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    Rochester Electronics LLC IPI100N12S305AKSA1

    OPTLMOS N-CHANNEL POWER MOSFET
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    DigiKey IPI100N12S305AKSA1 Bulk 39,000 139
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    Rochester Electronics LLC IPI100N10S305AKSA1

    OPTLMOS N-CHANNEL POWER MOSFET
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    DigiKey IPI100N10S305AKSA1 Bulk 20,100 160
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    STMicroelectronics STF100N10F7

    MOSFET N CH 100V 45A TO-220FP
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    DigiKey STF100N10F7 Tube 8,912 1
    • 1 $3.25
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    Avnet Americas STF100N10F7 Tube 13 Weeks 1,000
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    STMicroelectronics STF100N10F7 2,155 1
    • 1 $2.59
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    TME STF100N10F7 1
    • 1 $2.13
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    ComSIT USA STF100N10F7 1,000
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    Avnet Silica STF100N10F7 9,900 14 Weeks 50
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    Chip One Stop STF100N10F7 Tube 980 0 Weeks, 1 Days 1
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    EBV Elektronik STF100N10F7 900 14 Weeks 50
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    Vyrian STF100N10F7 2,344
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    Rochester Electronics LLC NDBA100N10BT4H

    MOSFET N-CH 100V 100A D2PAK
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    DigiKey NDBA100N10BT4H Bulk 8,765 310
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    Infineon Technologies AG IPB100N10S305ATMA1

    MOSFET N-CH 100V 100A TO263-3
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    DigiKey IPB100N10S305ATMA1 Digi-Reel 1,322 1
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    IPB100N10S305ATMA1 Cut Tape 1,322 1
    • 1 $6.16
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    • 100 $2.9944
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    Rochester Electronics IPB100N10S305ATMA1 2,104 1
    • 1 $2.8
    • 10 $2.8
    • 100 $2.63
    • 1000 $2.38
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    EBV Elektronik IPB100N10S305ATMA1 13 Weeks 1,000
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    Vyrian IPB100N10S305ATMA1 2,316
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    100N1 Datasheets Context Search

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    S3 DIODE schottky

    Abstract: 100N1
    Text: Advanced Technical Information HiPerFETTM Power MOSFETs IXFN 100N10S1 IXFN 100N10S2 with Schottky Diodes IXFN 100N10S3 Parallel, Buck & Boost Configurations for SMPS, PFC & Motor Control Circuits S1 S2 4 D VDSS ID25 RDS(on) = 100 V = 100 A = 15 mW S3 4(D)


    Original
    100N10S1 100N10S2 100N10S3 OT-227 E153432 S3 DIODE schottky 100N1 PDF

    Untitled

    Abstract: No abstract text available
    Text: HiPerFETTM Power MOSFETs IXFN 100N10S1 IXFN 100N10S2 with Schottky Diodes IXFN 100N10S3 m~ê~ääÉäI=_ìÅâ=C=_ççëí=`çåÑáÖìê~íáçåë Ñçê=pjmpI=mc`=C=jçíçê=`çåíêçä=`áêÅìáíë S1 VDSS ID25 RDS on S2 QEaF = 100 V = 100 A Ω


    Original
    100N10S1 100N10S2 100N10S3 PDF

    Untitled

    Abstract: No abstract text available
    Text: HIGH EFFICIENCY SCHOTTKY RECTIFIER DIODE SB30-100N1 • Hermetic Ceramic Surface Mount Package TO-267AA • Low Forward Voltage Drop • Typical applications include Switching Power Supplies, Converters, Free Wheeling Diodes and Reverse Battery Protection


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    SB30-100N1 O-267AA) SB30-100N1-JQRS PDF

    S3 DIODE schottky

    Abstract: 100N10S1
    Text: Advanced Technical Information HiPerFETTM Power MOSFETs IXFN 100N10S1 IXFN 100N10S2 with Schottky Diodes IXFN 100N10S3 Parallel, Buck & Boost Configurations for SMPS, PFC & Motor Control Circuits S1 S2 4 D VDSS ID25 RDS(on) = 100 V = 100 A = 15 mW S3 4(D)


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    100N10S1 100N10S2 100N10S3 OT-227 E153432 S3 DIODE schottky PDF

    100N10S2

    Abstract: 100N10S1 pehf
    Text: HiPerFETTM Power MOSFETs IXFN 100N10S1 IXFN 100N10S2 with Schottky Diodes IXFN 100N10S3 m~ê~ääÉäI=_ìÅâ=C=_ççëí=`çåÑáÖìê~íáçåë Ñçê=pjmpI=mc`=C=jçíçê=`çåíêçä=`áêÅìáíë S1 VDSS ID25 RDS on S2 QEaF = 100 V = 100 A Ω


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    100N10S1 100N10S2 100N10S3 100N10S2 100N10S1 pehf PDF

    100N120

    Abstract: 25N120 100N-120 150N120 75N120 15N120 IC IGBT 25N120 100N170 IC IGBT 15N120 mj 1352
    Text: Chip-Shortform2004.pmd IC TVJM 1200 IXED 15N120 IXED 25N120 IXED 50N120 IXED 75N120 IXED 100N120 IXED 150N120 1700 IXED 75N170 IXED 100N170 °C 150 Eoff Eon inductive load TVJ = 125°C Qg on Internal Gate Sithickn. A A mm • • • • • • 20 25 50


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    15N120 25N120 50N120 75N120 100N120 150N120 75N170 100N170 100N-120 IC IGBT 25N120 100N170 IC IGBT 15N120 mj 1352 PDF

    100N1

    Abstract: No abstract text available
    Text: HIGH EFFICIENCY SCHOTTKY RECTIFIER DIODE SB30-100N1 • Hermetic Ceramic Surface Mount Package TO-267AA • Low Forward Voltage Drop • Typical applications include Switching Power Supplies, Converters, Free Wheeling Diodes and Reverse Battery Protection


    Original
    SB30-100N1 O-267AA) SB30-100N1-JQRS 100N1 PDF

    E 150N10

    Abstract: 150N10 100N10 IXFK100N10 IXFN150N10
    Text: HiPerFETTM Power MOSFETs VDSS 100N10 IXFN150N10 ID25 RDS on 100 V 100 A 100 V 150 A trr £ 200 ns N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr 12 mW 12 mW TO-264 AA (IXFK) Symbol Test Conditions Maximum Ratings IXFK IXFN VDSS TJ = 25°C to 150°C


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    IXFK100N10 IXFN150N10 O-264 ID120 E 150N10 150N10 100N10 IXFK100N10 IXFN150N10 PDF

    diode AR S1 99

    Abstract: S3 DIODE schottky 486 smps
    Text: Advanced Technical Information Parallel, Buck & Boost Configurations for SMPS, PFC & Motor Control Circuits S1 HiPerFET MOSFET Diode Test Conditions VDSS TJ = 25°C to 150°C 100 V VDGR TJ = 25°C to 150°C; RGS = 1 MW 100 V VGS Continuous ±20 V Transient


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    100N10S1 100N10S2 100N10S3 diode AR S1 99 S3 DIODE schottky 486 smps PDF

    Untitled

    Abstract: No abstract text available
    Text: 100N10F7 N-channel 100 V, 0.0062 Ω typ., 19 A, STripFET VII DeepGATE™ Power MOSFET in a PowerFLAT™ 5x6 package Datasheet - production data Features 1 Type VDSS 100N10F7 100 V RDS on max PTOT ID 0.0073 Ω 19 A 5W 2 3 • Ultra low on-resistance


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    STL100N10F7 DocID023656 PDF

    100N10F7

    Abstract: No abstract text available
    Text: 100N10F7, 100N10F7, 100N10F7 N-channel 100 V, 0.0068 Ω typ., 80 A, STripFET VII DeepGATE™ Power MOSFET in DPAK, TO-220FP and TO-220 packages Datasheet — preliminary data Features TAB Type VDSS RDS on max 100 V 0.008 Ω 100N10F7 100N10F7


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    STD100N10F7, STF100N10F7, STP100N10F7 O-220FP O-220 STD100N10F7 STF100N10F7 O-220FP O-220 100N10F7 PDF

    CON AT62B

    Abstract: ISA-A19 ISP1581 XC95144 philips choke ferrite isp1581 scanner 8051 philips details scanner schematics circuit for 8051 interface with memory Xilinx usb cable Schematic
    Text: UM10020-01 ISP1581 Scanner Eval Kit User’s Guide September 2002 File name of the previous revision was UM10003-02.pdf User’s Guide Rev 1.2 Revision History: Version Date 1.2 Sep, 2002 1.1 July 2002 1.0 April, 2002 Descriptions Divided the ISP1581 Evaluation Kit User’s Guide UM10003-02.pdf


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    UM10020-01 ISP1581 UM10003-02 UM10019-01 UM10020-01 CON AT62B ISA-A19 XC95144 philips choke ferrite isp1581 scanner 8051 philips details scanner schematics circuit for 8051 interface with memory Xilinx usb cable Schematic PDF

    STV6618

    Abstract: TQFP44
    Text: STV6618 Video Switch Matrix for DVDs Main Features • I²C Bus Control ■ 5 Y/CVBS Inputs, 3 Y/CVBS Outputs ■ 3 C Inputs, 1 C Output ■ 2 RGB/YPrPb Inputs, 1 RGB/YPrPb Output ■ 6 dB Gain on all 150 Ω Buffer Outputs ■ Integrated 150 Ω Buffers


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    STV6618 TQFP44 STV6618 TQFP44 PDF

    IEC60947-3

    Abstract: 315NH2G 500NH3G-690 160NH1M IEC-60269 20NHC00G 400NH2G-690 6NHC00M-690 200NH1G-690 32NHC00G
    Text: a FUSE SYSTEM NH LOW VOLTAGE NH LOW VOLTAGE FUSE SYSTEM NH DIN Low Voltage Fuse System from Cooper Bussmann • • • • • • High Breaking Capacity 400Vac, 500Vac and 690Vac Insulated Tag variants available Dual Indication VDE 0636 Part 1 DIN 43 620 Parts 1 to 4 Standard Dimensions


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    400Vac, 500Vac 690Vac 000/C00 IEC60947-3 315NH2G 500NH3G-690 160NH1M IEC-60269 20NHC00G 400NH2G-690 6NHC00M-690 200NH1G-690 32NHC00G PDF

    toy helicopter remote control circuit diagram

    Abstract: TDA 2377 nokia bts str z 4267 rc helicopter circuit diagram PG-TO252-5-11 footprint nokia 5230 hardware TDA 2525 Campus Italia Vol 1 how to make rc helicopter
    Text: Infineon Solutions for Transportation 24 V, Leisure Vehicles and Small Electrical Carts [ www.infineon.com ] 2 Contents Introduction 04 Application Segments 06 Trucks 08 Leisure Vehicles 10 Electrical Vehicles 12 Products Microcontrollers 14 Automotive Power


    Original
    B192-H9213-X-X-7600 toy helicopter remote control circuit diagram TDA 2377 nokia bts str z 4267 rc helicopter circuit diagram PG-TO252-5-11 footprint nokia 5230 hardware TDA 2525 Campus Italia Vol 1 how to make rc helicopter PDF

    mosfet 4400

    Abstract: MOSFET 11N80 mosfet 20n60 7n80 20N60 mosfet 4800 mosfet mosfet 4800 circuit 4500 MOS
    Text: Power MOSFETs and MOSFET Modules N-Channel Enhancement-Mode HiPerFET Power MOSFETs Standard and MegaMO£ ™FETs HDMOS II Eliminates Tradeoffs The High Performance MOSFET family of Power MOSFETs is designed to provide superior dv/dt performance while eliminating the need for discrete,


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    100N10 90N20 73N30 44N50 48N50 36N60 67N10 75N10 42N20 50N20 mosfet 4400 MOSFET 11N80 mosfet 20n60 7n80 20N60 mosfet 4800 mosfet mosfet 4800 circuit 4500 MOS PDF

    Untitled

    Abstract: No abstract text available
    Text: V DSS HiPerFET Power MOSFETs p ^D25 IXFK 100 N 10 100 V IXFN 150 N 10 100 V 100 A 150 A DS on 12 mfl 12 mfì N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low t^ TO-264 AA (IXFK) Symbol Test Conditions vVDSS v DGR T0 = 25°C to 150°C 100 100


    OCR Scan
    O-264 D-68623 100N10 150N10 4bflh25b PDF

    Untitled

    Abstract: No abstract text available
    Text: 100N10F7 N-channel 100 V, 0.0062 Ω typ., 19 A, STripFET VII DeepGATE™ Power MOSFET in a PowerFLAT™ 5x6 package Datasheet - production data Features 1 2 Order code VDSS 100N10F7 100 V RDS on max PTOT ID 0.0073 Ω 19 A 5W 3 4 • Ultra low on-resistance


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    STL100N10F7 DocID023656 PDF

    sf x033h

    Abstract: X033H KA8532 C4228 KSC1623-Y 11GHz VCO R272 1n1001 SGM2016 ksc1623y
    Text: Final version 99.4.30 1.1GHZ DUAL PLL KB8825 INTRODUCTION 16−TSSOP−0044 The KB8825 is a high performance dual frequency synthesizer with two integrated high frequency pre-scalers for RF operation up to 1.1 GHz. The KB8825 is composed of modulus pre-scalers providing 64 and


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    KB8825 16-TSSOP-0044 KB8825 16-TSSOP consumpt00 sf x033h X033H KA8532 C4228 KSC1623-Y 11GHz VCO R272 1n1001 SGM2016 ksc1623y PDF

    Untitled

    Abstract: No abstract text available
    Text: HiPerFETTM Power MOSFETs VDSS 100N10 IXFN150N10 ID25 RDS on 100 V 100 A 100 V 150 A trr £ 200 ns N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr 12 mW 12 mW TO-264 AA (IXFK) Symbol Test Conditions Maximum Ratings IXFK IXFN VDSS TJ = 25°C to 150°C


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    IXFK100N10 IXFN150N10 O-264 ID120 PDF

    100N10NS

    Abstract: BSC100N10NSF IEC61249-2-21 JESD22
    Text: 100N10NSF G OptiMOS 2 Power-Transistor Product Summary Features V DS 100 V • Very low gate charge for high frequency applications R DS on ,max 10 mΩ • Optimized for dc-dc conversion ID 90 A • N-channel, normal level PG-TDSON-8 • Excellent gate charge x R DS(on) product (FOM)


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    BSC100N10NSF IEC61249-2-21 100N10NS 100N10NS IEC61249-2-21 JESD22 PDF

    JESD22

    Abstract: DD-50 BSC100N10NSF GS8030
    Text: 100N10NSF G OptiMOS 2 Power-Transistor Product Summary Features • Very low gate charge for high frequency applications • Optimized for dc-dc conversion V DS 100 V R DS on ,max 10 mΩ ID 90 A • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM)


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    BSC100N10NSF 100N10NS JESD22 DD-50 GS8030 PDF

    c2555

    Abstract: TNP117 TNP156 TNP50 TNP176
    Text: ° NE W Type TNP Wet Tantalum Capacitors Non-Polar Operation { Tantalum Case Technology { Hermetically Sealed { Rugged Construction { Miniature Size { Low DCL { Low ESR { Long Active Life { Long Shelf Life GENERAL SPECIFICATIONS APPLICATIONS: Operating Temperature:


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    TNP406 006N1A TNP906 006N1B TNP207 006N1C TNP417 006N1F TNP256 010N1A c2555 TNP117 TNP156 TNP50 TNP176 PDF

    40n80

    Abstract: 13NB0 60N60 dsei 20-12 33N120 VUO 35-12 N 0 7 DS117-12A DS117-12 26n60 4410PI
    Text: Alphanumerical Index c CS CS CS CS CS CS CS CS CS CS CS CS CS CS 142-12 ¡08 142-16 io8 23-08 ¡02 23-12 ¡02 23-16 ¡02 300-12 io3 300-16 io3 35-08 ¡04 35-12 ¡04 35-14 ¡04 72-12 ¡08 72-16 ¡08 8-08 ¡02 8-12 ¡02 18 18 18 18 18 18 18 18 18 18 18 18 18


    OCR Scan
    5-10A 52-14N01 52-16N01 55-12N 55-14N07 55-18N 60-08N 60-16N 62-08N 62-12N 40n80 13NB0 60N60 dsei 20-12 33N120 VUO 35-12 N 0 7 DS117-12A DS117-12 26n60 4410PI PDF