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    2SC5047

    Abstract: ITR07878 ITR07879 ITR07880 ITR07881
    Text: Ordering number:ENN4785A NPN Triple Diffused Planar Silicon Transistor 2SC5047 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features Package Dimensions • High speed tf=100ns typ . · High reliability (Adoption of HVP process).


    Original     		PDF ENN4785A 2SC5047 100ns 2048B 2SC5047] 2SC5047 ITR07878 ITR07879 ITR07880 ITR07881

    Untitled

    Abstract: No abstract text available
    Text: Ordering number:ENN5045 NPN Epitaxial Planar Silicon Transistor 2SC5229 VHF to UHF Wide-Band Low-Noise Amplifier Applications Features Package Dimensions • Low noise : NF=1.0dB typ f=1GHz . · High gain : S21e2=10.5dB typ (f=1GHz). · High cutoff frequency : fT=6.5GHz typ.


    Original     		PDF ENN5045 2SC5229 S21e2 2SC5229] 25max

    Untitled

    Abstract: No abstract text available
    Text: Ordering number:ENN4785A NPN Triple Diffused Planar Silicon Transistor 2SC5047 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features Package Dimensions • High speed tf=100ns typ . · High reliability (Adoption of HVP process).


    Original     		PDF ENN4785A 2SC5047 100ns 2048B 2SC5047]

    2SC5227

    Abstract: ITR07966 ITR08202 ITR08203 ITR08204
    Text: Ordering number:ENN5034 NPN Epitaxial Planar Silicon Transistor 2SC5227 VHF to UHF Wide-Band Low-Noise Amplifier Applications Features Package Dimensions • Low noise : NF=1.0dB typ f=1GHz . · High gain : ⏐S21e⏐2=12dB typ (f=1GHz). · High cutoff frequency : fT=7GHz typ.


    Original     		PDF ENN5034 2SC5227 S21e2 2018B 2SC5227] 2SC5227 ITR07966 ITR08202 ITR08203 ITR08204

    2SC5229

    Abstract: ITR07941 ITR07942 ITR07943 ITR07944 ITR07945 MARKING CY of 8404
    Text: Ordering number:ENN5045 NPN Epitaxial Planar Silicon Transistor 2SC5229 VHF to UHF Wide-Band Low-Noise Amplifier Applications Features Package Dimensions • Low noise : NF=1.0dB typ f=1GHz . · High gain : ⏐S21e⏐2=10.5dB typ (f=1GHz). · High cutoff frequency : fT=6.5GHz typ.


    Original     		PDF ENN5045 2SC5229 S21e2 2SC5229] 25max 2SC5229 ITR07941 ITR07942 ITR07943 ITR07944 ITR07945 MARKING CY of 8404

    Untitled

    Abstract: No abstract text available
    Text: Ordering number:ENN5032A NPN Epitaxial Planar Silicon Transistor 2SC5226 VHF to UHF Wide-Band Low-Noise Amplifier Applications Features Package Dimensions • Low noise : NF=1.0dB typ f=1GHz . · High gain : S21e2=12dB typ (f=1GHz). · High cutoff frequency : fT=7GHz typ.


    Original     		PDF ENN5032A 2SC5226 2059B 2SC5226]

    Untitled

    Abstract: No abstract text available
    Text: Ordering number:ENN4783 NPN Triple Diffused Planar Silicon Transistor 2SC5045 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features Package Dimensions • High speed tf=100ns typ . · High reliability (Adoption of HVP process).


    Original     		PDF ENN4783 2SC5045 100ns 2039D 2SC5045]

    2SC5069

    Abstract: ITR07888 ITR07889 ITR07890
    Text: Ordering number:ENN4509 NPN Epitaxial Planar Silicon Transistor 2SC5069 Low-Frequency General-Purpose Amplifier, Driver Applications Features Package Dimensions unit:mm 2038A [2SC5069] 4.5 1.6 1.5 0.4 1.0 2.5 4.25max • High current capacity. · Adoption of MBIT process.


    Original     		PDF ENN4509 2SC5069 2SC5069] 25max 2SC5069 ITR07888 ITR07889 ITR07890

    2SC5230

    Abstract: ITR07952 ITR07953 ITR07954 ITR07955
    Text: Ordering number:ENN5046 NPN Epitaxial Planar Silicon Transistor 2SC5230 VHF to UHF Wide-Band Low-Noise Amplifier Applications Features Package Dimensions • Low noise : NF=1.0dB typ f=1GHz . · High gain : ⏐S21e⏐2=10.5dB typ (f=1GHz). · High cutoff frequency : fT=6.5GHz typ.


    Original     		PDF ENN5046 2SC5230 S21e2 2004B 2SC5230] 2SC5230 ITR07952 ITR07953 ITR07954 ITR07955

    2SC5046

    Abstract: ITR07868 ITR07869 ITR07870 ITR07871
    Text: Ordering number:ENN4784 NPN Triple Diffused Planar Silicon Transistor 2SC5046 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features Package Dimensions • High speed tf=100ns typ . · High reliability (Adoption of HVP process).


    Original     		PDF ENN4784 2SC5046 100ns 2048B 2SC5046] 2SC5046 ITR07868 ITR07869 ITR07870 ITR07871

    Untitled

    Abstract: No abstract text available
    Text: Ordering number:ENN4784 NPN Triple Diffused Planar Silicon Transistor 2SC5046 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features Package Dimensions • High speed tf=100ns typ . · High reliability (Adoption of HVP process).


    Original     		PDF ENN4784 2SC5046 100ns 2048B 2SC5046]

    KT 839

    Abstract: No abstract text available
    Text: Ordering number:ENN5034 NPN Epitaxial Planar Silicon Transistor 2SC5227 VHF to UHF Wide-Band Low-Noise Amplifier Applications Features Package Dimensions • Low noise : NF=1.0dB typ f=1GHz . · High gain : S21e2=12dB typ (f=1GHz). · High cutoff frequency : fT=7GHz typ.


    Original     		PDF ENN5034 2SC5227 S21e2 2018B 2SC5227] KT 839

    22505TN

    Abstract: 1A marking 2SC5069 ITR07888
    Text: 2SC5069 Ordering number : EN4509A SANYO Semiconductors DATA SHEET 2SC5069 NPN Epitaxial Planar Silicon Transistor Low-Frequency General-Purpose Amplifier, Driver Applications Features • • • • • High current capacity. Adoption of MBIT process. High DC current gain.


    Original     		PDF 2SC5069 EN4509A 22505TN 1A marking 2SC5069 ITR07888

    2SC5226

    Abstract: ITR07919 ITR07920 ITR07921 ITR07922 ITR07923
    Text: Ordering number:ENN5032A NPN Epitaxial Planar Silicon Transistor 2SC5226 VHF to UHF Wide-Band Low-Noise Amplifier Applications Features Package Dimensions • Low noise : NF=1.0dB typ f=1GHz . · High gain : ⏐S21e⏐2=12dB typ (f=1GHz). · High cutoff frequency : fT=7GHz typ.


    Original     		PDF ENN5032A 2SC5226 S21e2 2059B 2SC5226] 2SC5226 ITR07919 ITR07920 ITR07921 ITR07922 ITR07923

    Untitled

    Abstract: No abstract text available
    Text: Ordering number:ENN5046 NPN Epitaxial Planar Silicon Transistor 2SC5230 VHF to UHF Wide-Band Low-Noise Amplifier Applications Features Package Dimensions • Low noise : NF=1.0dB typ f=1GHz . · High gain : S21e2=10.5dB typ (f=1GHz). · High cutoff frequency : fT=6.5GHz typ.


    Original     		PDF ENN5046 2SC5230 S21e2 2004B 2SC5230]

    2SC5228

    Abstract: ITR07930 ITR07931 ITR07932 ITR07933 ITR07934 KT 0803 29 0826 transistor kt 808
    Text: Ordering number:ENN5035 NPN Epitaxial Planar Silicon Transistor 2SC5228 VHF to UHF Wide-Band Low-Noise Amplifier Applications Features Package Dimensions • Low noise : NF=1.0dB typ f=1GHz . · High gain : ⏐S21e⏐2=13.5dB typ (f=1GHz). · High cutoff frequency : fT=7GHz typ.


    Original     		PDF ENN5035 2SC5228 S21e2 2SC5228] 2SC5228 ITR07930 ITR07931 ITR07932 ITR07933 ITR07934 KT 0803 29 0826 transistor kt 808

    2SC5045

    Abstract: ITR07858 ITR07859 ITR07860 ITR07861
    Text: Ordering number:ENN4783 NPN Triple Diffused Planar Silicon Transistor 2SC5045 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features Package Dimensions • High speed tf=100ns typ . · High reliability (Adoption of HVP process).


    Original     		PDF ENN4783 2SC5045 100ns 2039D 2SC5045] 2SC5045 ITR07858 ITR07859 ITR07860 ITR07861