied in bulb replacement and panel mounting formats 5.4 100083 SERIES 10.4 MLQ = 50
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25ochnical
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Text: User’s Manual V850ES/KF2 32-bit Single-Chip Microcontrollers Hardware PD70F3728 μPD70F3729 Document No. U17704EJ2V0UD00 2nd edition Date Published December 2006 N CP(K) 2005 Printed in Japan [MEMO] 2 User’s Manual U17704EJ2V0UD NOTES FOR CMOS DEVICES
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PD70F3728
PD70F3729
U17704EJ2V0UD00
U17704EJ2V0UD
VIH9318
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Untitled
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Text: User’s Manual V850ES/KG2 32-bit Single-Chip Microcontrollers Hardware PD70F3731 μPD70F3732 Document No. U17703EJ2V0UD00 2nd edition Date Published October 2006 N CP(K) 2005 Printed in Japan [MEMO] 2 User’s Manual U17703EJ2V0UD NOTES FOR CMOS DEVICES
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V850ES/KG2
32-bit
PD70F3731
PD70F3732
U17703EJ2V0UD00
U17703EJ2V0UD
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Text: User’s Manual V850E/MA3 32-Bit Single-Chip Microcontrollers Hardware µPD703131A µPD703131AY µPD703132A µPD703132AY µPD703133A µPD703133AY µPD703134A µPD703134AY µPD703136A µPD703136AY µPD70F3134A µPD70F3134AY Document No. U16397EJ3V0UD00 3rd edition
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V850E/MA3
32-Bit
PD703131A
PD703131AY
PD703132A
PD703132AY
PD703133A
PD703133AY
PD703134A
PD703134AY
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Text: Preliminary User’s Manual V850ES/JF3-L 32-bit Single-Chip Microcontrollers Hardware PD70F3735 μPD70F3736 Document No. U18952EJ1V0UD00 1st edition Date Published February 2008 N 2008 Printed in Japan [MEMO] 2 Preliminary User’s Manual U18952EJ1V0UD
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V850ES/JF3-L
32-bit
PD70F3735
PD70F3736
U18952EJ1V0UD00
U18952EJ1V0UD
G0706
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Untitled
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Text: User’s Manual 78K0R/KE3 16-bit Single-Chip Microcontrollers PD78F1142 μPD78F1143 μPD78F1144 μPD78F1145 μPD78F1146 The 78K0R/KE3 has an on-chip debug function. Do not use this product for mass production because its reliability cannot be guaranteed after the on-chip debug function
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78K0R/KE3
16-bit
PD78F1142
PD78F1143
PD78F1144
PD78F1145
PD78F1146
78K0R/KE3
U17854EJ6V0UD00
U17854EJ6V0UD
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Text: Preliminary Data Sheet NX5522 Series LASER DIODE 1 550 nm FOR FTTH InGaAsP MQW-FP LASER DIODE R08DS0029EJ0100 Rev.1.00 Oct 06, 2010 DESCRIPTION The NX5522 Series is a 1 550 nm Multiple Quantum Well MQW structured Fabry-Perot (FP) laser diode with InGaAs monitor PIN-PD. These devices are
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Text: PreliminaryData Sheet PD5754T7A R09DS0012EJ0100 Rev.1.00 Dec 22, 2010 SiGe/CMOS Integrated Circuit 4 x 2 IF Switch Matrix with Gain and Tone/Voltage Controller FEATURES • 4 independent IF channels, integral switching to channel input to either channel output
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PD5754T7A
R09DS0012EJ0100
PD5739T7A
28-pin
28-pnesas
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TH05-3H103F
Abstract: No abstract text available
Text: Datasheet R2A20055NS R03DS0074EJ0100 Rev.1.00 May 7, 2013 Lithium-Ion Battery Charger IC Description The R2A20055NS is a semiconductor integrated circuit designed for Lithium-ion battery chargers at spacelimited portable applications. The R2A20055NS simply controls to charge a battery with a small number of
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100mA/500mA)
TH05-3H103F
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Text: Preliminary Data Sheet PA2811T1L R07DS0191EJ0100 Rev.1.00 Jan 11, 2011 MOS FIELD EFFECT TRANSISTOR Description The μ PA2811T1L is P-channel MOS Field Effect Transistor designed for DC/DC converter and power management applications of portable equipment.
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R07DS0191EJ0100
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PA2811T1L-E1-AY
PA2811T1L-E2-AY
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Text: Preliminary Datasheet TBB1005 R07DS0315EJ1000 Previous: REJ03G0843-0900 Rev.10.00 Mar 28, 2011 Twin Built in Biasing Circuit MOS FET IC VHF/UHF RF Amplifier Features • • • • Small SMD package CMPAK-6 built in twin BBFET; To reduce using parts cost & PC board space.
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TBB1005
R07DS0315EJ1000
REJ03G0843-0900)
PTSP0006JA-A
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Text: Preliminary Datasheet RJK0243DNS 25V, 25A, 9.6mΩmax. N Channel Power MOS FET High Speed Power Switching R07DS1074EJ0110 Rev1.10 Mar 28, 2013 Features • • • • • • • Very high speed switching Capable of 4.5 V gate drive Low drive current High density mounting
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RJK0243DNS
R07DS1074EJ0110
PWSN0008JB-A
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Text: Preliminary Data Sheet PA2561T1H R07DS0006EJ0100 Rev.1.00 Jul 08, 2010 MOS FIELD EFFECT TRANSISTOR Description The μ PA2561 is Dual N-channel MOSFETs designed for back light inverters and power management applications of portable equipments. Dual N-channel MOSFETs are assembled in one package, to contribute minimize the equipments.
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R07DS0006EJ0100
PA2561
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TO-220FL
Abstract: No abstract text available
Text: Preliminary Datasheet RJP30E3DPP-M0 Silicon N Channel IGBT High Speed Power Switching R07DS0353EJ0200 Rev.2.00 Apr 15, 2011 Features • • • • • Trench gate technology G5H series Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ High speed switching tf = 150 ns typ
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RJP30E3DPP-M0
R07DS0353EJ0200
O-220FL
PRSS0003AF-A)
O-220FL)
TO-220FL
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Text: Preliminary Datasheet RJK0348DPA 30V, 50A, 2.5m max. N Channel Power MOS FET High Speed Power Switching R07DS0912EJ0500 Rev.5.00 Mar 19, 2013 Features • High speed switching Capable of 4.5 V gate drive Low drive current High density mounting
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RJK0348DPA
R07DS0912EJ0500
PWSN0008DE-A
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Text: R32C/118 Group Datasheet Datasheet R32C/118 Group RENESAS MCU 1. R01DS0065EJ0120 Rev.1.20 Feb 6, 2013 Overview 1.1 Features The M16C Family offers a robust platform of 32-/16-bit CISC microcomputers MCUs featuring high ROM code efficiency, extensive EMI/EMS noise immunity, ultra-low power consumption, high-speed processing
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R32C/118
R01DS0065EJ0120
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R32C/100
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RJK0652DPB
Abstract: No abstract text available
Text: Preliminary Datasheet RJK0652DPB 60V, 35A, 7.0m max. Silicon N Channel Power MOS FET Power Switching R07DS0077EJ0200 Rev.2.00 Apr 09, 2013 Features • Low on-resistance RDS on = 5.5 m typ. (at VGS = 10 V) Pb-free Halogen-free
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RJK0652DPB
R07DS0077EJ0200
PTZZ0005DA-A
RJK0652DPB
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mobile phone basic block diagram
Abstract: PG2158T5K 2SC3357/NE85634 microwave Duplexer NE5510279A UPC8236 NE3517S03 UPG2156 NE662M04 SW SPDT
Text: RF AND MICROWAVE DEVICES SELECTION GUIDE − APPLICATION SYSTEM − October 2009 This document covers “Silicon Microwave Transistors”, “Silicon Microwave Monolithic ICs” and “Microwave GaAs Devices”. Caution GaAs Products This product uses gallium arsenide GaAs .
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G0706
PX10020EJ41V0PF
mobile phone basic block diagram
PG2158T5K
2SC3357/NE85634
microwave Duplexer
NE5510279A
UPC8236
NE3517S03
UPG2156
NE662M04
SW SPDT
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RJK03M2DPA
Abstract: No abstract text available
Text: Preliminary Datasheet RJK03M2DPA 30V, 45A, 2.8mΩmax. N Channel Power MOS FET High Speed Power Switching R07DS0766EJ0200 Rev.2.00 Feb 12, 2013 Features • High speed switching Capable of 4.5 V gate drive Low drive current High density mounting
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R07DS0766EJ0200
PWSN0008DE-A
RJK03M2DPA
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Text: Preliminary Datasheet RJK1055DPB 100V, 23A, 17m max. Silicon N Channel Power MOS FET Power Switching R07DS1058EJ0200 Previous: REJ03G1887-0100 Rev.2.00 Apr 11, 2013 Features • High speed switching Low drive current Low on-resistance RDS(on) = 13 m typ. (at VGS = 10 V)
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RJK1055DPB
R07DS1058EJ0200
REJ03G1887-0100)
PTZZ0005DA-A
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Text: APPLICATION NOTE R20AN0264EJ0100 Integrated Development Environment e2 studio e2 studio with Subversion and plug-in Subversive Rev.1.00 Oct 16, 2013 Summary Subversion SVN is an open-source version control system. SVN allows developers to share their projects on
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Text: TPS-1 User’s Manual: Hardware RENESAS ASSP Ethernet Controller for PROFINET IO Devices All information contained in these materials, including products and product specifications, represents information on the product at the time of publication and is subject to change by
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R19UH0081ED0102,
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Text: REV. DATE ECR NO. DESCRIPTION A 1 0 /2 9/ 02 - MODIFY DESCRIPTION B 02/25/09 100083 UPDATE DRAWING FORMAT DETAIL - A 2X SCALE o ro cO RECOMMENDED MOUNTING HOLE o1 o o o >— J •— j 00 CD o LO o m CN UNLESS OTHERWISE SPECIFIED DIMENSIONS ARE IN MILLIMETERS. DIMENSIONS IN [ ] ARE IN
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120mm
75ohm
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MP6812
Abstract: No abstract text available
Text: ANALOGIC CORP Û7 Î>ËJ'GaifciTPD 0 □ 0 211 S~1T|~~ T ' - S ' / - ^ ADDENDUM SHEET December 1976 MP6848 Multiplexer Expansion Module for Analogic Subminiature Data-Acquisition Subsystems MP6812 & MP6912 A N A L O G 1C B Please make the following changes in Bulletin No. 16-100083, REV 0:
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MP6848
MP6812
MP6912
MP6812
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