2SC4390
Abstract: ITR06668 ITR06669 VEBO-15V
Text: 2SC4390 Ordering number : EN2958B SANYO Semiconductors DATA SHEET 2SC4390 NPN Epitaxial Planar Silicon Transistor High hFE, AF Amplifier Applications Features • • • • • Adoption of MBIT process. High DC current gain hFE=800 to 3200 . Large current capacity (IC=2A).
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2SC4390
EN2958B
VEBO15V)
2SC4390
ITR06668
ITR06669
VEBO-15V
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Untitled
Abstract: No abstract text available
Text: NTE2505 Silicon NPN Transistor Low Frequency, General Purpose Amp Features: D High Current Capacity D High DC Current Gain D Low Collector Emitter Saturation Voltage D High Emitter Base Breakdown Voltage Absolute Maximum Ratings: TA = +25°C unless otherwise specified
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NTE2505
100IB1
100IB2
700mA,
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2SC4204
Abstract: ITR06479 ITR06480 ITR06481
Text: Ordering number:ENN2531A NPN Epitaxial Planar Silicon Transistor 2SC4204 High-hFE, AF Amplifier Applications Applications Package Dimensions • AF amplifier, various drivers. unit:mm 2003B Features [2SC4204] 5.0 4.0 4.0 5.0 · Adoption of MBIT process. · High DC current gain hFE=800 to 3200 .
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ENN2531A
2SC4204
2003B
2SC4204]
VEBO15V)
2SC4204
ITR06479
ITR06480
ITR06481
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VEBO-15V
Abstract: 2SC4736 ITR07504 ITR07505
Text: 2SC4736 Ordering number : EN3975A SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor 2SC4736 High hFE, Low-Frequency General-Purpose Amplifier Applications Features • • • • • • • • Large current IC=2A . Adoption of MBIT process.
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2SC4736
EN3975A
VEBO15V)
VEBO-15V
2SC4736
ITR07504
ITR07505
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2SC5069
Abstract: ITR07888 ITR07889 ITR07890
Text: Ordering number:ENN4509 NPN Epitaxial Planar Silicon Transistor 2SC5069 Low-Frequency General-Purpose Amplifier, Driver Applications Features Package Dimensions unit:mm 2038A [2SC5069] 4.5 1.6 1.5 0.4 1.0 2.5 4.25max • High current capacity. · Adoption of MBIT process.
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ENN4509
2SC5069
2SC5069]
25max
2SC5069
ITR07888
ITR07889
ITR07890
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2SC5060
Abstract: 2SC5060 equivalent
Text: 2SC5060 Transistors Power transistor 90±10V, 3A 2SC5060 zExternal dimensions (Unit : mm) zFeatures 1) Built-in zener diode between collector and base. 2) Zener diode has low voltage dispersion. 3) Strong protection against reverse power surges due to “L”
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2SC5060
65Max.
2SC5060
2SC5060 equivalent
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Untitled
Abstract: No abstract text available
Text: Ordering number:ENN3975 NPN Epitaxial Planar Silicon Transistor 2SC4736 High hFE, Low-Frequency General-Purpose Amplifier Applications Package Dimensions unit:mm 2084B [2SC4736] 4.5 1.9 10.5 2.6 1.4 8.5 1.2 1.0 • Large current IC=2A . · Adoption of MBIT process.
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ENN3975
2SC4736
VEBO15V)
2084B
2SC4736]
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22505TN
Abstract: 1A marking 2SC5069 ITR07888
Text: 2SC5069 Ordering number : EN4509A SANYO Semiconductors DATA SHEET 2SC5069 NPN Epitaxial Planar Silicon Transistor Low-Frequency General-Purpose Amplifier, Driver Applications Features • • • • • High current capacity. Adoption of MBIT process. High DC current gain.
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2SC5069
EN4509A
22505TN
1A marking
2SC5069
ITR07888
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2SC4480
Abstract: ITR07096 ITR07097 ITR07098 ITR07099
Text: Ordering number:ENN3234 NPN Epitaxial Planar Silicon Transistor 2SC4480 Low-Frequency General-Purpose Amplifier, General Driver Applications Features Package Dimensions • Large current capacity. · Adoption of MBIT process. · High DC current gain. · Low collector-to-emitter saturation voltage.
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ENN3234
2SC4480
2SC4480]
2SC4480
ITR07096
ITR07097
ITR07098
ITR07099
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2SC4390
Abstract: ITR06668 ITR06669 ITR06670 ITR06671
Text: Ordering number:ENN2958A NPN Epitaxial Planar Silicon Transistor 2SC4390 High-hFE, AF Amplifier Applications Features Package Dimensions unit:mm 2038A [2SC4390] 4.5 1.6 1.5 0.4 1.0 2.5 4.25max • Adoption of MBIT process. · High DC current gain hFE=800 to 3200 .
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ENN2958A
2SC4390
2SC4390]
25max
VEBO15V)
2SC4390
ITR06668
ITR06669
ITR06670
ITR06671
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2SC5060
Abstract: 9010V
Text: Power transistor 9010V, 3A 2SC5060 Dimensions (Unit : mm) Features 1) Built-in zener diode between collector and base. 2) Zener diode has low voltage dispersion. 3) Strong protection against reverse power surges due to “L” loads. 4) Darlington connection for high DC current gain.
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2SC5060
65Max.
R0039A
2SC5060
9010V
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2SC4390
Abstract: No abstract text available
Text: Ordering num ber:EN 2958 _ 2 S C 4 3 9 0 No.2958 NPN Epitaxial Planar Silicon Transistor H ig h - h p E , AF Amp Applications F e a tu re s . Adoption of MBIT process • H igh DC current gain hpE = 800 to 3200 • Large current capacity (Ic = 2A)
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2SC4390
--15V)
250mm2
2SC4390
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2SC5069
Abstract: VEBO-15V 2038a
Text: Ordering n u m b e r:E N 4 5 0 9 No.4509 _ 2SC5069 NPN Epitaxial Planar Silicon Transistor Low-Frequency General-Purpose Amp, Driver Applications I F e a tu re s •High C urrent Capacity. • Adoption of MBIT process. • High DC current gain.
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EN4509
2SC5069
250mm2
2SC5069
VEBO-15V
2038a
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