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Microchip Technology Inc APT1001RBVFRG MOSFET N-CH 1000V 11A TO247
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	APT1001RBVFRG	Tube			40	1 - 10 - 100 $15.34 1000 $15.34 10000 $15.34	Buy Now
Avnet Americas	APT1001RBVFRG	Tube		32 Weeks	40	1 - 10 - 100 $12.98481 1000 $12.38779 10000 $12.38779	Buy Now
Mouser Electronics	APT1001RBVFRG					1 $15.34 10 $15.34 100 $13.22 1000 $13.22 10000 $13.22	Get Quote
Newark	APT1001RBVFRG	Bulk			40	1 $15.34 10 $15.34 100 $13.22 1000 $12.43 10000 $12.43	Buy Now
Microchip Technology Inc	APT1001RBVFRG	Tube		32 Weeks		1 $15.34 10 $15.34 100 $13.22 1000 $12.15 10000 $11.76	Buy Now

Onlinecomponents.com	APT1001RBVFRG		14			1 - 10 $20.45 100 $13.77 1000 $13.11 10000 $13.11	Buy Now
TME	APT1001RBVFRG				1	1 $22.05 10 $17.73 100 $17.73 1000 $17.73 10000 $17.73	Get Quote
NAC	APT1001RBVFRG	Tube			25	1 $14.63 10 $14.63 100 $13.27 1000 $12.13 10000 $12.13	Buy Now
Richardson RFPD	APT1001RBVFRG				40	1 - 10 - 100 $13.14 1000 $13.14 10000 $13.14	Buy Now
Avnet Silica	APT1001RBVFRG			34 Weeks	40	1 - 10 - 100 - 1000 - 10000 -	Buy Now
EBV Elektronik	APT1001RBVFRG			33 Weeks	40	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Master Electronics	APT1001RBVFRG		14			1 - 10 $20.45 100 $13.77 1000 $13.11 10000 $13.11	Buy Now
Microsemi Corporation APT1001RBVFRG N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Pulsed Drain Current (IDM): 44 A; No. of Elements: 1; Maximum Drain-Source On Resistance: 1 ohm;
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Vyrian	APT1001RBVFRG		300			1 - 10 - 100 - 1000 - 10000 -	Get Quote

APT1001RBVFR Datasheets (2)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
APT1001RBVFR		Advanced Power Technology	POWER MOS V FREDFET		Original	PDF
APT1001RBVFR		Advanced Power Technology	N-Channel enhancement mode power MOSFET		Original	PDF

APT1001RBVFR Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
Untitled Abstract: No abstract text available Text: APT1001RBVFR APT1001RSVFR 1000V POWER MOS V FREDFET 11A 1.00Ω BVFR D3PAK TO-247 Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®	Original	APT1001RBVFR APT1001RSVFR O-247 O-247 APT1001RBVFR	PDF
APT1001RBVFR Abstract: No abstract text available Text: APT1001RBVFR 11A 1.000Ω 1000V POWER MOS V FREDFET Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V	Original	APT1001RBVFR O-247 O-247 APT1001RBVFR	PDF
Untitled Abstract: No abstract text available Text: APT1001RBVFR APT1001RSVFR 1000V 1.00Ω 11A BVFR POWER MOS V FREDFET D3PAK TO-247 Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®	Original	APT1001RBVFR APT1001RSVFR O-247 O-247 APT1001RBVFR	PDF
APT1001RBVFR Abstract: APT1001RSVFR Text: APT1001RBVFR APT1001RSVFR 1000V POWER MOS V FREDFET 11A 1.00Ω BVFR D3PAK TO-247 Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®	Original	APT1001RBVFR APT1001RSVFR O-247 O-247 APT1001RBVFR APT1001RSVFR	PDF
BD119 Abstract: BC148A APT1002RBNR 1000 volt npn BD109 APT5025AN APT904R2BN BD107 APT1001R3AN APT1004RBNR Text: STI Type: AD818 Notes: Polarity: NPN Power Dissipation: .50 VCEO: 20 hFE min: 200 hFE max: 600 hFE A: .01 Matching hFE: 10 Matching VBE: 2.0 Tracking: 5.0 Case Style: TO-71 Industry Type: AD818 STI Type: AD818DIE Industry Type: AD818DIE V CEO: 25 ICBO ICEX: 20	Original	AD818 AD818DIE AD820 AD821 AD820DIE O-204AA/TO-3 BD119 BC148A APT1002RBNR 1000 volt npn BD109 APT5025AN APT904R2BN BD107 APT1001R3AN APT1004RBNR	PDF
catalog mosfet Transistor smd Abstract: APTGU140A60T APTGU180DA120 military resistors catalog APTLM50H10FRT APT40M35JVFR 24 volt output smps design APT5SC120K APT50M50JVR induction furnace using igbt Text: 1 Advanced Power Technology Technology… Beginning in 1984 with the introduction of Power MOS IV , APT has maintained a position at the forefront of power semiconductor technology. Our focus is on the high voltage, high power and high performance segments of this market. Our commitment is to maintain and enhance	Original		PDF
sot-227 footprint Abstract: VRF2933 SP6-P ARF1511 DRF1200 APT35GP120JDQ2 ARF521 TO-247 smps welder inverter APTGT25DA120D1G Text: Power Semiconductors Power Modules & RF Power MOSFETs 2006 Power Products Group 1 About Microsemi Microsemi Power Products Group was created in 2006 with the acquisition of Advanced Power Technology, Inc., a company at the forefront of power semiconductor technology since its founding in 1984.	Original		PDF
APT100GF60LR Abstract: 1200 volt mosfet FREDFETs sot-227 footprint APT75GP120JDF3 APT609RK3VFR APT8075BVR APT5010jvr APT20M19JVR APT1001RBVR Text: Discrete Power Products 2003 Advanced Power Technology Technology… Beginning in 1984 with the introduction of Power MOS IV , APT has maintained a position at the forefront of power semiconductor technology. Our focus is on the high voltage, high power and high performance segments of	Original		PDF
APT1001 Abstract: APT1001RBVFR Text: APT1001RBVFR A dvanced P o w er Te c h n o lo g y 1000V POWER MOS V 11A 1.000Q FREDFET Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V	OCR Scan	APT1001RBVFR O-247 APT1001 O-247AD MIL-STD-750 00A/HS,	PDF
nt 6600 G Abstract: APT60M75JVR APT30M40JVR APT20M45B APT50M50JVR apt12080jvr 130-131 apt5014lvr APT5020BVFR apt40m70jvr Text: MOSFET Selector Guide ADVANCED POW ER Te c h n o l o g y APT » V,>ss ^DS ON ID(cont) C JP F ) Part Number Volts Ohms Amps Watts Typ APT1201R6BVR 1200 1.600 8 280 3050 APT1201R5BVR 1.500 10 370 3700 APT1001RBVR 11 280 3050 1000 1.000 APT10086BVR 0.860 13 370 3700	OCR Scan	APT1201R6BVR APT1201R5BVR APT1001RBVR APT10086BVR APT8075BVR APT8065BVR APT8056BVR APT6040BVR APT6035BVR APT6030BVR nt 6600 G APT60M75JVR APT30M40JVR APT20M45B APT50M50JVR apt12080jvr 130-131 apt5014lvr APT5020BVFR apt40m70jvr	PDF
Untitled Abstract: No abstract text available Text: A P T 10 0 1 R B V F R ADVANCED W 7Æ P o w e r T e c h n o lo g y 1000v POWER MOS V i 11 a -i.ooon FREDFET Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V	OCR Scan	1000v O-247 APT1001 MIL-STD-750 O-247AD	PDF
8065S Abstract: 6015L 20M45S 40M70JVR T5027S 5027s 12080L 6015lv 8030JV 8030L Text: ADVANCED PO W ER Te c h n o lo g y Table of Contents Page No. 2 Features/Benefits Product Selector Guide Product Datasheets US and Canadian Representalive Sales Offices US and Canadian D istributor Sales Offices International Representative and D istributor Sales Offices	OCR Scan	APT10M 11LVR 25BVFR PT20M APT1001RBVFR 6015L 0151V 6035S APT6040BVR 8065S 20M45S 40M70JVR T5027S 5027s 12080L 6015lv 8030JV 8030L	PDF
1001RBVFR Abstract: 1001RBV 1001rb Text: A dvanced P o w er Te c h n o lo g y ' A P T 1001RBVFR 1000V 11A 1.000Í2 POWER MOS V FREDFET I Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V	OCR Scan	1001RBVFR O-247 APT1001RBVFR O-247AD 1001RBV 1001rb	PDF