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    100A 1000V MOSFET Search Results

    100A 1000V MOSFET Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation

    100A 1000V MOSFET Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    100A 1000V mosfet

    Abstract: No abstract text available
    Text: APTMC170AM30CT1AG VDSS = 1700V RDSon = 30mΩ max @ Tj = 25°C ID = 106A @ Tc = 25°C Phase leg SiC MOSFET Power Module Application • Welding converters • Switched Mode Power Supplies • Uninterruptible Power Supplies • Motor control Features • SiC Power MOSFET


    Original     		PDF APTMC170AM30CT1AG 100A 1000V mosfet

    Untitled

    Abstract: No abstract text available
    Text: APTM100U13S Single switch Series & parallel diodes MOSFET Power Module VDSS = 1000V RDSon = 130m max @ Tj = 25°C ID = 65A @ Tc = 25°C Application • • • Motor control Switched Mode Power Supplies Uninterruptible Power Supplies Features • • • Power MOS V MOSFETs


    Original     		PDF APTM100U13S

    Untitled

    Abstract: No abstract text available
    Text: APT10030L2VFR 1000V 33A 0.300Ω POWER MOS V FREDFET TO-264 Max Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®


    Original     		PDF APT10030L2VFR O-264 O-264

    APT10030L2VFR

    Abstract: DSA003668
    Text: APT10030L2VFR 1000V 33A 0.300Ω POWER MOS V FREDFET TO-264 Max Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®


    Original     		PDF APT10030L2VFR O-264 O-264 APT10030L2VFR DSA003668

    Untitled

    Abstract: No abstract text available
    Text: APT10030L2VFR 1000V 0.300Ω 33A POWER MOS V FREDFET TO-264 Max Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®


    Original     		PDF APT10030L2VFR O-264 O-264

    RHRG50100

    Abstract: RHRG5070 RHRG5080 RHRG5090
    Text: RHRG5070, RHRG5080, RHRG5090, RHRG50100 S E M I C O N D U C T O R 50A, 700V - 1000V Hyperfast Diodes April 1995 Features Package • Hyperfast with Soft Recovery . . . . . . . . . . . . . . . . <75ns JEDEC STYLE TO-247 o ANODE • Operating Temperature . . . . . . . . . . . . . . . . . . . . +175 C


    Original     		PDF RHRG5070, RHRG5080, RHRG5090, RHRG50100 O-247 RHRG5090 TA49066) RHRG50100 RHRG5070 RHRG5080

    APTM100U13S

    Abstract: No abstract text available
    Text: APTM100U13S Single switch Series & parallel diodes MOSFET Power Module SK VDSS = 1000V RDSon = 130mΩ typ @ Tj = 25°C ID = 65A @ Tc = 25°C Application CR1 D S • • • Motor control Switched Mode Power Supplies Uninterruptible Power Supplies Features


    Original     		PDF APTM100U13S APTM100U13S

    Untitled

    Abstract: No abstract text available
    Text: APT1001RBVFR APT1001RSVFR 1000V POWER MOS V FREDFET 11A 1.00Ω BVFR D3PAK TO-247 Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®


    Original     		PDF APT1001RBVFR APT1001RSVFR O-247 O-247 APT1001RBVFR

    100A 1000V mosfet

    Abstract: mosfet vgs 5v mosfet 10a 800v N CHANNEL MOSFET 10A 1000V MOSFET 800V 10A POWER MOSFET Rise Time 1000V NS MOSFET 20V 100A 100A 1000V power mosfet 100A Mosfet MOSFET IGSS 100A
    Text: MOSFET MODULE SF100CB100 UL;E76102 M SF100CB100 is a isolated power MOSFET module designed for fast swiching applications of high voltage and current. The mounting base of the module is electrically isolated from semiconductor elements for simple heatsink construction.


    Original     		PDF SF100CB100 E76102 SF100CB100 300ns 100A 1000V mosfet mosfet vgs 5v mosfet 10a 800v N CHANNEL MOSFET 10A 1000V MOSFET 800V 10A POWER MOSFET Rise Time 1000V NS MOSFET 20V 100A 100A 1000V power mosfet 100A Mosfet MOSFET IGSS 100A

    Untitled

    Abstract: No abstract text available
    Text: APT1001RBVFR APT1001RSVFR 1000V 1.00Ω 11A BVFR POWER MOS V FREDFET D3PAK TO-247 Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®


    Original     		PDF APT1001RBVFR APT1001RSVFR O-247 O-247 APT1001RBVFR

    APT1001RBVFR

    Abstract: APT1001RSVFR
    Text: APT1001RBVFR APT1001RSVFR 1000V POWER MOS V FREDFET 11A 1.00Ω BVFR D3PAK TO-247 Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®


    Original     		PDF APT1001RBVFR APT1001RSVFR O-247 O-247 APT1001RBVFR APT1001RSVFR

    Untitled

    Abstract: No abstract text available
    Text: APTM100DAM90G Boost chopper MOSFET Power Module VBUS VDSS = 1000V RDSon = 90mΩ typ @ Tj = 25°C ID = 78A @ Tc = 25°C Application • AC and DC motor control • Switched Mode Power Supplies • Power Factor Correction CR1 OUT Features • Power MOS 7 MOSFETs


    Original     		PDF APTM100DAM90G APTM100DAM90Gâ

    Untitled

    Abstract: No abstract text available
    Text: APTM100SKM90G Buck chopper MOSFET Power Module Application • AC and DC motor control • Switched Mode Power Supplies VBUS Q1 G1 Features • Power MOS 7 MOSFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Avalanche energy rated


    Original     		PDF APTM100SKM90G APTM100SKM90Gâ

    APT0502

    Abstract: APT0601 APTM100DAM90G
    Text: APTM100DAM90G Boost chopper MOSFET Power Module Application • AC and DC motor control • Switched Mode Power Supplies • Power Factor Correction VBUS CR1 OUT Features • Power MOS 7 MOSFETs - Low RDSon - Low input and Miller capacitance - Low gate charge


    Original     		PDF APTM100DAM90G APTM100DAM90G­ APT0502 APT0601 APTM100DAM90G

    IRFAG40

    Abstract: No abstract text available
    Text: PD -90575 IRFAG40 1000V, N-CHANNEL REPETITIVE AVALANCHE AND dv/dt RATED  HEXFET TRANSISTORS THRU-HOLE TO-204AA/AE Product Summary Part Number IRFAG40 BVDSS 1000V RDS(on) 3.5Ω ID 3.9Α  The HEXFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors.


    Original     		PDF IRFAG40 O-204AA/AE) IRFAG40

    Untitled

    Abstract: No abstract text available
    Text: PD -90575 IRFAG40 1000V, N-CHANNEL REPETITIVE AVALANCHE AND dv/dt RATED  HEXFET TRANSISTORS THRU-HOLE TO-204AA/AE Product Summary Part Number IRFAG40 BVDSS 1000V RDS(on) 3.5Ω ID 3.9Α  The HEXFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors.


    Original     		PDF IRFAG40 O-204AA/AE)

    APT10030L2VR

    Abstract: DSA003669
    Text: APT10030L2VR 1000V 33A 0.300Ω POWER MOS V MOSFET TO-264 Max Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®


    Original     		PDF APT10030L2VR O-264 O-264 APT10030L2VR DSA003669

    Untitled

    Abstract: No abstract text available
    Text: APT10030L2VR 0.300Ω 1000V 33A POWER MOS V MOSFET TO-264 Max Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®


    Original     		PDF APT10030L2VR O-264 O-264

    Untitled

    Abstract: No abstract text available
    Text: APT10030L2VR 1000V 33A 0.300Ω POWER MOS V MOSFET TO-264 Max Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®


    Original     		PDF APT10030L2VR O-264 O-264

    100A 1000V mosfet

    Abstract: No abstract text available
    Text: APTM100U13S Single switch Series & parallel diodes MOSFET Power Module SK VDSS = 1000V RDSon = 130mΩ max @ Tj = 25°C ID = 65A @ Tc = 25°C Application CR1 D S • • • Motor control Switched Mode Power Supplies Uninterruptible Power Supplies Features


    Original     		PDF APTM100U13S 100A 1000V mosfet

    APTM100SKM90

    Abstract: No abstract text available
    Text: APTM100SKM90 Q1 G1 OUT S1 CR2 0/VBUS G1 VBUS 0/VBUS OUT S1 Application • AC and DC motor control • Switched Mode Power Supplies Features • Power MOS 7 MOSFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Avalanche energy rated


    Original     		PDF APTM100SKM90 APTM100SKM90­ APTM100SKM90

    APTM100DAM90

    Abstract: No abstract text available
    Text: APTM100DAM90 CR1 OUT Q2 G2 S2 0/VBUS VBUS 0/VBUS OUT S2 G2 Application • AC and DC motor control • Switched Mode Power Supplies • Power Factor Correction Features • Power MOS 7 MOSFETs - Low RDSon - Low input and Miller capacitance - Low gate charge


    Original     		PDF APTM100DAM90 APTM100DAM90­ APTM100DAM90

    RURG30100

    Abstract: RURG3070 RURG3080 RURG3090
    Text: S E M I C O N D U C T O R RURG3070, RURG3080, RURG3090, RURG30100 30A, 700V - 1000V Ultrafast Diodes April 1995 Features Package • Ultrafast with Soft Recovery . . . . . . . . . . . . . . . . . . . . . <110ns JEDEC STYLE 2 LEAD TO-247 ANODE o • Operating Temperature . . . . . . . . . . . . . . . . . . . . . . . . .+175 C


    Original     		PDF RURG3070, RURG3080, RURG3090, RURG30100 110ns O-247 RURG3090 RURG30100 RURG3070 RURG3080

    Untitled

    Abstract: No abstract text available
    Text: J W S RHRG5070, RHRG5080, RHRG5090, RHRG50100 Semiconductor April 1995 File Number 3106.2 50A, 700V- 1000V Hyperfast Diodes Features RHRG5070, RHRG5080, RHRG5090 and RHRG50100 TA49066 are hyperfast diodes with soft recovery character­ istics (tRR < 75ns). They have half the recovery time of


    OCR Scan     		PDF RHRG5070, RHRG5080, RHRG5090, RHRG50100 RHRG5090 TA49066)