80n60
Abstract: 80N60B ixsk 80n60b
Text: High Current IGBT IXSK 80N60B VCES = 600 V IXSX 80N60B IC25 = 180 A Short Circuit SOA Capability VCE sat = 2.2 V Preliminary data Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MW 600 600 V V VCES VGEM
|
Original
|
80N60B
247TM
PLUS247TM
80n60
ixsk 80n60b
|
PDF
|
80n60
Abstract: 80N60B
Text: High Current IGBT Short Circuit SOA Capability IXSK 80N60B IXSX 80N60B VCES IC25 = 600 V = 160 A = 2.5 V VCE sat Symbol Test Conditions VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ 600 600 V V VCES VGEM Continuous Transient ±20 ±30
|
Original
|
80N60B
247TM
728B1
80n60
80N60B
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Advanced Technical Information High Current IGBT Short Circuit SOA Capability IXSK 80N60B IXSX 80N60B VCES IC25 = 600 V = 180 A = 2.5 V VCE sat Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MW 600 600
|
Original
|
80N60B
|
PDF
|
Untitled
Abstract: No abstract text available
Text: High Current IGBT Short Circuit SOA Capability IXSK 80N60B IXSX 80N60B VCES IC25 = 600 V = 160 A = 2.5 V VCE sat Symbol Test Conditions VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ 600 600 V V VCES VGEM Continuous Transient ±20 ±30
|
Original
|
80N60B
247TM
728B1
|
PDF
|
80n60
Abstract: O M 335 80N60B PF650
Text: Advance Technical Information IGBT with Diode IXSN 80N60BD1 Short Circuit SOA Capability VCES IC25 VCE sat = 600 V = 160 A = 2.5 V C G E E Symbol Test Conditions Maximum Ratings V CES TJ = 25°C to 150°C 600 V CGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 A
|
Original
|
80N60BD1
OT-227
728B1
80n60
O M 335
80N60B
PF650
|
PDF
|
80n60
Abstract: 80N60BD1 2X6-10 IXSN80N60BD1 2X61-06A
Text: IGBT with Diode Short Circuit SOA Capability IXSN 80N60BD1 VCES IC25 VCE sat tfi = = = = 600 V 160 A 2.5 V 180 ns C G Preliminary Data Sheet E E Symbol Test Conditions Maximum Ratings V CES TJ = 25°C to 150°C 600 V CGR TJ = 25°C to 150°C; RGE = 1 MΩ
|
Original
|
80N60BD1
2x61-06A
065B1
728B1
123B1
728B1
80n60
2X6-10
IXSN80N60BD1
2X61-06A
|
PDF
|
80n60
Abstract: Siemens DIODE E 1240 80N60B 60-06A 6006A
Text: IGBT with Diode Short Circuit SOA Capability IXSN 80N60BD1 VCES IC25 VCE sat tfi = = = = 600 V 160 A 2.5 V 180 ns C G Preliminary Data Sheet E E Symbol Test Conditions Maximum Ratings V CES TJ = 25°C to 150°C 600 V CGR TJ = 25°C to 150°C; RGE = 1 MΩ
|
Original
|
80N60BD1
0-06A
728B1
123B1
728B1
065B1
80n60
Siemens DIODE E 1240
80N60B
60-06A
6006A
|
PDF
|
Untitled
Abstract: No abstract text available
Text: IGBT with Diode IXSN 80N60AU1 VCES IC25 VCE sat = 600 V = 160 A = 3V Short Circuit SOA Capability C G E Symbol Test Conditions VCES TJ = 25°C to 150°C E Maximum Ratings 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 600 A VGES Continuous ±20 V VGEM Transient
|
Original
|
80N60AU1
OT-227
E153432
|
PDF
|
Siemens DIODE E 1240
Abstract: No abstract text available
Text: IGBT with Diode Short Circuit SOA Capability IXSN 80N60BD1 VCES IC25 VCE sat tfi = = = = 600 V 160 A 2.5 V 180 ns C G Preliminary Data Sheet E E Symbol Test Conditions Maximum Ratings V CES TJ = 25°C to 150°C 600 V CGR TJ = 25°C to 150°C; RGE = 1 MΩ
|
Original
|
80N60BD1
0-06A
728B1
123B1
065B1
Siemens DIODE E 1240
|
PDF
|
IXGN80n60
Abstract: IF110 high current igbt SOT227B IXGN80N60A2 123B16
Text: Advanced Technical Data IXGN 80N60A2 IXGN 80N60A2D1 IGBT Optimized for Switching up to 5 kHz E Symbol Test Conditions VCES TJ = 25°C to 150°C 600 VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V V VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C
|
Original
|
80N60A2
80N60A2D1
IC110
IF110
OT-227B,
E153432
IXGN80N60A2D1
065B1
728B1
123B1
IXGN80n60
IF110
high current igbt
SOT227B
IXGN80N60A2
123B16
|
PDF
|
Untitled
Abstract: No abstract text available
Text: High Current IGBT IXSK 80N60B VCES = 600 V IXSX 80N60B IC25 = 180 A Short Circuit SOA Capability VCE sat = 2.3 V Preliminary data Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MW 600 600 V V VCES VGEM
|
Original
|
80N60B
247TM
PLUS247TM
|
PDF
|
80n60
Abstract: IXSN80N60AU1
Text: IGBT with Diode IXSN 80N60AU1 VCES IC25 VCE sat = 600 V = 160 A = 3V Short Circuit SOA Capability C G E Symbol Test Conditions VCES TJ = 25°C to 150°C E Maximum Ratings 600 TJ = 25°C to 150°C; RGE = 1 MW 600 A VGES Continuous ±20 V VGEM Transient ±30
|
Original
|
80N60AU1
OT-227
E153432
80n60
IXSN80N60AU1
|
PDF
|
Untitled
Abstract: No abstract text available
Text: IXSN 80N60BD1 Symbol Test Conditions g fs IC = 60 A; VCE = 10 V, Note1 Characteristic Values TJ = 25°C, unless otherwise specified min. typ. max. 40 52 S 6600 pF 660 pF C res 196 pF Qg 240 nC 85 nC 90 nC Inductive load, TJ = 25°°C 60 ns IC = IC90, VGE = 15 V, L = 100 µH,
|
Original
|
80N60BD1
OT-227
728B1
|
PDF
|
Untitled
Abstract: No abstract text available
Text: IGBT with Diode Short Circuit SOA Capability IXSN 80N60BD1 VCES IC25 VCE sat tfi = = = = 600 V 160 A 2.5 V 180 ns C G Preliminary Data Sheet E Symbol Test Conditions V CES TJ = 25°C to 150°C E Maximum Ratings 600 miniBLOC, SOT-227 B E153432 E V G V CGR
|
Original
|
80N60BD1
OT-227
E153432
2x61-06A
065B1
728B1
123B1
728B1
|
PDF
|
|
|
diode lt 429
Abstract: 7V03 lts 542
Text: nixYS IXSN 80N60AU1 IGBT with Diode VC ES IC25 vY CE sat Combi Pack = 600 V = 160 A = 3V Short Circuit SOA Capability Preliminary data Maximum Ratings Symbol T est Conditions v CES ^ = 25°C to 150°C 600 V v CGR T j = 25°C to 150°C; RGE = 1 M ii 600 A
|
OCR Scan
|
80N60AU1
OT-227
E153432
diode lt 429
7V03
lts 542
|
PDF
|
dc servo igbt
Abstract: No abstract text available
Text: n i x Y S IGBT with Diode IXSN 80N60AU1 VCES I C25 vv CE sat 600 V 160 A 3V Short Circuit SOA Capability Preliminary data Symbol Maximum Ratings Test Conditions v CES T j = 25° C to 150° C 600 V vt c g r T j = 25° C to 150° C; RG6 = 1 M£2 600 A V G ES
|
OCR Scan
|
80N60AU1
OT-227
E153432
dc servo igbt
|
PDF
|
Untitled
Abstract: No abstract text available
Text: : IXYS Prelim inary Data IXSN 80N60A High Current IGBT V ces = ^C25 = 600 V 160 A 3 V ^ C E s a t = Short Circuit SOA Capability Symbol Test Conditions Maximum Ratings VCES Tj = 25 °C to 150°C 600 V v CGR Tj = 25°C to 150°C; RGE= 1 600 A v GES Continuous
|
OCR Scan
|
80N60A
|
PDF
|
80N60A
Abstract: No abstract text available
Text: IXGK 80N60A vCES HiPerFAST IGBT ^C25 v* CE sat t,; 600 V 80 A 2.7 V 275 ns Preliminary data Symbol v ces V Co „ Maximum Ratings Test Conditions T, = 25°C to 150°C 600 V Tj = 25°C to 150°C; RQE = 1 MS2 600 V Continuous ±20 V v*G E M T ransient ±30
|
OCR Scan
|
80N60A
O-264
|
PDF
|
Untitled
Abstract: No abstract text available
Text: nixYS IGBT with Diode IXSN 80N60AU1 V CES = 600 V I = 160 A = 3 V C25 v CE sat Combi Pack Short Circuit SOA Capability Preliminary data Symbol Test Conditions v CES Td = 25°C to 150°C 600 V V CGH Tj = 25°C to 150°C; RGE = 1 M n 600 A V GES Continuous
|
OCR Scan
|
80N60AU1
OT-227
E153432
4bflb22b
|
PDF
|
80N60AU1
Abstract: IXYS IGBT
Text: IXYS IGBT with Diode IXSN 80N60AU1 v CES ^C25 v CE sat = 600 V = 160 A = 3V oC Short Circuit SO A Capability G P relim inary data 04E Symbol Test Conditions V CES Tj - 25°C to 150°C 600 V v*C G R v GES v GEM Tj = 25CC to 150°C; RGE = 1 M ii 600 A Maximum Ratings
|
OCR Scan
|
80N60AU1
OT-227
E153432
80N60AU1
IXYS IGBT
|
PDF
|
80N60A
Abstract: No abstract text available
Text: n ix Y S IXSN 80N60A High Current IGBT VCES IC25 vw CE sat 600 V 160 A 3V Short Circuit SOA Capability Preliminary Data Symbol Test C onditions v’ c e s T j =25°C to150°C 600 V VC0R Tj = 25° C to 150° C; RG6 = 1 Mi2 600 A v GES Continuous ±20 V VGEM
|
OCR Scan
|
80N60A
to150
OT-227B,
|
PDF
|
1xys
Abstract: E153432 80N60A 80n60
Text: High Current IGBT 600 V 160 A 3V IXSN 80N60A YCES IC25 VCE sat Short Circuit SO A Capability Preliminary Data Symbol Test Conditions v CES v CGR Tj = 25°C to 150°C 600 V 1, = 25°C to 150°C; RGE = 1 M n 600 A Maximum Ratings v GES v GEM Continuous ±20
|
OCR Scan
|
80N60A
OT-227B,
80N60AU1
1xys
E153432
80n60
|
PDF
|
B1116
Abstract: b1104 16N60 N60A B1118 10N120 B1102 B1126 24n60 35N120U1
Text: PIXYS SCSOAIGBTS-Series Contents IGBT •J v CES •> max < Tc = 25 °C V TO-220 IXSP TO-263 (IXSA) TO-247(IXSH) TO-2680XST) miniBLOC (IXSN) Page j? > > IXSA 16N60 IXSP 16N60 1.8 1.8 48 50 75 * 2.2 2.5 2.5 IXSH 24N60 IXSH 30N60 IXSH 40N60 B1-12 B1-20 B1-40
|
OCR Scan
|
O-220
O-263
O-247
O-2680XST)
16N60
24N60
30N60
40N60
25N100
B1116
b1104
N60A
B1118
10N120
B1102
B1126
35N120U1
|
PDF
|
7N60B
Abstract: 65A3 40N60A 60N60 IXGA 12N60C 200n60 ixgh 1500 30N30 IXG IGBT ixgh
Text: Insulated Gate Bipolar Transistors IGBT G series (high gain, high speed) v CE{Mt) Type T „ = 25°C A = 150°C New t jm > > IXGH 28N30 > 56 60 60_ IXGH 30N30 > IXGH 4QN30 > IXGH 31N60 IXGH IXGH IXGH > IXGN IXGN > IX G A 12N100 IXGH 12N100 IXGP 12N100 28
|
OCR Scan
|
30N30
28N30
4QN30
31N60
38N60
41N60
60N60
200N60
25N100A
7N60B
65A3
40N60A
IXGA 12N60C
200n60
ixgh 1500
IXG IGBT
ixgh
|
PDF
|
