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    13N110 Search Results

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    13N110 Price and Stock

    IXYS Corporation IXTH13N110

    MOSFET N-CH 1100V 13A TO247
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    DigiKey IXTH13N110 Tube 30
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    Bristol Electronics IXTH13N110 50
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    JRH Electronics 311HJ013N1104

    CONN ADAPTER
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    DigiKey 311HJ013N1104 Bulk 1
    • 1 $1230.23
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    Glenair Inc 311HJ013N1104

    ADAPTER - Bulk (Alt: 311HJ013N1104)
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    Avnet Americas 311HJ013N1104 Bulk 3 Weeks 1
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    Mouser Electronics 311HJ013N1104
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    Newark 311HJ013N1104 Bulk 20 1
    • 1 $808.2
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    Interstate Connecting Components 311HJ013N1104
    • 1 $802.2495
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    Powell Electronics 311HJ013N1104 13 1
    • 1 $971.38
    • 10 $567.06
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    Microtherm Sentronic B13N11005L310100

    Thermal Cutoffs Bi-metallic Disc, Thermal Switch, Normally Closed (NC), SPST 110C switch temp.
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    Mouser Electronics B13N11005L310100
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    Microtherm Sentronic B13N11005L310100U112

    Thermal Cutoffs Bi-metallic Disc, Thermal Switch, Normally Closed (NC), SPST 110C switch temp.
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    Mouser Electronics B13N11005L310100U112
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    Find more 13N110 price and stock on Findchips.com

    13N110 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    13N110

    Abstract: No abstract text available
    Text: IXTH 13N110 VDSS MegaMOSTMFET ID25 RDS on = 1100 V = 13 A = 0.92 Ω N-Channel Enhancement Mode Preliminary data Symbol Test Conditions Maximum Ratings VDSS T J = 25°C to 150°C 1100 V VDGR T J = 25°C to 150°C; RGS = 1 MΩ 1100 V VGS Continuous ±20 V


    Original     		PDF 13N110 O-247

    Untitled

    Abstract: No abstract text available
    Text: IXTH 13N110 VDSS MegaMOSTMFET ID25 RDS on = 1100 V = 13 A = 0.92 Ω N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1100 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 1100 V VGS Continuous ±20 V VGSM Transient ±30


    Original     		PDF 13N110 O-247

    7n60b

    Abstract: 35N120u1 ixys dsei 45-12a DSDI 35-12A 20N80 80n06 80n60 VVY 40-16IO1 IXYS CS 2-12 IXFX 44N80
    Text: Alphanumerical Index A AXC-051 AXC-053 AXC-101 AXC-102 AXL-001 AXL-051 AXV-102 C CS 142-12io8 CS 142-16io8 CS 19-08ho1 CS 19-08ho1S CS 19-12ho1 CS 19-12ho1S CS 20-12io1 CS 20-14io1 CS 20-16io1 CS 23-08io2 CS 23-12io2 CS 23-16io2 CS 300-12io3 CS 300-16io3 CS 300-18io3


    Original     		PDF AXC-051 AXC-053 AXC-101 AXC-102 AXL-001 AXL-051 AXV-102 142-12io8 142-16io8 19-08ho1 7n60b 35N120u1 ixys dsei 45-12a DSDI 35-12A 20N80 80n06 80n60 VVY 40-16IO1 IXYS CS 2-12 IXFX 44N80

    MOSFET 11N80 Data sheet

    Abstract: MOSFET 11N80 6N80 IXTN 36N50 C 11n80 ixys ixtn 79n20 ixys ixtn 36n50 6n90 12n100 IRFP 640
    Text: Standard MOSFET T-Series MegaMOSTMFET Standard MOSFET T-Series Contents VDSS max TO-247 TO-220 IXTP TO-263 (IXTA) TO-264 miniBLOC (IXTN) ID(cont) TC = 25 °C A R DS(on) TC = 25 °C Ω 100 67 75 0.025 0.02 IXTH 67N10 IXTH 75N10 C2-4 200 30 0.085 IRFP 250


    Original     		PDF O-247 O-220 O-263 O-264 67N10 75N10 50N20 C2-10 C2-18 C2-20 MOSFET 11N80 Data sheet MOSFET 11N80 6N80 IXTN 36N50 C 11n80 ixys ixtn 79n20 ixys ixtn 36n50 6n90 12n100 IRFP 640

    Untitled

    Abstract: No abstract text available
    Text: □ IXYS IXTH 13N110 MegaMOS FET Vd s s D25 D DS on = 1100 V* = 13 A = 0.92 Q N-Channel Enhancement Mode éi Maximum Ratings Symbol TestC onditions V DSS Td = 25°C to 150°C 1100 V v DGR Td = 25°C to 150°C; RGS = 1 M£i 1100 V V GS Continuous ±20 V


    OCR Scan     		PDF 13N110 O-247

    75N1

    Abstract: 6n80 IXTM20N60 IRFP 260 M ixfh K 15N60 42N20 ixtn 44N50 KS 4400 204 3B
    Text: HiPerF ET Power MOSFETs ?D g UE D f N-Channel Enhancement-Mode with Fast Intrinsic Diode Type V DSS max. ► New ► IXFH 76N07-11 ► IXFH 76N07-12 IXFH IXFH IXFH IXFH IXFH 67N10 75N10 42N20 50N20 58N20 V 70 100 200 IXFH 35N30 IXFH 40N30 300 IXFH IXFH


    OCR Scan     		PDF 76N07-11 76N07-12 67N10 75N10 42N20 50N20 58N20 O-247 O-204 75N1 6n80 IXTM20N60 IRFP 260 M ixfh K 15N60 ixtn 44N50 KS 4400 204 3B

    40n80

    Abstract: 13NB0 60N60 dsei 20-12 33N120 VUO 35-12 N 0 7 DS117-12A DS117-12 26n60 4410PI
    Text: Alphanumerical Index c CS CS CS CS CS CS CS CS CS CS CS CS CS CS 142-12 ¡08 142-16 io8 23-08 ¡02 23-12 ¡02 23-16 ¡02 300-12 io3 300-16 io3 35-08 ¡04 35-12 ¡04 35-14 ¡04 72-12 ¡08 72-16 ¡08 8-08 ¡02 8-12 ¡02 18 18 18 18 18 18 18 18 18 18 18 18 18


    OCR Scan     		PDF 5-10A 52-14N01 52-16N01 55-12N 55-14N07 55-18N 60-08N 60-16N 62-08N 62-12N 40n80 13NB0 60N60 dsei 20-12 33N120 VUO 35-12 N 0 7 DS117-12A DS117-12 26n60 4410PI

    IXTN 36N50 C

    Abstract: ixys ixth 21N50 mosfet irfp 250 N c226 C278 C2100 13N110 C258 IRFP ixys ixtn 36n50
    Text: n ix Y S Standard UOSFET T-Series \ Contents v DSS max ^D^cont C= 25 °C TO-247 □ DS on) Tc = 25 °C TO-220 (IXTP) TO-263 (IXTA) TO-264 miniBLOC (DON) Page ♦ V A £i 100 67 75 0.025 0.02 IXTH 67N10 IXTH 75N10 C2-4 200 30 0.085 IRFP 250 C2-8 50 0.045 IXTH 50N20


    OCR Scan     		PDF O-247 O-220 O-263 O-264 67N10 75N10 50N20 79N20 35N30 40N30 IXTN 36N50 C ixys ixth 21N50 mosfet irfp 250 N c226 C278 C2100 13N110 C258 IRFP ixys ixtn 36n50

    IRFP 260 M

    Abstract: 5n100 6n80 42n20 12N50A IRFP IXTN 36N50 C 67N10 irfp 240
    Text: Standard Power MOSFETs and MegaMOS FETs N-Channel Enhancement-Mode Tjh = ► New IXTH IXTH IRFP IXTH IXTH IRFP IXTH IXTH IXTH IRFP IXTH IRFP IXTH ► IXTH IXTH IXTH ► IXTH ► IXTU ►IXTU IXTH IXTH IXTH IXTH IXTH IXTH IXTH IXTH IXTH IXTH IXTH IXTH IXTH


    OCR Scan     		PDF 67N10 75N10 42N20 50N20 35N30 40N30 12N50A 21N50 24N50 30N50 IRFP 260 M 5n100 6n80 IRFP IXTN 36N50 C irfp 240

    IRFP 640

    Abstract: IRFP 260 M 6N80A 0 280 130 023 IRFP 24n50 5N10 IXTM20N60 6N90A 01N100
    Text: Standard Power MOSFETs and MegaMOSmFETs T series Standard types t jm = ► New 150°c V T c = 25°C A R c es DS on Tc = 25°C Q tr typ. 25aC ns Qfl ^ th J C Po max. max. nC K/W W 260 0.42 300 6 180 285 360 400 140 220 0.65 0.42 190 300 150 280 370 370 140


    OCR Scan     		PDF 135XTP 01N100 1N100 2N100 2N100 100X2 01N100X3 O-251, O-220AB IRFP 640 IRFP 260 M 6N80A 0 280 130 023 IRFP 24n50 5N10 IXTM20N60 6N90A 01N100

    11n80

    Abstract: ixys ixth 21N50 C2100 G264 2N100 ixth75n10 74N20 C2104 C294 13n80
    Text: Contents D V OSS max Tc = 2 5 “C Tc = 2 5 °C V A Q 100 67 75 0.025 0.02 IXTH 67N10 IXTH 75N10 200 30 0.085 IRFP 250 42 50 0.06 0.045 IXTH 42N20 IXTH 50N20 74 0.035 IXTH 68N20 85 0.025 23 0.14 IRFP 254 C2-20 38 0.075 IRFP 264 C2-22 35 40 0.1 0.085 0.088


    OCR Scan     		PDF O-247 O-251 O-204 O-264 15N60 20N60 15N70 01N80* 35N30 40N30 11n80 ixys ixth 21N50 C2100 G264 2N100 ixth75n10 74N20 C2104 C294 13n80

    8n80

    Abstract: DS117-12A 36-18N 16go 20N60A 2QN60 62-16N07 DSA117-12 10N60A MCC95-12io1B
    Text: Alphanumerical Index c CS 142-12 io8 CS 142-16 ¡08 CS 23-08 io2 CS 23-12 ¡02 CS 23-16 io2 3S 300-12 io3 2S 300-16 io3 CS 35-08 io4 CS 35-12 io4 CS 35-14 io4 CS 72-12 ¡08 CS 72-16 ¡08 CS 8-08 io2 CS 8-12 io2 CS 8-12 io2 CS1011 -18io1 CS1011-22io1 CS1011-25io1


    OCR Scan     		PDF CS1011 -18io1 CS1011-22io1 CS1011-25io1 CS1250-12io1 CS1250-14io1 CS1250-16io1 CS20-12 CS20-14 CS20-16 8n80 DS117-12A 36-18N 16go 20N60A 2QN60 62-16N07 DSA117-12 10N60A MCC95-12io1B

    6N80

    Abstract: IXTN 36N50 C 40N160 40N140 ixtn 79n20 30N45 irfp 240 IXTK33N50 IXTN21N100 IRFP
    Text: Standard Power MOSFETs and MegaMOS FETs N-Channel Enhancement-Mode t jm = 150°c ► New V p >D25 Tc = 25°C A DS on Tc = 25°C a 200 30 42 50 IRFP 254 250 ► IRFP 264 thJC K/W W 300 4 180 360 140 0.65 190 4600 285 400 220 0.42 300 360 max. max. max. 68


    OCR Scan     		PDF 67N10 75N10 42N20 50N20 68N20 35N30 40N30 30N45 12N50A 21N50 6N80 IXTN 36N50 C 40N160 40N140 ixtn 79n20 irfp 240 IXTK33N50 IXTN21N100 IRFP

    mm036

    Abstract: ml075-12 MM036-12 mm036-16 mm075-12io1 mm062 DSI 12-06A MDD95-16N1B ME03 21N100
    Text: 17 17 17 17 17 17 17 17 17 17 17 17 17 17 13 15 15 13 13 13 13 14 14 14 14 13 13 13 13 13 15 15 15 13 13 13 13 13 13 14 14 14 14 14 14 13 13 13 15 15 15 14 14 14 DSAI35-12A DSAI 35-16A DSAI 35-18A DSAI 75-12A DSAI 75-16A DSAI 75-18A DSEI 12-06A DSEI 12-1OA


    OCR Scan     		PDF DSAI35-12A 5-16A 5-18A 5-12A 2-06A 12-1OA 2-12A 2x30-Q4C mm036 ml075-12 MM036-12 mm036-16 mm075-12io1 mm062 DSI 12-06A MDD95-16N1B ME03 21N100