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    1005 TRANSISTOR Search Results

    1005 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    1005 TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: Thin-Film Cascadable Amplifier 5 to 1000 MHz Technical Data UTO/UTC 1005 Series Features Description Pin Configuration • Frequency Range: 5 to 1000 MHz The 1005 Series is a medium-gain, thinfilm bipolar RF amplifier using resistive feedback and active bias


    Original     		PDF PP-38

    tc1a

    Abstract: GP 039 SMA
    Text: Thin-Film Cascadable Amplifier 5 to 1000 MHz Technical Data UTO/UTC 1005 Series Features Description Pin Configuration • Frequency Range: 5 to 1000 MHz The 1005 Series is a medium-gain, thinfilm bipolar RF amplifier using resistive feedback and active bias


    Original     		PDF PP-38 tc1a GP 039 SMA

    Agilent 9981

    Abstract: transistor n a683
    Text: H Avantek Products Thin-Film Cascadable Amplifier 5 to 1000 MHz Technical Data UTO/UTC/PPA 1005 Series Features Description Pin Configuration • Frequency Range: 5 to 1000␣MHz The 1005 Series is a medium-gain, thinfilm bipolar RF amplifier using resistive feedback and active bias


    Original     		PDF 1000MHz PP-38 5963-3232E. 5963-2456E Agilent 9981 transistor n a683

    power switching with IRFP450 schematic

    Abstract: POWER MOSFET CIRCUIT BJT, General electric Linear Application Note FET IRFP450 Avalanche
    Text: VISHAY SILICONIX www.vishay.com Power MOSFETs Application Note AN-1005 Power MOSFET Avalanche Design Guidelines TABLE OF CONTENTS Page Table of Figures. 2


    Original     		PDF AN-1005 06-Dec-11 power switching with IRFP450 schematic POWER MOSFET CIRCUIT BJT, General electric Linear Application Note FET IRFP450 Avalanche

    POWER MOSFET CIRCUIT

    Abstract: fuel injector mosfet automotive injector fuel injector test fuel injector driver FET injector MOSFET driver irfp*32n50k FET IRFP450 AN-1005 IRF7484
    Text: Application Note AN-1005 Power MOSFET Avalanche Design Guidelines By Tim McDonald, Marco Soldano, Anthony Murray, Teodor Avram Table of Contents Page Table of Figures .3 Introduction .4


    Original     		PDF AN-1005 POWER MOSFET CIRCUIT fuel injector mosfet automotive injector fuel injector test fuel injector driver FET injector MOSFET driver irfp*32n50k FET IRFP450 AN-1005 IRF7484

    2SC5601

    Abstract: No abstract text available
    Text: DATA SHEET NPN SILICON RF TRANSISTOR 2SC5601 NPN SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW NOISE AMPLIFIER 3-PIN LEAD-LESS MINIMOLD FEATURES • Low voltage operation, low phase distortion • Ideal for OSC applications • 3-pin lead-less minimold package 1005 PKG


    Original     		PDF 2SC5601 2SC5601-T3 2SC5601

    09 06 248 6834

    Abstract: 2SC5616-T3 2SC5616
    Text: DATA SHEET NPN SILICON RF TRANSISTOR 2SC5616 NPN SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW NOISE AMPLIFIER 3-PIN LEAD-LESS MINIMOLD FEATURES • Low voltage operation, low phase distortion • Ideal for OSC applications • 3-pin lead-less minimold package 1005 PKG


    Original     		PDF 2SC5616 2SC5616-T3 09 06 248 6834 2SC5616-T3 2SC5616

    107D

    Abstract: No abstract text available
    Text: CHIP LED LAMPS GENERAL INFORMATION QUALITY CONTROL AND ASSURANCE Classification Endurance Test Environmental Test Test Item Reference Standard Test Conditions Operation Life MIL-STD-750 : 1026 MIL-STD-883 : 1005 JIS C 7021 : B-1 High Temperature High Humidity


    Original     		PDF MIL-STD-202 MIL-STD-883 JIS-C-7021 MIL-STD-750 107D

    fuel injector mosfet

    Abstract: automotive injector fuel injector driver FET switching with IRFP450 schematic injector MOSFET driver INJECTOR POWER MOSFET CIRCUIT AN-1005 fuel injector test solenoid injector
    Text: AN-1005 Rev. 1.0 POWER MOSFET AVALANCHE DESIGN GUIDELINES Application Note Tim McDonald Marco Soldano Anthony Murray Teodor Avram Page 1 of 17 TABLE OF CONTENTS Table of Figures Introduction Overview Avalanche Mode Defined Avalanche Occurrences In Industry Applications


    Original     		PDF AN-1005 fuel injector mosfet automotive injector fuel injector driver FET switching with IRFP450 schematic injector MOSFET driver INJECTOR POWER MOSFET CIRCUIT AN-1005 fuel injector test solenoid injector

    5252 F 0911

    Abstract: 5252 F 1108 2SC5615-T3 2SC5615 5252 F 0906
    Text: DATA SHEET NPN SILICON RF TRANSISTOR 2SC5615 NPN SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW NOISE 3-PIN LEAD-LESS MINIMOLD FEATURES • 1005 package employed 1.0 x 0.5 × 0.5 mm • NF = 1.4 dB TYP., S21e2 = 12.0 dB TYP. @ VCE = 3 V, IC = 7 mA, f = 1 GHz


    Original     		PDF 2SC5615 S21e2 2SC5615-T3 5252 F 0911 5252 F 1108 2SC5615-T3 2SC5615 5252 F 0906

    5252 F 1108

    Abstract: 5252 F 1104 5252 F 1120 5252 F 1103 5252 F 1114 2SC5615 5252 F 1105 5252 F 0911 5252 1101 5252 F 1105 transistor
    Text: DATA SHEET NPN SILICON RF TRANSISTOR 2SC5615 NPN SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW NOISE 3-PIN LEAD-LESS MINIMOLD FEATURES • 1005 package employed 1.0 x 0.5 × 0.5 mm • NF = 1.4 dB TYP., S21e2 = 12.0 dB TYP. @ VCE = 3 V, IC = 7 mA, f = 1 GHz


    Original     		PDF 2SC5615 S21e2 2SC5615-T3 5252 F 1108 5252 F 1104 5252 F 1120 5252 F 1103 5252 F 1114 2SC5615 5252 F 1105 5252 F 0911 5252 1101 5252 F 1105 transistor

    724G

    Abstract: No abstract text available
    Text: MLN1005-28S NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI MLN 1005-28S is a Common Emitter Device Designed for General Purpose Class A and AB Amplifier Applcations up to 1200 MHz. PACKAGE STYLE .280" 4L STUD A 45° C E B FEATURES INCLUDE: E B • Gold Metalization


    Original     		PDF MLN1005-28S 1005-28S 724G

    ASI1005

    Abstract: ASI10524
    Text: ASI1005 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE .250 2L FLG The ASI 1005 is Designed for General Purpose Class C Power Amplifier Applications up to 1500 MHz. A ØD B .060 x 45° CHAMFER C E FEATURES: G • PG = 12 dB min at 5 W/ 1,000 MHz


    Original     		PDF ASI1005 ASI1005 ASI10524

    5252 F 1108

    Abstract: 5252 F 1008 5252 F 1004
    Text: DATA SHEET NPN SILICON RF TRANSISTOR 2SC5615 NPN SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW NOISE 3-PIN LEAD-LESS MINIMOLD FEATURES • 1005 package employed 1.0 x 0.5 × 0.5 mm • NF = 1.4 dB TYP., S21e2 = 12.0 dB TYP. @ VCE = 3 V, IC = 7 mA, f = 1 GHz


    Original     		PDF 2SC5615 S21e2 2SC5615 2SC5615-T3 5252 F 1108 5252 F 1008 5252 F 1004

    5091-9704E

    Abstract: 9704e
    Text: Operational Considerations for LED Lamps and Display Devices Application Note 1005 Introduction In the design of a drive circuit for an LED lamp, an LED light bar, or an LED 7-segment display, the objective is to achieve optimum light output, power dissipation,


    Original     		PDF 5091-9704E 9704e

    ZLP32300

    Abstract: PRS000303-1005 Z86D73
    Text: ZLP32300 Low-Voltage Infrared OTP Programming Specification PRS000303-1005 ZiLOG Worldwide Headquarters • 532 Race Street • San Jose, CA 95126-3432 Telephone: 408.558.8500 • Fax: 408.558.8300 • www.ZiLOG.com This publication is subject to replacement by a later edition. To determine whether


    Original     		PDF ZLP32300 PRS000303-1005 ZLP32300P4016 40-pin ZLP32300P4004 ZLP32300H2816 28-pin ZLP32300H2804 ZLP32300 PRS000303-1005 Z86D73

    107D

    Abstract: HX2040
    Text: CHIP LED LAMPS GENERAL INFORMATION QUALITY CONTROL AND ASSURANCE Classification Endurance Test Environmental Test Test Item Reference Standard Test Conditions Result Operation Life MIL-STD-750 : 1026 MIL-STD-883 : 1005 JIS C 7021 : B-1 Connect with a power If = 20mA


    Original     		PDF MIL-STD-202 240hrs MIL-STD-883 000hrs JIS-C-7021 MIL-STD-750 60min 107D HX2040

    NTC thermistor 100k ohm b 3950

    Abstract: NCP15XH103F04RC 70303 NTC thermistor 100K 3950 74283 IC NCP15XM472p03RC thermistor 10k 3380 0603 Termistor NTC 120
    Text: R44E4.pdf 01.5.29 This is the PDF file of catalog No.R44E-4 NTC Thermistors for Temperature Compensation 0402 1005 Size 0.5±0.05 0201/0402/0603/0805 sized Chip NTC Thermistor have Ni barrier termination and provide excellent solderability and offer high stability in environment


    Original     		PDF R44E-4 R44E4 300mm/min. NTC thermistor 100k ohm b 3950 NCP15XH103F04RC 70303 NTC thermistor 100K 3950 74283 IC NCP15XM472p03RC thermistor 10k 3380 0603 Termistor NTC 120

    Untitled

    Abstract: No abstract text available
    Text: 1713-1005 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)100ö V(BR)CBO (V)110 I(C) Max. (A)5.0 Absolute Max. Power Diss. (W)115 Maximum Operating Temp (øC)175õ I(CBO) Max. (A)4.0m÷ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)


    Original     		PDF Freq40M

    sd1005

    Abstract: No abstract text available
    Text: SILICON TRANSISTOR 2SD 1005 NPN SILICON EPITAXIAL TRANSISTOR POWER M IN I MOLD DESCRIPTION The 2S D 1005 is designed fo r audio frequency pow er a m p lifie r app lica tion, especially in H y b rid Integrated Circuits. FEATURES PACKAGE DIMENSIONS • W orld Standard M inia tu re Package


    OCR Scan     		PDF 2SD1005 2SB804 sd1005

    U/25/20/TN26/15/850/HC 148 TRANSISTOR

    Abstract: No abstract text available
    Text: W BI HEWLETT m itia P A C K A R D Avantek Products Thin-Film Cascadable Amplifier 5 to 1000 MHz Technical Data UTO/UTC/PPA 1005 Series Features Description • Frequency Range: 5 to 1000 MHz The 1005 Series is a medium-gain, thinfilm bipolar RF amplifier using


    OCR Scan     		PDF PP-38 U/25/20/TN26/15/850/HC 148 TRANSISTOR

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET NEC / SILICON TRANSISTOR / 2SD1005 NPN SILICON EPITAXIAL TRANSISTOR POWER M IN I MOLD DESCRIPTION The 2S D 1005 is designed fo r audio frequency pow er am p lifie r app lication, especially in H y b rid Integrated Circuits. FEATURES PACKAGE DIMENSIONS


    OCR Scan     		PDF 2SD1005 2SD1005 2SB804

    2SD1005

    Abstract: EL1202 2SB804 IEI-1213 DF RV transistor marking lp nec
    Text: DATA SHEET SILICON TRANSISTOR 2SD 1005 NPN SILICON EPITAXIAL TRANSISTOR POWER M IN I MOLD DESCRIPTION The 2S D 10 05 is designed for audio frequency power am plifier application, especially in Hybrid Integrated Circuits. FEATURES PACKAGE DIMENSIONS • World Standard M iniature Package


    OCR Scan     		PDF 2SD1005 2SB804 2SD1005 EL1202 2SB804 IEI-1213 DF RV transistor marking lp nec

    9033 transistor

    Abstract: PT8828 2N4932 PT8740 BLW27 BLX66 sd1315 BLY94 MM1669 PT8811
    Text: 0.75. 4.2 GHz microwave transistors for class C operation O transistors hyperfréquences, classe C TYPE TH 1002 TH 1005 TH 1010 TH 2001 TH 2003 TH 2005 TH 2302 TH 2304 TH 2307 TH 3000 TH 3001 TH 3003 TH 3005 TH 4200 TH 4201 2 IM 4428 2N 4429 2N 4430 2N 4431


    OCR Scan     		PDF 302N6082 BM80-12 SD1416 MM1601 MRF631 SD1144 PT8549 SD1214 N5054 2N3553 9033 transistor PT8828 2N4932 PT8740 BLW27 BLX66 sd1315 BLY94 MM1669 PT8811