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onsemi HGTG10N120BND IGBT NPT 1200V 35A TO247-3
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DigiKey	HGTG10N120BND	Tube	11,031		1	1 $5.03 10 $5.03 100 $2.811 1000 $1.96522 10000 $1.84313	Buy Now
Newark	HGTG10N120BND	Bulk			450	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Rochester Electronics	HGTG10N120BND		981		1	1 $2.15 10 $2.15 100 $2.02 1000 $1.83 10000 $1.83	Buy Now
STMicroelectronics SCT10N120AG SICFET N-CH 1200V 12A HIP247
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DigiKey	SCT10N120AG	Tube	569		1	1 $6.44 10 $6.44 100 $4.125 1000 $4.125 10000 $4.125	Buy Now
Avnet Americas	SCT10N120AG	Tube		32 Weeks	600	1 - 10 - 100 - 1000 $4.17722 10000 $3.92857	Buy Now
Mouser Electronics	SCT10N120AG		520			1 $5.56 10 $5.56 100 $4.13 1000 $4.12 10000 $4.12	Buy Now
Newark	SCT10N120AG	Bulk			1	1 $7.58 10 $7.19 100 $6.61 1000 $6.61 10000 $6.61	Buy Now
STMicroelectronics	SCT10N120AG		520		1	1 $5.45 10 $5.45 100 $4.05 1000 $4.05 10000 $4.05	Buy Now

TME	SCT10N120AG				1	1 $11.45 10 $9.61 100 $8.97 1000 $8.97 10000 $8.97	Get Quote
Avnet Silica	SCT10N120AG			17 Weeks	30	1 - 10 - 100 - 1000 - 10000 -	Buy Now
EBV Elektronik	SCT10N120AG			33 Weeks	30	1 - 10 - 100 - 1000 - 10000 -	Buy Now
STMicroelectronics SCTWA10N120 IC POWER MOSFET 1200V HIP247
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DigiKey	SCTWA10N120	Tube	499		1	1 $11.62 10 $9.11 100 $11.62 1000 $7.44174 10000 $7.44174	Buy Now
Avnet Americas	SCTWA10N120	Bulk			600	1 - 10 - 100 - 1000 - 10000 -	Get Quote
STMicroelectronics	SCTWA10N120		10		1	1 $11.07 10 $8.93 100 $7.58 1000 $7.3 10000 $7.3	Buy Now
TME	SCTWA10N120				1	1 $12.5 10 $10.41 100 $9.37 1000 $8.12 10000 $7.87	Get Quote
Avnet Silica	SCTWA10N120			53 Weeks	30	1 - 10 - 100 - 1000 - 10000 -	Buy Now

Chip One Stop	SCTWA10N120	Bulk	113			1 $8.83 10 $7.28 100 $6.4 1000 $6.4 10000 $6.4	Buy Now
EBV Elektronik	SCTWA10N120			53 Weeks	30	1 - 10 - 100 - 1000 - 10000 -	Buy Now
STMicroelectronics SCT10N120 SICFET N-CH 1200V 12A HIP247
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DigiKey	SCT10N120	Tube	412		1	1 $8.99 10 $8.99 100 $5.271 1000 $4 10000 $4	Buy Now
Avnet Americas	SCT10N120	Bulk		32 Weeks	600	1 - 10 - 100 - 1000 $4.16 10000 $3.92	Buy Now
Mouser Electronics	SCT10N120		1,293			1 $7.09 10 $7.07 100 $4.29 1000 $4 10000 $4	Buy Now
Newark	SCT10N120	Bulk	328		1	1 $8.51 10 $7.41 100 $6.31 1000 $5.67 10000 $5.67	Buy Now
STMicroelectronics	SCT10N120		1,293		1	1 $6.95 10 $6.93 100 $4.2 1000 $3.92 10000 $3.92	Buy Now

TME	SCT10N120				1	1 $11.14 10 $9.3 100 $8.36 1000 $7.25 10000 $7.02	Get Quote
Avnet Silica	SCT10N120		120	17 Weeks	30	1 - 10 - 100 - 1000 - 10000 -	Buy Now
EBV Elektronik	SCT10N120		18,450	33 Weeks	30	1 - 10 - 100 - 1000 - 10000 -	Buy Now
IXYS Corporation IXYN110N120C4 IGBT 1200V 110A GEN4 XPT SOT227B
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IXYN110N120C4	Tube	296		1	1 $32.06 10 $24.483 100 $32.06 1000 $32.06 10000 $32.06	Buy Now
Mouser Electronics	IXYN110N120C4		268			1 $32.06 10 $24.48 100 $23.48 1000 $23.48 10000 $23.48	Buy Now
TTI	IXYN110N120C4	Tube			300	1 - 10 - 100 - 1000 $23.49 10000 $23.49	Buy Now

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10N120 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
10n120 Abstract: 25n120 IGBT DRIVER SCHEMATIC IC IGBT 25N120 gate driver igbt 10N120 25N120 IC IGBT 15N120 15N120 IC IGBT 25N120 600VIc 25A120 Text: MOTOROLA Order this document by 10N120/D SEMICONDUCTOR TECHNICAL DATA Hybrid Power Module 10N120 MHPM6B15N120 MHPM6B25N120 SERIES Integrated Power Stage for 460 VAC Motor Drives These modules integrate a 3–phase inverter in a single convenient package. They are designed for 2.0, 3.0, and 5.0 hp	Original	MHPM6B10N120/D MHPM6B10N120 MHPM6B15N120 MHPM6B25N120 10n120 25n120 IGBT DRIVER SCHEMATIC IC IGBT 25N120 gate driver igbt 10N120 25N120 IC IGBT 15N120 15N120 IC IGBT 25N120 600VIc 25A120	PDF
10N120BN Abstract: G10N120 10N120 TA49290 G10N120BN N-channel MOSFET 800v to-247 G10N G10N120b N-channel MOSFET to-247 HGT1S10N120BNS Text: 10N120BN, 10N120BN, 10N120BNS Data Sheet January 2000 35A, 1200V, NPT Series N-Channel IGBT Features The 10N120BN, 10N120BN and 10N120BNS are Non-Punch Through NPT IGBT designs. They are new members of the MOS gated high voltage switching IGBT family. IGBTs combine the best	Original	HGTG10N120BN, HGTP10N120BN, HGT1S10N120BNS HGTP10N120BN HGT1S10N120BNS 10N120BN G10N120 10N120 TA49290 G10N120BN N-channel MOSFET 800v to-247 G10N G10N120b N-channel MOSFET to-247	PDF
HGTG10N120BND Abstract: 10n120bnd mosfet 10N120bnd 10N120 TRANSISTOR 10N120BND 10N120BN TA49302 TA49189 10n120bnd datasheet ge 047 TRANSISTOR Text: 10N120BND Data Sheet December 2001 35A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The 10N120BND is a Non-Punch Through NPT IGBT design. This is a new member of the MOS gated high voltage switching IGBT family. IGBTs combine the best	Original	HGTG10N120BND HGTG10N120BND TA49290. TA49189. 140ns 150oC 10n120bnd mosfet 10N120bnd 10N120 TRANSISTOR 10N120BND 10N120BN TA49302 TA49189 10n120bnd datasheet ge 047 TRANSISTOR	PDF
7n60b Abstract: 35N120u1 ixys dsei 45-12a DSDI 35-12A 20N80 80n06 80n60 VVY 40-16IO1 IXYS CS 2-12 IXFX 44N80 Text: Alphanumerical Index A AXC-051 AXC-053 AXC-101 AXC-102 AXL-001 AXL-051 AXV-102 C CS 142-12io8 CS 142-16io8 CS 19-08ho1 CS 19-08ho1S CS 19-12ho1 CS 19-12ho1S CS 20-12io1 CS 20-14io1 CS 20-16io1 CS 23-08io2 CS 23-12io2 CS 23-16io2 CS 300-12io3 CS 300-16io3 CS 300-18io3	Original	AXC-051 AXC-053 AXC-101 AXC-102 AXL-001 AXL-051 AXV-102 142-12io8 142-16io8 19-08ho1 7n60b 35N120u1 ixys dsei 45-12a DSDI 35-12A 20N80 80n06 80n60 VVY 40-16IO1 IXYS CS 2-12 IXFX 44N80	PDF
65e9 transistor Abstract: transistor 75307D Transistor 65e8 SD MOSFET DRIVE DATASHEET 4468 8 PIN G40N60 RHR15120 equivalent 10n120bnd 76107d transistor 76121D emerson three phase dc motor driver service note Text: DUAL DIE POWER MOSFETs TM 1 1-888-INTERSIL or 321-724-7143 \| \| ID AMPS rDS ON VGE = 10V OHMS rDS(ON) VGE = 5V OHMS rDS(ON) VGE = 2.5V OHMS TYPE MS-012AA (SO-8) MO-153AA (TSSOP-8) 12 3.50 - 0.050 - Dual N RF1K49090 - 12 3.50 - 0.130 - Dual P RF1K49093 - 12	Original	1-888-INTERSIL MS-012AA MO-153AA RF1K49090 RF1K49093 RF1K49092 ITF87056DQT ITF87072DK8T ITF87008DQT RF1K49223 65e9 transistor transistor 75307D Transistor 65e8 SD MOSFET DRIVE DATASHEET 4468 8 PIN G40N60 RHR15120 equivalent 10n120bnd 76107d transistor 76121D emerson three phase dc motor driver service note	PDF
40n60 igbt Abstract: 35N120u1 B1116 equivalent for 30n60 40n60 equivalent 30n60 equivalent 30n60 to-220 ixsn 35N120U1 igbt equivalent to 40n60 80n60 Text: SCSOA IGBT S-Series / D-Series Insulated Gate Bipolar Transistors IGBT IGBT with Fast Diode Short Circuit Current Rated SCSOA IGBT S-Series Contents IGBT VCES max V High Speed Low VCE(sat) 600 IC VCE(sat) max TC = 25 °C TC = 25 °C A V TO-220 (IXSP) TO-263	Original	O-220 O-263 O-247 16N60 B1-10 24N60 30N60 40N60 40n60 igbt 35N120u1 B1116 equivalent for 30n60 40n60 equivalent 30n60 equivalent 30n60 to-220 ixsn 35N120U1 igbt equivalent to 40n60 80n60	PDF
10n120bnd Abstract: mosfet 10N120bnd 10N120 TRANSISTOR 10N120BND emerson 10n120bnd TA49290 12V 200A Relay HGTG10N120BND LD26 TA49189 Text: 10N120BND Data Sheet January 2000 35A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The 10N120BND is a Non-Punch Through NPT IGBT design. This is a new member of the MOS gated high voltage switching IGBT family. IGBTs combine the best	Original	HGTG10N120BND HGTG10N120BND TA49290. TA49189. 140ns 150oC 10n120bnd mosfet 10N120bnd 10N120 TRANSISTOR 10N120BND emerson 10n120bnd TA49290 12V 200A Relay LD26 TA49189	PDF
15n120 Abstract: IC IGBT 15N120 10n120 25n120 IGBT DRIVER SCHEMATIC 25N120 igbt 10N120 motorola 422-9 IC IGBT 25N120 Q1/LT 9249 APPLICATION NOTE OF 15N120 Text: MOTOROLA Order this document by 10N120/D SEMICONDUCTOR TECHNICAL DATA Hybrid Power Module 10N120 MHPM6B15N120 MHPM6B25N120 SERIES Integrated Power Stage for 460 VAC Motor Drives These E–POWER modules integrate a 3–phase inverter in a single convenient package. They are designed for 2.0, 3.0, and 5.0	Original	MHPM6B10N120/D MHPM6B10N120 MHPM6B15N120 MHPM6B25N120 15n120 IC IGBT 15N120 10n120 25n120 IGBT DRIVER SCHEMATIC 25N120 igbt 10N120 motorola 422-9 IC IGBT 25N120 Q1/LT 9249 APPLICATION NOTE OF 15N120	PDF
10N120BN Abstract: G10N120BN 35A, 1200V, NPT Series N-Channel IGBT spice model TA49290 HGTG10N120BN HGTP10N120BN TB334 HGT1S10N120BNS HGT1S10N120BNS9A 10n120 Text: 10N120BN, 10N120BN, 10N120BNS Data Sheet December 2001 35A, 1200V, NPT Series N-Channel IGBT Features The 10N120BN, 10N120BN and 10N120BNS are Non-Punch Through NPT IGBT designs. They are new members of the MOS gated high voltage switching IGBT family. IGBTs combine the best	Original	HGTG10N120BN, HGTP10N120BN, HGT1S10N120BNS HGTP10N120BN HGT1S10N120BNS 10N120BN G10N120BN 35A, 1200V, NPT Series N-Channel IGBT spice model TA49290 HGTG10N120BN TB334 HGT1S10N120BNS9A 10n120	PDF
10n120bnd Abstract: 10N120 mosfet 10N120bnd 10n120bnd datasheet TA49290 HGTG10N120BND TA49290 diode TA49302 TRANSISTOR 10N120BND ge 047 TRANSISTOR Text: 10N120BND Data Sheet January 2000 35A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The 10N120BND is a Non-Punch Through NPT IGBT design. This is a new member of the MOS gated high voltage switching IGBT family. IGBTs combine the best	Original	HGTG10N120BND HGTG10N120BND TA49290. TA49189. 140ns 150oC 10n120bnd 10N120 mosfet 10N120bnd 10n120bnd datasheet TA49290 TA49290 diode TA49302 TRANSISTOR 10N120BND ge 047 TRANSISTOR	PDF
G10N120b Abstract: 10N120 G10N120 Text: 10N120BN, 10N120BN, 10N120BNS Data Sheet August 2002 35A, 1200V, NPT Series N-Channel IGBT Features The 10N120BN, 10N120BN and 10N120BNS are Non-Punch Through NPT IGBT designs. They are new members of the MOS gated high voltage switching IGBT family. IGBTs combine the best	Original	HGTG10N120BN, HGTP10N120BN, HGT1S10N120BNS HGTP10N120BN HGT1S10N120BNS G10N120b 10N120 G10N120	PDF
10N120BND Abstract: No abstract text available Text: 10N120BND Data Sheet December 2001 35A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The 10N120BND is a Non-Punch Through NPT IGBT design. This is a new member of the MOS gated high voltage switching IGBT family. IGBTs combine the best	Original	HGTG10N120BND HGTG10N120BND TA49290. TA49189. 140ns 150oC 10N120BND	PDF
Untitled Abstract: No abstract text available Text: IGBT with Diode IXSH 10N120AU1 SCSOA Capability Sym bol T e st C o n d itio n s v CES v CGR T = 25oCto150°C TJ = 25°C to 150°C; RGE= 1 MQ v v GEM Continuous T ransient ^C25 ^C90 *CM Tc = 25°C Tc = 90°C Tc = 25°C, 1 ms SSOA RBSOA VGE = 15 V, Tj= 125°C, Hg= 150 O	OCR Scan	10N120AU1 O-247 25oCto150 -100/ps;	PDF
10N120AU1 Abstract: 10n120 Text: PIXYS IGBT with Diode IXSH 10N120AU1 U = 2 0 A VCES = 1200 V VCE sa„ = 4.0 V Short Circuit SOA Capability Symbol Test C onditions VCES V *C G R ^ = 25°C to 150°C T,J = 25°C to 150°C; FL.= 1 Mi2 C3E v v GEH Continuous T ransient ^C90 'c Tc = 25°C Tc = 90°C	OCR Scan	10N120AU1 -100/ps; 00A/MS 10N120AU1 10n120	PDF

10N120BN Abstract: No abstract text available Text: 10N120BN, 10N120BN, 10N120BNS Semiconductor Data Sheet January 1999 35A, 1200V, NPT Series N-Channel IGBT Features The 10N120BN, 10N120BN and 10N120BNS are Non-Punch Through NPT IGBT designs. They are new members of the MOS gated high	OCR Scan	HGTG10N120BN, HGTP10N120BN, HGT1S10N120BNS HGTP10N120BN HGT1S10N120BNS O-263AB 10N120BN, 10N120BN	PDF
EATON CM20A Abstract: A5 GNE mosfet Hall sensor 44e 402 2N8491 FTG 1087 S TRIAC BCR 10km FEB3T smd transistor marking 352a sharp EIA 577 sharp color tv schematic diagram MP-130 M mh-ce 10268 Text: Table of Contents N E W A R K E L E C T R O N IC S “Where serving you begins even before you call” Newark Electronics is a UNIQUE broadline distributor of electronic components, dedicated to provid ing complete service, fast delivery and in-depth inventory. Our main	OCR Scan		PDF
B1116 Abstract: b1104 16N60 N60A B1118 10N120 B1102 B1126 24n60 35N120U1 Text: PIXYS SCSOAIGBTS-Series Contents IGBT •J v CES •> max < Tc = 25 °C V TO-220 IXSP TO-263 (IXSA) TO-247(IXSH) TO-2680XST) miniBLOC (IXSN) Page j? > > IXSA 16N60 IXSP 16N60 1.8 1.8 48 50 75 * 2.2 2.5 2.5 IXSH 24N60 IXSH 30N60 IXSH 40N60 B1-12 B1-20 B1-40	OCR Scan	O-220 O-263 O-247 O-2680XST) 16N60 24N60 30N60 40N60 25N100 B1116 b1104 N60A B1118 10N120 B1102 B1126 35N120U1	PDF
10N120BN Abstract: G10N120BN ta49290 T0263AB Text: 10N120BN, 10N120BN, 10N120BNS S em iconductor January 1999 Data Sheet 35A, 1200V, NPT Series N-Channel IGBT Features The 10N120BN, 10N120BN and 10N120BNS are Non-Punch Through NPT IGBT designs. They are new members of the MOS gated high	OCR Scan	HGTG10N120BN, HGTP10N120BN, HGT1S10N120BNS HGTP10N120BN HGT1S10N120BNS O-263AB 10N120BN, 10N120BN G10N120BN ta49290 T0263AB	PDF
Untitled Abstract: No abstract text available Text: IGBT 10N120A IC25 v C ES V CE sat SCSO A Capability Maximum Ratings Symbol Test Conditions VCES VcO R Tj = 25“C to 150°C Tj = 25°C to 150°C; R aE = 1 MQ V v GEM Continuous Transient 'e» T c = 25°C T c = 90°C Tc = 25“C, 1 ms SSOA (RBSOA) V GE = 15 V, Tj= 125°C, Rq = 150 i l	OCR Scan	IXSH10N120A O-247	PDF
10N120BND Abstract: mosfet 10N120bnd TRANSISTOR 10N120BND IC IGBT 10N120BND 10n120bnd equivalent TA49290 diode TA49290 ta49302 SEM 238 Text: 10N120BND Semiconductor D a ta S h e e t J a n u a ry 1999 35A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The 10N120BND is a Non-Punch Ih ro u g h IGBT design. This is a new mem ber of the MOS gated high voltage switching IGBT family. IGBTs com bine the best	OCR Scan	HGTG10N120BND HGTG10N120BND TA49290. TA49189. 1-800-4-HARRIS 10N120BND mosfet 10N120bnd TRANSISTOR 10N120BND IC IGBT 10N120BND 10n120bnd equivalent TA49290 diode TA49290 ta49302 SEM 238	PDF
BTS 3900 a Abstract: BTS 3900 12N60 BTS 3900 l 35N120U1 24n60 52N60A IXSH 35N120AU1 35n120u 35N120AU1 Text: Insulated Gate Bipolar Transistors IGBT The IGBT is a com bination of bipolar and MOS technologies. The best features of bipolar transistors are merged with the voltage-controlled properties of M OSFETs. A dvantages to the user: • rugged, short-circuit-proof device	OCR Scan	T-227B BTS 3900 a BTS 3900 12N60 BTS 3900 l 35N120U1 24n60 52N60A IXSH 35N120AU1 35n120u 35N120AU1	PDF
8n80 Abstract: DS117-12A 36-18N 16go 20N60A 2QN60 62-16N07 DSA117-12 10N60A MCC95-12io1B Text: Alphanumerical Index c CS 142-12 io8 CS 142-16 ¡08 CS 23-08 io2 CS 23-12 ¡02 CS 23-16 io2 3S 300-12 io3 2S 300-16 io3 CS 35-08 io4 CS 35-12 io4 CS 35-14 io4 CS 72-12 ¡08 CS 72-16 ¡08 CS 8-08 io2 CS 8-12 io2 CS 8-12 io2 CS1011 -18io1 CS1011-22io1 CS1011-25io1	OCR Scan	CS1011 -18io1 CS1011-22io1 CS1011-25io1 CS1250-12io1 CS1250-14io1 CS1250-16io1 CS20-12 CS20-14 CS20-16 8n80 DS117-12A 36-18N 16go 20N60A 2QN60 62-16N07 DSA117-12 10N60A MCC95-12io1B	PDF
40N60A Abstract: G 40N60 igbt IXSN35N120AU1 IXSH 35N120AU1 50N60AU1 25N120AU1 IXLH35N120A IXLK35N120AU1 IXLN35N120AU1 IXLN50N120A Text: Insulated Gate Bipolar Transistors IGBT "S" and "L" series with improved SCSOA capability Type Tjm = 150 C ► New ► IXSP 2N100 IXSH 30N60 IXSH 40N60 IXSH 25N100 IXSH 45N100 IXSH 45N120 IXSP 2N100A ► IXSH 10N60A IXSH 24N60A IXSH 30N6QA IXSH 40N60A IXSH 25N100A	OCR Scan	2N100 30N60 40N60 25N100 45N100 45N120 2N100A 10N60A 24N60A 30N6QA 40N60A G 40N60 igbt IXSN35N120AU1 IXSH 35N120AU1 50N60AU1 25N120AU1 IXLH35N120A IXLK35N120AU1 IXLN35N120AU1 IXLN50N120A	PDF
thyristor TAG 8506 Abstract: nais inverter vf 7f operation manual 922AA1Y-A4P optek A400 817 Sprague 513D sprague 926c Sprague 195P Rapa relay 12vdc triac tag 8948 Mascot 719 Text: TABLE OF CONTENTS Catalog Number 11Q New For 1989! • Over 7,900 New Products • 13 New M anufacturers PRODUCT INDICES tiamp*,'fminei forskSockets ' Solder Equipment endTtfob ] vriHp\< lint Equipment, Panel Meters, Aejulpmant, i A P R E M IE R C o m p an y	OCR Scan	11PM104 thyristor TAG 8506 nais inverter vf 7f operation manual 922AA1Y-A4P optek A400 817 Sprague 513D sprague 926c Sprague 195P Rapa relay 12vdc triac tag 8948 Mascot 719	PDF

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10N120BND

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thyristor TAG 8506