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    G10N Search Results

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    G10N Price and Stock

    Johanson Technology Inc LRW0402WG10NGG001T

    FIXED IND 10NH 480MA 195MOHM SMD
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    DigiKey LRW0402WG10NGG001T Cut Tape 44,650 1
    • 1 $0.27
    • 10 $0.217
    • 100 $0.1621
    • 1000 $0.11367
    • 10000 $0.10698
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    LRW0402WG10NGG001T Reel 30,000 10,000
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    Murata Manufacturing Co Ltd LQP03TG10NH02D

    FIXED IND 10NH 190MA 1.52OHM SMD
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    DigiKey LQP03TG10NH02D Digi-Reel 14,825 1
    • 1 $0.1
    • 10 $0.025
    • 100 $0.0195
    • 1000 $0.01517
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    LQP03TG10NH02D Cut Tape 14,825 1
    • 1 $0.1
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    Mouser Electronics LQP03TG10NH02D 43,232
    • 1 $0.1
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    TME LQP03TG10NH02D 15,000
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    Avnet Abacus LQP03TG10NH02D 17 Weeks 15,000
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    Chip1Stop LQP03TG10NH02D Cut Tape 13,900
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    • 100 $0.0126
    • 1000 $0.0065
    • 10000 $0.00568
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    onsemi HGTG10N120BND

    IGBT NPT 1200V 35A TO247-3
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    DigiKey HGTG10N120BND Tube 11,161 1
    • 1 $4.24
    • 10 $4.24
    • 100 $2.52233
    • 1000 $1.84312
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    Rochester Electronics HGTG10N120BND 46 1
    • 1 $2.26
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    • 1000 $1.92
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    Chip1Stop HGTG10N120BND 653
    • 1 $4.81
    • 10 $4.01
    • 100 $2.43
    • 1000 $2.16
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    Goford Semiconductor G10N10A

    N100V,RD(MAX)130MOHM@10V,TO-252
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    DigiKey G10N10A Cut Tape 4,774 1
    • 1 $0.66
    • 10 $0.44
    • 100 $0.66
    • 1000 $0.21539
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    G10N10A Digi-Reel 4,774 1
    • 1 $0.66
    • 10 $0.44
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    • 1000 $0.21539
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    G10N10A Reel 2,500 2,500
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    Goford Semiconductor G10N03S

    N30V,RD(MAX)<12M@10V,RD(MAX)<16M
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    DigiKey G10N03S Digi-Reel 3,500 1
    • 1 $0.49
    • 10 $0.332
    • 100 $0.49
    • 1000 $0.15926
    • 10000 $0.14535
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    G10N03S Cut Tape 3,500 1
    • 1 $0.49
    • 10 $0.332
    • 100 $0.49
    • 1000 $0.15926
    • 10000 $0.14535
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    Verical G10N03S 4,000 4,000
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    G10N Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    g10n60

    Abstract: No abstract text available
    Text: SGP02N60 SGD02N60 Fast IGBT in NPT-technology C • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for: - Motor controls - Inverter • NPT-Technology for 600V applications offers:


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    PDF SGP02N60 SGD02N60 PG-TO-252-3-1 PG-TO-220-3-1 O-252AA) O-220AB) SGD02N60 g10n60

    g10n60

    Abstract: SGB10N60A J-00M SGB10N60A equivalent
    Text: SGB10N60A Fast IGBT in NPT-technology C • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs G E • Designed for: - Motor controls - Inverter • NPT-Technology for 600V applications offers:


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    PDF SGB10N60A SGB10N60A g10n60 J-00M SGB10N60A equivalent

    G8Z-002

    Abstract: G10Z-002 G5Z-003 240v DC motor A1s 46 G8Z-003 DC MOTOR 6-24v
    Text: WILLOW Technologies Sensors Non-Insulated Tilt and Position Switches Tilt switches "make" when the electrode is tilted below horizontal and "break" when tilted above the horizontal. Total travel from "make" to "break" is the "Maximum included angle" shown below. The component


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    PDF A1S-017 20-480V 20-240V G8Z-002 G10Z-002 G5Z-003 240v DC motor A1s 46 G8Z-003 DC MOTOR 6-24v

    g10n50c1

    Abstract: G10N50E1 HGTP10N40E1 50E1 HGTH12N40C1 HGTH12N40E1 HGTH12N50C1 HGTH12N50E1 HGTP10N40C1 HGTP10N50C1
    Text: HGTP10N40C1, 40E1, 50C1, 50E1, HGTH12N40C1, 40E1, 50C1, 50E1 S E M I C O N D U C T O R 10A, 12A, 400V and 500V N-Channel IGBTs April 1995 Features Packages HGTH-TYPES JEDEC TO-218AC • 10A and 12A, 400V and 500V EMITTER • VCE ON : 2.5V Max. COLLECTOR • TFI: 1µs, 0.5µs


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    PDF HGTP10N40C1, HGTH12N40C1, O-218AC O-220AB HGTH12N40E1, HGTH12N50C1, HGTH12N50E1, HGTP10N40E1, g10n50c1 G10N50E1 HGTP10N40E1 50E1 HGTH12N40C1 HGTH12N40E1 HGTH12N50C1 HGTH12N50E1 HGTP10N40C1 HGTP10N50C1

    G10N60A

    Abstract: g10n60 SGW10N60A G10N60A DATASHEET SGP10N60A inverter 12 to 220 100w PG-TO-247-3-21 PG-TO-220-3-1 PG-TO-247-3 G10N
    Text: SGP10N60A SGW10N60A Fast IGBT in NPT-technology C • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs G E • Designed for: - Motor controls - Inverter PG-TO-247-3 • NPT-Technology for 600V applications offers:


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    PDF SGP10N60A SGW10N60A PG-TO-247-3 PG-TO-220-3-1 G10N60A PG-TO-220-ontain G10N60A g10n60 SGW10N60A G10N60A DATASHEET SGP10N60A inverter 12 to 220 100w PG-TO-247-3-21 PG-TO-220-3-1 PG-TO-247-3 G10N

    g10n60

    Abstract: No abstract text available
    Text: SGP02N60 SGD02N60 Fast IGBT in NPT-technology C • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for: - Motor controls - Inverter • NPT-Technology for 600V applications offers:


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    PDF SGP02N60 SGD02N60 PG-TO-252-3-1 PG-TO-220-3-1 O-252AA) O-220AB) SGD02N60 g10n60

    g10n60

    Abstract: SGP10N60A
    Text: SGP10N60A SGW10N60A Fast IGBT in NPT-technology C • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs G E • Designed for: - Motor controls - Inverter PG-TO-247-3-21 • NPT-Technology for 600V applications offers:


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    PDF SGP10N60A SGW10N60A PG-TO-247-3-21 SGW10N60A g10n60

    g10n60

    Abstract: Q67040-S4510
    Text: SGP10N60A SGW10N60A Fast IGBT in NPT-technology C • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs G • Designed for: - Motor controls - Inverter E PG-TO-247-3-1 TO-247AC


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    PDF SGP10N60A SGW10N60A SGW10N60A g10n60 Q67040-S4510

    10N120BN

    Abstract: G10N120 10N120 TA49290 G10N120BN N-channel MOSFET 800v to-247 G10N G10N120b N-channel MOSFET to-247 HGT1S10N120BNS
    Text: G10N120BN, HGTP10N120BN, HGT1S10N120BNS Data Sheet January 2000 35A, 1200V, NPT Series N-Channel IGBT Features The G10N120BN, HGTP10N120BN and HGT1S10N120BNS are Non-Punch Through NPT IGBT designs. They are new members of the MOS gated high voltage switching IGBT family. IGBTs combine the best


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    PDF HGTG10N120BN, HGTP10N120BN, HGT1S10N120BNS HGTP10N120BN HGT1S10N120BNS 10N120BN G10N120 10N120 TA49290 G10N120BN N-channel MOSFET 800v to-247 G10N G10N120b N-channel MOSFET to-247

    G10N60A

    Abstract: g10n60 G10N60A DATASHEET PG-TO-263-3-2 PG-TO263-3-2 SGB10N60A S025A
    Text: SGB10N60A Fast IGBT in NPT-technology C • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs G E • Designed for: - Motor controls - Inverter • NPT-Technology for 600V applications offers:


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    PDF SGB10N60A PG-TO-263-3-2 G10N60A G10N60A g10n60 G10N60A DATASHEET PG-TO-263-3-2 PG-TO263-3-2 SGB10N60A S025A

    150 g35 capacitor

    Abstract: 150 g25 capacitor G15CG0R3 Dielectric Laboratories G15CFR NS2R G10BG2R2
    Text: GAP CAPS dielectric laboratories Precision Series Capacitors for Microwave Applications Part Number G 15 BH 100 K 5 P X 10 Product Code Gap Width In Mils Case Size Test Code Material Code Termination Code Capacitance Code Voltage Rating WVDC Tolerance Code


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    PDF 030BG180 5PX20 G30BH200 G30BH220 G30BH270 G30BH300 150 g35 capacitor 150 g25 capacitor G15CG0R3 Dielectric Laboratories G15CFR NS2R G10BG2R2

    g10n60

    Abstract: No abstract text available
    Text: SGB10N60A Fast IGBT in NPT-technology C • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs G E • Designed for: - Motor controls - Inverter • NPT-Technology for 600V applications offers:


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    PDF SGB10N60A P-TO-263-3-2 O-263AB) G10N60 PG-TO-263-ntain g10n60

    G10N60A

    Abstract: g10n60 G10N60A DATASHEET SGW10N60A SGP10N60A IGBT 1500 igbt 1000v 10A PG-TO-220-3-1 PG-TO-247-3 PG-TO-247-3-21
    Text: SGP10N60A SGW10N60A Fast IGBT in NPT-technology C • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs G E • Designed for: - Motor controls - Inverter PG-TO-247-3 • NPT-Technology for 600V applications offers:


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    PDF SGP10N60A SGW10N60A PG-TO-247-3 PG-TO-220-3-1 G10N60A SGW10ontain G10N60A g10n60 G10N60A DATASHEET SGW10N60A SGP10N60A IGBT 1500 igbt 1000v 10A PG-TO-220-3-1 PG-TO-247-3 PG-TO-247-3-21

    65e9 transistor

    Abstract: transistor 75307D Transistor 65e8 SD MOSFET DRIVE DATASHEET 4468 8 PIN G40N60 RHR15120 equivalent 10n120bnd 76107d transistor 76121D emerson three phase dc motor driver service note
    Text: DUAL DIE POWER MOSFETs TM 1 1-888-INTERSIL or 321-724-7143 | | ID AMPS rDS ON VGE = 10V OHMS rDS(ON) VGE = 5V OHMS rDS(ON) VGE = 2.5V OHMS TYPE MS-012AA (SO-8) MO-153AA (TSSOP-8) 12 3.50 - 0.050 - Dual N RF1K49090 - 12 3.50 - 0.130 - Dual P RF1K49093 - 12


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    PDF 1-888-INTERSIL MS-012AA MO-153AA RF1K49090 RF1K49093 RF1K49092 ITF87056DQT ITF87072DK8T ITF87008DQT RF1K49223 65e9 transistor transistor 75307D Transistor 65e8 SD MOSFET DRIVE DATASHEET 4468 8 PIN G40N60 RHR15120 equivalent 10n120bnd 76107d transistor 76121D emerson three phase dc motor driver service note

    G10N60A

    Abstract: g10n60 SGW10N60A SGP10N60A
    Text: SGP10N60A SGW10N60A Fast IGBT in NPT-technology C • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs G E • Designed for: - Motor controls - Inverter PG-TO-247-3-21 • NPT-Technology for 600V applications offers:


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    PDF SGP10N60A SGW10N60A PG-TO-247-3-21 SGW10N60A G10N60A g10n60

    10N120BN

    Abstract: No abstract text available
    Text: G10N120BN, HGTP10N120BN, HGT1S10N120BNS Semiconductor Data Sheet January 1999 35A, 1200V, NPT Series N-Channel IGBT Features The G10N120BN, HGTP10N120BN and HGT1S10N120BNS are Non-Punch Through NPT IGBT designs. They are new members of the MOS gated high


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    PDF HGTG10N120BN, HGTP10N120BN, HGT1S10N120BNS HGTP10N120BN HGT1S10N120BNS O-263AB 10N120BN, 10N120BN

    Untitled

    Abstract: No abstract text available
    Text: 4 TH IS DRAWING COPYRIGHT IS U N P U B L IS H E D . 2 3 RELEASED BY 1WCO ELECTRONICS CORPORATION. FOR PUBLIC ATIO N LOC D IS T R E V IS IO N S ALL INTERNATIONAL RIGHTS RESERVED. P LTR D E S C R IP TIO N A PR ODUCTION DATE RE LE ASE 03 S EP DWN APVD BJR MKS


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    PDF

    10N120BN

    Abstract: G10N120BN ta49290 T0263AB
    Text: G10N120BN, HGTP10N120BN, HGT1S10N120BNS S em iconductor January 1999 Data Sheet 35A, 1200V, NPT Series N-Channel IGBT Features The G10N120BN, HGTP10N120BN and HGT1S10N120BNS are Non-Punch Through NPT IGBT designs. They are new members of the MOS gated high


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    PDF HGTG10N120BN, HGTP10N120BN, HGT1S10N120BNS HGTP10N120BN HGT1S10N120BNS O-263AB 10N120BN, 10N120BN G10N120BN ta49290 T0263AB

    Untitled

    Abstract: No abstract text available
    Text: O rd e r this data sheet by M R F10150H/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA MRF10150H’ Microwave Pulse Power Transistor 150 Watts Peak NPN 1025-1150 MHz CPT0 Designed for 1025-1150 MHz pulse common base amplifiers. • Guaranteed Performance at 1090 MHz


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    PDF F10150H/D MRF10150H' MRF10150HX MRF10150HXV MRF10150HS MRF10150HC 376B-02 1PHX31252-1 MRF10150H/D

    g10n50

    Abstract: EM- 534 motor
    Text: HARRIS S E M I C O N D U C T O R H G T D 1 0N 4 0 F1 , HGTD10N40F1S, H G T D 1 0N 5 0 F1 , HGTD 10N 50F1S 10A, 400V and 500V N- Channel I GBTs March 1997 Features Packages HGTD10N40F1, HGTD10NS0F1 JEDEC TO-251 AA • 1 0 A , 4 0 0 V and 500V • V CE ON 2 .5 V M a x .


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    PDF HGTD10N40F1S, 50F1S HGTD10N40F1, HGTD10NS0F1 O-251 0N40F1 0N50F1 HGTD10N50F1, g10n50 EM- 534 motor

    12N50E

    Abstract: 12N50E1 10N50E1 g10n50c1 10N50C1 A 933 S transistors 10N40E1 12N50C1 tp10n40c TP10N40
    Text: r r I i- i a c a m e ; <Ü h g t p i 0N40C1, 40E1, s o c i , 50E1, HGTH12N40C1, 40E1, 50C1, 50E1 o? 10A, 12A, 400V and 500V N-Channel IGBTs A p ril 1 9 9 5 Features Packages H G TH -TY P E S JE D E C TO -218A C • 10A and 12A, 400V and 500V • ^CE ON ’ 2.5V Max.


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    PDF 0N40C1, HGTH12N40C1, -218A -220A HGTH12N40E1, HGTH12N50C1, HGTH12N50E1, HGTP10N40C1, HGTP10N40E1, 12N50E 12N50E1 10N50E1 g10n50c1 10N50C1 A 933 S transistors 10N40E1 12N50C1 tp10n40c TP10N40

    CF892

    Abstract: 10DBAG5 TDA9725 CCD FILTER bandpass IR
    Text: Philips Semiconductors Product specification Y/C automatic adjustment processor VHS standard TDA9725 FEATURES GENERAL DESCRIPTION • Automatic adjustment by control loops The TDA9725 is an integrated circuit for chrominance and luminance processing (record and playback) in VHS tape


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    PDF TDA9725 TDA9725 7110A2h 01DTT7S CF892 10DBAG5 CCD FILTER bandpass IR

    tc 144e

    Abstract: 144EK
    Text: Part Marking □Marks are filled with hR ranks EM3 #h n Ranking Inc Ication C ode hFE R anking C ode h R R anking P a rt M a rkin g P a rt No. P ackage P art M arking 1C D P art No. 2SC4082 AD 2SC4818 ACD 2SC 4725 1D D 2SC4063 ADD 2SC 4726 1ED 2S C 4 0 S 4


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    PDF 2SC4082 2SC4818 2SC4063 2SC4617 2SD1664 2SD1768 2SD2098 2SC4672 2S02167 2SD2170 tc 144e 144EK

    DG10N

    Abstract: G10N
    Text: Ç l'= L G1V3S lO ld . dO I 133HS L0-¿t8C9-dSV 66-6Z-C N3M1IHID ‘AG 30VH •Z T S 31 Û N V 0 Z 0 0' T XXXX' S 00 ' T XXX' :3~LLLL 10' T X X ' S S O t'-O t-S -O lfl ;XM1 ¿ H I x o a O'd £ C Z 9 - t t6 319 ¡NO S 3 3 N V a T 1 0 1


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    PDF 133HS 66-6Z-C 3SIMa3H10 SNIV1N00 NOI133dia DG10N G10N