Untitled
Abstract: No abstract text available
Text: STF3NK100Z - STD3NK100Z STP3NK100Z N-channel 1000V - 5.4Ω - 2.5A - TO-220 - TO-220FP - DPAK Zener-protected SuperMESH Power MOSFET Features Type VDSS RDS on Max ID PTOT STF3NK100Z 1000V < 6Ω 2.5A 25W STP3NK100Z 1000V < 6Ω 2.5A 90W STD3NK100Z 1000V
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STF3NK100Z
STD3NK100Z
STP3NK100Z
O-220
O-220FP
STF3NK100Z
O-220
O-220FP
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D3NK100Z
Abstract: P3NK100Z D3NK JESD97 STD3NK100Z STF3NK100Z STP3NK100Z F3NK100Z
Text: STF3NK100Z - STD3NK100Z STP3NK100Z N-channel 1000V - 5.4Ω - 2.5A - TO-220 - TO-220FP - DPAK Zener-protected SuperMESH Power MOSFET Features Type VDSS RDS on Max ID PTOT STF3NK100Z 1000V < 6Ω 2.5A 25W STP3NK100Z 1000V < 6Ω 2.5A 90W STD3NK100Z 1000V
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STF3NK100Z
STD3NK100Z
STP3NK100Z
O-220
O-220FP
STF3NK100Z
O-220
O-220FP
D3NK100Z
P3NK100Z
D3NK
JESD97
STD3NK100Z
STP3NK100Z
F3NK100Z
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P3NK100Z
Abstract: F3NK100Z st 220 f1 STF3NK100Z STP3NK100Z JESD97
Text: STF3NK100Z STP3NK100Z N-channel 1000V - 5.4Ω - 2.5A - TO-220 - TO-220FP Zener-protected SuperMESH Power MOSFET Features Type VDSS RDS on ID PTOT STF3NK100Z 1000V < 6Ω 2.5A 90W STP3NK100Z 1000V < 6Ω 2.5A 25W • Extremely high dv/dt capability ■
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STF3NK100Z
STP3NK100Z
O-220
O-220FP
O-220
P3NK100Z
F3NK100Z
st 220 f1
STF3NK100Z
STP3NK100Z
JESD97
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Untitled
Abstract: No abstract text available
Text: Advance Technical Information IXFP4N100PM PolarTM HiperFETTM Power MOSFET VDSS ID25 RDS on = 1000V = 2.5A Ω ≤ 3.3Ω N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode OVERMOLDED Symbol Test Conditions VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1 MΩ
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IXFP4N100PM
4N100P
1-22-10-A
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Untitled
Abstract: No abstract text available
Text: Advance Technical Information PolarTM HiperFETTM Power MOSFET VDSS ID25 IXFP4N100PM RDS on = 1000V = 2.5A Ω ≤ 3.3Ω N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode OVERMOLDED Symbol Test Conditions VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1 MΩ
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IXFP4N100PM
4N100P
1-22-10-A
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IXTN5N250
Abstract: No abstract text available
Text: Preliminary Technical Information High Voltage Power MOSFET w/ Extended FBSOA VDSS ID25 IXTN5N250 = 2500V = 5A Ω < 8.8Ω RDS on N-Channel Enhancement Mode Avalanche Rated Guaranteed FBSOA miniBLOC E153432 S Symbol Test Conditions G Maximum Ratings VDSS TJ = 25°C to 150°C
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IXTN5N250
E153432
100ms
5N250
3-10-A
IXTN5N250
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PDF
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IXTN5N250
Abstract: 5N250 S8560 88 881 505 Vdss 2000V
Text: Preliminary Technical Information IXTN5N250 High Voltage Power MOSFET w/ Extended FBSOA VDSS ID25 = 2500V = 5A Ω < 8.8Ω RDS on N-Channel Enhancement Mode Avalanche Rated Guaranteed FBSOA miniBLOC E153432 S G Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C
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IXTN5N250
E153432
Nm/00
100ms
5N250
3-10-A
IXTN5N250
S8560
88 881 505
Vdss 2000V
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Untitled
Abstract: No abstract text available
Text: Advance Technical Information High Voltage Power MOSFET w/ Extended FBSOA VDSS ID25 IXTK5N250 IXTX5N250 = 2500V = 5A Ω < 8.8Ω RDS on N-Channel Enhancement Mode Avalanche Rated Guaranteed FBSOA TO-264 (IXTK) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C
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IXTK5N250
IXTX5N250
O-264
100ms
5N250
3-10-A
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IXTK5N250
Abstract: 5N25 IXTX5N250 Vdss 2000V PLUS247
Text: Advance Technical Information IXTK5N250 IXTX5N250 High Voltage Power MOSFET w/ Extended FBSOA VDSS ID25 = 2500V = 5A Ω < 8.8Ω RDS on N-Channel Enhancement Mode Avalanche Rated Guaranteed FBSOA TO-264 (IXTK) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C
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IXTK5N250
IXTX5N250
O-264
100ms
5N250
3-10-A
IXTK5N250
5N25
IXTX5N250
Vdss 2000V
PLUS247
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PDF
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1000V 25A Mosfet
Abstract: MTM5N100
Text: PRODUCT SPECIFICATIONS SEMICONDUCTOR TECHNOLOGY, INC. 3131 S. E. JAY STREET, STUART, FL 34997 PH: 561 283-4500 FAX: (561) 286-8914 Website: http://www.semi-tech-inc.com CASE OUTLINE: TYPE: MTM5N100 TO-204AA (TO-3) HIGH VOLTAGE POWER MOSFET N-CHANNEL ABSOLUTE MAXIMUM RATING:
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MTM5N100
O-204AA
1000V 25A Mosfet
MTM5N100
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IRFPG42
Abstract: IRFPG40
Text: IRFPG40, IRFPG42 S E M I C O N D U C T O R 4.3A and 3.9A, 1000V, 3.5 and 4.2 Ohm, N-Channel Power MOSFETs January 1998 Features Description • IRFPG40: 4.3A, 1000V, rDS ON = 3.5Ω These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power
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IRFPG40,
IRFPG42
TA09850.
IRFPG40
IRFPG42
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Untitled
Abstract: No abstract text available
Text: PD -90575 IRFAG40 1000V, N-CHANNEL REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS THRU-HOLE TO-204AA/AE Product Summary Part Number IRFAG40 BVDSS 1000V RDS(on) 3.5Ω ID 3.9Α The HEXFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors.
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IRFAG40
O-204AA/AE)
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IRFAG40
Abstract: No abstract text available
Text: PD -90575 IRFAG40 1000V, N-CHANNEL REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS THRU-HOLE TO-204AA/AE Product Summary Part Number IRFAG40 BVDSS 1000V RDS(on) 3.5Ω ID 3.9Α The HEXFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors.
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IRFAG40
O-204AA/AE)
IRFAG40
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Untitled
Abstract: No abstract text available
Text: Advance Technical Information VDSS ID25 IXFP5N100PM PolarTM HiPerFETTM Power MOSFET RDS on (Electrically Isolated Tab) N-Channel Enhancement Mode Avalanche Rated = 1000V = 2.3A Ω ≤ 2.8Ω OVERMOLDED (IXFP.M) OUTLINE Symbol Test Conditions Maximum Ratings
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IXFP5N100PM
5N100P
7-13-A
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Untitled
Abstract: No abstract text available
Text: AOK5N100 1000V,4A N-Channel MOSFET General Description Product Summary The AOK5N100 is fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications.By providing low RDS on , Ciss and Crss along
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AOK5N100
AOK5N100
AOK5N100L
O-247
Drain-Sour00
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PDF
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Untitled
Abstract: No abstract text available
Text: AOK5N100 1000V,4A N-Channel MOSFET General Description Product Summary The AOK5N100 is fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications.By providing low RDS on , Ciss and Crss along
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AOK5N100
AOK5N100
AOK5N100L
O-247
Drain-S00
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MOSFET 1000v 30a
Abstract: 10A, 100v fast recovery diode OM9027SP1 OM9028SP1 OM9029SP1 OM9030SP1 diode 1000V 10a
Text: OM9027SP1 OM9029SP1 OM9028SP1 OM9030SP1 UNCOMMITTED POWER MOSFET AND HIGH SPEED RECTIFIER IN 6-PIN PACKAGE 100V Thru 1000V, 4A To 30A Power MOSFET And High Speed Rectifier In One Package FEATURES • • • • • MOSFET And Common Cathode Rectifier In One Package
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OM9027SP1
OM9029SP1
OM9028SP1
OM9030SP1
OM9027SP1
OM90Surge
300msec,
MOSFET 1000v 30a
10A, 100v fast recovery diode
OM9029SP1
OM9030SP1
diode 1000V 10a
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Untitled
Abstract: No abstract text available
Text: AOT5N100/AOTF5N100 1000V,4A N-Channel MOSFET General Description Product Summary The AOT5N100 & AOTF5N100 are fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications.By providing low RDS on , Ciss
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AOT5N100/AOTF5N100
AOT5N100
AOTF5N100
AOT5N100L
AOTF5N100L
O-220
O-220F
AOTF5N100
Maxi00
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PDF
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Untitled
Abstract: No abstract text available
Text: AOT5N100/AOTF5N100 1000V,4A N-Channel MOSFET General Description Product Summary The AOT5N100 & AOTF5N100 are fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications.By providing low RDS on , Ciss
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AOT5N100/AOTF5N100
AOT5N100
AOTF5N100
AOT5N100L
AOTF5N100L
O-220
O-220F
AOTF5N100
Maximum00
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PDF
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Untitled
Abstract: No abstract text available
Text: PD - 91555A POWER MOSFET SURFACE MOUNT SMD-1 IRFNG40 1000V, N-CHANNEL HEXFET MOSFET TECHNOLOGY Product Summary Part Number IRFNG40 R DS(on) ID 3.5Ω 3.9A HEXFET® MOSFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The
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1555A
IRFNG40
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smd diode 39a
Abstract: mosfet 10a 800v IRFNG40 mosfet 10a 800v high power smd+diode+39a
Text: PD - 91555A POWER MOSFET SURFACE MOUNT SMD-1 IRFNG40 1000V, N-CHANNEL HEXFET MOSFET TECHNOLOGY Product Summary Part Number IRFNG40 R DS(on) ID 3.5Ω 3.9A HEXFET® MOSFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The
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1555A
IRFNG40
smd diode 39a
mosfet 10a 800v
IRFNG40
mosfet 10a 800v high power
smd+diode+39a
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Untitled
Abstract: No abstract text available
Text: IRFPG40, IRFPG42 fÇ j HARRIS S E M I C O N D U C T O R 4.3A and 3.9A, 1000V, 3.5 and 4.2 Ohm, N-Channel Power MOSFETs January 1998 Features Description • IRFPG40: 4.3A, 1000V, rDS 0 N = 3 .5 0 These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power
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OCR Scan
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IRFPG40,
IRFPG42
IRFPG40
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PDF
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Untitled
Abstract: No abstract text available
Text: OM9027SP1 OM9029SP1 OM9Q28SP1 QM9030SP1 UNCOMMITTED POWER MOSFET AND HIGH SPEED RECTIFIER IN 6-PIN PACKAGE 10 0 V T h r u 1000V. 4A To 3 0 A P o w e r M O S F E T A n d High S p e e d R ect ifi er In O n e P a c k a g e FEATURES • • • • • M OSFET And Common Cathode Rectifier In One Package
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OCR Scan
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OM9027SP1
OM9029SP1
OM9Q28SP1
QM9030SP1
OM9027
OM9028
OM9029
OM9030
300/jsec,
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PDF
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Untitled
Abstract: No abstract text available
Text: S IRFPG40, IRFPG42 S e m ico n d ucto r y 4.3A and 3.9A, 1000V, 3.5 and 4.2 Ohm, N-Channel Power MOSFETs January 1998 Description Features • IRFPG40: 4.3A, 1000V, r D S O N = These are N-Channel enhancem ent mode silicon gate power field effect transistors. They are advanced power
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OCR Scan
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IRFPG40,
IRFPG42
IRFPG40:
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PDF
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