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    Picker Components PCH-IF-110

    HEAT SINK 80X100X110MM
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    DigiKey PCH-IF-110 Box 14 1
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    Schurter Electronic Components IF-11-0141

    II1 PULSE TRANSFORMER THT SPEZ
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    CEC Industries Ltd I-F-11.0592M-20-1030-2070-60

    XTAL 11.0592M 20PF 10PPM 60 -20~
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    DigiKey I-F-11.0592M-20-1030-2070-60 Reel 10
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    BlockMaster Blocks CIF11005

    Pb 11P 5.08Mm Green |Blockmaster Electronics CIF11005
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    Newark CIF11005 Bulk 600 400
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    NAC CIF11005 400
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    BlockMaster Blocks CIF11007

    Pb 11P 7.62Mm Green Rohs Compliant: Yes |Blockmaster Electronics CIF11007
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    Newark CIF11007 Bulk 200
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    NAC CIF11007 200
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    IF110 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    SAW Filter

    Abstract: IF SAW Filter
    Text: Oscilent Corporation PRODUCT SPECIFICATION REV A January 2011 Oscilent Controlled Document Ordering Code / Part Number Product Description 821-IF110.0M-29A 110.0 MHz IF SAW Filter 29.66 MHz Bandwidth Specification Contents o Mechanical Dimensions o Test Circuit


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    821-IF110 0M-29A J-STD-020C 2002/95/EC 32MHz SAW Filter IF SAW Filter PDF

    SAW Filter

    Abstract: IF SAW Filter
    Text: Oscilent Corporation PRODUCT SPECIFICATION REV A January 2011 Oscilent Controlled Document Ordering Code / Part Number Product Description 813-IF110.8M-07A 110.8MHz IF SAW Filter 7.70MHz Bandwidth Specification Contents o Mechanical Dimensions o Test Circuit


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    813-IF110 8M-07A 70MHz J-STD-020C 2002/95/EC 252ication SAW Filter IF SAW Filter PDF

    SAW Filter

    Abstract: IF SAW Filter
    Text: Oscilent Corporation PRODUCT SPECIFICATION REV A January 2011 Oscilent Controlled Document Ordering Code / Part Number Product Description 813-IF110.0M-02A 110MHz IF SAW Filter 2.18MHz Bandwidth Specification Contents o Mechanical Dimensions o Test Circuit


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    813-IF110 0M-02A 110MHz 18MHz J-STD-020C 2002/95/EC SAW Filter IF SAW Filter PDF

    SAW Filter

    Abstract: IF SAW Filter
    Text: Oscilent Corporation PRODUCT SPECIFICATION REV A January 2011 Oscilent Controlled Document Ordering Code / Part Number Product Description 813-IF110.0M-20C 110.1 MHz IF SAW Filter 20.35 MHz Bandwidth Specification Contents o Mechanical Dimensions o Test Circuit


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    813-IF110 0M-20C J-STD-020C 2002/95/EC 65MHz SAW Filter IF SAW Filter PDF

    SAW Filter

    Abstract: IF SAW Filter
    Text: Oscilent Corporation PRODUCT SPECIFICATION REV A January 2011 Oscilent Controlled Document Ordering Code / Part Number Product Description 821-IF110.0M-20B 110.0 MHz IF SAW Filter 20.27 MHz Bandwidth Specification Contents o Mechanical Dimensions o Test Circuit


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    821-IF110 0M-20B J-STD-020C 2002/95/EC 75MHz SAW Filter IF SAW Filter PDF

    SAW Filter

    Abstract: IF SAW Filter
    Text: Oscilent Corporation PRODUCT SPECIFICATION REV A January 2011 Oscilent Controlled Document Ordering Code / Part Number Product Description 813-IF110.0M-04A 110MHz IF SAW Filter 4.82MHz Bandwidth Specification Contents o Mechanical Dimensions o Test Circuit


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    813-IF110 0M-04A 110MHz 82MHz J-STD-020C 2002/95/EC SAW Filter IF SAW Filter PDF

    SAW Filter

    Abstract: IF SAW Filter
    Text: Oscilent Corporation PRODUCT SPECIFICATION REV A January 2011 Oscilent Controlled Document Ordering Code / Part Number Product Description 821-IF110.43M-03A 110.43 MHz IF SAW Filter 3.90MHz Bandwidth Specification Contents o Mechanical Dimensions o Test Circuit


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    821-IF110 43M-03A 90MHz J-STD-020C 2002/95/EC SAW Filter IF SAW Filter PDF

    Diode smd s6 68

    Abstract: S4 42 DIODE smd diode g6 DIODE S4 39 smd diode DIODE marking S6 77 smd diode g6 smd diode S6 Diode smd s6 68 g1 S3 marking DIODE smd diode code 03a smd diode marking 77
    Text: GWM100-0085X1 Three phase full Bridge VDSS = 85 V = 103 A ID25 RDSon typ. = 5.5 mW with Trench MOSFETs in DCB isolated high current package L+ G1 S1 G3 G5 S3 S5 L1 L2 L3 G2 S2 G4 G6 S4 S6 Straight leads Surface Mount Device L- Applications MOSFETs Conditions


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    GWM100-0085X1 IF110 ID110 A0-0085X1 100-085X1-SL 100-085X1-SMD 100-0085X1 100-0085X1 Diode smd s6 68 S4 42 DIODE smd diode g6 DIODE S4 39 smd diode DIODE marking S6 77 smd diode g6 smd diode S6 Diode smd s6 68 g1 S3 marking DIODE smd diode code 03a smd diode marking 77 PDF

    SMD MARKING code L1

    Abstract: smd diode g6 DIODE S4 39 smd diode smd diode marking code L2 smd diode S6 DIODE smd marking l3 smd diode s4 smd diode code mj smd diode g5 SMD MARKING g5 SMD mosfet MARKING code TJ
    Text: GWM 180-004X2 Three phase full Bridge VDSS = 40 V = 180 A ID25 RDSon typ. = 1.9 mW with Trench MOSFETs in DCB isolated high current package L+ G1 S1 G3 G5 S3 S5 L1 L2 L3 G2 S2 G4 G6 S4 S6 Straight leads Surface Mount Device L- Applications MOSFETs Conditions


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    180-004X2 IF110 ID110 1004X2 180-004X2-SL 180-004X2-SMD 180-004X2 SMD MARKING code L1 smd diode g6 DIODE S4 39 smd diode smd diode marking code L2 smd diode S6 DIODE smd marking l3 smd diode s4 smd diode code mj smd diode g5 SMD MARKING g5 SMD mosfet MARKING code TJ PDF

    50904

    Abstract: No abstract text available
    Text: GMM 3x180-004X2 Three phase full Bridge VDSS = 40 V = 180 A ID25 RDSon typ. = 1.9 mW with Trench MOSFETs in DCB isolated high current package Preliminary data L1+ L2+ G1 G3 G5 S1 S3 S5 L1 L2 G4 G6 G2 S2 L3+ L3 S4 S6 L1- L2- L3- Applications MOSFETs Symbol


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    3x180-004X2 ID110 IF110 20100713a 50904 PDF

    IXGJ50N60C4D1

    Abstract: G50N60
    Text: Preliminary Technical Information High-Gain IGBT w/ Diode IXGJ50N60C4D1 VCES = 600V IC110 = 21A VCE sat ≤ 2.50V (Electrically Isolated Tab) High-Speed PT Trench IGBT ISO TO-247TM E153432 Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 150°C


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    IXGJ50N60C4D1 IC110 O-247TM E153432 IC110 IF110 50N60C4 0-06-11-A IXGJ50N60C4D1 G50N60 PDF

    QR30

    Abstract: No abstract text available
    Text: Advance Technical Information IXYH40N120C3D1 1200V XPTTM IGBT GenX3TM w/ Diode VCES IC90 VCE sat tfi(typ) High-Speed IGBT for 20-50 kHz Switching = = ≤ = 1200V 40A 4.0V 38ns TO-247 AD Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 150°C


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    IXYH40N120C3D1 O-247 IF110 062in. QR30 PDF

    IXGK50N60A2D1

    Abstract: No abstract text available
    Text: Advance Technical Data IGBT with Diode IXGK50N60A2D1 VCES IXGX 50N60A2D1 IC25 VCE sat = 600 V = 75 A = 1.4 V Low Saturation Voltage Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous


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    IXGK50N60A2D1 50N60A2D1 IC110 IF110 50N60B2D1 O-264 PLUS247 405B2 PDF

    30N60B3D

    Abstract: No abstract text available
    Text: IXXH30N60B3D1 XPTTM 600V IGBT GenX3TM w/ Diode VCES = IC110 = VCE sat  tfi(typ) = Extreme Light Punch Through IGBT for 5-30 kHz Switching 600V 30A 1.85V 125ns TO-247 AD Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 175°C TJ = 25°C to 175°C, RGE = 1M


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    IXXH30N60B3D1 IC110 125ns O-247 IF110 30N60B3D1 30N60B3D PDF

    IXXH50N60B3D1

    Abstract: No abstract text available
    Text: IXXH50N60B3D1 XPTTM 600V IGBT GenX3TM w/ Diode VCES = IC110 = VCE sat  tfi(typ) = Extreme Light Punch Through IGBT for 5-30kHz Switching 600V 50A 1.80V 135ns TO-247 Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 175°C TJ = 25°C to 175°C, RGE = 1M


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    IXXH50N60B3D1 IC110 5-30kHz 135ns O-247 IF110 IXXH50N60B3D1 PDF

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Technical Information GenX3TM 600V IGBT IXGN120N60A3 IXGN120N60A3D1 VCES = 600V IC110 = 120A VCE sat ≤ 1.35V Ultra-low Vsat PT IGBTs for up to 5kHz switching D1 E SOT-227B, miniBLOC E153432 Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C


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    IXGN120N60A3 IXGN120N60A3D1 IC110 OT-227B, E153432 IF110 2x61-06A PDF

    Untitled

    Abstract: No abstract text available
    Text: XPTTM 650V GenX4TM w/ Sonic Diode IXXN110N65B4H1 Extreme Light Punch Through IGBT for 10-30kHz Switching VCES = IC110 = VCE sat  tfi(typ) = 650V 110A 2.1V 85ns E SOT-227B, miniBLOC E153432 Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 175°C


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    IXXN110N65B4H1 10-30kHz IC110 OT-227B, E153432 IF110 110N65B4H1 02-04-13-B PDF

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Technical Information IXXH80N65B4H1 XPTTM 650V IGBT GenX4TM w/ Sonic Diode VCES IC110 VCE sat tfi(typ) Extreme Light Punch Through IGBT for 5-30 kHz Switching = = ≤ = 650V 80A 2.0V 63ns TO-247 AD Symbol Test Conditions Maximum Ratings VCES VCGR


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    IXXH80N65B4H1 IC110 O-247 IF110 80N65B4 2-01-13-A PDF

    Untitled

    Abstract: No abstract text available
    Text: Advance Technical Information IXYT30N65C3H1HV IXYH30N65C3H1 XPTTM 650V IGBT GenX3TM w/ Sonic Diode Extreme Light Punch Through IGBT for 20-60kHz Switching VCES = IC110 = VCE sat  tfi(typ) = 650V 30A 2.7V 24ns TO-268HV Symbol Test Conditions Maximum Ratings


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    IXYT30N65C3H1HV IXYH30N65C3H1 20-60kHz IC110 O-268HV IF110 30N65C3 PDF

    IXGP30N60B4D1

    Abstract: No abstract text available
    Text: Preliminary Technical Information High-Gain IGBT w/ Diode IXGP30N60B4D1 VCES = IC110 = VCE sat  tfi(typ) = High-Speed PT Trench IGBT 600V 30A 1.7V 88ns TO-220 Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1M


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    IXGP30N60B4D1 IC110 O-220 IF110 338B2 IXGP30N60B4D1 PDF

    Untitled

    Abstract: No abstract text available
    Text: Advance Technical Information IXYH24N90C3D1 900V XPTTM IGBT GenX3TM w/Diode VCES IC90 VCE sat tfi(typ) High-Speed IGBT for 20-50 kHz Switching Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ 900 900 V V VGES


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    IXYH24N90C3D1 IF110 O-247 24N90C3 PDF

    100n60

    Abstract: No abstract text available
    Text: Advance Technical Information IXXK100N60C3H1 XPTTM 600V GenX3TM w/ Diode VCES IC90 VCE sat tfi(typ) Extreme Light Punch Through IGBT for 20-60kHz Switching Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ 600


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    20-60kHz IXXK100N60C3H1 IF110 -55econds 100N60C3 0-10-A 100n60 PDF

    IXXN100N60B3H1

    Abstract: No abstract text available
    Text: Advance Technical Information IXXN100N60B3H1 XPTTM 600V GenX3TM w/ Diode VCES IC90 VCE sat tfi(typ) Extreme Light Punch Through IGBT for 10-30kHz Switching = = ≤ = 600V 100A 1.80V 150ns E SOT-227B, miniBLOC E153432 Symbol Test Conditions VCES VCGR TJ = 25°C to 150°C


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    10-30kHz IXXN100N60B3H1 150ns IF110 100N60B3 12-01-11-B IXXN100N60B3H1 PDF

    IXGR50N60B2D1

    Abstract: 50N60B2
    Text: HiPerFASTTM IGBT ISOPLUS247TM IXGR 50N60B2 IXGR 50N60B2D1 B2-Class High Speed IGBTs Electrically Isolated Back Surface VCES IC25 VCE(sat) tfi(typ) = 600 V = 68 A = 2.2 V = 65 ns Preliminary Data Sheet IXGR_B2 IXGR_B2D1 Symbol Test Conditions Maximum Ratings


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    ISOPLUS247TM 50N60B2 50N60B2D1 IC110 IF110 50N60B2D1 ISOPLUS247 2x61-06A 065B1 728B1 IXGR50N60B2D1 PDF