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    7N80 Search Results

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    7N80 Price and Stock

    STMicroelectronics STL7N80K5

    MOSFET N-CH 800V 3.6A POWERFLAT
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    DigiKey STL7N80K5 Reel 6,000 3,000
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    • 10000 $0.92905
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    Mouser Electronics STL7N80K5 3,410
    • 1 $2.36
    • 10 $1.71
    • 100 $1.23
    • 1000 $0.941
    • 10000 $0.921
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    STMicroelectronics STL7N80K5 3,368 1
    • 1 $2.31
    • 10 $1.68
    • 100 $1.21
    • 1000 $1
    • 10000 $1
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    Avnet Silica STL7N80K5 15 Weeks 3,000
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    Chip1Stop STL7N80K5 Cut Tape 2,996
    • 1 $1.97
    • 10 $1.64
    • 100 $1.27
    • 1000 $0.886
    • 10000 $0.859
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    EBV Elektronik STL7N80K5 15 Weeks 3,000
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    Infineon Technologies AG SPP17N80C3XKSA1

    MOSFET N-CH 800V 17A TO220-3
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    DigiKey SPP17N80C3XKSA1 Tube 2,048 1
    • 1 $5.38
    • 10 $5.38
    • 100 $5.38
    • 1000 $2.10275
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    Avnet Americas SPP17N80C3XKSA1 Tube 500 15 Weeks 50
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    • 100 $1.1821
    • 1000 $1.13988
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    Newark SPP17N80C3XKSA1 Bulk 848 1
    • 1 $4.12
    • 10 $3.93
    • 100 $3.59
    • 1000 $3.02
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    Bristol Electronics SPP17N80C3XKSA1 13
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    Rochester Electronics SPP17N80C3XKSA1 1 1
    • 1 $2.34
    • 10 $2.34
    • 100 $2.2
    • 1000 $1.99
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    EBV Elektronik SPP17N80C3XKSA1 16 Weeks 500
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    Win Source Electronics SPP17N80C3XKSA1 132,000
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    • 100 $1.573
    • 1000 $1.319
    • 10000 $1.319
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    Vishay Siliconix SIHA17N80E-GE3

    N-CHANNEL 800V
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SIHA17N80E-GE3 Cut Tape 1,980 1
    • 1 $4.83
    • 10 $3.371
    • 100 $4.83
    • 1000 $2.1825
    • 10000 $2.1825
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    SIHA17N80E-GE3 Reel 1,000 1,000
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    • 1000 $2.1825
    • 10000 $2.1825
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    Vishay Siliconix SIHP17N80E-GE3

    MOSFET N-CH 800V 15A TO220AB
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SIHP17N80E-GE3 Tube 1,000 1
    • 1 $3.85
    • 10 $2.69
    • 100 $3.85
    • 1000 $3.85
    • 10000 $3.85
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    Infineon Technologies AG SPB17N80C3ATMA1

    MOSFET N-CH 800V 17A TO263-3
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SPB17N80C3ATMA1 Reel 1,000 1,000
    • 1 -
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    • 1000 $2.10275
    • 10000 $2.10275
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    Chip1Stop SPB17N80C3ATMA1 Cut Tape 2,000
    • 1 $4.11
    • 10 $2.89
    • 100 $2.25
    • 1000 $2.09
    • 10000 $2.09
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    EBV Elektronik SPB17N80C3ATMA1 113,000 16 Weeks 1,000
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    New Advantage Corporation SPB17N80C3ATMA1 90,000 1
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    • 1000 $3.12
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    Win Source Electronics SPB17N80C3ATMA1 48,100
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    • 100 $2.392
    • 1000 $2.073
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    Find more 7N80 price and stock on Findchips.com

    7N80 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    7n80

    Abstract: 7N80 TO220 7N80L-TF3-T 66a 523
    Text: UNISONIC TECHNOLOGIES CO., LTD 7N80 Preliminary Power MOSFET 7A, 800V N-CHANNEL POWER MOSFET „ DESCRIPTION 1 The UTC 7N80 is an N-channel mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology specializes in allowing a


    Original     		PDF O-220 O-220F O-220F1 O-263 QW-R502-523 7n80 7N80 TO220 7N80L-TF3-T 66a 523

    7N80

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 7N80 Power MOSFET 7A, 800V N-CHANNEL POWER MOSFET 1   * RDS on <1.8Ω@ VGS =10V * High switching speedY * 100% avalanche tested  1 1 TO-220F2 TO-220F1 1 1 FEATURES TO-220F TO-220 DESCRIPTION The UTC 7N80 is an N-channel mode power MOSFET using UTC’s


    Original     		PDF O-220F2 O-220F1 O-220F O-220 O-263 O-220F3 QW-R502-523 7N80

    7N80 TO220

    Abstract: 7n80
    Text: UNISONIC TECHNOLOGIES CO., LTD 7N80 Power MOSFET 7A, 800V N-CHANNEL POWER MOSFET 1 „ DESCRIPTION The UTC 7N80 is an N-channel mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology specializes in allowing a


    Original     		PDF O-220 O-220F O-220F1 O-220F2 O-263 QW-R502-523 7N80 TO220 7n80

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 7N80 Power MOSFET 7A, 800V N-CHANNEL POWER MOSFET 1  DESCRIPTION The UTC 7N80 is an N-channel mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology specializes in allowing a minimum


    Original     		PDF O-220F O-220 O-220F1 O-220F2 O-263 QW-R502-523

    7N80

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 7N80 Power MOSFET 7A, 800V N-CHANNEL POWER MOSFET 1 „ DESCRIPTION The UTC 7N80 is an N-channel mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology specializes in allowing a minimum


    Original     		PDF O-220 O-220F O-220F1 O-220F2 O-263 QW-R502-523 7N80

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 7N80 Preliminary Power MOSFET 7.0 Amps, 800 Volts N-CHANNEL POWER MOSFET „ DESCRIPTION 1 The UTC 7N80 is an N-channel mode power MOSFET using UTC’s advanced technology to provide costomers with planar stripe and DMOS technology. This technology specializes in allowing a


    Original     		PDF O-220 O-220F O-220F1 O-263 QW-R502-523

    DIODE 929

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 7N80Z Power MOSFET 7A, 800V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 7N80Z is an N-channel mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology specializes in allowing a


    Original     		PDF 7N80Z 7N80Z 7N80ZL-TF1-T 7N80ZG-TF1-T QW-R502-929, DIODE 929

    IXFI7N80P

    Abstract: IXFP7N80P IXFA7N80P 7N80P IXFI 7n80
    Text: PolarHVTM HiPerFET Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXFA 7N80P IXFI 7N80P IXFP 7N80P VDSS ID25 RDS on trr Symbol Test Conditions VDSS VDGR TJ = 25°C to 175°C TJ = 25°C to 175°C; RGS = 1 MΩ 800 800 V V VGS VGSM


    Original     		PDF 7N80P O-263 O-220, O-220 IXFI7N80P IXFP7N80P IXFA7N80P 7N80P IXFI 7n80

    9n90c

    Abstract: 9n50c IGBT 20N50 kmb*050n60p 7N65C 5n50c smd diode S4 58a 2N60C 2N60 MOSFET SMPS str TV SMPS
    Text: Power MOS -FET Selection Guide MOS-FET 2007. 2007. First First Version Version Http://www.kec.co.kr KEC-H Corp. Product classification First & Best First & Best MOSFET MOSFET SS-MOSFET MOSFET Trench TrenchMOSFET MOSFET Planar PlanarMOSFET MOSFET Pw Pw<<1W


    Original     		PDF 2N7000 2N7000A 2N7000K 70Max 45Max 55Max 80Max 9n90c 9n50c IGBT 20N50 kmb*050n60p 7N65C 5n50c smd diode S4 58a 2N60C 2N60 MOSFET SMPS str TV SMPS

    Untitled

    Abstract: No abstract text available
    Text: 7N80K5, 7N80K5, 7N80K5 N-channel 800 V, 0.95 Ω typ., 6 A Zener-protected SuperMESH 5 Power MOSFETs in DPAK, TO-220 and IPAK packages Datasheet - production data Features TAB Order codes 2 3 1 VDS RDS on max ID PTOT 800 V 1.2 Ω 6A 110 W 7N80K5


    Original     		PDF STD7N80K5, STP7N80K5, STU7N80K5 O-220 STD7N80K5 STP7N80K5 O-220 AM01476v1 DocID023448

    7n80

    Abstract: Al3m 7N80 TO220 3VD450800YL
    Text: 3VD450800YL 3VD450800YL 高压MOSFET芯片 描述 ¾ 3VD450800YL为采用硅外延工艺制造的N沟道 增强型800V高压MOS功率场效应晶体管； ¾ 先进的高压分压终止环结构； ¾ 较高的雪崩能量； ¾ 漏源二极管恢复时间快；


    Original     		PDF 3VD450800YL 3VD450800YL 3VD450800YLN 800VMOS O-220, 340mX506m O-220 800VVGS 10VID 7n80 Al3m 7N80 TO220

    7N80K5

    Abstract: No abstract text available
    Text: 7N80K5, 7N80K5 N-channel 800 V, 0.95 Ω typ., 6 A Zener-protected SuperMESH 5 Power MOSFETs in TO-220FP and I2PAKFP packages Datasheet - production data Features Order codes VDS RDS on max ID PTOT 800 V 1.2 Ω 6A 25 W 7N80K5 7N80K5 • Worldwide best FOM (figure of merit)


    Original     		PDF STF7N80K5, STFI7N80K5 O-220FP STF7N80K5 O-220FP DocID025377 7N80K5

    Untitled

    Abstract: No abstract text available
    Text: 3VD450800YL 3VD450800YL HIGH VOLTAGE MOSFET CHIPS DESCRIPTION ¾ 3VD450800YL is a High voltage N-Channel enhancement mode power MOS-FET chip fabricated in advanced silicon epitaxial planar technology. ¾ Advanced termination scheme to provide enhanced voltage-blocking capability.


    Original     		PDF 3VD450800YL 3VD450800YL O-220

    C1162

    Abstract: C1280 26n60 60N25 C1328 80N06 120N20 C1146 C1104 C1158
    Text: HiPerFETTM F-Series Contents VDSS max V 60 70 ID cont TC = 25 °C A 76 RDS(on) TC = 25 °C W 0.011 0.012 80 0.009 110 0.006 180 0.006 200 0.006 76 0.011 0.012 105 110 0.007 0.006 180 0.007 0.006 0.006 TO-247 (IXFH) PLUS247 (IXFX) TO-268 (IXFT) TO-264 (IXFK)


    Original     		PDF O-247 PLUS247 ISOPLUS247TM O-204 O-268 O-264 76N06-11 76N06-12 80N06 180N06 C1162 C1280 26n60 60N25 C1328 120N20 C1146 C1104 C1158

    7N80K5

    Abstract: V/7N80K5
    Text: 7N80K5 N-channel 800 V, 0.95 Ω typ., 3.6 A Zener-protected SuperMESH 5 Power MOSFET in a PowerFLAT™ 5x6 VHV package Datasheet − production data Features Order code VDS RDS on max. ID 7N80K5 800 V 1.2 Ω 3.6 A • Outstanding RDS(on)*area 1 • Worldwide best FOM (figure of merit)


    Original     		PDF STL7N80K5 DocID025551 7N80K5 V/7N80K5

    7N80K5

    Abstract: STU7N80K5 marking 4J to252
    Text: 7N80K5, 7N80K5, 7N80K5, 7N80K5 N-channel 800 V, 0.95 Ω typ., 6 A Zener-protected SuperMESH 5 Power MOSFET in DPAK, TO-220FP, TO-220 and IPAK packages Datasheet — preliminary data Features TAB Type VDS RDS on max ID PTOT 7N80K5 7N80K5


    Original     		PDF STD7N80K5, STF7N80K5, STP7N80K5, STU7N80K5 O-220FP, O-220 STD7N80K5 STF7N80K5 STP7N80K5 7N80K5 STU7N80K5 marking 4J to252

    7N80

    Abstract: 8N80 gs 1117 ax 17n80
    Text: n TV V C U 1 A I J IXFH 7N80 ,XFM 7N80 IXFH 8N80 HiPerFET Power MOSFETs 1 TM IXFM 8N80 IXFH/FM 7N80 IXFH/FM 8N80 □ VDSs ^D25 DS on 800 V 800 V 7A 8A 1.4 a 1.2 Q N-Channel Enhancement Mode High d v /d t, L o w t ^ , HDMOS Family Symbol Test Conditions


    OCR Scan     		PDF

    7N80E

    Abstract: 7N80 MOSFET MTW
    Text: MOTOROLA Order this document by 7N80E/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet MTW 7N80E TMOS E-FET ™ Power Field Effect Transistor T O -2 4 7 W ith Isolated Mounting Hole Motorola Preferred Device TMOS POWER FET 7.0 AMPERES 800 VOLTS


    OCR Scan     		PDF MTW7N80E/D 7N80E 340K-01 7N80E 7N80 MOSFET MTW

    6N60E

    Abstract: 10N100E 14n50e MOSFET 20n50e 8n50e 35N15E 32N20E 20N50E 6N100E 16N40E
    Text: ir TMOS TM OS Power MOSFETs Plastic Packages — TO-247 TO-247 CASE 340F-03 MTW PREFIX — Isolateci TO-218 Table 4 — N-Channel TO-247 VDss (Volts) Min RDS(on) I d (Ohms) (Amps) Max Device 1000 800 600 2 3 M TW 6N100E Table 5 — N- and P-Channel Isolated TO-218


    OCR Scan     		PDF O-247 O-218 340F-03 340B-03 O-247 6N100E 10N100E 6N60E 14n50e MOSFET 20n50e 8n50e 35N15E 32N20E 20N50E 16N40E

    mosfet 4400

    Abstract: MOSFET 11N80 mosfet 20n60 7n80 20N60 mosfet 4800 mosfet mosfet 4800 circuit 4500 MOS
    Text: Power MOSFETs and MOSFET Modules N-Channel Enhancement-Mode HiPerFET Power MOSFETs Standard and MegaMO£ ™FETs HDMOS II Eliminates Tradeoffs The High Performance MOSFET family of Power MOSFETs is designed to provide superior dv/dt performance while eliminating the need for discrete,


    OCR Scan     		PDF 100N10 90N20 73N30 44N50 48N50 36N60 67N10 75N10 42N20 50N20 mosfet 4400 MOSFET 11N80 mosfet 20n60 7n80 20N60 mosfet 4800 mosfet mosfet 4800 circuit 4500 MOS

    75N1

    Abstract: 6n80 IXTM20N60 IRFP 260 M ixfh K 15N60 42N20 ixtn 44N50 KS 4400 204 3B
    Text: HiPerF ET Power MOSFETs ?D g UE D f N-Channel Enhancement-Mode with Fast Intrinsic Diode Type V DSS max. ► New ► IXFH 76N07-11 ► IXFH 76N07-12 IXFH IXFH IXFH IXFH IXFH 67N10 75N10 42N20 50N20 58N20 V 70 100 200 IXFH 35N30 IXFH 40N30 300 IXFH IXFH


    OCR Scan     		PDF 76N07-11 76N07-12 67N10 75N10 42N20 50N20 58N20 O-247 O-204 75N1 6n80 IXTM20N60 IRFP 260 M ixfh K 15N60 ixtn 44N50 KS 4400 204 3B

    40n80

    Abstract: 13NB0 60N60 dsei 20-12 33N120 VUO 35-12 N 0 7 DS117-12A DS117-12 26n60 4410PI
    Text: Alphanumerical Index c CS CS CS CS CS CS CS CS CS CS CS CS CS CS 142-12 ¡08 142-16 io8 23-08 ¡02 23-12 ¡02 23-16 ¡02 300-12 io3 300-16 io3 35-08 ¡04 35-12 ¡04 35-14 ¡04 72-12 ¡08 72-16 ¡08 8-08 ¡02 8-12 ¡02 18 18 18 18 18 18 18 18 18 18 18 18 18


    OCR Scan     		PDF 5-10A 52-14N01 52-16N01 55-12N 55-14N07 55-18N 60-08N 60-16N 62-08N 62-12N 40n80 13NB0 60N60 dsei 20-12 33N120 VUO 35-12 N 0 7 DS117-12A DS117-12 26n60 4410PI

    MTM13N50E

    Abstract: P40N10 24N40 p50n05 8n50e Power MOSFET Cross Reference Guide motorola 20n50e TP50N05E IRF510 mosfet irf640 33N10E
    Text: ir tmos Cross-Reference The follow ing table represents a cro ss-re fe re n ce guide for all T M O S P ow er M O SFETs w hich are m an ufacture d directly by M otorola. W here the M otorola part nu m be r differs from the Industry part num ber, the M otorola de vice is a “form , fit and fu n ctio n ”


    OCR Scan     		PDF BUZ10 BUZ11 BUZ11A BUZ11S2 BUZ15 BUZ171 BUZ20 BUZ21 BUZ23 BUZ31 MTM13N50E P40N10 24N40 p50n05 8n50e Power MOSFET Cross Reference Guide motorola 20n50e TP50N05E IRF510 mosfet irf640 33N10E

    IXfk 75 N 50

    Abstract: 15N80 50N-2 110N06 n 100N10 110N06 10n90 IXFH40N30 ixfk73n30
    Text: HiPerFET Power MOSFETs N-Channel Enhancement-Mode with Fast Intrinsic Diode Type DSS 0 25 DS(on) max. C lss typ. Tc = 25°C New Tc = 25°C n C rss typ. max. qb max. thJC max. D max. pF PF ns nC K/W W IXFH 76N06-11 IXFH 76N06-12 60 76 0.011 0.012 4400


    OCR Scan     		PDF 76N06-11 76N06-12 76N07-11 76N07-12 67N10 75N10 42N20 50N20 50N20S 58N20 IXfk 75 N 50 15N80 50N-2 110N06 n 100N10 110N06 10n90 IXFH40N30 ixfk73n30