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    100B3R9BW Price and Stock

    Kyocera AVX Components 100B3R9BW500XT1K

    CAP CER 3.9PF 500V P90 1111
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    DigiKey 100B3R9BW500XT1K Digi-Reel 18 1
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    Richardson RFPD 100B3R9BW500XT1K 1,000
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    Kyocera AVX Components 100B3R9BW500XT

    CAP CER 3.9PF 500V P90 1111
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    Mouser Electronics 100B3R9BW500XT 544
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    Kyocera AVX Components 100B3R9BWN500XC100

    MLC A/B/R - Waffle Pack (Alt: 100B3R9BWN500XC100)
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    Avnet Americas 100B3R9BWN500XC100 Waffle Pack 16 Weeks 100
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    Mouser Electronics 100B3R9BWN500XC100
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    Kyocera AVX Components 100B3R9BW500XTV1K

    MLC A/B/R - Custom Tape W/Leader (Alt: 100B3R9BW500XTV1K)
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    Avnet Americas 100B3R9BW500XTV1K Tape w/Leader 16 Weeks 1,000
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    Kyocera AVX Components 100B3R9BW1500XT

    MLC A/B/R - Bulk (Alt: 100B3R9BW1500XT)
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    Avnet Americas 100B3R9BW1500XT Bulk 16 Weeks 500
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    100B3R9BW Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    100B3R9BW500XT American Technical Ceramics Capacitors - Ceramic Capacitors - CAP CER 3.9PF 500V P90 1111 Original PDF
    100B3R9BW500XT1K American Technical Ceramics Ceramic Capacitor 3.9PF 500V P90 1111 Original PDF

    100B3R9BW Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: Document Number: MRF5S9101 Rev. 3, 5/2006 Freescale Semiconductor Technical Data Replaced by MRF5S9101NR1/NBR1. There are no form, fit or function changes with this part replacement. N suffix added to part number to indicate transition to lead - free terminations.


    Original     		MRF5S9101 MRF5S9101NR1/NBR1. MRF5S9101MR1 MRF5S9101MBR1 MRF5S9101MR1 PDF

    Untitled

    Abstract: No abstract text available
    Text: MRF5S9101 Rev. 1, 1/2005 Freescale Semiconductor Technical Data RF Power Field Effect Transistors MRF5S9101NR1 MRF5S9101NBR1 MRF5S9101MR1 MRF5S9101MBR1 N - Channel Enhancement - Mode Lateral MOSFETs Designed for GSM and GSM EDGE base station applications with


    Original     		MRF5S9101 MRF5S9101NR1 MRF5S9101NBR1 MRF5S9101MR1 MRF5S9101MBR1 PDF

    ATC capacitor 100b

    Abstract: MRF9130LR3 MRF9130L MRF9130LSR3 irl130
    Text: MOTOROLA Order this document by MRF9130L/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line MRF9130L MRF9130LR3 MRF9130LSR3 RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for GSM and GSM EDGE base station applications with


    Original     		MRF9130L/D MRF9130L MRF9130LR3 MRF9130LSR3 MRF9130L MRF9130LR3 ATC capacitor 100b MRF9130LSR3 irl130 PDF

    AGR09180EF

    Abstract: JESD22-C101A
    Text: Preliminary Data Sheet March 2004 AGR09180EF 180 W, 865 MHz—895 MHz, N-Channel E-Mode, Lateral MOSFET Introduction The AGR09180EF is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for cellular


    Original     		AGR09180EF Hz--895 AGR09180EF DS04-123RFPP DS04-031RFPP) JESD22-C101A PDF

    marking Z4

    Abstract: A114 A115 AN1955 C101 JESD22 MRF5S9101 MRF5S9101MBR1 MRF5S9101MR1 MRF5S9101NBR1
    Text: Freescale Semiconductor Technical Data Document Number: MRF5S9101 Rev. 2, 7/2005 RF Power Field Effect Transistors MRF5S9101NR1 MRF5S9101NBR1 MRF5S9101MR1 MRF5S9101MBR1 N - Channel Enhancement - Mode Lateral MOSFETs Designed for GSM and GSM EDGE base station applications with


    Original     		MRF5S9101 MRF5S9101NR1 MRF5S9101NBR1 MRF5S9101MR1 MRF5S9101MBR1 MRF5S9101NR1 MRF5S9101NBR1 MRF5S9101MR1 marking Z4 A114 A115 AN1955 C101 JESD22 MRF5S9101 MRF5S9101MBR1 PDF

    J293

    Abstract: 100A470JW RM73B2B100J Transistor Z17 100B100JW AGR18125E AGR18125EF AGR18125EU JESD22-C101A
    Text: Product Brief AGR18125E 125 W, 1.805 GHz—1.880 GHz, LDMOS RF Power Transistor Introduction Table 1. Thermal Characteristics The AGR18125E is a 125 W, 26 V, N-channel goldmetallized, laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor


    Original     		AGR18125E AGR18125E AGR18125EF AGR18125XF M-AGR21125F 12-digit J293 100A470JW RM73B2B100J Transistor Z17 100B100JW AGR18125EF AGR18125EU JESD22-C101A PDF

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data MRF9130L Rev. 3, 12/2004 RF Power Field Effect Transistors N−Channel Enhancement−Mode Lateral MOSFETs MRF9130LR3 MRF9130LSR3 Designed for GSM and GSM EDGE base station applications with frequencies from 921 to 960 MHz, the high gain and broadband performance


    Original     		MRF9130L MRF9130LR3 MRF9130LSR3 PDF

    AGR09180EF

    Abstract: JESD22-C101A transistor z14 L
    Text: AGR09180EF 180 W, 865 MHz—895 MHz, N-Channel E-Mode, Lateral MOSFET Introduction The AGR09180EF is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for cellular band, code-division multiple access (CDMA), global


    Original     		AGR09180EF Hz--895 AGR09180EF suit-20 AGR19K180U JESD22-C101A transistor z14 L PDF

    AGRA10E

    Abstract: AGR045010 AGRA10EU JESD22-C101A 2743019446 tns capacitors
    Text: Preliminary Data Sheet January 2004 AGRA10E 10 W, 100 MHz—1.0 GHz, N-Channel E-Mode, Lateral MOSFET Introduction 865 MHz to 895 MHz The AGRA10E is a broadband general-purpose, highvoltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable


    Original     		AGRA10E AGRA10E IS-95 C32/F, DS03-161RFPP DS03-038RFPP) AGR045010 AGRA10EU JESD22-C101A 2743019446 tns capacitors PDF

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MRF5S9101/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF5S9101NR1 RF Power Field Effect Transistors MRF5S9101NBR1 N - Channel Enhancement - Mode Lateral MOSFETs MRF5S9101MR1 Designed for GSM and GSM EDGE base station applications with


    Original     		MRF5S9101/D MRF5S9101NR1 MRF5S9101NBR1 MRF5S9101MR1 MRF5S9101MBR1 MRF5S9101MBR1 PDF

    MRF9130L

    Abstract: MRF9130LR3 MRF9130LSR3
    Text: MOTOROLA Order this document by MRF9130L/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line MRF9130L MRF9130LR3 MRF9130LSR3 RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for GSM and EDGE base station applications with frequencies


    Original     		MRF9130L/D MRF9130L MRF9130LR3 MRF9130LSR3 MRF9130L MRF9130LR3 MRF9130LSR3 PDF

    C40 Sprague

    Abstract: C201A Z25 transistor UT-141A AGR09180E AGR09180EF AGR09180EU JESD22-C101A
    Text: Preliminary Data Sheet November 2003 AGR09180E 180 W, 865 MHz—895 MHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR09180E is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for cellular


    Original     		AGR09180E Hz--895 AGR09180E DS04-031RFPP DS02-342RFPP) C40 Sprague C201A Z25 transistor UT-141A AGR09180EF AGR09180EU JESD22-C101A PDF

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF9130L Rev. 4, 5/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF9130LR3 MRF9130LSR3 Designed for GSM and GSM EDGE base station applications with frequencies from 921 to 960 MHz, the high gain and broadband performance


    Original     		MRF9130L MRF9130LR3 MRF9130LSR3 MRF9130LR3 PDF

    AGR045010

    Abstract: AGRA10E AGRA10EU JESD22-C101A RF MOSFET CLASS AB
    Text: Preliminary Data Sheet February 2004 AGRA10E 10 W, 100 MHz—1.0 GHz, N-Channel E-Mode, Lateral MOSFET Introduction 865 MHz to 895 MHz The AGRA10E is a broadband general-purpose, high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor


    Original     		AGRA10E AGRA10E IS-95 DS04-096RFPP DS03-161RFPP) AGR045010 AGRA10EU JESD22-C101A RF MOSFET CLASS AB PDF

    capacitor 2220

    Abstract: 200B A113 AN1955 MRF5S9101MBR1 MRF5S9101MR1 MRF5S9101NBR1 MRF5S9101NR1 murata 897 Mhz
    Text: MOTOROLA Freescale Semiconductor, Inc. Order this document by MRF5S9101/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line Freescale Semiconductor, Inc. MRF5S9101NR1 RF Power Field Effect Transistors MRF5S9101NBR1 N - Channel Enhancement - Mode Lateral MOSFETs MRF5S9101MR1


    Original     		MRF5S9101/D MRF5S9101NR1 MRF5S9101NBR1 MRF5S9101MR1 MRF5S9101MBR1 MRF5S9101NR1 MRF5S9101NBR1 MRF5S9101MR1 capacitor 2220 200B A113 AN1955 MRF5S9101MBR1 murata 897 Mhz PDF

    "RF power MOSFETs"

    Abstract: marking Z4 MRF9130LR3 MRF9130L MRF9130LSR3 chip resistor 1206
    Text: Freescale Semiconductor Technical Data Document Number: MRF9130L Rev. 4, 5/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF9130LR3 MRF9130LSR3 Designed for GSM and GSM EDGE base station applications with frequencies from 921 to 960 MHz, the high gain and broadband performance


    Original     		MRF9130L MRF9130LR3 MRF9130LSR3 MRF9130LR3 "RF power MOSFETs" marking Z4 MRF9130L MRF9130LSR3 chip resistor 1206 PDF

    200B103MW

    Abstract: 100B5R6CW
    Text: Freescale Semiconductor Technical Data Rev. 1, 1/2005 RF Power Field Effect Transistors MRF5S9101NR1 MRF5S9101NBR1 MRF5S9101MR1 MRF5S9101MBR1 N - Channel Enhancement - Mode Lateral MOSFETs Designed for GSM and GSM EDGE base station applications with frequencies from 869 to 960 MHz. Suitable for multicarrier amplifier


    Original     		MRF5S9101NR1 MRF5S9101NBR1 MRF5S9101MR1 MRF5S9101MBR1 200B103MW 100B5R6CW PDF

    Untitled

    Abstract: No abstract text available
    Text: Document Number: MRF5S9101N Rev. 4, 5/2006 Freescale Semiconductor Technical Data RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF5S9101NR1 MRF5S9101NBR1 Designed for GSM and GSM EDGE base station applications with frequencies from 869 to 960 MHz. Suitable for multicarrier amplifier


    Original     		MRF5S9101N MRF5S9101NR1 MRF5S9101NBR1 MRF5S9101NR1 PDF

    z24 mosfet

    Abstract: No abstract text available
    Text: AGR09180EF 180 W, 865 MHz—895 MHz, N-Channel E-Mode, Lateral MOSFET Introduction The AGR09180EF is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for cellular band, code-division multiple access (CDMA), global


    Original     		AGR09180EF Hz--895 DS04-123RFPP DS04-031RFPP) z24 mosfet PDF

    TRANSISTOR J477

    Abstract: krc 118 048 J477 mosfet krc 118 056 J493 TRANSISTOR J477 71 302 zl TRANSISTOR J477 48 Fair-Rite ATC J56-1
    Text: Preliminary Data Sheet April 2003 AGR21010E 10 W, 2000 MHz, N-Channel E-Mode, Lateral MOSFET Introduction The AGR21010E is a broadband general-purpose, high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for cellular, personal communications system (PCS), digital communication system (DCS), and


    Original     		AGR21010E AGR21010E AGR21010EU DS03-038RFPP DS02-381RFPP) TRANSISTOR J477 krc 118 048 J477 mosfet krc 118 056 J493 TRANSISTOR J477 71 302 zl TRANSISTOR J477 48 Fair-Rite ATC J56-1 PDF

    JESD22-C101A

    Abstract: AGR09060GF AGR09060GU 06F150
    Text: Preliminary Data Sheet October 2004 AGR09060G 60 W, 865 MHz—895 MHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR09060G is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for cellular


    Original     		AGR09060G Hz--895 AGR09060G DS02-022RFPP JESD22-C101A AGR09060GF AGR09060GU 06F150 PDF

    tns capacitors

    Abstract: capacitor F3 037 02 100B120FW500X
    Text: Preliminary Data Sheet June 2004 AGRA10E 10 W, 100 MHz—1.0 GHz, N-Channel E-Mode, Lateral MOSFET Introduction 865 MHz to 895 MHz The AGRA10E is a broadband general-purpose, high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor


    Original     		AGRA10E IS-95 DS04-196RFPP DS04-096RFPP) tns capacitors capacitor F3 037 02 100B120FW500X PDF

    c5047

    Abstract: No abstract text available
    Text: Preliminary Data Sheet October 2003 AGR09180E 180 W, 865 MHz—895 MHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR09180E is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for cellular


    Original     		AGR09180E Hz--895 DS02-342RFPP c5047 PDF

    25C1740

    Abstract: marking E5 amplifier marking Z4 A113 A114 A115 AN1955 C101 JESD22 MRF5S9101
    Text: Freescale Semiconductor Technical Data Document Number: MRF5S9101 Rev. 3, 5/2006 Replaced by MRF5S9101NR1/NBR1. There are no form, fit or function changes with this part replacement. N suffix added to part number to indicate transition to lead - free terminations.


    Original     		MRF5S9101 MRF5S9101NR1/NBR1. MRF5S9101MR1 MRF5S9101MBR1 MRF5S9101MR1 25C1740 marking E5 amplifier marking Z4 A113 A114 A115 AN1955 C101 JESD22 MRF5S9101 PDF