501N04 Search Results

501N04 Price and Stock

Filter by Manufacturer


IXYS Corporation DE150-501N04A Mosfet, N, Rf, 500V, De150; Drain Source Voltage Vds:500V; Continuous Drain Current Id:4.5A; Power Dissipation:200W; Operating Frequency Min:-; Operating Frequency Max:100Mhz; No. Of Pins:6Pins; Operating Temperature Max:175°C; Msl:-Rohs Compliant: Yes \|Ixys Rf DE150-501N04A
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Newark	DE150-501N04A	Bulk			1	1 - 10 - 100 - 1000 - 10000 -	Buy Now
SMC Corporation of America PFMB7501-N04-E Flow Switch, for air, 2 color, digital,5-500L/min,1/2NPT, PNP+anal, leadwire \| SMC Corporation PFMB7501-N04-E
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
RS	PFMB7501-N04-E	Bulk	1		1	1 $564.93 10 $564.93 100 $564.93 1000 $564.93 10000 $564.93	Buy Now
SMC Corporation of America PFMC7501-N04-B FLOW SWITCH FOR AIR, DIGITAL, 3 COLOR, IP65, 5-500 L/MIN \| SMC Corporation PFMC7501-N04-B
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
RS	PFMC7501-N04-B	Bulk		5 Weeks	1	1 $600 10 $600 100 $600 1000 $600 10000 $600	Get Quote
SMC Corporation of America PFMC7501-N04-C FLOW SWITCH FOR AIR, DIGITAL, 3 COLOR, IP65, 5-500 L/MIN \| SMC Corporation PFMC7501-N04-C
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
RS	PFMC7501-N04-C	Bulk		5 Weeks	1	1 $600 10 $600 100 $600 1000 $600 10000 $600	Get Quote
SMC Corporation of America PFMC7501-N04-LN FLOW SWITCH FOR AIR, DIGITAL, 3 COLOR, IP65, 5-500 L/MIN \| SMC Corporation PFMC7501-N04-LN
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
RS	PFMC7501-N04-LN	Bulk		5 Weeks	1	1 $609.6 10 $609.6 100 $609.6 1000 $609.6 10000 $609.6	Get Quote

Find more 501N04 price and stock on Findchips.com

501N04 Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
501N04		Directed Energy	DE-SERIES FAST POWER MOSFET		Original	PDF

501N04 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
501N04 Abstract: DE-150-501N04 DE-150 Text: PRELIMINARY SPECIFICATIONS DE-150 501N04 4.5A, 500V, 1.5Ω US Patents 4891686, 5640045 Foreign Patents Pending 04/1999 Directed Energy, Incorporated 2401 Research Blvd, Suite 108 Fort Collins, CO USA 80526 (970) 493-1901 FAX (970) 493-1903 INTERNET www.dirnrg.com	Original	PDF	DE-150 501N04 150oC 501N04 DE-150-501N04
nec 2401 Abstract: DE150-501N04A 200W MOSFET POWER AMP DE-150-501N04 rf power mosfet 50MEG kp60 Text: DE150-501N04A RF Power MOSFET N-Channel Enhancement Mode Low Qg and Rg High dv/dt Nanosecond Switching Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 500 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 500 V VGS Continuous ±20 V VGSM Transient	Original	PDF	DE150-501N04A nec 2401 DE150-501N04A 200W MOSFET POWER AMP DE-150-501N04 rf power mosfet 50MEG kp60
nec 2401 Abstract: 501N04 QGS 80W 30 ohm mosfet High-Speed Switching 100mhz bd9883 DE150-501N04A Directed Energy Directed RF POWER MOSFET DE-150-501N04 Text: Directed Energy, Inc. An DE150-501N04A IXYS Company RF Power MOSFET Preliminary Data Sheet N-Channel Enhancement Mode Avalanche Rated Low Qg and Rg High dv/dt Nanosecond Switching Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 500 V VDGR	Original	PDF	DE150-501N04A nec 2401 501N04 QGS 80W 30 ohm mosfet High-Speed Switching 100mhz bd9883 DE150-501N04A Directed Energy Directed RF POWER MOSFET DE-150-501N04
200W MOSFET POWER AMP Abstract: DE150-501N04A rf power mosfet 900 v 9 amp mosfet PIN diode SPICE model Text: DE150-501N04A RF Power MOSFET N-Channel Enhancement Mode Low Qg and Rg High dv/dt Nanosecond Switching Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 500 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 500 V VGS Continuous ±20 V VGSM Transient	Original	PDF	DE150-501N04A 501N04A 200W MOSFET POWER AMP DE150-501N04A rf power mosfet 900 v 9 amp mosfet PIN diode SPICE model
13.56MHZ 3KW GENERATOR Abstract: 3KW GENERATOR mosfet 5kw high power rf 5kw switching power supply design HIGH FREQUENCY 5kw power Transformer circuit diagram of 13.56MHz RF Generator mosfet 3kw 3kW AND 5kW HALF-BRIDGE CLASS-D RF GENERATORS 3kw mosfet equivalent circuit of power transformer 11kv Text: DIRECTED ENERGY, INC. TECHNICAL NOTE 3kW AND 5kW HALF-BRIDGE CLASS-D RF GENERATORS AT 13.56MHz WITH 89% EFFICENCY AND LIMITED FREQUENCY AGILITY Abstract DEI / IXYS has developed an RF generator design for very high power at a ISM frequency. of 13.56MHz, using a pair of DE375-102N12A	Original	PDF	56MHz 56MHz, DE375-102N12A DEIC420 DE375-102N12A 0-471-03018-X 13.56MHZ 3KW GENERATOR 3KW GENERATOR mosfet 5kw high power rf 5kw switching power supply design HIGH FREQUENCY 5kw power Transformer circuit diagram of 13.56MHz RF Generator mosfet 3kw 3kW AND 5kW HALF-BRIDGE CLASS-D RF GENERATORS 3kw mosfet equivalent circuit of power transformer 11kv
high power rf 10kW Abstract: HF power amplifier 1000W DE-275 RF Amplifiers 101N09 hf amplifier 1000w DE-150 3RH1140-1AD00 101N30 102N02 Text: T H E P U L S E O F T H E F U T U R E DE-SERIES FAST POWER MOSFETS DE-150 SERIES The DE-150 Series are the lowest power devices in the DE-Series family. However, their speed and frequency are the highest. The upper operational frequency of the DE-150 Series is approximately 110MHz. The switching speed of the device family is on the order	Original	PDF	DE-150 DE-150 110MHz. DE-375X2 102N20 501N40 high power rf 10kW HF power amplifier 1000W DE-275 RF Amplifiers 101N09 hf amplifier 1000w 3RH1140-1AD00 101N30 102N02
TCI balun Abstract: tci hf antenna 225 400 MHz transmitting antenna TCI antenna balun 50 kW tci model 501 TCI 501 501-1-N hf antenna balun TCI antenna balun Text: MODEL 501 Short Range Antenna Most communicators are well aware of the problems associated with “close-in” HF communications. Frequently it is easier to raise a station 2,000 km away than it is one’s base of operations 100 miles distant. To a large extent, the problems of short-range	Original	PDF	501-N-02 501-N-03 501-N-04 501-N-06 TCI balun tci hf antenna 225 400 MHz transmitting antenna TCI antenna balun 50 kW tci model 501 TCI 501 501-1-N hf antenna balun TCI antenna balun
503-4-N Abstract: 503-3-N TCI vertical log periodic antenna TCI antenna Antenna TCI tci model 501 TCI antenna 503 RS-222C 5030-304 Text: MODEL 503 Vertical Curtain Antenna TCI’s Model 503 family of antennas provides efficient long-haul or sectoral coverage service. The Model 503 is a vertically polarized log-periodic dipole antenna with a narrow, low-angle elevation plane pattern, suitable for medium or long distance	Original	PDF	501-3H-N 503-4-N 503-5-N 503-6-N 503-7-N 503-10-N 503-4-N 503-3-N TCI vertical log periodic antenna TCI antenna Antenna TCI tci model 501 TCI antenna 503 RS-222C 5030-304
mospower applications handbook Abstract: MOSFET power inverter 600W circuit diagram HEXFET Power MOSFET designer manual Rudy Severns "mospower applications handbook" 02N05 Siliconix Handbook 501n04 MOSFET designer manual Gate Drive Characteristics Text: DIRECTED ENERGY INC 204^=55 50E D D 0 D 01 13 473 • DIRE DE-SERIES MOSFETS m m M m INTRODUCTION TO THE DE-SERIES E -M SYM M ETRY - E LE C TR IC AL ADVANTAGES THERM AL M E C H A N IC A L ADVANTAGES GATE DR IVE CIRCU ITR Y Directed Energy, Inc. 2301 Research Blvd., Ste. 101	OCR Scan	PDF	00D0113 and01N 201P11-00* 101N30-00 P12-00* DE-375 -59S-- 102N11-00 501N21-00 mospower applications handbook MOSFET power inverter 600W circuit diagram HEXFET Power MOSFET designer manual Rudy Severns "mospower applications handbook" 02N05 Siliconix Handbook 501n04 MOSFET designer manual Gate Drive Characteristics
501N04 Abstract: DE-275 101N30 5kw power amplifier amplifier 1000W 8 DE-375 101N09 DE-275 Directed Energy 101N30 102N05 Text: e DE-SERIES FAST POWER MOSFETS DE-150 SERIES The DE-150 SERIES are the lowest power devices in the D E-SERIES family. However their speed and frequency are the highest. The upper operational frequency of the DE-150 SERIES is approximately 110MHz. The switching speed of the device	OCR Scan	PDF	DE-150 110MHz. 501N04 30MHz. DE-375 102N10 501N21 DE-275 101N30 5kw power amplifier amplifier 1000W 8 101N09 DE-275 Directed Energy 101N30 102N05