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    HGTG20N100D2 Search Results

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    HGTG20N100D2 Price and Stock

    Rochester Electronics LLC HGTG20N100D2

    34A, 1200V, N-CHANNEL IGBT
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey HGTG20N100D2 Bulk 33
    • 1 -
    • 10 -
    • 100 $9.28
    • 1000 $9.28
    • 10000 $9.28
    		Buy Now

    Harris Semiconductor HGTG20N100D2

    34A, 1200V, UFS SERIES N-Channel IGBT WITH ANTI-PARALLEL HYPERFAST DIODE '
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Rochester Electronics HGTG20N100D2 539 1
    • 1 $8.92
    • 10 $8.92
    • 100 $8.38
    • 1000 $7.58
    • 10000 $7.58
    		Buy Now

    HGTG20N100D2 Datasheets (3)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    HGTG20N100D2 Harris Semiconductor 20A, 1000V N-Channel IGBT Original PDF
    HGTG20N100D2 Intersil 20A, 1000V N-Channel IGBT Original PDF
    HGTG20N100D2 Intersil Obsolete Product Datasheet Scan PDF

    HGTG20N100D2 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    G20N100D2

    Abstract: AN7254 AN7260 HGTG20N100D2
    Text: HGTG20N100D2 S E M I C O N D U C T O R 20A, 1000V N-Channel IGBT May 1995 Features Package • 34A, 1000V JEDEC STYLE TO-247 EMITTER • Latch Free Operation COLLECTOR • Typical Fall Time 520ns GATE • High Input Impedance • Low Conduction Loss COLLECTOR


    Original     		PDF HGTG20N100D2 O-247 520ns HGTG20N100D2 150oC. G20N100D2 AN7254 AN7260

    Untitled

    Abstract: No abstract text available
    Text: HGTG20N100D2 Transistors N-Channel IGBT V BR CES (V)1k V(BR)GES (V)20 I(C) Max. (A)34 Absolute Max. Power Diss. (W)150 Minimum Operating Temp (øC) Maximum Operating Temp (øC)150õ Thermal Resistance Junc-Case0.83 Thermal Resistance Junc-Amb. g(fe) Min. (S) Trans. admitt.


    Original     		PDF HGTG20N100D2 delay100nà time150nà time650n

    AN7254

    Abstract: AN7260 HGTG20N100D2 G20N100D2
    Text: HGTG20N100D2 20A, 1000V N-Channel IGBT May 1995 Features Package • 34A, 1000V JEDEC STYLE TO-247 EMITTER • Latch Free Operation COLLECTOR • Typical Fall Time 520ns GATE • High Input Impedance • Low Conduction Loss COLLECTOR BOTTOM SIDE METAL Description


    Original     		PDF HGTG20N100D2 O-247 520ns HGTG20N100D2 150oC. AN7254 AN7260 G20N100D2

    HGTG30N120D2

    Abstract: AN7254 AN7260 HGTG20N100D2 717 MOSFET
    Text: HGTG30N120D2 S E M I C O N D U C T O R 30A, 1200V N-Channel IGBT April 1995 Features Package • 30A, 1200V JEDEC STYLE TO-247 • Latch Free Operation EMITTER COLLECTOR • Typical Fall Time - 580ns GATE • High Input Impedance COLLECTOR BOTTOM SIDE METAL


    Original     		PDF HGTG30N120D2 O-247 580ns HGTG30N120D2 150oC. AN7254 AN7260 HGTG20N100D2 717 MOSFET

    HGTG30N120D2

    Abstract: AN7254 AN7260 HGTG20N100D2 G30N120D2
    Text: HGTG30N120D2 30A, 1200V N-Channel IGBT April 1995 Features Package • 30A, 1200V JEDEC STYLE TO-247 • Latch Free Operation EMITTER COLLECTOR • Typical Fall Time - 580ns GATE • High Input Impedance COLLECTOR BOTTOM SIDE METAL • Low Conduction Loss


    Original     		PDF HGTG30N120D2 O-247 580ns HGTG30N120D2 150oC. AN7254 AN7260 HGTG20N100D2 G30N120D2

    Untitled

    Abstract: No abstract text available
    Text: m H A R R IS S E M I C O N D U C T O R HGTG20N100D2 20A, 1000V N-Channel IGBT December 1993 Package Features JEDEC STYLE TO-247 TOP VIEW • 34 Am p, 1000 Volt • Latch Free Operation • Typical Fall Tim e 520ns • High Input Im pedance • Low C onduction Loss


    OCR Scan     		PDF HGTG20N100D2 O-247 520ns HGTG20N100D2

    wf vqe 24 d

    Abstract: AN7254 AN7260 HGTG20N100D2 transistor c90 wx2 transistor
    Text: HARRIS SEIUCOND SECTOR bflE D 33 HARRIS HGTG20N100D2 S E M I C O N D U C T O R 4302271 Ü0SD21D bOT HAS 20A, 1000V N-Channel IGBT December 1993 Package Features JEDEC STYLE TO-247 TOP VIEW • 34 Amp, 1000 Volt • Latch Free Operation ^EMITTER • Typical Fall Time 520ns


    OCR Scan     		PDF 0SD21D TG20N10OD2 520ns HGTG20N100D2 wf vqe 24 d AN7254 AN7260 transistor c90 wx2 transistor

    G20N100D2

    Abstract: GE 639 transistor 901 u 620 tg g20n100 443 20N TSC-1000
    Text: S m HGTG20N100D2 a r r ì 20A, 1000V N-Channel IGBT M ay 1995 Features Package • 34 A, 1000V JEDEC STYLE TO-247 EMfTTER • Latch Free Operation • Typical Fall Time 520ns • High Input Impedance • Low Conduction Loss Description The HG TG 20N 100D 2 is a MOS gated high voltage switching


    OCR Scan     		PDF HGTG20N100D2 O-247 520ns G20N100D2 GE 639 transistor 901 u 620 tg g20n100 443 20N TSC-1000

    igbt 400V 20A

    Abstract: igbt 500V 15A diode 500v 10A diode 10a 400v 20A 500v igbt igbt 1000v 10A igbt 1200V 20A DIODE 20A igbt 400V 5A current sensing 400V
    Text: I- MCT/IGBT/DIODES 3 INSULATED GATE BIPOLAR TRANSISTORS IGBTs PAGE SELECTION G U ID E .


    OCR Scan     		PDF HGTD6N40E1, HGTD6N50E1, HGTD10N40F1, HGTD10N50F1, HGTH12N40C1, HGTM12N40C1, HGTP10N40C1, HGTM12N60D1 HGTP12N60D1 HGTH20N40C1, igbt 400V 20A igbt 500V 15A diode 500v 10A diode 10a 400v 20A 500v igbt igbt 1000v 10A igbt 1200V 20A DIODE 20A igbt 400V 5A current sensing 400V

    TRANSISTOR BIPOLAR 400V 20A

    Abstract: igbt 1000v 10A P-Channel IGBT igbt 500V 15A igbt 40A 600V P-CHANNEL 400V 15A N channel 600v 20a IGBT igbt 400V 40A igbt 400V 20A 400V P-Channel IGBT
    Text: — MCT/IGBT/DIODES 3 INSULATED GATE BIPOLAR TRANSISTORS PAGE SELECTION G U ID E .


    OCR Scan     		PDF HGTD6N40E1, HGTD6N40E1S, HGTD6N50E1, HGTD6N50E1S HGTP6N40E1D, HGTP6N50E1D HGTP10N40C1, HGTH12N40C1, HGTP10N40C1D, HGTP10N40E1D, TRANSISTOR BIPOLAR 400V 20A igbt 1000v 10A P-Channel IGBT igbt 500V 15A igbt 40A 600V P-CHANNEL 400V 15A N channel 600v 20a IGBT igbt 400V 40A igbt 400V 20A 400V P-Channel IGBT

    Untitled

    Abstract: No abstract text available
    Text: HA RR IS SEÎ1IC0N» S E C T O R bflE D • M30 E 27 1 DQSOEEfi Ô4T ■ ¡ H A S HGTG30N120D2 30A, 1200V N-Channel IGBT D ecember 1993 Features Package JEDEC STYLE TO-247 TOP VIE!N • 30 A m p 1200 V olt • L a tch Free O p e ra tio n _ EMITTER • T y p ic a l Fall T im e - 580ns


    OCR Scan     		PDF HGTG30N120D2 O-247 580ns 30N120D2*

    30N120D2

    Abstract: HGTG30N120D2 U 665
    Text: HGTG30N120D2 30A, 1200V N-Channel IGBT December 1993 Package Features JEDEC STYLE TO-247 TOP VIEW • 30 Am p 1200 Volt • Latch Free Operation ^FMITTFH • Typical Fall T im e - 580ns COLLECTOR BOTTOM SIDE METAL I • High Input Im pedance • Low C onduction Loss


    OCR Scan     		PDF HGTG30N120D2 O-247 580ns 120D2* 30N120D2 HGTG30N120D2 U 665

    equivalent data book of 10N60 mosfet

    Abstract: MC14016CP GD4511 an-6466 CX 2859 SMD 74AC14 spice 6120* harris HCF4018be 7028 SMD Transistor spice irfbc40
    Text: $5.00 S E M I C O N D U C T O R TECHNICAL ASSISTANCE Harris Marketing Support Services HMSS , 1-800-4HARRIS HMSS provides world-class service to customers requiring information on all products offered by Harris Semiconductor. Ask Harris Marketing Support Services for answers concerning:


    OCR Scan     		PDF 1-800-4HARRIS equivalent data book of 10N60 mosfet MC14016CP GD4511 an-6466 CX 2859 SMD 74AC14 spice 6120* harris HCF4018be 7028 SMD Transistor spice irfbc40