100B0R2B Search Results

100B0R2B Price and Stock

Filter by Manufacturer


Kyocera AVX Components 100B0R2BAN1500XB100 MLC A/B/R - Waffle Pack (Alt: 100B0R2BAN1500XB100)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	100B0R2BAN1500XB100	Waffle Pack		18 Weeks	100	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Mouser Electronics	100B0R2BAN1500XB100					1 $7.75 10 $6.72 100 $5.17 1000 $4.39 10000 $4.39	Get Quote
Kyocera AVX Components 100B0R2BTN1500XC100 ATC PART, 100B0R2BTN1500XC100 - Waffle Pack (Alt: 100B0R2BTN1500XC100)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	100B0R2BTN1500XC100	Waffle Pack		16 Weeks	100	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Mouser Electronics	100B0R2BTN1500XC100					1 $7.42 10 $6.44 100 $4.95 1000 $4.2 10000 $4.2	Get Quote
Richardson RFPD	100B0R2BTN1500XC100				100	1 - 10 - 100 $4.11 1000 $2.48 10000 $1.77	Buy Now
Kyocera AVX Components 100B0R2BTN1500XT MLC A/B/R - Custom Tape W/Leader (Alt: 100B0R2BTN1500XT)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	100B0R2BTN1500XT	Tape w/Leader		16 Weeks	500	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Kyocera AVX Components 100B0R2BW500XT MLC A/B/R - Custom Tape W/Leader (Alt: 100B0R2BW500XT)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	100B0R2BW500XT	Tape w/Leader		16 Weeks	500	1 - 10 - 100 - 1000 - 10000 -	Get Quote
TTI	100B0R2BW500XT	Reel			500	1 - 10 - 100 - 1000 $3.13 10000 $3.13	Buy Now
Kyocera AVX Components 100B0R2BT500XT1K MLC A/B/R - Custom Tape W/Leader (Alt: 100B0R2BT500XT1K)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	100B0R2BT500XT1K	Tape w/Leader		16 Weeks	1,000	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Richardson RFPD	100B0R2BT500XT1K				1,000	1 - 10 - 100 - 1000 $2.14 10000 $1.55	Buy Now

Find more 100B0R2B price and stock on Findchips.com

100B0R2B Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
100B0R1BW Abstract: 100A1R5BW A113 A114 A115 AN1955 C101 JESD22 MW6IC2015GNBR1 MW6IC2015NBR1 Text: Freescale Semiconductor Technical Data Document Number: MW6IC2015N Rev. 0, 2/2006 RF LDMOS Wideband Integrated Power Amplifiers The MW6IC2015N wideband integrated circuit is designed for base station applications. It uses Freescale’s newest High Voltage 26 to 32 Volts LDMOS	Original	MW6IC2015N MW6IC2015N MW6IC2015NBR1 MW6IC2015GNBR1 100B0R1BW 100A1R5BW A113 A114 A115 AN1955 C101 JESD22 MW6IC2015GNBR1	PDF
100B101JW Abstract: 232272461009 465B A114 A115 AN1955 JESD22 MRF7S18170H MRF7S18170HR3 MRF7S18170HSR3 Text: Freescale Semiconductor Technical Data Document Number: MRF7S18170H Rev. 0, 10/2006 RF Power Field Effect Transistors MRF7S18170HR3 MRF7S18170HSR3 N - Channel Enhancement - Mode Lateral MOSFETs Designed for CDMA base station applications with frequencies from 1805 to	Original	MRF7S18170H MRF7S18170HR3 MRF7S18170HSR3 MRF7S18170HR3 DataMRF7S18170H 100B101JW 232272461009 465B A114 A115 AN1955 JESD22 MRF7S18170H MRF7S18170HSR3	PDF
Untitled Abstract: No abstract text available Text: Freescale Semiconductor Technical Data Document Number: MRF5S19060N Rev. 4, 8/2005 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF5S19060NR1 MRF5S19060NBR1 MRF5S19060MR1 MRF5S19060MBR1 Designed for broadband commercial and industrial applications with	Original	MRF5S19060N MRF5S19060NR1 MRF5S19060NBR1 MRF5S19060MR1 MRF5S19060MBR1 MRF5S19060N	PDF
MRF6S21140HSR3 Abstract: J932 Text: Freescale Semiconductor Technical Data Rev. 2, 1/2005 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for W- CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s . To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L	Original	MRF6S21140HR3 MRF6S21140HSR3 J932	PDF
A113 Abstract: AN1955 MRF5S19060MBR1 MRF5S19060MR1 MRF5S19060NBR1 MRF5S19060NR1 Text: MOTOROLA Freescale Semiconductor, Inc. Order this document by MRF5S19060N/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors MRF5S19060NR1 Freescale Semiconductor, Inc. N - Channel Enhancement - Mode Lateral MOSFETs MRF5S19060NBR1	Original	MRF5S19060N/D MRF5S19060NR1 MRF5S19060NBR1 MRF5S19060NR1 MRF5S19060NBR1 MRF5S19060MR1 MRF5S19060MBR1 A113 AN1955 MRF5S19060MBR1	PDF
gsm signal amplifier Abstract: 500 watts amplifier schematic diagram A113 A114 A115 AN1955 C101 JESD22 MW6IC2015GNBR1 MW6IC2015NBR1 Text: Freescale Semiconductor Technical Data Document Number: MW6IC2015N Rev. 1, 5/2006 RF LDMOS Wideband Integrated Power Amplifiers The MW6IC2015N wideband integrated circuit is designed for base station applications. It uses Freescale’s newest High Voltage 26 to 32 Volts LDMOS	Original	MW6IC2015N MW6IC2015N MW6IC2015NBR1 MW6IC2015GNBR1 gsm signal amplifier 500 watts amplifier schematic diagram A113 A114 A115 AN1955 C101 JESD22 MW6IC2015GNBR1	PDF
IM324 Abstract: No abstract text available Text: Freescale Semiconductor Technical Data Document Number: MRF5S19060N Rev. 4, 8/2005 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF5S19060NR1 MRF5S19060NBR1 MRF5S19060MR1 MRF5S19060MBR1 Designed for broadband commercial and industrial applications with	Original	MRF5S19060N MRF5S19060NR1 MRF5S19060NBR1 MRF5S19060MR1 MRF5S19060MBR1 MRF5S19060N IM324	PDF
A114 Abstract: AN1955 JESD22 MRF6S21140HR3 MRF6S21140HSR3 465B Text: Freescale Semiconductor Technical Data MRF6S21140H/D Rev. 1, 11/2004 The RF MOSFET Line RF Power Field Effect Transistors MRF6S21140HR3 MRF6S21140HSR3 N - Channel Enhancement - Mode Lateral MOSFETs Designed for W- CDMA base station applications with frequencies from 2110	Original	MRF6S21140H/D MRF6S21140HR3 MRF6S21140HSR3 MRF6S21140HR3 A114 AN1955 JESD22 MRF6S21140HSR3 465B	PDF
733W Abstract: No abstract text available Text: MOTOROLA Order this document by MRF5S19060N/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF5S19060NR1 Designed for broadband commercial and industrial applications with	Original	MRF5S19060N/D MRF5S19060NR1 MRF5S19060NBR1 733W	PDF
465B Abstract: A114 AN1955 JESD22 MRF6S21140H MRF6S21140HR3 MRF6S21140HSR3 Text: Freescale Semiconductor Technical Data MRF6S21140H Rev. 2, 1/2005 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for W- CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s . To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L	Original	MRF6S21140H MRF6S21140HR3 MRF6S21140HSR3 465B A114 AN1955 JESD22 MRF6S21140H MRF6S21140HSR3	PDF
100B1R0BW Abstract: A113 A114 A115 AN1955 C101 JESD22 MRF5S19060MBR1 MRF5S19060MR1 Text: Freescale Semiconductor Technical Data Document Number: MRF5S19060M Rev. 5, 5/2006 Replaced by MRF5S19060NR1/NBR1. There are no form, fit or function changes with this part replacement. N suffix added to part number to indicate transition to lead - free terminations.	Original	MRF5S19060M MRF5S19060NR1/NBR1. MRF5S19060MR1 MRF5S19060MBR1 MRF5S19060MR1 100B1R0BW A113 A114 A115 AN1955 C101 JESD22 MRF5S19060MBR1	PDF
733W Abstract: A113 A114 A115 AN1955 C101 JESD22 MRF5S19060N MRF5S19060NBR1 MRF5S19060NR1 Text: Freescale Semiconductor Technical Data Document Number: MRF5S19060N Rev. 6, 5/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF5S19060NR1 MRF5S19060NBR1 Designed for broadband commercial and industrial applications with	Original	MRF5S19060N MRF5S19060NR1 MRF5S19060NBR1 MRF5S19060NR1 733W A113 A114 A115 AN1955 C101 JESD22 MRF5S19060N MRF5S19060NBR1	PDF
Untitled Abstract: No abstract text available Text: Freescale Semiconductor Technical Data Document Number: MRF5S19060M Rev. 5, 5/2006 Replaced by MRF5S19060NR1/NBR1. There are no form, fit or function changes with this part replacement. N suffix added to part number to indicate transition to lead - free terminations.	Original	MRF5S19060M MRF5S19060NR1/NBR1. MRF5S19060MR1 MRF5S19060MBR1 MRF5S19060MR1	PDF
MRF5S19060NB Abstract: 100B0R2B Text: MRF5S19060N Rev. 2, 1/2005 Freescale Semiconductor Technical Data RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF5S19060NR1 MRF5S19060NBR1 MRF5S19060MR1 MRF5S19060MBR1 Designed for broadband commercial and industrial applications with	Original	MRF5S19060N MRF5S19060NR1 MRF5S19060NBR1 MRF5S19060MR1 MRF5S19060MBR1 MRF5S19060NB 100B0R2B	PDF

2060 d Abstract: No abstract text available Text: MOTOROLA Freescale Semiconductor, Inc. Order this document by MRF6S21140H/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors Freescale Semiconductor, Inc. MRF6S21140HR3 N - Channel Enhancement - Mode Lateral MOSFETs MRF6S21140HSR3	Original	MRF6S21140H/D MRF6S21140HR3 MRF6S21140HSR3 MRF6S21140H/D 2060 d	PDF
Untitled Abstract: No abstract text available Text: Freescale Semiconductor Technical Data Rev. 2, 1/2005 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF5S19060NR1 MRF5S19060NBR1 MRF5S19060MR1 MRF5S19060MBR1 Designed for broadband commercial and industrial applications with	Original	22060MR1 MRF5S19060MBR1 MRF5S19060NR1 MRF5S19060NBR1 MRF5S19060MR1	PDF
465B Abstract: A114 AN1955 JESD22 MRF6S21140H MRF6S21140HR3 MRF6S21140HSR3 Text: Freescale Semiconductor Technical Data Document Number: MRF6S21140H Rev. 3, 5/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for W- CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s . To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L	Original	MRF6S21140H MRF6S21140HR3 MRF6S21140HSR3 465B A114 AN1955 JESD22 MRF6S21140H MRF6S21140HSR3	PDF
Untitled Abstract: No abstract text available Text: Freescale Semiconductor Technical Data Document Number: MW6IC1940N Rev. 0, 11/2006 RF LDMOS Wideband Integrated Power Amplifiers The MW6IC1940NB/GNB wideband integrated circuit is designed with on - chip matching that makes it usable from 1920 to 2000 MHz. This	Original	MW6IC1940N MW6IC1940NB/GNB MW6IC1940NBR1 MW6IC1940GNBR1 MW6IC1940N	PDF
mrf6s21140hs Abstract: mrf6s21 100B0R2B MRF6S21140H 1812Y224 Text: Freescale Semiconductor Technical Data MRF6S21140H Rev. 2, 1/2005 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for W- CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s . To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L	Original	MRF6S21140H MRF6S21140HR3 MRF6S21140HSR3 mrf6s21140hs mrf6s21 100B0R2B 1812Y224	PDF

Privacy Settings

100B0R2B Search Results

100B0R2B Price and Stock

Kyocera AVX Components 100B0R2BAN1500XB100

Kyocera AVX Components 100B0R2BTN1500XC100

Kyocera AVX Components 100B0R2BTN1500XT

Kyocera AVX Components 100B0R2BW500XT

Kyocera AVX Components 100B0R2BT500XT1K

100B0R2B Datasheets Context Search

100B0R1BW

100B101JW

Untitled

MRF6S21140HSR3

A113

gsm signal amplifier

IM324

A114

733W

465B

100B1R0BW

733W

Untitled

MRF5S19060NB

2060 d

Untitled

465B

Untitled

mrf6s21140hs