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    100A MOSFET IXYS Search Results

    100A MOSFET IXYS Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation

    100A MOSFET IXYS Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    IXFZ140N25T

    Abstract: No abstract text available
    Text: Advance Technical Information IXFZ140N25T GigaMOSTM HiperFETTM Power MOSFET VDSS ID25 RDS on ≤ ≤ trr (Electrically Isolated Tab) N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode 250V 100A Ω 17mΩ 200ns DE475 Test Conditions Maximum Ratings


    Original     		PDF IXFZ140N25T 200ns DE475 5-10-A IXFZ140N25T

    IXTN110N20L2

    Abstract: NC182
    Text: Advance Technical Information Linear L2TM Power MOSFET w/Extended FBSOA IXTN110N20L2 VDSS ID25 = 200V = 100A ≤ 24mΩ Ω RDS on N-Channel Enhancement Mode Guaranteed FBSOA Avalanche Rated miniBLOC, SOT-227 E153432 S Symbol Test Conditions Maximum Ratings


    Original     		PDF IXTN110N20L2 OT-227 E153432 100ms 110N20L2 IXTN110N20L2 NC182

    Untitled

    Abstract: No abstract text available
    Text: Advance Technical Information Linear L2TM Power MOSFET w/Extended FBSOA VDSS ID25 IXTN110N20L2 = 200V = 100A ≤ 24mΩ Ω RDS on N-Channel Enhancement Mode Guaranteed FBSOA Avalanche Rated miniBLOC, SOT-227 E153432 S Symbol Test Conditions Maximum Ratings


    Original     		PDF IXTN110N20L2 OT-227 E153432 100ms 110N20L2

    Untitled

    Abstract: No abstract text available
    Text: Advance Technical Information GigaMOSTM HiperFETTM Power MOSFET VDSS ID25 IXFZ140N25T RDS on ≤ ≤ trr (Electrically Isolated Tab) N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode 250V 100A Ω 17mΩ 200ns DE475 D D D G Symbol Test Conditions


    Original     		PDF IXFZ140N25T 200ns DE475 5-10-A

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Technical Information TrenchT2TM Power MOSFET IXTA100N04T2 IXTP100N04T2 VDSS ID25 = 40V = 100A Ω ≤ 7mΩ RDS on N-Channel Enhancement Mode Avalanche Rated TO-263 (IXTA) G Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 175°C 40 V


    Original     		PDF IXTA100N04T2 IXTP100N04T2 O-263 100N04T2

    IXTP100N04T2

    Abstract: IXTA100N04T2 100N04
    Text: Preliminary Technical Information TrenchT2TM Power MOSFET IXTA100N04T2 IXTP100N04T2 VDSS ID25 = 40V = 100A Ω ≤ 7mΩ RDS on N-Channel Enhancement Mode Avalanche Rated TO-263 (IXTA) G Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 175°C 40 V


    Original     		PDF IXTA100N04T2 IXTP100N04T2 O-263 100N04T2 IXTP100N04T2 IXTA100N04T2 100N04

    Untitled

    Abstract: No abstract text available
    Text: Advance Technical Information HiperFETTM Power MOSFET Q3-Class VDSS ID25 IXFB100N50Q3 RDS on trr = = ≤ ≤ 500V 100A Ω 49mΩ 250ns N-Channel Enhancement Mode Fast Intrinsic Rectifier PLUS264TM Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C


    Original     		PDF IXFB100N50Q3 250ns PLUS264TM 100N50Q3

    IXFB100N50

    Abstract: No abstract text available
    Text: Advance Technical Information IXFB100N50Q3 HiperFETTM Power MOSFET Q3-Class VDSS ID25 RDS on trr = = ≤ ≤ 500V 100A Ω 49mΩ 250ns N-Channel Enhancement Mode Fast Intrinsic Rectifier PLUS264TM Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C


    Original     		PDF IXFB100N50Q3 250ns PLUS264TM 100N50Q3 IXFB100N50

    DE275X2-102N06A

    Abstract: 102N06 DE275X2 102N06A 400P DE-27
    Text: Directed Energy, Inc. IXYS Company An ♦ ♦ ♦ ♦ ♦ DE275X2-102N06A RF Power MOSFET Preliminary Data Sheet Common Source Push-Pull Pair N-Channel Enhancement Mode Low Qg and Rg High dv/dt Nanosecond Switching The DE275X2-102N06A is a matched pair of RF power MOSFET devices in


    Original     		PDF DE275X2-102N06A DE275X2-102N06A 102N06 DE275X2 102N06A 400P DE-27

    DE275X2-501N16A

    Abstract: No abstract text available
    Text: Directed Energy, Inc. IXYS Company An ♦ ♦ ♦ ♦ ♦ DE275X2-501N16A RF Power MOSFET Preliminary Data Sheet Common Source Push-Pull Pair N-Channel Enhancement Mode Low Qg and Rg High dv/dt Nanosecond Switching The DE275X2-501N16A is a matched pair of RF power MOSFET devices in


    Original     		PDF DE275X2-501N16A DE275X2-501N16A

    102N12

    Abstract: Directed Energy Directed 400P DE375-102N12A
    Text: Directed Energy, Inc. An ♦ ♦ ♦ ♦ ♦ DE375-102N12A IXYS Company RF Power MOSFET Preliminary Data Sheet N-Channel Enhancement Mode Low Qg and Rg High dv/dt Nanosecond Switching 50MHz Maximum Frequency Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C


    Original     		PDF DE375-102N12A 50MHz 102N12 Directed Energy Directed 400P DE375-102N12A

    400P

    Abstract: DE375-501N21A mosfet SPICE MODEL
    Text: Directed Energy, Inc. An ♦ ♦ ♦ ♦ ♦ DE375-501N21A IXYS Company RF Power MOSFET Preliminary Data Sheet N-Channel Enhancement Mode Low Qg and Rg High dv/dt Nanosecond Switching 50MHz Maximum Frequency Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C


    Original     		PDF DE375-501N21A 50MHz 400P DE375-501N21A mosfet SPICE MODEL

    400P

    Abstract: DE475-501N44A Directed Energy
    Text: Directed Energy, Inc. An ♦ ♦ ♦ ♦ ♦ DE475-501N44A IXYS Company RF Power MOSFET Preliminary Data Sheet N-Channel Enhancement Mode Low Qg and Rg High dv/dt Nanosecond Switching 30MHz Maximum Frequency Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C


    Original     		PDF DE475-501N44A 30MHz 400P DE475-501N44A Directed Energy

    400P

    Abstract: DE475-102N21A
    Text: Directed Energy, Inc. An ♦ ♦ ♦ ♦ ♦ DE475-102N21A IXYS Company RF Power MOSFET Preliminary Data Sheet N-Channel Enhancement Mode Low Qg and Rg High dv/dt Nanosecond Switching 30MHz Maximum Frequency Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C


    Original     		PDF DE475-102N21A 30MHz 400P DE475-102N21A

    nec 2401

    Abstract: 1000 volt mosfet Directed Energy 400P DE475-102N20A
    Text: Directed Energy, Inc. An DE475-102N20A IXYS Company RF Power MOSFET Preliminary Data Sheet N-Channel Enhancement Mode Avalanche Rated Low Qg and Rg High dv/dt Nanosecond Switching Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1000 V VDGR


    Original     		PDF DE475-102N20A nec 2401 1000 volt mosfet Directed Energy 400P DE475-102N20A

    DE275-501N16A

    Abstract: 92-0002 DE275-501N16
    Text: Directed Energy, Inc. An DE275-501N16A IXYS Company RF Power MOSFET Preliminary Data Sheet N-Channel Enhancement Mode Avalanche Rated Low Qg and Rg High dv/dt Nanosecond Switching Symbol Test Conditions VDSS TJ = 25°C to 150°C 500 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ


    Original     		PDF DE275-501N16A DE275-501N16A 92-0002 DE275-501N16

    DE375-102N10A

    Abstract: No abstract text available
    Text: Directed Energy, Inc. An DE375-102N10A IXYS Company RF Power MOSFET Preliminary Data Sheet N-Channel Enhancement Mode Avalanche Rated Low Qg and Rg High dv/dt Symbol Test Conditions VDSS TJ = 25°C to 150°C 1000 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 1000


    Original     		PDF DE375-102N10A DE375-102N10A

    102N06A

    Abstract: 400P DE275-102N06A 10-DOF 102N06
    Text: Directed Energy, Inc. An DE275-102N06A IXYS Company RF Power MOSFET Preliminary Data Sheet N-Channel Enhancement Mode Avalanche Rated Low Qg and Rg High dv/dt Nanosecond Switching Symbol Test Conditions VDSS TJ = 25°C to 150°C 1000 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ


    Original     		PDF DE275-102N06A 102N06A 400P DE275-102N06A 10-DOF 102N06

    Directed Energy

    Abstract: DE275-102N06A
    Text: Directed Energy, Inc. An DE275-102N06A IXYS Company RF Power MOSFET Preliminary Data Sheet N-Channel Enhancement Mode Avalanche Rated Low Qg and Rg High dv/dt Symbol Test Conditions VDSS TJ = 25°C to 150°C 1000 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 1000


    Original     		PDF DE275-102N06A Directed Energy DE275-102N06A

    DE375-501N16A

    Abstract: No abstract text available
    Text: Directed Energy, Inc. An DE375-501N16A IXYS Company RF Power MOSFET Preliminary Data Sheet N-Channel Enhancement Mode Avalanche Rated Low Qg and Rg High dv/dt Symbol Test Conditions VDSS TJ = 25°C to 150°C 500 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 500


    Original     		PDF DE375-501N16A DE375-501N16A

    IXAN0021

    Abstract: MOSFET Based Chopper IXAN0022 VWM350-0075P FMM150-0075P IXUC100N055 IXUC200N055 VMM1500-0075P trench relay MOSFET Based Chopper applications
    Text: IXAN0021 New Trench Power MOSFETs in Isolated Packages Abstract Andreas Lindemann IXYS Semiconductor GmbH Postfach 1180, D { 68619 Lampertheim www.IXYS.net This paper presents a new family of power semiconductor components with low voltage trench MOSFETs in isolated packages: MOSFET and packaging technologies are brie y


    Original     		PDF IXAN0021 IXAN0022 IXAN0021 MOSFET Based Chopper IXAN0022 VWM350-0075P FMM150-0075P IXUC100N055 IXUC200N055 VMM1500-0075P trench relay MOSFET Based Chopper applications

    nec 2401

    Abstract: 501N04 QGS 80W 30 ohm mosfet High-Speed Switching 100mhz bd9883 DE150-501N04A Directed Energy Directed RF POWER MOSFET DE-150-501N04
    Text: Directed Energy, Inc. An DE150-501N04A IXYS Company RF Power MOSFET Preliminary Data Sheet N-Channel Enhancement Mode Avalanche Rated Low Qg and Rg High dv/dt Nanosecond Switching Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 500 V VDGR


    Original     		PDF DE150-501N04A nec 2401 501N04 QGS 80W 30 ohm mosfet High-Speed Switching 100mhz bd9883 DE150-501N04A Directed Energy Directed RF POWER MOSFET DE-150-501N04

    nec 2401

    Abstract: Directed Energy QGS 80W 30 ohm mosfet High-Speed Switching 100mhz 201N09 DE150-201N09A Directed
    Text: Directed Energy, Inc. An DE150-201N09A IXYS Company RF Power MOSFET Preliminary Data Sheet N-Channel Enhancement Mode Avalanche Rated Low Qg and Rg High dv/dt Nanosecond Switching Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 200 V VDGR


    Original     		PDF DE150-201N09A 1100P nec 2401 Directed Energy QGS 80W 30 ohm mosfet High-Speed Switching 100mhz 201N09 DE150-201N09A Directed

    nec 2401

    Abstract: DE150-102N02A QGS 80W 30 ohm 150P Directed Energy spice
    Text: Directed Energy, Inc. An DE150-102N02A IXYS Company RF Power MOSFET Preliminary Data Sheet N-Channel Enhancement Mode Avalanche Rated Low Qg and Rg High dv/dt Nanosecond Switching Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1000 V VDGR


    Original     		PDF DE150-102N02A 500Pf nec 2401 DE150-102N02A QGS 80W 30 ohm 150P Directed Energy spice