6N60E
Abstract: 10N100E 14n50e MOSFET 20n50e 8n50e 35N15E 32N20E 20N50E 6N100E 16N40E
Text: ir TMOS TM OS Power MOSFETs Plastic Packages — TO-247 TO-247 CASE 340F-03 MTW PREFIX — Isolateci TO-218 Table 4 — N-Channel TO-247 VDss (Volts) Min RDS(on) I d (Ohms) (Amps) Max Device 1000 800 600 2 3 M TW 6N100E Table 5 — N- and P-Channel Isolated TO-218
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O-247
O-218
340F-03
340B-03
O-247
6N100E
10N100E
6N60E
14n50e
MOSFET 20n50e
8n50e
35N15E
32N20E
20N50E
16N40E
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Untitled
Abstract: No abstract text available
Text: MOTOROLA O rder this docum ent by M TW 6N100E/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet 6N100E TMOS E-FET ™ Power Field Effect Transistor T O -2 4 7 W ith Isolated Mounting Hole Motorola Preferred Device TMOS POWER FET 6.0 AMPERES 1000 VOLTS
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6N100E/D
MTW6N100E
340K-01
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6N100E
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet TM O S E -FE T ™ P ow er Field E ffe c t T ran sisto r T O -2 4 7 W ith Is o la te d M ounting H ole TMOS POWER FET 6.0 AMPERES 1000 VOLTS N-Channel Enhancement-Mode Silicon Gate T h is h ig h v o lta g e M O S F E T u s e s a n a d v a n c e d te rm in a tio n
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MTM13N50E
Abstract: P40N10 24N40 p50n05 8n50e Power MOSFET Cross Reference Guide motorola 20n50e TP50N05E IRF510 mosfet irf640 33N10E
Text: ir tmos Cross-Reference The follow ing table represents a cro ss-re fe re n ce guide for all T M O S P ow er M O SFETs w hich are m an ufacture d directly by M otorola. W here the M otorola part nu m be r differs from the Industry part num ber, the M otorola de vice is a “form , fit and fu n ctio n ”
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BUZ10
BUZ11
BUZ11A
BUZ11S2
BUZ15
BUZ171
BUZ20
BUZ21
BUZ23
BUZ31
MTM13N50E
P40N10
24N40
p50n05
8n50e
Power MOSFET Cross Reference Guide
motorola 20n50e
TP50N05E
IRF510 mosfet irf640
33N10E
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