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    1000V RELAY Search Results

    1000V RELAY Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    UHD507R/B Rochester Electronics LLC UHD507 - Quad NAND Power/Relay Driver Visit Rochester Electronics LLC Buy
    UHD432R/B Rochester Electronics LLC UHD432 - Quad 2-Input NOR Power/Relay Driver Visit Rochester Electronics LLC Buy
    UHD503R/883 Rochester Electronics LLC UHD503 - Quad OR Power/Relay Driver - Dual marked (5962-8855101CA) Visit Rochester Electronics LLC Buy
    UHD508R/883C Rochester Electronics LLC UHD508 - Quad 2-Input NAND Power/Relay Driver. Dual marked (8550001CA) Visit Rochester Electronics LLC Buy
    UHD432/883 Rochester Electronics LLC UHD432 - Quad 2-Input NOR Power/Relay Driver, CDIP14 - Dual marked (5962-8960401CA) Visit Rochester Electronics LLC Buy

    1000V RELAY Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    BVces

    Abstract: diagram induction AN7254 AN7260 G34N100E2 HGTG34N100E2
    Text: HGTG34N100E2 34A, 1000V N-Channel IGBT April 1995 Features Package • 34A, 1000V JEDEC STYLE TO-247 • Latch Free Operation • Typical Fall Time - 710ns EMITTER COLLECTOR GATE COLLECTOR BOTTOM SIDE METAL • High Input Impedance • Low Conduction Loss


    Original     		HGTG34N100E2 O-247 710ns HGTG34N100E2 150oC. BVces diagram induction AN7254 AN7260 G34N100E2 PDF

    IRFPG40

    Abstract: No abstract text available
    Text: IRFPG40 Data Sheet July 1999 4.3A, 1000V, 3.500 Ohm, N-Channel Power MOSFET • 4.3A, 1000V • rDS ON = 3.500Ω • UIS SOA Rating Curve (Single Pulse) • -55oC to 150oC Operating and Storage Temperature Symbol D G Formerly developmental type TA09850.


    Original     		IRFPG40 -55oC 150oC TA09850. O-247 IRFPG40 PDF

    TO247 CASE

    Abstract: No abstract text available
    Text: IRFPG40 Data Sheet July 1999 4.3A, 1000V, 3.500 Ohm, N-Channel Power MOSFET • 4.3A, 1000V • rDS ON = 3.500Ω • UIS SOA Rating Curve (Single Pulse) • -55oC to 150oC Operating and Storage Temperature Symbol D G Formerly developmental type TA09850.


    Original     		IRFPG40 TA09850. TO247 CASE PDF

    IRFPG40

    Abstract: No abstract text available
    Text: IRFPG40 Data Sheet January 2002 4.3A, 1000V, 3.500 Ohm, N-Channel Power MOSFET Features • 4.3A, 1000V This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of


    Original     		IRFPG40 -55oC 150oC IRFPG40 PDF

    AN7254

    Abstract: AN7260 HGTG20N100D2 G20N100D2
    Text: HGTG20N100D2 20A, 1000V N-Channel IGBT May 1995 Features Package • 34A, 1000V JEDEC STYLE TO-247 EMITTER • Latch Free Operation COLLECTOR • Typical Fall Time 520ns GATE • High Input Impedance • Low Conduction Loss COLLECTOR BOTTOM SIDE METAL Description


    Original     		HGTG20N100D2 O-247 520ns HGTG20N100D2 150oC. AN7254 AN7260 G20N100D2 PDF

    RF1S4N100SM

    Abstract: RFP4N100 TB334
    Text: RFP4N100, RF1S4N100SM Data Sheet 4.3A, 1000V, 3.500 Ohm, High Voltage, N-Channel Power MOSFETs August 1999 File Number 2457.4 Features • 4.3A, 1000V The RFP4N100 and RFP4N100SM are N-Channel enhancement mode silicon gate power field effect transistors. They are designed for use in applications such


    Original     		RFP4N100, RF1S4N100SM RFP4N100 RFP4N100SM TB334 TA09850. RF1S4N100SM TB334 PDF

    Untitled

    Abstract: No abstract text available
    Text: IRFPG40 Semiconductor D ata S h eet Ju ly 1999 4.3A, 1000V, 3.500 Ohm, N-Channel Power MOSFET F ile N u m b er 2879.2 Features • 4.3A, 1000V This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed,


    OCR Scan     		IRFPG40 PDF

    34N100E2

    Abstract: TA9895
    Text: HGTG34N100E2 34A, 1000V N-Channel IGBT April 1995 Package Features JE D EC STYLE TO -247 • 34A, 1000V EMITTER • Latch Free Operation • Typical Fall Time •710ns • High Input Impedance • Low Conduction Loss Description The HGTG34N100E2 is a MOS gated high voltage switching


    OCR Scan     		HGTG34N100E2 710ns HGTG34N100E2 34N100E2 TA9895 PDF

    G20N100D2

    Abstract: AN7254 AN7260 HGTG20N100D2
    Text: HGTG20N100D2 S E M I C O N D U C T O R 20A, 1000V N-Channel IGBT May 1995 Features Package • 34A, 1000V JEDEC STYLE TO-247 EMITTER • Latch Free Operation COLLECTOR • Typical Fall Time 520ns GATE • High Input Impedance • Low Conduction Loss COLLECTOR


    Original     		HGTG20N100D2 O-247 520ns HGTG20N100D2 150oC. G20N100D2 AN7254 AN7260 PDF

    G34N100E2

    Abstract: AN7254 AN7260 HGTG34N100E2
    Text: HGTG34N100E2 S E M I C O N D U C T O R 34A, 1000V N-Channel IGBT April 1995 Features Package • 34A, 1000V JEDEC STYLE TO-247 • Latch Free Operation • Typical Fall Time - 710ns EMITTER COLLECTOR GATE COLLECTOR BOTTOM SIDE METAL • High Input Impedance


    Original     		HGTG34N100E2 O-247 710ns HGTG34N100E2 150oC. G34N100E2 AN7254 AN7260 PDF

    Untitled

    Abstract: No abstract text available
    Text: S IRFPG40, IRFPG42 S e m ico n d ucto r y 4.3A and 3.9A, 1000V, 3.5 and 4.2 Ohm, N-Channel Power MOSFETs January 1998 Description Features • IRFPG40: 4.3A, 1000V, r D S O N = These are N-Channel enhancem ent mode silicon gate power field effect transistors. They are advanced power


    OCR Scan     		IRFPG40, IRFPG42 IRFPG40: PDF

    IRFPG42

    Abstract: IRFPG40
    Text: IRFPG40, IRFPG42 S E M I C O N D U C T O R 4.3A and 3.9A, 1000V, 3.5 and 4.2 Ohm, N-Channel Power MOSFETs January 1998 Features Description • IRFPG40: 4.3A, 1000V, rDS ON = 3.5Ω These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power


    Original     		IRFPG40, IRFPG42 TA09850. IRFPG40 IRFPG42 PDF

    IRF P CHANNEL MOSFET 200V 20A

    Abstract: P Channel Power MOSFET IRF IRF P CHANNEL MOSFET N CHANNEL MOSFET 10A 1000V IRF P-Channel FET 200v 20A IRF P CHANNEL MOSFET 10A 100V p channel mosfet 100v 70a to-252 IRF P CHANNEL MOSFET 100v IRF P-Channel FET 100v IRF P CHANNEL MOSFET TO-252
    Text: 30V 1000V 200V 100V 0.014Ω 60V RF1S9630SM Note 200V, 6.5A, 0.800Ω RF1S4N100SM 1000V, 4.3A, 3.500Ω RF1S630SM 200V, 9A, 0.400Ω 0A TO 10A S E M I C O N D U C TO R 3.500Ω 0.800Ω 0.500Ω 0.400Ω 0.18Ω 0.300Ω 0.200Ω 0.160Ω 0.080Ω 0.077Ω


    Original     		RF1S9630SM RF1S4N100SM RF1S630SM RF1S70N06SM RF1S70N03SM O-263AB) LC96586 IRF P CHANNEL MOSFET 200V 20A P Channel Power MOSFET IRF IRF P CHANNEL MOSFET N CHANNEL MOSFET 10A 1000V IRF P-Channel FET 200v 20A IRF P CHANNEL MOSFET 10A 100V p channel mosfet 100v 70a to-252 IRF P CHANNEL MOSFET 100v IRF P-Channel FET 100v IRF P CHANNEL MOSFET TO-252 PDF

    G20N100D2

    Abstract: GE 639 transistor 901 u 620 tg g20n100 443 20N TSC-1000
    Text: S m HGTG20N100D2 a r r ì 20A, 1000V N-Channel IGBT M ay 1995 Features Package • 34 A, 1000V JEDEC STYLE TO-247 EMfTTER • Latch Free Operation • Typical Fall Time 520ns • High Input Impedance • Low Conduction Loss Description The HG TG 20N 100D 2 is a MOS gated high voltage switching


    OCR Scan     		HGTG20N100D2 O-247 520ns G20N100D2 GE 639 transistor 901 u 620 tg g20n100 443 20N TSC-1000 PDF

    IRFPG

    Abstract: RFPG40
    Text: IRFPG40 IRFPG42 ¡2 HARRIS High Voltage N-Channel Enhancement Mode Power Field Effect Transistor August 1991 F e a tu re s • Package T O -2 4 7 IRFPG40: 4.3A, 1000V, r Ds 0 N = 3 .5 fi • IRFPG42: 3.9A, 1000V, r D S (O N ) TOP VIEW = 4 .2 fl • UIS SOA Rating Curve (Single Pulse)


    OCR Scan     		IRFPG40 IRFPG42 IRFPG40: IRFPG42: IRFPG42 /RFPG40, IRFPG RFPG40 PDF

    relay 1A 125VAC 1A 30VDC

    Abstract: low drop 6V 1A relay 0.5A 125VAC 1A 30VDC telecom relay 6V relay
    Text: ISSUE: 2001.12.18 Part No. Miniature SMD Relay NRP-11 Industrial & Electrical Components ● ● ● ● CONTACT DIL pitch terminal. High Sensitivity TQ2 Monostable or bistable relays Conforms to FCC part 68 1.5KV surge 1000V dielectric strength CHARACTERISTICS


    Original     		NRP-11 30VDC 1000VAC 125VAC 30VDC: 125VAC: relay 1A 125VAC 1A 30VDC low drop 6V 1A relay 0.5A 125VAC 1A 30VDC telecom relay 6V relay PDF

    ms14-1y

    Abstract: MS14 MS14-2Y
    Text: MS14 Series Military Solid State Relay With Bi-Directional Output to 240mA & 400V Product Facts • 1000V optical isolation protects control and driver circuitry from load transients. ■ Buffered/current limited input for direct drive from CMOS or TTL logic.


    Original     		240mA 240mA MIL-PRF-28750D 1000Vrms ms14-1y MS14 MS14-2Y PDF

    834-1A-B-C-12VDC

    Abstract: BC 834 834-1A-F-S
    Text: SONG CHUAN 834 Features ϭ Flat pack miniature relays. ϭ Low profile 10.8mm height. ϭ High ratings: 12A 125VAC, 10A 277VAC/30VDC, TV-5, 1/4HP 125/250VAC. ϭ High dielectric strength 2500V between coil and contact and 1000V between contacts. ϭ UL, CSA, TUV approved.


    Original     		125VAC, 277VAC/30VDC, 125/250VAC. 2002/95/EC. 34-1A-C 34-1A-F-C 34-1A-V 34-1A-F-V 34-1A-S 34-1A-F-S 834-1A-B-C-12VDC BC 834 834-1A-F-S PDF

    R9552452

    Abstract: ms c class pipes E88991 125VAC 12A 125VAC 277VAC 10A
    Text: SONG CHUAN 834 Features ϭ Flat pack miniature relays. ϭ Low profile 10.8mm height. ϭ High ratings: 12A 125VAC, 10A 277VAC/30VDC, TV-5, 1/4HP 125/250VAC. ϭ High dielectric strength 2500V between coil and contact and 1000V between contacts. ϭ UL, CSA, TUV approved.


    Original     		125VAC, 277VAC/30VDC, 125/250VAC. 2002/95/EC. 34-1A-C 34-1A-V 34-1A-S 34-1A-F-C 34-1A-F-V 34-1A-F-S R9552452 ms c class pipes E88991 125VAC 12A 125VAC 277VAC 10A PDF

    ISOPLUS-264

    Abstract: CPC1786J CPC1976Y ISOPLUS264 CPC1708J cpc1909 CPC1906Y CPC1709J CPC1978J CPC1916Y
    Text: Power Solid State Relays i4-PAC , ISOPLUS264, and the Power SIP Relays Features • Solid State Reliability • Handle loads up to 15Arms • Voltage ratings from 60V - 1000V • Low On Resistance • Compact i4-PAC™ Package with low thermal resistance and heat sink


    Original     		ISOPLUS264, 15Arms optically-coup264 Q1-05 ISOPLUS264 ISOPLUS-264 CPC1786J CPC1976Y ISOPLUS264 CPC1708J cpc1909 CPC1906Y CPC1709J CPC1978J CPC1916Y PDF

    GRM42 monolithic ceramic capacitor

    Abstract: MURATA GRM44-1 COG grm x7r 36 100 k grm42 2220 X7R 500 murata CAPACITORS GRM
    Text: MONOLITHIC CERAMIC CAPACITORS CERAMIC CHIP CAPACITORS 500 & 1000V RATED COG & X7R TYPE GRM Series These new surface mount components are designed to meet the growing demand for miniature, reliable chip capacitors, especially where high volume automation is


    Original     		GRM43-2 GRM44-1 GRM42-6 GRM42-2 GRM42-6 GRM42-2 /178mm GRM43-2 GRM44-1 GRM42 monolithic ceramic capacitor MURATA GRM44-1 COG grm x7r 36 100 k grm42 2220 X7R 500 murata CAPACITORS GRM PDF

    JRC-23FHS

    Abstract: JRC-23F E158859 IEC255 relay 24VDC JRC 7200 IEC255-5 IEC255-7 relay 24VDC, IEC255 JRC23FHS IEC255-19-1
    Text: JRC-23F JRC-23F Operation condition Insulation Resistance Dielectric Strength Between contacts Between contact and coil 1000M 50Hz 400V 50Hz 1000V Item 6 of IEC255-5 Item 6 of IEC255-5 Shock resistance Vibration resistance Terminals strength Solderability


    Original     		JRC-23F 1000M IEC255-5 100m/s2 IEC68-2-27 IEC68-2-6 IEC68-2-21 IEC68-2-20 JRC-23FHS JRC-23F E158859 IEC255 relay 24VDC JRC 7200 IEC255-5 IEC255-7 relay 24VDC, IEC255 JRC23FHS IEC255-19-1 PDF

    photovoltaic diode

    Abstract: No abstract text available
    Text: POWER MOSFET SOLID STATE AC/DC RELAY SPST/NO DIH-121 DIH-122* Features • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ Low level logic compatibility Optical Isolation, to 1000V DC Low on resistance Low off-set voltage Low off-state leakage current High speed switching response


    OCR Scan     		DIH-121 Mil-R-28750 DIH-122* DIH-121 DIH-122 photovoltaic diode PDF

    ATA6870

    Abstract: ata6871 advantages of microcontroller based relay one cell battery protection ic diagram simple powerful charge controller block diagram advantages of microcontroller -based relay used f advantages of microcontroller -based over current relay lithium ion battery for electric cars hybrid lithium ion battery relay fuel level controller circuit diagram
    Text: Atmel Automotive Compilation, Vol. 6 Standard Products New Li-Ion Battery Management Chipset ATA6870, ATA6871 for Electrical and Hybrid Vehicles Claus Mochel Electric or hybrid vehicles offer teries. These Li-Ion batteries offer and 500V, and even up to 1000V or


    Original     		ATA6870, ATA6871 10ents ATA6870s ATA6871s ATA6870 ATA6870 ata6871 advantages of microcontroller based relay one cell battery protection ic diagram simple powerful charge controller block diagram advantages of microcontroller -based relay used f advantages of microcontroller -based over current relay lithium ion battery for electric cars hybrid lithium ion battery relay fuel level controller circuit diagram PDF