100N05 Search Results

RFA100N05E

Abstract: GC200 100N05E ff048
Contextual Info: ffl h a r r is J a n u a ry 1 9 9 3 RFA 100N05E N-Channel Enhancem ent-M ode Power Field-Effect Transistor MegaFET Package Features • 100A, 50V • rDS(on) = 0 -0 0 8 fi D R A IN • Electrostatic Discharge Rated • UIS SOA Rating Curve (Single Pulse)

Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a

100N055

Abstract: NP100N055NUH
Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a

100N055

Abstract: 20n60c 200N055 60n10 45n80 160N075 100n05 75N60 02N5 01N100D
Contextual Info: Power MOSFETs N-Channel Depletion-Mode Type Package style DSS max. Tc = 25-C A Vos = 0V n pF 500 0.20 1000 0.10 30 110 1 20 1 20 ► New ► IXTP 02N50D ► IXTP 01N100D pF Outline drawings on page 91-100 w Fig. 3 TO-220AB Weight = 4 g 25 25 G = G a te. D = Drain

100N055

Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a

100N055

Abstract: NP100N055MDH NP100N055PDH 100n05 NP100N055NDH NP100N055PDH-E1-AY MP-25ZP NP100N055PDH-E1 NP100N055NDH-S18-AY D1880
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 100N055MDH, 100N055NDH, 100N055PDH SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 100N055MDH, 100N055NDH, 100N055PDH are N-channel MOS Field Effect Transistors designed for high current switching applications.

Contextual Info: • 4305571 00544A5 T3b ■ H a r r i s January 1993 HAS R F A 1 N 5 E N-Channel Enhancement-Mode Power Field-Effect Transistor MegaFET Package Features • 1 0 0 A, 50 V • rD S(on) = 0 .0 0 8 f l D R A IN • E lectro static D ischarge Rated • UiS S O A Rating C urve (Single Pulse)

100N055

Abstract: NP100N055PUH NP100N055MUH marking code Yb Transistor TRANSISTOR MARKING YB NP100N055NUH NP100N055NUH-S18 MP-25ZP NP100N055PUHE1AY
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 100N055MUH, 100N055NUH, 100N055PUH SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 100N055MUH, 100N055NUH, 100N055PUH are N-channel MOS Field Effect Transistors designed for high current switching applications.