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    100P6C Search Results

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    100P6C Price and Stock

    TE Connectivity AST4200J00100P6C0000

    AST4200J00100P6C0000:CTO-1300000
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    DigiKey AST4200J00100P6C0000 Bulk 10
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    Master Electronics AST4200J00100P6C0000
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    Glenair Inc MWDM2L-100P-6C3-.250B

    MICRO-D CONNECTORS - Bulk (Alt: MWDM2L-100P-6C3-.2)
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    Newark MWDM2L-100P-6C3-.250B Bulk 1
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    Interstate Connecting Components MWDM2L-100P-6C3-.250B
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    JRH Electronics MWDM2L-100P-6C3-.250B
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    Glenair Inc MWDM2L-100P-6C4-.125B

    MICRO-D CONNECTORS - Bulk (Alt: MWDM2L-100P-6C4-.1)
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    Mouser Electronics MWDM2L-100P-6C4-.125B
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    JRH Electronics MWDM2L-100P-6C4-.125B
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    Glenair Inc MWDM2L-100P-6C4-.125M

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    Mouser Electronics MWDM2L-100P-6C4-.125M
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    Newark MWDM2L-100P-6C4-.125M Bulk 1
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    JRH Electronics MWDM2L-100P-6C4-.125M
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    Glenair Inc MWDM2L-100P-6C4-1.000B

    MICRO-D CONNECTORS - Bulk (Alt: MWDM2L-100P-6C4-1.)
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    Mouser Electronics MWDM2L-100P-6C4-1.000B
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    Newark MWDM2L-100P-6C4-1.000B Bulk 1
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    Interstate Connecting Components MWDM2L-100P-6C4-1.000B
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    JRH Electronics MWDM2L-100P-6C4-1.000B
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    100P6C Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: P4C164L LOW POWER 8K x 8 STATIC CMOS RAM FEATURES Common Data I/O Three-State Outputs Fully TTL Compatible Inputs and Outputs Advanced CMOS Technology Automatic Power Down Packages —28-Pin 300 and 600 mil DIP —28-Pin 450 mil SOP VCC Current Commercial/Industrial


    Original     		PDF P4C164L --28-Pin a164L P4C164L

    Untitled

    Abstract: No abstract text available
    Text: P4C164 ULTRA HIGH SPEED 8K x 8 STATIC CMOS RAMS FEATURES Data Retention with 2.0V Supply, 10 A Typical Current P4C164L Military Full CMOS, 6T Cell High Speed (Equal Access and Cycle Times) – 8/10/12/15/20/25/35/70/100 ns (Commercial) – 10/12/15/20/25/35/70/100 ns(Industrial)


    Original     		PDF P4C164 P4C164L 28-Pin 100ns) 536-bit

    Untitled

    Abstract: No abstract text available
    Text: P4C164 REVISIONS DOCUMENT NUMBER: DOCUMENT TITLE: SRAM115 P4C164 ULTRA HIGH SPEED 8K x 8 STATIC CMOS RAMS REV. ISSUE DATE ORIG. OF CHANGE OR 1997 DAB New Data Sheet A Oct-05 JDB Change logo to Pyramid B Jun-06 JDB Added 28-pin ceramic DIP C Aug-06 JDB Added Lead Free Designation


    Original     		PDF P4C164 Oct-05 Jun-06 Aug-06 SRAM115 P4C164 28-pin SRAM115

    Untitled

    Abstract: No abstract text available
    Text: P4C164 ULTRA HIGH SPEED 8K x 8 STATIC CMOS RAMS FEATURES Data Retention with 2.0V Supply, 10 A Typical Current P4C164L Military Full CMOS, 6T Cell High Speed (Equal Access and Cycle Times) – 8/10/12/15/20/25/35/70/100 ns (Commercial) – 10/12/15/20/25/35/70/100 ns(Industrial)


    Original     		PDF P4C164 P4C164L 28-Pin 100ns) P4C164 536-bit

    100DM

    Abstract: 1519B P4C164 P4C164L
    Text: P4C164 ULTRA HIGH SPEED 8K x 8 STATIC CMOS RAMS FEATURES Full CMOS, 6T Cell Common Data I/O High Speed Equal Access and Cycle Times – 8/10/12/15/20/25/35/70/100 ns (Commercial) – 10/12/15/20/25/35/70/100 ns(Industrial) – 12/15/20/25/35/45/70/100 ns (Military)


    Original     		PDF P4C164 28-Pin 100ns) 32-Pin 100DM 1519B P4C164 P4C164L

    Untitled

    Abstract: No abstract text available
    Text: P4C164 ULTRA HIGH SPEED 8K x 8 STATIC CMOS RAMS FEATURES Full CMOS, 6T Cell Common Data I/O High Speed Equal Access and Cycle Times – 8/10/12/15/20/25/35/70/100 ns (Commercial) – 10/12/15/20/25/35/70/100 ns(Industrial) – 12/15/20/25/35/45/70/100 ns (Military)


    Original     		PDF P4C164 P4C164L 28-Pin 100ns)

    Untitled

    Abstract: No abstract text available
    Text: P4C164/P4C164L ULTRA HIGH SPEED 8K x 8 STATIC CMOS RAMS FEATURES Full CMOS, 6T Cell Single 5V±10% Power Supply High Speed Equal Access and Cycle Times – 8/10/12/15/20/25/35/70/100 ns (Commercial) – 10/12/15/20/25/35/70/100 ns(Industrial) – 12/15/20/25/35/45 ns (Military)


    Original     		PDF P4C164/P4C164L 770mW P4C164L P4C164L 28-Pin 100ns) P4C164/164L

    1519B

    Abstract: P4C164 P4C164L
    Text: P4C164/P4C164L ULTRA HIGH SPEED 8K x 8 STATIC CMOS RAMS FEATURES Full CMOS, 6T Cell Single 5V±10% Power Supply High Speed Equal Access and Cycle Times – 8/10/12/15/20/25/35/70/100 ns (Commercial) – 10/12/15/20/25/35/70/100 ns(Industrial) – 12/15/20/25/35/45 ns (Military)


    Original     		PDF P4C164/P4C164L P4C164L 770mW P4C164L 28-Pin 100ns) P4C164/164L 1519B P4C164

    P4C164L

    Abstract: No abstract text available
    Text: P4C164L LOW POWER 8K x 8 STATIC CMOS RAM FEATURES Common Data I/O Three-State Outputs Fully TTL Compatible Inputs and Outputs Advanced CMOS Technology Automatic Power Down Packages —28-Pin 300 and 600 mil DIP —28-Pin 330 mil SOP VCC Current Commercial/Industrial


    Original     		PDF P4C164L --28-Pin SRAM116 SRAM116 P4C164L Oct-05

    Memory

    Abstract: FT6264(L)
    Text: FT6264 L ULTRA HIGH SPEED 8K x 8 STATIC CMOS RAMS FEATURES Full CMOS, 6T Cell Common Data I/O High Speed (Equal Access and Cycle Times) – 8/10/12/15/20/25/35/70/100 ns (Commercial) – 10/12/15/20/25/35/70/100 ns(Industrial) – 12/15/20/25/35/45/70/100 ns (Military)


    Original     		PDF FT6264 28-Pin 100ns) 32-Pin Memory FT6264(L)

    Untitled

    Abstract: No abstract text available
    Text: P4C164 ULTRA HIGH SPEED 8K x 8 STATIC CMOS RAMS FEATURES Full CMOS, 6T Cell Common Data I/O High Speed Equal Access and Cycle Times – 8/10/12/15/20/25/35/70/100 ns (Commercial) – 10/12/15/20/25/35/70/100 ns(Industrial) – 12/15/20/25/35/45/70/100 ns (Military)


    Original     		PDF P4C164 P4C164L 28-Pin 100ns)

    Untitled

    Abstract: No abstract text available
    Text: P4C164L LOW POWER 8K x 8 STATIC CMOS RAM FEATURES Common Data I/O Three-State Outputs Fully TTL Compatible Inputs and Outputs Advanced CMOS Technology Automatic Power Down Packages —28-Pin 300 and 600 mil DIP —28-Pin 450 mil SOP VCC Current Commercial/Industrial


    Original     		PDF P4C164L --28-Pin SRAM116 P4C164L Oct-05 SRAM116

    Untitled

    Abstract: No abstract text available
    Text: P4C164 ULTRA HIGH SPEED 8K x 8 STATIC CMOS RAMS FEATURES Full CMOS, 6T Cell Common Data I/O High Speed Equal Access and Cycle Times – 8/10/12/15/20/25/35/70/100 ns (Commercial) – 10/12/15/20/25/35/70/100 ns(Industrial) – 12/15/20/25/35/45/70/100 ns (Military)


    Original     		PDF P4C164 P4C164L 28-Pin 100ns)

    FT6264

    Abstract: 25l32
    Text: FT6264 L ULTRA HIGH SPEED 8K x 8 STATIC CMOS RAMS FEATURES Full CMOS, 6T Cell Common Data I/O High Speed (Equal Access and Cycle Times) – 8/10/12/15/20/25/35/70/100 ns (Commercial) – 10/12/15/20/25/35/70/100 ns(Industrial) – 12/15/20/25/35/45/70/100 ns (Military)


    Original     		PDF FT6264 FT6264L 28-Pin 100ns) 25l32

    Memory

    Abstract: FT6164
    Text: FT6164 ULTRA HIGH SPEED 8K x 8 STATIC CMOS RAMS FEATURES Full CMOS, 6T Cell Common Data I/O High Speed Equal Access and Cycle Times – 8/10/12/15/20/25/35/70/100 ns (Commercial) – 10/12/15/20/25/35/70/100 ns(Industrial) – 12/15/20/25/35/45/70/100 ns (Military)


    Original     		PDF FT6164 28-Pin 100ns) 32-Pin Memory FT6164

    Untitled

    Abstract: No abstract text available
    Text: P4C164 ULTRA HIGH SPEED 8K x 8 STATIC CMOS RAMS FEATURES Data Retention with 2.0V Supply, 10 µA Typical Current P4C164L Military Full CMOS, 6T Cell High Speed (Equal Access and Cycle Times) – 8/10/12/15/20/25/35/70/100 ns (Commercial) – 10/12/15/20/25/35/70/100 ns(Industrial)


    Original     		PDF P4C164 P4C164L 28-Pin 100ns) 32-Pin

    THT355

    Abstract: 107 KH Tantalum Capacitor
    Text: Type THT Wet Tantalum Capacitors • M GENERAL SPECIFICATIONS C a p a c ito rs Tantalum Case Technology Hermetically Sealed Rugged Construction 200°C Operating Temperature Voltage Range: 6 to 125 VDC @ 85°C 2.4 to 75 VDC @ 200°C Wet Tantalum Up to 3 Volts Reverse


    OCR Scan     		PDF THT365 I25P6A THT905 I25P6B THTI46 I25P6B THT256* 125P6C THT566" I25P6F THT355 107 KH Tantalum Capacitor

    Untitled

    Abstract: No abstract text available
    Text: Type THT • MallorY Wet Tantalum Capacitors GENERAL SPECIFICATIONS Tantalum Case T echnology Herm etically Sealed Rugged Construction Stable in Hostile Environm ents 200°C O perating Tem perature T he m axim um ripple current carrying capa­ bility at 40 kHz and 85°C is shown in the


    OCR Scan     		PDF THT175â 125P6A THT365* THT905 125P6B THT146-125P6B THT186 125P6C THT256

    Untitled

    Abstract: No abstract text available
    Text: Type THX • MallorY Wet Tantalum Capacitors GENERAL SPECIFICATIONS E x te n d e d R ang e T a n ta lu m C a s e T e c h n o lo g y H e rm e tic a lly S e a le d R u g g e d C o n s tru c tio n S ta b le in H o s tile E n v iro n m e n ts U p to 3 V o lts R e v e rs e


    OCR Scan     		PDF THX276â 060P6A THX107 060P6B THX227â 060P6C THX277 060P6F THX106 100P6A

    mallory wet tantalum

    Abstract: No abstract text available
    Text: I Type THT MallorY Wet Tantalum Capacitors GENERAL SPECIFICATIONS C apacitors Tantalum Case Technology Hermetically Sealed Rugged Construction 200°C Operating Temperature Operating Temperature: -55°C to +200°C with properderating Up to 3 Volts Reverse Capability @ 85°C


    OCR Scan     		PDF THT175 125P6A THT365 THT905 125P6B THT146 THT186-125P6C THT256M25P6C mallory wet tantalum

    Untitled

    Abstract: No abstract text available
    Text: Type TLW • MallorY Wet Tantalum Capacitors GENERAL SPECIFICATIONS TYPICAL APPLICATIONS Operating T emperature: -55°Cto+175°C with proper derating Filtering, bypass circuits Coupling and timing circuits Low source impedance circuits High charging current circuits


    OCR Scan     		PDF 375x1 TLW175 125P6A TLW365* TLW905 125P6B TLW146 TLW186â

    015P6B

    Abstract: No abstract text available
    Text: I Type TLW Wet Tantalum Capacitors M allor Y GENERAL SPECIFICATIONS 175°C Operation Silver C ase Technology M lL -C -3 9006 /09 Designs Operating Temperature: -55°C to +175°C Hermetically Sealed Rugged Construction Voltage Range: 6 to 125 V D C Capacitance Range:


    OCR Scan     		PDF Insulated66 I25P6F 1284/Indianapolis 46206-1284/P 273-0090/Fax: 015P6B

    X827

    Abstract: 125P6A THX227 X-826 030p
    Text: I Type THX Wet Tantalum Capacitors M allo r Y C a p a c ito rs Extended Range Tantalum C ase Technology Hermetically S ealed T h e maximum ripple current carrying capability at 4 0 kHz and 85°C is shown in the Standard Rating Table. Maxim um ripple capability at other


    OCR Scan     		PDF 100P6A 100P6B 100P6C 100P6F THX276 060P6A 060P6B THX227 060P6C THX277 X827 125P6A X-826 030p

    Untitled

    Abstract: No abstract text available
    Text: I Type THX M allorY Wet Tantalum Capacitors GENERAL SPECIFICATIONS C apacitors Extended Range Tantalum C ase Technology Herm etically Sealed Rugged Construction Stable in H ostile Environm ents Wet Tantalum Up to 3 Volts Reverse Capability The m axim um ripple current carrying


    OCR Scan     		PDF THX226 075P6A THX686 075P6B THX826 THX187 075P6C THX227 Q75P6F