Untitled
Abstract: No abstract text available
Text: SEMICONDUCTOR B20A100VIC TECHNICAL DATA SCHOTTKY BARRIER TYPE DIODE STACK SWITCHING TYPE POWER SUPPLY APPLICATION. CONVERTER & CHOPPER APPLICATION. A P S Average Output Rectified Current B E G : IO=20A Tc=110 . Repetitive Peak Reverse Voltage : VRRM=100V.
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B20A100VIC
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MBRF20100CT
Abstract: 100v 20a schottky power diode
Text: SEMICONDUCTOR MBRF20100CT TECHNICAL DATA SCHOTTKY BARRIER TYPE DIODE SWITCHING TYPE POWER SUPPLY APPLICATION. CONVERTER & CHOPPER APPLICATION. C F A O FEATURES Average Output Rectified Current B E G : IO=20A. Repetitive Peak Reverse Voltage : VRRM=100V. K
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MBRF20100CT
MBRF20100CT
100v 20a schottky power diode
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TC124A
Abstract: No abstract text available
Text: SEMICONDUCTOR MBR20100CT TECHNICAL DATA SCHOTTKY BARRIER TYPE DIODE SWITCHING MODE POWER SUPPLY APPLICATION. CONVERTER & CHOPPER APPLICATION. A O FEATURES C ・Average Output Rectified Current F E : IO=20A. G B ・Repetitive Peak Reverse Voltage Q : VRRM=100V.
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MBR20100CT
TC124A
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MBRF20U100CT
Abstract: AV2015 AV-2015 MBRF20U
Text: SEMICONDUCTOR MBRF20U100CT TECHNICAL DATA SCHOTTKY BARRIER TYPE DIODE SWITCHING TYPE POWER SUPPLY APPLICATION. CONVERTER & CHOPPER APPLICATION. C F A O FEATURES Average Output Rectified Current DIM B E G : IO=20A. Repetitive Peak Reverse Voltage : VRRM=100V.
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MBRF20U100CT
MBRF20U100CT
AV2015
AV-2015
MBRF20U
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MBRF20U100CT
Abstract: 100v 20a schottky power diode
Text: SEMICONDUCTOR MBRF20U100CT TECHNICAL DATA SCHOTTKY BARRIER TYPE DIODE SWITCHING TYPE POWER SUPPLY APPLICATION. CONVERTER & CHOPPER APPLICATION. C F A O FEATURES Average Output Rectified Current DIM B E G : IO=20A. Repetitive Peak Reverse Voltage : VRRM=100V.
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MBRF20U100CT
MBRF20U100CT
100v 20a schottky power diode
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B20A
Abstract: No abstract text available
Text: SEMICONDUCTOR B20A100VIC TECHNICAL DATA SCHOTTKY BARRIER TYPE DIODE STACK SWITCHING TYPE POWER SUPPLY APPLICATION. CONVERTER & CHOPPER APPLICATION. A P S Average Output Rectified Current B E G : IO=20A Tc=90 . Repetitive Peak Reverse Voltage : VRRM=100V.
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B20A100VIC
B20A
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MBR20100
Abstract: MBR20100CT
Text: SEMICONDUCTOR MBR20100CT TECHNICAL DATA SCHOTTKY BARRIER TYPE DIODE SWITCHING TYPE POWER SUPPLY APPLICATION. CONVERTER & CHOPPER APPLICATION. A O FEATURES C F Average Output Rectified Current E : IO=20A. G B Repetitive Peak Reverse Voltage Q : VRRM=100V. I
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MBR20100CT
MBR20100
MBR20100CT
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Untitled
Abstract: No abstract text available
Text: SEMICONDUCTOR B20A100VIC TECHNICAL DATA SCHOTTKY BARRIER TYPE DIODE STACK SWITCHING MODE POWER SUPPLY APPLICATION. CONVERTER & CHOPPER APPLICATION. A P S ・Average Output Rectified Current B E G : IO=20A Tc=90℃ . ・Repetitive Peak Reverse Voltage : VRRM=100V.
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B20A100VIC
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MBRF20100CT
Abstract: JA60 AV-2015
Text: SEMICONDUCTOR MBRF20100CT TECHNICAL DATA SCHOTTKY BARRIER TYPE DIODE SWITCHING TYPE POWER SUPPLY APPLICATION. CONVERTER & CHOPPER APPLICATION. A P S Average Output Rectified Current B E G : IO=20A. Repetitive Peak Reverse Voltage : VRRM=100V. K Fast Reverse Recovery Time : trr=35ns.
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MBRF20100CT
MBRF20100CT
JA60
AV-2015
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NTE6086
Abstract: diode schottky 1000V 10a
Text: NTE6086 Silicon Dual Schottky Rectifier Description: The NTE6086 is a silicon dual power rectifier in a TO220 type package designed using the Schottky Barrier principle with a platinum barrier metal. Features: D 20 Amps Total 10 Amps Pre Diode Leg D Guarding for Stress Protection
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NTE6086
NTE6086
diode schottky 1000V 10a
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diode schottky 1000V 10a
Abstract: "Dual Schottky Rectifier" NTE6086 10 AMP 1000V RECTIFIER DIODE
Text: NTE6086 Silicon Dual Schottky Rectifier 100V, 10 Amp, TO220 Description: The NTE6086 is a silicon dual power rectifier in a TO220 type package designed using the Schottky Barrier principle with a platinum barrier metal. Features: D 20 Amps Total 10 Amps Pre Diode Leg
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NTE6086
NTE6086
diode schottky 1000V 10a
"Dual Schottky Rectifier"
10 AMP 1000V RECTIFIER DIODE
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NTE6086
Abstract: NTE6088 diode schottky 1000V 10a
Text: NTE6088 Silicon Dual Schottky Rectifier Description: The NTE6086 is a silicon dual power rectifier in a TO220 type package designed using the Schottky Barrier principle with a platinum barrier metal. Features: D 20 Amps Total 10 Amps Pre Diode Leg D Guarding for Stress Protection
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NTE6088
NTE6086
NTE6088
diode schottky 1000V 10a
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NTE6086
Abstract: diode schottky 1000V 10a
Text: NTE6086 Silicon Dual Schottky Rectifier Description: The NTE6086 is a silicon dual power rectifier in a TO220 type package designed using the Schottky Barrier principle with a platinum barrier metal. Features: D 20 Amps Total 10 Amps Pre Diode Leg D Guarding for Stress Protection
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NTE6086
NTE6086
diode schottky 1000V 10a
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YG865C10
Abstract: YG865C10R max1440 2VR6
Text: YG865C10R 100V / 20A [200509] Outline drawings, mm Low IR Schottky barrier diode Features Low IR Low VF Center tap connection Applications High frequency operation DC-DC converters AC adapter Package : TO-220F Epoxy resin UL : V-0 Connection diagram 1 2
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YG865C10R
O-220F
YG865C10
YG865C10R
max1440
2VR6
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20H100C
Abstract: No abstract text available
Text: 20A SCHOTTKY RECTIFIER Description Features Dual center tap Schottky rectifier designed for high frequency Switched Mode Power Supplies. ̈ High junction temperature capability ̈ Good trade off between leakage current and forward voltage drop ̈ Low leakage current
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220FPAB
220AB
10max)
GMR20H100C
O220AB
O220FPAB
20H100C
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20H100C
Abstract: 100V 20A Schottky Common Anode Diode V103 100v 20a schottky power diode
Text: GMR20H100C 20A SCHOTTKY RECTIFIER Description Features Dual center tap Schottky rectifier designed for high frequency Switched Mode Power Supplies. High junction temperature capability Good trade off between leakage current and forward voltage drop
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GMR20H100C
20H100C
220FPAB
220AB
10max)
GMR20H100C
O220AB
O220FPAB
100V 20A Schottky Common Anode Diode
V103
100v 20a schottky power diode
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YA865C10
Abstract: YA865C10R
Text: YA865C10R 100V / 20A [200509] Outline drawings, mm 10+0.5 4.5±0.2 2.7±0.1 Ø3.6±0.2 1.2 Applications 14 -0.5 Low IR Low VF Center tap connection 3.7±0.2 15±0.2 Features 6.4±0.2 Low IR Schottky barrier diode 0.4 0.8 2.7 2.54 High frequency operation
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YA865C10R
O-220AB
YA865C10
YA865C10R
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100v 20a schottky power diode
Abstract: No abstract text available
Text: TS865C10R 100V/20A [200509] 0.9 ±0.3 Outline drawings, mm 1.5 Max Features Low IR Low VF Center tap connection 4.5 ±0.2 1.32 3.0 ±0.3 10 +0.5 9.3 ±0.5 Low IR Schottky barrier diode +0.2 1.2 ±0.2 0.8 —0.1 0.4 +0.2 2.7 5.08 Applications 1. Gate 2, 4. Drain
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TS865C10R
00V/20A)
100v 20a schottky power diode
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2a 200v schottky diode
Abstract: IXYS-VUM25-E IXYSVUM25-E Schottky diode TO220 DGS10-018A DGS10-025A DGS20-018A DGS20-025A DGSK20-018A ST Low Forward Voltage Schottky Diode
Text: EPE Conference, Lausanne, 1999 1 Electrical Behaviour of a New Gallium Arsenide Power Schottky Diode A. Lindemann IXYS Semiconductor GmbH Postfach 1180 68619 Lampertheim, Germany Fax: .49/6206/503-579 E-Mail: A.Lindemann@IXYS.de St. Knigge Ferdinand Braun Institute
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20H100CTG
Abstract: 20H-1
Text: new pr od September 21, 2002 No. NPI-01 o f n i t c u Vishay Semiconductors Business Unit: Power Diodes Division New Product Announcement: MBR F (B)20H100CTG Schottky Rectifier Series Product Group: Further Information: Tel: Fax: e-mail: Rectifiers R.S. Chin
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NPI-01
20H100CTG
MBR20H100CTG,
MBR20H90CTG
O-220AB)
MBRF20H100CTG,
MBRF20H90CTG
ITO-220AB)
MBRB20H100CTG,
MBRB20H90CTG
20H100CTG
20H-1
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100N1
Abstract: No abstract text available
Text: HIGH EFFICIENCY SCHOTTKY RECTIFIER DIODE SB30-100N1 • Hermetic Ceramic Surface Mount Package TO-267AA • Low Forward Voltage Drop • Typical applications include Switching Power Supplies, Converters, Free Wheeling Diodes and Reverse Battery Protection
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SB30-100N1
O-267AA)
SB30-100N1-JQRS
100N1
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Untitled
Abstract: No abstract text available
Text: HIGH EFFICIENCY SCHOTTKY RECTIFIER DIODE SB30-100N1 • Hermetic Ceramic Surface Mount Package TO-267AA • Low Forward Voltage Drop • Typical applications include Switching Power Supplies, Converters, Free Wheeling Diodes and Reverse Battery Protection
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SB30-100N1
O-267AA)
SB30-100N1-JQRS
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IXAN0041
Abstract: 2a 200v schottky diode Schottky diode TO220 IXYSVUM25-E power Diode 20A schottky diode ST DGS10-018A DGS10-025A ST Low Forward Voltage Schottky Diode DGS20-025A
Text: EPE Conference, Lausanne, 1999 IXAN0041 1 Electrical Behaviour of a New Gallium Arsenide Power Schottky Diode A. Lindemann IXYS Semiconductor GmbH Postfach 1180 68619 Lampertheim, Germany Fax: .49/6206/503-579 E-Mail: A.Lindemann@IXYS.de St. Knigge Ferdinand Braun Institute
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IXAN0041
IXAN0041
2a 200v schottky diode
Schottky diode TO220
IXYSVUM25-E
power Diode 20A
schottky diode ST
DGS10-018A
DGS10-025A
ST Low Forward Voltage Schottky Diode
DGS20-025A
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Schottky diode 50A 100v
Abstract: diode schottky 200A DO-5 Package power diode 200A 100v schottky power diode
Text: OLTRONICS INC SO l>E|t,7?fl5IÌM □ODGD4S 4 Oltronics, Inc. D Power Schottky Diodes 148 Sidney St. • Cambridge, M A 02139 • Tel. 617 354-6534 Semiconductor O.E.M. THE MC SERIES DIODE MC Series Diodes are Schottky rectifiers of superior performance due to their stability at high
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77fiScÃ
2C100:
2C200:
Schottky diode 50A 100v
diode schottky 200A
DO-5 Package
power diode 200A
100v schottky power diode
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