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    100N1 Search Results

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    100N1 Price and Stock

    STMicroelectronics STD100N10F7

    MOSFET N CH 100V 80A DPAK
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    DigiKey STD100N10F7 Reel 10,000 2,500
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    Avnet Americas STD100N10F7 Reel 7,500 26 Weeks 2,500
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    Newark STD100N10F7 Cut Tape 25 1
    • 1 $0.935
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    STMicroelectronics STD100N10F7 11,128 1
    • 1 $1.98
    • 10 $1.67
    • 100 $1.35
    • 1000 $1.16
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    Ameya Holding Limited STD100N10F7 30,000
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    Avnet Silica STD100N10F7 17 Weeks 2,500
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    EBV Elektronik STD100N10F7 27 Weeks 2,500
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    Win Source Electronics STD100N10F7 10,000
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    Diotec Semiconductor AG DI100N10PQ-AQ

    MOSFET PWRQFN 5X6 100V 0.0045OHM
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey DI100N10PQ-AQ Reel 5,000 5,000
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    Diotec Semiconductor AG DI100N10PQ

    MOSFET PWRQFN 5X6 100V 0.0045OHM
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    DigiKey DI100N10PQ Cut Tape 4,792 1
    • 1 $2.53
    • 10 $1.63
    • 100 $1.1156
    • 1000 $0.82387
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    Rochester Electronics LLC FDP100N10

    POWER FIELD-EFFECT TRANSISTOR, 7
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    DigiKey FDP100N10 Bulk 2,970 159
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    Infineon Technologies AG IPB100N10S305ATMA1

    MOSFET N-CH 100V 100A TO263-3
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IPB100N10S305ATMA1 Reel 1,000 1,000
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    EBV Elektronik IPB100N10S305ATMA1 13 Weeks 1,000
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    Find more 100N1 price and stock on Findchips.com

    100N1 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    S3 DIODE schottky

    Abstract: 100N1
    Text: Advanced Technical Information HiPerFETTM Power MOSFETs IXFN 100N10S1 IXFN 100N10S2 with Schottky Diodes IXFN 100N10S3 Parallel, Buck & Boost Configurations for SMPS, PFC & Motor Control Circuits S1 S2 4 D VDSS ID25 RDS(on) = 100 V = 100 A = 15 mW S3 4(D)


    Original     		PDF 100N10S1 100N10S2 100N10S3 OT-227 E153432 S3 DIODE schottky 100N1

    Untitled

    Abstract: No abstract text available
    Text: HiPerFETTM Power MOSFETs IXFN 100N10S1 IXFN 100N10S2 with Schottky Diodes IXFN 100N10S3 m~ê~ääÉäI=_ìÅâ=C=_ççëí=`çåÑáÖìê~íáçåë Ñçê=pjmpI=mc`=C=jçíçê=`çåíêçä=`áêÅìáíë S1 VDSS ID25 RDS on S2 QEaF = 100 V = 100 A Ω


    Original     		PDF 100N10S1 100N10S2 100N10S3

    Untitled

    Abstract: No abstract text available
    Text: HIGH EFFICIENCY SCHOTTKY RECTIFIER DIODE SB30-100N1 • Hermetic Ceramic Surface Mount Package TO-267AA • Low Forward Voltage Drop • Typical applications include Switching Power Supplies, Converters, Free Wheeling Diodes and Reverse Battery Protection


    Original     		PDF SB30-100N1 O-267AA) SB30-100N1-JQRS

    S3 DIODE schottky

    Abstract: 100N10S1
    Text: Advanced Technical Information HiPerFETTM Power MOSFETs IXFN 100N10S1 IXFN 100N10S2 with Schottky Diodes IXFN 100N10S3 Parallel, Buck & Boost Configurations for SMPS, PFC & Motor Control Circuits S1 S2 4 D VDSS ID25 RDS(on) = 100 V = 100 A = 15 mW S3 4(D)


    Original     		PDF 100N10S1 100N10S2 100N10S3 OT-227 E153432 S3 DIODE schottky

    100N10S2

    Abstract: 100N10S1 pehf
    Text: HiPerFETTM Power MOSFETs IXFN 100N10S1 IXFN 100N10S2 with Schottky Diodes IXFN 100N10S3 m~ê~ääÉäI=_ìÅâ=C=_ççëí=`çåÑáÖìê~íáçåë Ñçê=pjmpI=mc`=C=jçíçê=`çåíêçä=`áêÅìáíë S1 VDSS ID25 RDS on S2 QEaF = 100 V = 100 A Ω


    Original     		PDF 100N10S1 100N10S2 100N10S3 100N10S2 100N10S1 pehf

    100N120

    Abstract: 25N120 100N-120 150N120 75N120 15N120 IC IGBT 25N120 100N170 IC IGBT 15N120 mj 1352
    Text: Chip-Shortform2004.pmd IC TVJM 1200 IXED 15N120 IXED 25N120 IXED 50N120 IXED 75N120 IXED 100N120 IXED 150N120 1700 IXED 75N170 IXED 100N170 °C 150 Eoff Eon inductive load TVJ = 125°C Qg on Internal Gate Sithickn. A A mm • • • • • • 20 25 50


    Original     		PDF 15N120 25N120 50N120 75N120 100N120 150N120 75N170 100N170 100N-120 IC IGBT 25N120 100N170 IC IGBT 15N120 mj 1352

    100N1

    Abstract: No abstract text available
    Text: HIGH EFFICIENCY SCHOTTKY RECTIFIER DIODE SB30-100N1 • Hermetic Ceramic Surface Mount Package TO-267AA • Low Forward Voltage Drop • Typical applications include Switching Power Supplies, Converters, Free Wheeling Diodes and Reverse Battery Protection


    Original     		PDF SB30-100N1 O-267AA) SB30-100N1-JQRS 100N1

    E 150N10

    Abstract: 150N10 100N10 IXFK100N10 IXFN150N10
    Text: HiPerFETTM Power MOSFETs VDSS 100N10 IXFN150N10 ID25 RDS on 100 V 100 A 100 V 150 A trr £ 200 ns N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr 12 mW 12 mW TO-264 AA (IXFK) Symbol Test Conditions Maximum Ratings IXFK IXFN VDSS TJ = 25°C to 150°C


    Original     		PDF IXFK100N10 IXFN150N10 O-264 ID120 E 150N10 150N10 100N10 IXFK100N10 IXFN150N10

    diode AR S1 99

    Abstract: S3 DIODE schottky 486 smps
    Text: Advanced Technical Information Parallel, Buck & Boost Configurations for SMPS, PFC & Motor Control Circuits S1 HiPerFET MOSFET Diode Test Conditions VDSS TJ = 25°C to 150°C 100 V VDGR TJ = 25°C to 150°C; RGS = 1 MW 100 V VGS Continuous ±20 V Transient


    Original     		PDF 100N10S1 100N10S2 100N10S3 diode AR S1 99 S3 DIODE schottky 486 smps

    Untitled

    Abstract: No abstract text available
    Text: 100N10F7 N-channel 100 V, 0.0062 Ω typ., 19 A, STripFET VII DeepGATE™ Power MOSFET in a PowerFLAT™ 5x6 package Datasheet - production data Features 1 Type VDSS 100N10F7 100 V RDS on max PTOT ID 0.0073 Ω 19 A 5W 2 3 • Ultra low on-resistance


    Original     		PDF STL100N10F7 DocID023656

    100N10F7

    Abstract: No abstract text available
    Text: 100N10F7, 100N10F7, 100N10F7 N-channel 100 V, 0.0068 Ω typ., 80 A, STripFET VII DeepGATE™ Power MOSFET in DPAK, TO-220FP and TO-220 packages Datasheet — preliminary data Features TAB Type VDSS RDS on max 100 V 0.008 Ω 100N10F7 100N10F7


    Original     		PDF STD100N10F7, STF100N10F7, STP100N10F7 O-220FP O-220 STD100N10F7 STF100N10F7 O-220FP O-220 100N10F7

    CON AT62B

    Abstract: ISA-A19 ISP1581 XC95144 philips choke ferrite isp1581 scanner 8051 philips details scanner schematics circuit for 8051 interface with memory Xilinx usb cable Schematic
    Text: UM10020-01 ISP1581 Scanner Eval Kit User’s Guide September 2002 File name of the previous revision was UM10003-02.pdf User’s Guide Rev 1.2 Revision History: Version Date 1.2 Sep, 2002 1.1 July 2002 1.0 April, 2002 Descriptions Divided the ISP1581 Evaluation Kit User’s Guide UM10003-02.pdf


    Original     		PDF UM10020-01 ISP1581 UM10003-02 UM10019-01 UM10020-01 CON AT62B ISA-A19 XC95144 philips choke ferrite isp1581 scanner 8051 philips details scanner schematics circuit for 8051 interface with memory Xilinx usb cable Schematic

    STV6618

    Abstract: TQFP44
    Text: STV6618 Video Switch Matrix for DVDs Main Features • I²C Bus Control ■ 5 Y/CVBS Inputs, 3 Y/CVBS Outputs ■ 3 C Inputs, 1 C Output ■ 2 RGB/YPrPb Inputs, 1 RGB/YPrPb Output ■ 6 dB Gain on all 150 Ω Buffer Outputs ■ Integrated 150 Ω Buffers


    Original     		PDF STV6618 TQFP44 STV6618 TQFP44

    IEC60947-3

    Abstract: 315NH2G 500NH3G-690 160NH1M IEC-60269 20NHC00G 400NH2G-690 6NHC00M-690 200NH1G-690 32NHC00G
    Text: a FUSE SYSTEM NH LOW VOLTAGE NH LOW VOLTAGE FUSE SYSTEM NH DIN Low Voltage Fuse System from Cooper Bussmann • • • • • • High Breaking Capacity 400Vac, 500Vac and 690Vac Insulated Tag variants available Dual Indication VDE 0636 Part 1 DIN 43 620 Parts 1 to 4 Standard Dimensions


    Original     		PDF 400Vac, 500Vac 690Vac 000/C00 IEC60947-3 315NH2G 500NH3G-690 160NH1M IEC-60269 20NHC00G 400NH2G-690 6NHC00M-690 200NH1G-690 32NHC00G

    Untitled

    Abstract: No abstract text available
    Text: 100N10F7 N-channel 100 V, 0.0062 Ω typ., 19 A, STripFET VII DeepGATE™ Power MOSFET in a PowerFLAT™ 5x6 package Datasheet - production data Features 1 2 Order code VDSS 100N10F7 100 V RDS on max PTOT ID 0.0073 Ω 19 A 5W 3 4 • Ultra low on-resistance


    Original     		PDF STL100N10F7 DocID023656

    sf x033h

    Abstract: X033H KA8532 C4228 KSC1623-Y 11GHz VCO R272 1n1001 SGM2016 ksc1623y
    Text: Final version 99.4.30 1.1GHZ DUAL PLL KB8825 INTRODUCTION 16−TSSOP−0044 The KB8825 is a high performance dual frequency synthesizer with two integrated high frequency pre-scalers for RF operation up to 1.1 GHz. The KB8825 is composed of modulus pre-scalers providing 64 and


    Original     		PDF KB8825 16-TSSOP-0044 KB8825 16-TSSOP consumpt00 sf x033h X033H KA8532 C4228 KSC1623-Y 11GHz VCO R272 1n1001 SGM2016 ksc1623y

    Untitled

    Abstract: No abstract text available
    Text: HiPerFETTM Power MOSFETs VDSS 100N10 IXFN150N10 ID25 RDS on 100 V 100 A 100 V 150 A trr £ 200 ns N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr 12 mW 12 mW TO-264 AA (IXFK) Symbol Test Conditions Maximum Ratings IXFK IXFN VDSS TJ = 25°C to 150°C


    Original     		PDF IXFK100N10 IXFN150N10 O-264 ID120

    100N10NS

    Abstract: BSC100N10NSF IEC61249-2-21 JESD22
    Text: 100N10NSF G OptiMOS 2 Power-Transistor Product Summary Features V DS 100 V • Very low gate charge for high frequency applications R DS on ,max 10 mΩ • Optimized for dc-dc conversion ID 90 A • N-channel, normal level PG-TDSON-8 • Excellent gate charge x R DS(on) product (FOM)


    Original     		PDF BSC100N10NSF IEC61249-2-21 100N10NS 100N10NS IEC61249-2-21 JESD22

    JESD22

    Abstract: DD-50 BSC100N10NSF GS8030
    Text: 100N10NSF G OptiMOS 2 Power-Transistor Product Summary Features • Very low gate charge for high frequency applications • Optimized for dc-dc conversion V DS 100 V R DS on ,max 10 mΩ ID 90 A • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM)


    Original     		PDF BSC100N10NSF 100N10NS JESD22 DD-50 GS8030

    c2555

    Abstract: TNP117 TNP156 TNP50 TNP176
    Text: ° NE W Type TNP Wet Tantalum Capacitors Non-Polar Operation { Tantalum Case Technology { Hermetically Sealed { Rugged Construction { Miniature Size { Low DCL { Low ESR { Long Active Life { Long Shelf Life GENERAL SPECIFICATIONS APPLICATIONS: Operating Temperature:


    Original     		PDF TNP406 006N1A TNP906 006N1B TNP207 006N1C TNP417 006N1F TNP256 010N1A c2555 TNP117 TNP156 TNP50 TNP176

    Diode D25 N10 R

    Abstract: Diode D25 N10 P
    Text: XYS HiPerFET Power MOSFETs 100N10 IXFN150 N10 v ¥ DSS ^D25 P DS on = = = 100 V 100/150 A 12 mQ 200 ns N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr K P relim inary data TO-264 AA (IXFK) Symbol Test Conditions Maximum Ratings IXFK


    OCR Scan     		PDF IXFK100N10 IXFN150 O-264 OT-227 E153432 Diode D25 N10 R Diode D25 N10 P

    mosfet 4400

    Abstract: MOSFET 11N80 mosfet 20n60 7n80 20N60 mosfet 4800 mosfet mosfet 4800 circuit 4500 MOS
    Text: Power MOSFETs and MOSFET Modules N-Channel Enhancement-Mode HiPerFET Power MOSFETs Standard and MegaMO£ ™FETs HDMOS II Eliminates Tradeoffs The High Performance MOSFET family of Power MOSFETs is designed to provide superior dv/dt performance while eliminating the need for discrete,


    OCR Scan     		PDF 100N10 90N20 73N30 44N50 48N50 36N60 67N10 75N10 42N20 50N20 mosfet 4400 MOSFET 11N80 mosfet 20n60 7n80 20N60 mosfet 4800 mosfet mosfet 4800 circuit 4500 MOS

    Untitled

    Abstract: No abstract text available
    Text: V DSS HiPerFET Power MOSFETs p ^D25 IXFK 100 N 10 100 V IXFN 150 N 10 100 V 100 A 150 A DS on 12 mfl 12 mfì N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low t^ TO-264 AA (IXFK) Symbol Test Conditions vVDSS v DGR T0 = 25°C to 150°C 100 100


    OCR Scan     		PDF O-264 D-68623 100N10 150N10 4bflh25b

    40n80

    Abstract: 13NB0 60N60 dsei 20-12 33N120 VUO 35-12 N 0 7 DS117-12A DS117-12 26n60 4410PI
    Text: Alphanumerical Index c CS CS CS CS CS CS CS CS CS CS CS CS CS CS 142-12 ¡08 142-16 io8 23-08 ¡02 23-12 ¡02 23-16 ¡02 300-12 io3 300-16 io3 35-08 ¡04 35-12 ¡04 35-14 ¡04 72-12 ¡08 72-16 ¡08 8-08 ¡02 8-12 ¡02 18 18 18 18 18 18 18 18 18 18 18 18 18


    OCR Scan     		PDF 5-10A 52-14N01 52-16N01 55-12N 55-14N07 55-18N 60-08N 60-16N 62-08N 62-12N 40n80 13NB0 60N60 dsei 20-12 33N120 VUO 35-12 N 0 7 DS117-12A DS117-12 26n60 4410PI