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    75N1 Search Results

    75N1 Result Highlights (1)

    Part ECAD Model Manufacturer Description Download Buy
    LM2675N-12/NOPB Texas Instruments SIMPLE SWITCHER® 6.5V to 40V, 1A Low Component Count Step-Down Regulator 8-PDIP -40 to 125 Visit Texas Instruments Buy
    SF Impression Pixel

    75N1 Price and Stock

    Micro Commercial Components MCP75N10Y-BP

    N-CHANNEL MOSFET,TO-220AB(H)
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    DigiKey MCP75N10Y-BP Tube 3,505 1
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    Infineon Technologies AG IKQ75N120CS6XKSA1

    IGBT TRENCH FS 1200V 150A TO247
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    DigiKey IKQ75N120CS6XKSA1 Tube 2,266 1
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    Avnet Americas IKQ75N120CS6XKSA1 Tube 200 19 Weeks 1
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    Newark IKQ75N120CS6XKSA1 Bulk 358 1
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    Littelfuse Inc IXTA75N10P

    MOSFET N-CH 100V 75A TO263
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    DigiKey IXTA75N10P Tube 844 1
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    Infineon Technologies AG IKQ75N120CH7XKSA1

    IGBT TRENCH FS 1200V 82A TO247-3
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    DigiKey IKQ75N120CH7XKSA1 Tube 518 1
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    Mouser Electronics IKQ75N120CH7XKSA1 418
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    Chip1Stop IKQ75N120CH7XKSA1 Tube 239
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    Littelfuse Inc IXTH75N10L2

    MOSFET N-CH 100V 75A TO247
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    DigiKey IXTH75N10L2 Tube 409 1
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    Newark IXTH75N10L2 Bulk 290 1
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    Find more 75N1 price and stock on Findchips.com

    75N1 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: HiPerFETTM Power MOSFETs IXFH 75N10Q IXFT 75N10Q VDSS ID25 = 100 V = 75 A = 20 mW RDS on Q-Class trr £ 200ns N-Channel Enhancement Mode Avalanche Rated, High dv/dt Low Gate Charge and Capacitances Preliminary data Symbol Test Conditions Maximum Ratings VDSS


    Original     		PDF 75N10Q 75N10Q 200ns O-247 O-268 O-268AA

    Untitled

    Abstract: No abstract text available
    Text: IXTH 75N15 IXTT 75N15 High Current Power MOSFET VDSS ID25 = 150 V = 75 A Ω = 23 mΩ RDS on N-Channel Enhancement Mode Symbol Test Conditions VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ 150 150 V V VGS VGSM Continuous Transient ±20


    Original     		PDF 75N15 O-247 405B2

    Untitled

    Abstract: No abstract text available
    Text: HiPerFETTM Power MOSFETs VDSS IXFH/IXFM 67 N10 IXFH/IXFM 75 N10 100 V 100 V Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 100 V VDGR TJ = 25°C to 150°C; RGS = 1 MW 100 V VGS Continuous ±20 V VGSM Transient ±30 V ID25 TC = 25°C 67N10 75N10


    Original     		PDF 67N10 75N10 75N10 O-247 O-204 100ms

    ixys ixdn 75 n 120

    Abstract: 75N120 IXDN75N120 160mJ
    Text: IXDN 75N120 High Voltage IGBT VCES = 1200 V = 150 A IC25 VCE sat typ = 2.2 V Short Circuit SOA Capability Square RBSOA C miniBLOC, SOT-227 B E153432 E G G E E E C Maximum Ratings E = Emitter ①, G = Gate, Symbol Conditions VCES TJ = 25°C to 150°C 1200


    Original     		PDF 75N120 OT-227 E153432 IXDN75N120 ixys ixdn 75 n 120 75N120 IXDN75N120 160mJ

    DSA003697

    Abstract: No abstract text available
    Text: MegaMOSTMFET VDSS IXTH / IXTM 67N10 IXTH / IXTM 75N10 IXTT 75N10 N-Channel Enhancement Mode ID25 RDS on 67 A 25 mΩ Ω Ω 75 A 20 mΩ 100 V 100 V TO-247 AD (IXTH) Symbol Test Conditions VDSS TJ = 25°C to 150°C 100 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ


    Original     		PDF 67N10 75N10 75N10 O-247 O-204 O-268 DSA003697

    IXTH75N15

    Abstract: 75N15
    Text: IXTH 75N15 IXTT 75N15 High Current Power MOSFET VDSS ID25 = 150 V = 75 A Ω = 23 mΩ RDS on N-Channel Enhancement Mode Symbol Test Conditions VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ 150 150 V V VGS VGSM Continuous Transient ±20


    Original     		PDF 75N15 O-247 405B2 IXTH75N15 75N15

    Untitled

    Abstract: No abstract text available
    Text: PolarHTTM Power MOSFET IXTA 75N10P IXTP 75N10P IXTQ 75N10P = = ≤ VDSS ID25 RDS on 100 V 75 A Ω 25 mΩ N-Channel Enhancement Mode Avalanche Rated TO-263 (IXTA) Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25° C to 175° C TJ = 25° C to 175° C; RGS = 1 MΩ


    Original     		PDF 75N10P O-263 O-220 75N10P

    75N120

    Abstract: No abstract text available
    Text: IXDN 75N120 High Voltage IGBT VCES = 1200 V IC25 = 150 A VCE sat typ = 2.2 V Short Circuit SOA Capability Square RBSOA C miniBLOC, SOT-227 B E153432 E G G E E E C Symbol Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 20 kW


    Original     		PDF 75N120 OT-227 E153432 IXDN75N120 75N120

    Untitled

    Abstract: No abstract text available
    Text: MegaMOSTMFET VDSS IXTH / IXTM 67N10 IXTH / IXTM 75N10 IXTT 75N10 N-Channel Enhancement Mode ID25 100 V 100 V RDS on 67 A 25 mΩ Ω Ω 75 A 20 mΩ TO-247 AD (IXTH) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 100 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ


    Original     		PDF 67N10 75N10 O-247 O-268 O-204

    Untitled

    Abstract: No abstract text available
    Text: ADVANCE TECHNICAL INFORMATION IXTC 75N10 MegaMOSTMFET N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 100 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 100 V VGS Continuous ±20 V VGSM Transient ±30 V ID25 TC = 25°C


    Original     		PDF 75N10 ISOPLUS220TM 728B1 123B1 728B1 065B1

    Untitled

    Abstract: No abstract text available
    Text: Advanced Technical Information IXFH 75N10Q IXFT 75N10Q HiPerFETTM Power MOSFETs VDSS ID25 = 100 V = 75 A = 20 mW RDS on Q-Class trr £ 200ns N-Channel Enhancement Mode Avalanche Rated, High dv/dt Low Gate Charge and Capacitances Symbol Test Conditions Maximum Ratings


    Original     		PDF 75N10Q 200ns O-247 O-268

    67N10

    Abstract: 75N10 123B16
    Text: MegaMOSTMFET VDSS IXTH / IXTM 67N10 IXTH / IXTM 75N10 IXTT 75N10 N-Channel Enhancement Mode ID25 RDS on 67 A 25 mΩ Ω Ω 75 A 20 mΩ 100 V 100 V TO-247 AD (IXTH) Symbol Test Conditions VDSS TJ = 25°C to 150°C 100 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ


    Original     		PDF 67N10 75N10 O-247 O-268 O-204 67N10 75N10 123B16

    75n15

    Abstract: No abstract text available
    Text: Advance Technical Information IXTH 75N15 IXTT 75N15 High Current Power MOSFET VDSS ID25 = 150 V = 75 A Ω = 23 mΩ RDS on N-Channel Enhancement Mode Symbol Test Conditions VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ 150 150 V V VGS


    Original     		PDF 75N15 75N15 O-247 O-268 O-268 728B1

    98938

    Abstract: No abstract text available
    Text: Advance Technical Information IXBN 75N170A VCES IC25 VCE sat tfi BIMOSFETTM Monolithic Bipolar MOS Transistor Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1700 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1700 V VGES Continuous ±20 V VGEM


    Original     		PDF 75N170A OT-227 E153432 728B1 98938

    transistor ixfh application note

    Abstract: 75N10 mosfet "AC Motor" 6206 A BY 268 V 75N10 D-68623
    Text: IXFH 67N10 IXFH 75N10 IXFM 67N10 IXFM 75N10 VDSS ID25 RDS on trr IXFH/FM 67N10 100 V 67 A 25 mΩ 200 ns IXFH/FM 75N10 100 V 75 A 20 mΩ 200 ns TM HiPerFET Power MOSFET N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family Symbol Test Conditions


    Original     		PDF 67N10 75N10 67N10 75N10 transistor ixfh application note 75N10 mosfet "AC Motor" 6206 A BY 268 V D-68623

    75n15

    Abstract: .75N15 IXTH75N15 MOSFET 450
    Text: IXTH 75N15 IXTQ 75N15 IXTT 75N15 High Current Power MOSFET VDSS ID25 = 150 V = 75 A Ω = 23 mΩ RDS on N-Channel Enhancement Mode Preliminary Data Sheet TO-247 AD (IXTH) Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ


    Original     		PDF 75N15 O-247 728B1 123B1 728B1 065B1 75n15 .75N15 IXTH75N15 MOSFET 450

    diode lt 247

    Abstract: No abstract text available
    Text: DIXYS HiPerFET Power MOSFETs IXFH 67N10 IXFH 75N10 VDSS ^D25 100 V 100 V 67 A 75 A V DSS Test Conditions ^ Maximum Ratings =25°C to150°C 100 V v DGR T j = 2 5 °C to 1 5 0 °C ; RGS=1 M£2 100 V Vos Continuous i2 0 V VGSM Transient d30 V ^ D25 Tc =25°C


    OCR Scan     		PDF 67N10 75N10 O-247 to150 diode lt 247

    75N120A

    Abstract: 75N120 IXDN75N120A 1TM4 MI1200 15i2 0504N
    Text: □ IXYS IXDN 75N120A High Voltage IGBT V CES 1200 V ^C25 120 A V CE sat typ 2.5 V Short Circuit SOA Capability Preliminary Data Maximum Ratings Symbol Test Conditions V CES ^ = 25°C to 150°C 1200 V V CGR ^ = 25°C to 150°C; RGE = 1 M£i 1200 V V GES Continuous


    OCR Scan     		PDF 75N120A OT-227 75N120 IXDN75N120A 1TM4 MI1200 15i2 0504N

    75N120

    Abstract: 0504N IXDN75N120A
    Text: □IXYS IXDN 75N120A High Voltage IGBT V CES ^C25 V CE sat typ 1200 V 120 A 2.5 V Short Circuit SOA Capability Preliminary Data Maximum Ratings Symbol Test Conditions VCES Tj = 25°C to 150°C 1200 V VCGR Tj = 25°C to 150°C; RGE = 1 M il 1200 V mini BLOC, SOT-227 B


    OCR Scan     		PDF 75N120A OT-227 75N120 0504N IXDN75N120A

    75N1

    Abstract: 6n80 IXTM20N60 IRFP 260 M ixfh K 15N60 42N20 ixtn 44N50 KS 4400 204 3B
    Text: HiPerF ET Power MOSFETs ?D g UE D f N-Channel Enhancement-Mode with Fast Intrinsic Diode Type V DSS max. ► New ► IXFH 76N07-11 ► IXFH 76N07-12 IXFH IXFH IXFH IXFH IXFH 67N10 75N10 42N20 50N20 58N20 V 70 100 200 IXFH 35N30 IXFH 40N30 300 IXFH IXFH


    OCR Scan     		PDF 76N07-11 76N07-12 67N10 75N10 42N20 50N20 58N20 O-247 O-204 75N1 6n80 IXTM20N60 IRFP 260 M ixfh K 15N60 ixtn 44N50 KS 4400 204 3B

    Untitled

    Abstract: No abstract text available
    Text: □IXYS IXFH 67N10 IXFH 75N10 IXFH/FM 67N10 IXFH/FM 75N10 HiPerFET Power MOSFET N-Channel Enhancement Mode High dv/dt, Low trr, HDMOS™ Family IXFM 67N10 IXFM 75N10 D VDSS ^D25 100 V 100V 67 A 75 A I DS on 25 mQ 200 ns 20 mfì 200 ns OD I G os Symbol


    OCR Scan     		PDF 67N10 75N10

    IXTN 36N50 C

    Abstract: ixys ixth 21N50 mosfet irfp 250 N c226 C278 C2100 13N110 C258 IRFP ixys ixtn 36n50
    Text: n ix Y S Standard UOSFET T-Series \ Contents v DSS max ^D^cont C= 25 °C TO-247 □ DS on) Tc = 25 °C TO-220 (IXTP) TO-263 (IXTA) TO-264 miniBLOC (DON) Page ♦ V A £i 100 67 75 0.025 0.02 IXTH 67N10 IXTH 75N10 C2-4 200 30 0.085 IRFP 250 C2-8 50 0.045 IXTH 50N20


    OCR Scan     		PDF O-247 O-220 O-263 O-264 67N10 75N10 50N20 79N20 35N30 40N30 IXTN 36N50 C ixys ixth 21N50 mosfet irfp 250 N c226 C278 C2100 13N110 C258 IRFP ixys ixtn 36n50

    Untitled

    Abstract: No abstract text available
    Text: !3 IX ^ Y "S Advanced Technical Information VDSS IXFH 75N10Q IXFT 75N10Q HiPerFET Power MOSFETs Q-Class = 100 V = 75 A = 20 mQ ^D25 D DS on trr < 200ns N-Channel Enhancement Mode Avalanche Rated, Highdv/dt Low Gate Charge and Capacitances Symbol TestConditions


    OCR Scan     		PDF 75N10Q 200ns -247A

    75n120

    Abstract: No abstract text available
    Text: □ IX Y S High Voltage IGBT IXDN 75N120 1200 V 150 A 2.2 V V CES v I C25 CE sat typ Short Circuit S O A Capability Square R B SO A miniBLOC, SOT-227 B TO Preliminary Data E153432 E Symbol Conditions VcES Tj = 25°C to 150°C 1200 V VcCR Tj = 25°C to 150°C; Rge = 20 kQ


    OCR Scan     		PDF 75N120 OT-227 E153432 D-68623 75n120