Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    100B7R5JP Search Results

    SF Impression Pixel

    100B7R5JP Price and Stock

    Kyocera AVX Components 100B7R5JP500XC100

    MLC A/B/R - Waffle Pack (Alt: 100B7R5JP500XC100)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas 100B7R5JP500XC100 Waffle Pack 16 Weeks 100
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    		Get Quote
    Mouser Electronics 100B7R5JP500XC100
    • 1 $5.91
    • 10 $5.09
    • 100 $3.8
    • 1000 $3.07
    • 10000 $3.01
    		Get Quote
    Richardson RFPD 100B7R5JP500XC100 200
    • 1 -
    • 10 -
    • 100 -
    • 1000 $2.64
    • 10000 $2.35
    		Buy Now

    Kyocera AVX Components 100B7R5JP500XT

    MLC A/B/R - Custom Tape W/Leader (Alt: 100B7R5JP500XT)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas 100B7R5JP500XT Tape w/Leader 16 Weeks 500
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    		Get Quote
    Mouser Electronics 100B7R5JP500XT
    • 1 -
    • 10 -
    • 100 -
    • 1000 $3.07
    • 10000 $3.07
    		Get Quote

    Kyocera AVX Components 100B7R5JP500XTV

    MLC A/B/R - Custom Tape W/Leader (Alt: 100B7R5JP500XTV)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas 100B7R5JP500XTV Tape w/Leader 16 Weeks 500
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    		Get Quote
    Mouser Electronics 100B7R5JP500XTV
    • 1 -
    • 10 -
    • 100 -
    • 1000 $3.72
    • 10000 $3.72
    		Get Quote

    Kyocera AVX Components 100B7R5JP500XT1K

    MLC A/B/R - Custom Tape W/Leader (Alt: 100B7R5JP500XT1K)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas 100B7R5JP500XT1K Tape w/Leader 16 Weeks 1,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    		Get Quote
    Mouser Electronics 100B7R5JP500XT1K
    • 1 -
    • 10 -
    • 100 -
    • 1000 $2.51
    • 10000 $2.51
    		Get Quote

    Kyocera AVX Components 100B7R5JPN500XC100

    Silicon RF Capacitors / Thin Film MLC A/B/R
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics 100B7R5JPN500XC100
    • 1 $6.16
    • 10 $5.3
    • 100 $3.96
    • 1000 $3.2
    • 10000 $3.14
    		Get Quote
    Find more 100B7R5JP price and stock on Findchips.com

    100B7R5JP Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data MRF6S9130H Rev. 0, 1/2005 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF6S9130HR3 MRF6S9130HSR3 Designed for N - CDMA, GSM and GSM EDGE base station applications with frequencies from 865 to 960 MHz. Suitable for multicarrier amplifier


    Original     		MRF6S9130H MRF6S9130HR3 MRF6S9130HSR3 MRF6S9130HR3 PDF

    MRF9030MBR1

    Abstract: MRF9030MR1 100B7R5JP
    Text: MOTOROLA Order this document by MRF9030M/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line RF Power Field Effect Transistors MRF9030MR1 MRF9030MBR1 N–Channel Enhancement–Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 1.0 GHz. The high gain and broadband performance of these devices


    Original     		MRF9030M/D MRF9030MR1 MRF9030MBR1 MRF9030MR1 MRF9030MBR1 100B7R5JP PDF

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Replaced by MRF9030NR1/NBR1. There are no form, fit or function changes with this part MRF9030M Rev. 9, 5/2006 replacement. N suffix added to part number to indicate transition to lead - free terminations. RF Power Field Effect Transistors


    Original     		MRF9030NR1/NBR1. MRF9030M MRF9030MR1 MRF9030MBR1 MRF9030MR1 PDF

    Untitled

    Abstract: No abstract text available
    Text: Document Number: MRF6S9045 Rev. 2, 5/2006 Freescale Semiconductor Technical Data Replaced by MRF6S9045NR1/NBR1. There are no form, fit or function changes with this part replacement. N suffix added to part number to indicate transition to lead - free terminations.


    Original     		MRF6S9045 MRF6S9045NR1/NBR1. MRF6S9045MR1 MRF6S9045MBR1 MRF6S9045MR1 PDF

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF5S21100H Rev. 3, 5/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF5S21100HR3 MRF5S21100HSR3 Designed for W- CDMA base station applications with frequencies from 2110


    Original     		MRF5S21100H MRF5S21100HR3 MRF5S21100HSR3 MRF5S21100HR3 PDF

    rf push pull mosfet power amplifier

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF9120 Rev. 9, 3/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFET MRF9120LR3 Designed for broadband commercial and industrial applications with frequencies from 865 to 895 MHz. The high gain and broadband performance of


    Original     		MRF9120 MRF9120LR3 MRF9120 rf push pull mosfet power amplifier PDF

    mrf5s21090

    Abstract: No abstract text available
    Text: MRF5S21090H Rev. 1, 12/2004 Freescale Semiconductor Technical Data RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF5S21090HR3 MRF5S21090HSR3 Designed for W- CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s . To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L


    Original     		MRF5S21090H MRF5S21090HR3 MRF5S21090HSR3 mrf5s21090 PDF

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF6S9130H Rev. 2, 6/2005 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF6S9130HR3 MRF6S9130HSR3 Designed for N - CDMA, GSM and GSM EDGE base station applications


    Original     		MRF6S9130H MRF6S9130HR3 MRF6S9130HSR3 MRF6S9130H PDF

    A113

    Abstract: A114 A115 AN1955 C101 JESD22 MRF5S9070NR1 MRF5S9070NR
    Text: Freescale Semiconductor Technical Data Document Number: MRF5S9070NR1 Rev. 6, 5/2006 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF5S9070NR1 Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of


    Original     		MRF5S9070NR1 A113 A114 A115 AN1955 C101 JESD22 MRF5S9070NR1 MRF5S9070NR PDF

    FERRITE BEAD 1000 OHM 0805

    Abstract: MW6S010NR1 A113 A114 A115 AN1955 C101 JESD22 MW6S010GNR1 CRCW12061001F100
    Text: Freescale Semiconductor Technical Data Document Number: MW6S010N Rev. 3, 5/2006 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFETs Designed for Class A or Class AB base station applications with frequencies up to 1500 MHz. Suitable for analog and digital modulation and multicarrier


    Original     		MW6S010N MW6S010NR1 MW6S010GNR1 FERRITE BEAD 1000 OHM 0805 A113 A114 A115 AN1955 C101 JESD22 MW6S010GNR1 CRCW12061001F100 PDF

    rf push pull mosfet power amplifier

    Abstract: MRF9120 MRF9120LR3 marking WB4
    Text: Freescale Semiconductor Technical Data Document Number: MRF9120 Rev. 10, 5/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFET MRF9120LR3 Designed for broadband commercial and industrial applications with frequencies from 865 to 895 MHz. The high gain and broadband performance of


    Original     		MRF9120 MRF9120LR3 rf push pull mosfet power amplifier MRF9120 MRF9120LR3 marking WB4 PDF

    93F2975

    Abstract: marking 865 amplifier 100B120JP 865 marking amplifier
    Text: Freescale Semiconductor Technical Data Rev. 6, 12/2004 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies from 865 to 895 MHz. The high gain and broadband performance


    Original     		MRF9135LR3 MRF9135LSR3 93F2975 marking 865 amplifier 100B120JP 865 marking amplifier PDF

    MRF6S9045MR1

    Abstract: A113 A114 A115 AN1955 C101 JESD22 MRF6S9045 MRF6S9045MBR1
    Text: Freescale Semiconductor Technical Data Document Number: MRF6S9045 Rev. 2, 5/2006 Replaced by MRF6S9045NR1/NBR1. There are no form, fit or function changes with this part replacement. N suffix added to part number to indicate transition to lead - free terminations.


    Original     		MRF6S9045 MRF6S9045NR1/NBR1. MRF6S9045MR1 MRF6S9045MBR1 A113 A114 A115 AN1955 C101 JESD22 MRF6S9045 MRF6S9045MBR1 PDF

    100B2R7CP500X

    Abstract: AN1955 MRF5S21100HR3 MRF5S21100HSR3 MRF5S21100L MRF5S21100LR3 MRF5S21100LSR3
    Text: MOTOROLA Freescale Semiconductor, Inc. Order this document by MRF5S21100L/D SEMICONDUCTOR TECHNICAL DATA MRF5S21100LR3 and MRF5S21100LSR3 replaced by MRF5S21100HR3 and MRF5S21100HSR3. “H” suffix indicates lower thermal resistance package. The RF MOSFET Line


    Original     		MRF5S21100L/D MRF5S21100LR3 MRF5S21100LSR3 MRF5S21100HR3 MRF5S21100HSR3. MRF5S21100LR3 MRF5S21100LSR3 100B2R7CP500X AN1955 MRF5S21100HSR3 MRF5S21100L PDF

    MRF9120

    Abstract: MRF9120LR3
    Text: Document Number: MRF9120 Rev. 10, 5/2006 Freescale Semiconductor Technical Data RF Power Field Effect Transistors MRF9120LR3 Designed for broadband commercial and industrial applications with frequencies from 865 to 895 MHz. The high gain and broadband performance of


    Original     		MRF9120 MRF9120LR3 IS-95 MRF9120 MRF9120LR3 PDF

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MRF5S21100H/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors MRF5S21100HR3 N-Channel Enhancement-Mode Lateral MOSFETs MRF5S21100HSR3 Designed for W-CDMA base station applications with frequencies from 2110


    Original     		MRF5S21100H/D MRF5S21100HR3 MRF5S21100HR3 MRF5S21100HSR3 PDF

    MRF9030MBR1

    Abstract: MRF9030MR1
    Text: MOTOROLA Order this document by MRF9030M/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line RF Power Field Effect Transistors MRF9030MR1 MRF9030MBR1 N–Channel Enhancement–Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 1.0 GHz. The high gain and broadband performance of these devices


    Original     		MRF9030M/D MRF9030MR1 MRF9030MBR1 MRF9030MR1 DEVICEMRF9030M/D MRF9030MBR1 PDF

    MRF9120

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies from 865 to 895 MHz. The high gain and broadband performance of these


    Original     		MRF9120 MRF9120S PDF

    44F3360

    Abstract: 93F2975
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line RF Power Field Effect Transistors MRF9030MR1 MRF9030MBR1 N–Channel Enhancement–Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 1.0 GHz. The high gain and broadband performance of these devices


    Original     		MRF9030MBR1) MRF9030MR1 MRF9030MBR1 44F3360 93F2975 PDF

    MRF9135LSR3

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data MRF9135L Rev. 6, 12/2004 RF Power Field Effect Transistors N−Channel Enhancement−Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies from 865 to 895 MHz. The high gain and broadband performance


    Original     		MRF9135L MRF9135LR3 MRF9135LSR3 MRF9135LSR3 PDF

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA Freescale Semiconductor, Inc. Order this document by MRF5S21090L/D SEMICONDUCTOR TECHNICAL DATA MRF5S21090LR3 and MRF5S21090LSR3 replaced by MRF5S21090HR3 and MRF5S21090HSR3. “H” suffix indicates lower thermal resistance package. MRF5S21090LR3 MRF5S21090LSR3


    Original     		MRF5S21090L/D MRF5S21090LR3 MRF5S21090LSR3 MRF5S21090HR3 MRF5S21090HSR3. MRF5S21090LR3 MRF5S21090LSR3 84tion PDF

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF5S9070NR1 Rev. 4, 1/2005 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF5S9070NR1 MRF5S9070MR1 Designed for broadband commercial and industrial applications with


    Original     		MRF5S9070NR1 MRF5S9070MR1 MRF5S9070NR1 PDF

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF9135L Rev. 7, 8/2005 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies from 865 to 895 MHz. The high gain and broadband performance


    Original     		MRF9135L MRF9135LR3 MRF9135LSR3 MRF9135L PDF

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF6S9130H Rev. 3, 8/2005 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF6S9130HR3 MRF6S9130HSR3 Designed for N - CDMA, GSM and GSM EDGE base station applications


    Original     		MRF6S9130H MRF6S9130HR3 MRF6S9130HSR3 MRF6S9130H PDF