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Kyocera AVX Components 200B103MW50XT1K CAP CER 10000PF 50V BX 1111
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	200B103MW50XT1K	Digi-Reel	1,170		1	1 $5.36 10 $3.624 100 $2.7004 1000 $2.32502 10000 $2.32502	Buy Now
	200B103MW50XT1K	Cut Tape	1,170		1	1 $5.36 10 $3.624 100 $2.7004 1000 $2.32502 10000 $2.32502	Buy Now
	200B103MW50XT1K	Reel	1,000		1,000	1 - 10 - 100 - 1000 $2.20757 10000 $2.20757	Buy Now
Avnet Americas	200B103MW50XT1K	Tape w/Leader		24 Weeks	1,000	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Mouser Electronics	200B103MW50XT1K					1 - 10 - 100 - 1000 $2 10000 $1.92	Get Quote
Richardson RFPD	200B103MW50XT1K				1,000	1 - 10 - 100 - 1000 $1.95 10000 $1.76	Buy Now
Kyocera AVX Components 200B103MWN50XT MLC A/B/R - Custom Tape W/Leader (Alt: 200B103MWN50XT)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	200B103MWN50XT	Tape w/Leader		24 Weeks	500	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Mouser Electronics	200B103MWN50XT					1 - 10 - 100 - 1000 $2.42 10000 $2.37	Get Quote
Kyocera AVX Components 200B103MW50XT MLC A/B/R - Custom Tape W/Leader (Alt: 200B103MW50XT)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	200B103MW50XT	Tape w/Leader		24 Weeks	500	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Mouser Electronics	200B103MW50XT					1 - 10 - 100 - 1000 $2.43 10000 $2.43	Get Quote
Richardson RFPD	200B103MW50XT				500	1 - 10 - 100 - 1000 $1.95 10000 $1.76	Buy Now
Kyocera AVX Components 200B103MW50XTV MLC A/B/R - Custom Tape W/Leader (Alt: 200B103MW50XTV)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	200B103MW50XTV	Tape w/Leader		24 Weeks	500	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Mouser Electronics	200B103MW50XTV					1 - 10 - 100 - 1000 $2.43 10000 $2.43	Get Quote
Kyocera AVX Components 200B103MW50XC100 MLC A/B/R - Waffle Pack (Alt: 200B103MW50XC100)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	200B103MW50XC100	Waffle Pack		24 Weeks	100	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Mouser Electronics	200B103MW50XC100					1 $4.4 10 $3.79 100 $2.93 1000 $2.51 10000 $2.45	Get Quote
Richardson RFPD	200B103MW50XC100				200	1 - 10 - 100 - 1000 $1.9 10000 $1.72	Buy Now

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200B103MW Datasheets (2)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
200B103MW50XT		American Technical Ceramics	Capacitors - Ceramic Capacitors - CAP CER 10000PF 50V BX 1111		Original	PDF
200B103MW50XT1K		American Technical Ceramics	Ceramic Capacitor 10000PF 50V BX 1111		Original	PDF

200B103MW Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
Untitled Abstract: No abstract text available Text: Document Number: MRF5S9101 Rev. 3, 5/2006 Freescale Semiconductor Technical Data Replaced by MRF5S9101NR1/NBR1. There are no form, fit or function changes with this part replacement. N suffix added to part number to indicate transition to lead - free terminations.	Original	MRF5S9101 MRF5S9101NR1/NBR1. MRF5S9101MR1 MRF5S9101MBR1 MRF5S9101MR1	PDF
167D Abstract: TB167D ph c24 zener diode amidon BN-61-202 ph c20 zener diode ph c13 zener diode ph c24 zener Text: July 13, 2012 TB167D#7 Frequency=30-512MHz Pout=100W Gain=30dB Vds=28Vdc Idq=0.4+0.8A Efficiency=38 to 50% LQ801>LB501A PH: 805 484-4210 FAX:(805)484-3393 1110 Avenida Acaso, Camarillo CA 93012 www.polyfet.com July 13, 2012 40 100 35 80 30 60 25 40 20 20 100	Original	TB167D 30-512MHz 28Vdc LQ801 LB501A 28Vdc, 0R0J12AFX 167D ph c24 zener diode amidon BN-61-202 ph c20 zener diode ph c13 zener diode ph c24 zener	PDF
TB222 Abstract: PH smd transistor PH Text: August 7, 2012 TB222A Frequency=1-1000MHz Pout=25W Gain=11dB Vds=48Vdc Idq=0.15A Efficiency=30 to 70% GX141 PH: 805 484-4210 FAX:(805)484-3393 1110 Avenida Acaso, Camarillo CA 93012 www.polyfet.com B T 2A A ugst7,201 Gain/Eff vs Fre q: Vds =48V, Idq=0.15A, Pout=20W	Original	TB222A 1-1000MHz 48Vdc GX141 2N1893 U5305 MAX881 100nF MIC7300 TB222 PH smd transistor PH	PDF
Untitled Abstract: No abstract text available Text: MRF5S9101 Rev. 1, 1/2005 Freescale Semiconductor Technical Data RF Power Field Effect Transistors MRF5S9101NR1 MRF5S9101NBR1 MRF5S9101MR1 MRF5S9101MBR1 N - Channel Enhancement - Mode Lateral MOSFETs Designed for GSM and GSM EDGE base station applications with	Original	MRF5S9101 MRF5S9101NR1 MRF5S9101NBR1 MRF5S9101MR1 MRF5S9101MBR1	PDF
TB223 Abstract: amidon BN-61-202 Text: June 22, 2012 TB223 Frequency=20-35MHz Pout=30W Gain=17dB Vds=24Vdc Idq=0.4A Efficiency=30 to 58% L2701 PH: 805 484-4210 FAX:(805)484-3393 1110 Avenida Acaso, Camarillo CA 93012 www.polyfet.com June 22, 2012 TB223 Pout/Gain vs Pin: Freq=20 MHz, Vds=24Vdc, Idq=0.4A	Original	TB223 20-35MHz 24Vdc L2701 TB223 24Vdc, 17-turn, 850mu amidon BN-61-202	PDF
Untitled Abstract: No abstract text available Text: Freescale Semiconductor Technical Data Document Number: MRF5P20180HR6 Rev. 1, 5/2006 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET Designed for W- CDMA base station applications with frequencies from 1930 to 1990 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications.	Original	MRF5P20180HR6	PDF
TAJE226M035 Abstract: 200B103MW Text: Freescale Semiconductor Technical Data Rev. 0, 12/2004 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF5P20180HR6 Designed for W- CDMA base station applications with frequencies from 1930 to 1990 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications.	Original	MRF5P20180HR6 TAJE226M035 200B103MW	PDF
Untitled Abstract: No abstract text available Text: PTFA091503EL Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 150 W, 920 – 960 MHz Description The PTFA091503EL is a 150-watt, internally-matched FET intended for use in power ampliier applications in the 920 to 960 MHz band.	Original	PTFA091503EL PTFA091503EL 150-watt, H-33288-6	PDF
PTFB090901EA Abstract: No abstract text available Text: PTFB090901EA PTFB090901FA Thermally-Enhanced High Power RF LDMOS FETs 90 W, 28 V, 920 – 960 MHz Description The PTFB090901EA and PTFB090901FA are 90-watt LDMOS FETs intended for use in multi-standard cellular power amplifier applications in the 920 to 960 MHz frequency band. Features include input and output matching, high gain and thermally-enhanced	Original	PTFB090901EA PTFB090901FA PTFB090901EA PTFB090901FA 90-watt H-37265-2	PDF
PTFB090901 Abstract: TL127 PTFB090901EA 569w PTFB090901FA 100B4R7BW500X PCC104BCTND PCC104bct-nd TRANSISTOR c104 TRANSISTOR c801 Text: PTFB090901EA PTFB090901FA Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 90 W, 28 V, 920 – 960 MHz Description The PTFB090901EA and PTFB090901FA are 90-watt LDMOS FETs intended for use in multi-standard cellular power amplifier	Original	PTFB090901EA PTFB090901FA PTFB090901FA 90-watt H-36265-2 H-37265-2 PTFB090901 TL127 569w 100B4R7BW500X PCC104BCTND PCC104bct-nd TRANSISTOR c104 TRANSISTOR c801	PDF
rogers Abstract: No abstract text available Text: PTF210451 LDMOS RF Power Field Effect Transistor 45 W, 2110–2170 MHz Description Features The PTF210451 is a 45 W internally matched GOLDMOS FET intended for WCDMA applications from 2110 to 2170 MHz. Full gold metallization ensures excellent device lifetime and reliability.	Original	PTF210451 PTF210451 rogers	PDF
marking Z4 Abstract: A114 A115 AN1955 C101 JESD22 MRF5S9101 MRF5S9101MBR1 MRF5S9101MR1 MRF5S9101NBR1 Text: Freescale Semiconductor Technical Data Document Number: MRF5S9101 Rev. 2, 7/2005 RF Power Field Effect Transistors MRF5S9101NR1 MRF5S9101NBR1 MRF5S9101MR1 MRF5S9101MBR1 N - Channel Enhancement - Mode Lateral MOSFETs Designed for GSM and GSM EDGE base station applications with	Original	MRF5S9101 MRF5S9101NR1 MRF5S9101NBR1 MRF5S9101MR1 MRF5S9101MBR1 MRF5S9101NR1 MRF5S9101NBR1 MRF5S9101MR1 marking Z4 A114 A115 AN1955 C101 JESD22 MRF5S9101 MRF5S9101MBR1	PDF
PTFB090901EA Abstract: No abstract text available Text: PTFB090901EA PTFB090901FA Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 90 W, 28 V, 920 – 960 MHz Description The PTFB090901EA and PTFB090901FA are 90-watt LDMOS FETs intended for use in multi-standard cellular power amplifier	Original	PTFB090901EA PTFB090901FA PTFB090901EA PTFB090901FA 90-watt H-37265-2	PDF
TB224 Abstract: D02BZ2 Amidon ferrite Text: October 31, 2012 TB224 Frequency=30-512MHz Pout=1.5W Gain=10dB Vds=28Vdc Idq=0.2A Efficiency=13-18% SP201 PH: 805 484-4210 FAX:(805)484-3393 1110 Avenida Acaso, Camarillo CA 93012 www.polyfet.com October 31, 2012 TB224 Pout/Gain vs Pin: Freq=30MHz, Vds=28Vdc, Idq=0.2A	Original	TB224 30-512MHz 28Vdc SP201 TB224 30MHz, 28Vdc, 250MHz, D02BZ2 Amidon ferrite	PDF

Untitled Abstract: No abstract text available Text: Freescale Semiconductor Technical Data MRF5P20180HR6 Rev. 0, 12/2004 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF5P20180HR6 Designed for W- CDMA base station applications with frequencies from 1930 to 1990 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications.	Original	MRF5P20180HR6 MRF5P20180HR6	PDF
TRANSISTOR tl131 Abstract: No abstract text available Text: PTFB211501E PTFB211501F Thermally-Enhanced High Power RF LDMOS FETs 150 W, 2110 – 2170 MHz Description The PTFB211501E and PTFB211501F are thermally-enhanced, 150-watt, LDMOS FETs designed for cellular power amplifier applications in the 2110 – 2170 frequency band. Features include	Original	PTFB211501E PTFB211501F PTFB211501E PTFB211501F 150-watt, H-36248-2 H-37248-2 TRANSISTOR tl131	PDF
PTF210451E Abstract: PTF210451F 200B1 Text: PTF210451E PTF210451F Thermally-Enhanced High Power RF LDMOS FETs 45 W, 2010 – 2025 MHz and 2110 – 2170 MHz Description The PTF210451E and PTF210451F are 45-watt internally-matched GOLDMOS FETs intended for TD-SCDMA applications from 2010 to 2025 MHz, and WCDMA applications from 2110 to 2170 MHz.	Original	PTF210451E PTF210451F PTF210451E PTF210451F 45-watt 200B1	PDF
200B Abstract: AN1955 MRF5P20180HR6 Text: Freescale Semiconductor Technical Data MRF5P20180HR6 Rev. 0, 12/2004 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF5P20180HR6 Designed for W- CDMA base station applications with frequencies from 1930 to 1990 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications.	Original	MRF5P20180HR6 200B AN1955 MRF5P20180HR6	PDF
Untitled Abstract: No abstract text available Text: PTF210451E PTF210451F Thermally-Enhanced High Power RF LDMOS FETs 45 W, 2110 – 2170 MHz Description The PTF210451E and PTF210451F are 45-watt internally-matched GOLDMOS FETs intended for WCDMA applications from 2110 to 2170 MHz. Thermally-enhanced packaging provides the coolest	Original	PTF210451E PTF210451F 45-watt PTF210451F*	PDF
Untitled Abstract: No abstract text available Text: MOTOROLA Order this document by MRF5S9101/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF5S9101NR1 RF Power Field Effect Transistors MRF5S9101NBR1 N - Channel Enhancement - Mode Lateral MOSFETs MRF5S9101MR1 Designed for GSM and GSM EDGE base station applications with	Original	MRF5S9101/D MRF5S9101NR1 MRF5S9101NBR1 MRF5S9101MR1 MRF5S9101MBR1 MRF5S9101MBR1	PDF
Untitled Abstract: No abstract text available Text: MOTOROLA Freescale Semiconductor, Inc. Order this document by MRF5P20180/D SEMICONDUCTOR TECHNICAL DATA Replaced by MRF5P20180HR6. H suffix indicates lower thermal resistance package. The RF MOSFET Line MRF5P20180R6 RF Power Field Effect Transistor 1990 MHz, 38 W AVG.,	Original	MRF5P20180/D MRF5P20180HR6. MRF5P20180R6 Channel2003	PDF
Untitled Abstract: No abstract text available Text: Document Number: MRF5S9080N Rev. 0, 3/2006 Freescale Semiconductor Technical Data RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF5S9080NR1 MRF5S9080NBR1 Designed for GSM and GSM EDGE base station applications with frequencies from 869 to 960 MHz. Suitable for TDMA, CDMA, and multicarrier	Original	MRF5S9080N MRF5S9080NR1 MRF5S9080NBR1 MRF5S9080N	PDF
capacitor 2220 Abstract: 200B A113 AN1955 MRF5S9101MBR1 MRF5S9101MR1 MRF5S9101NBR1 MRF5S9101NR1 murata 897 Mhz Text: MOTOROLA Freescale Semiconductor, Inc. Order this document by MRF5S9101/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line Freescale Semiconductor, Inc. MRF5S9101NR1 RF Power Field Effect Transistors MRF5S9101NBR1 N - Channel Enhancement - Mode Lateral MOSFETs MRF5S9101MR1	Original	MRF5S9101/D MRF5S9101NR1 MRF5S9101NBR1 MRF5S9101MR1 MRF5S9101MBR1 MRF5S9101NR1 MRF5S9101NBR1 MRF5S9101MR1 capacitor 2220 200B A113 AN1955 MRF5S9101MBR1 murata 897 Mhz	PDF
200B103MW Abstract: 100B5R6CW Text: Freescale Semiconductor Technical Data Rev. 1, 1/2005 RF Power Field Effect Transistors MRF5S9101NR1 MRF5S9101NBR1 MRF5S9101MR1 MRF5S9101MBR1 N - Channel Enhancement - Mode Lateral MOSFETs Designed for GSM and GSM EDGE base station applications with frequencies from 869 to 960 MHz. Suitable for multicarrier amplifier	Original	MRF5S9101NR1 MRF5S9101NBR1 MRF5S9101MR1 MRF5S9101MBR1 200B103MW 100B5R6CW	PDF

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200B103MW Price and Stock

Kyocera AVX Components 200B103MW50XT1K

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Kyocera AVX Components 200B103MW50XTV

Kyocera AVX Components 200B103MW50XC100

200B103MW Datasheets (2)

200B103MW Datasheets Context Search

Untitled

167D

TB222

Untitled

TB223

Untitled

TAJE226M035

Untitled

PTFB090901EA

PTFB090901

rogers

marking Z4

PTFB090901EA

TB224

Untitled

TRANSISTOR tl131

PTF210451E

200B

Untitled

Untitled

Untitled

Untitled

capacitor 2220

200B103MW